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JP2013214608A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013214608A
公开(公告)日：2013-10-17
申请号：JP2012083931
申请日：2012-04-02
申请人： Fuji Electric Co Ltd , 富士電機株式会社
发明人： NAKAMURA HIROSHI , MIYAZAWA SHIGEMI
IPC分类号： H01L27/04 , H01L21/329 , H01L21/822 , H01L21/8234 , H01L27/06 , H01L27/088 , H01L29/739 , H01L29/78 , H01L29/861 , H01L29/866 , H01L29/868
CPC分类号： H01L27/0647 , H01L29/0692 , H01L29/66106 , H01L29/7395 , H01L29/866
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a protective function at a low cost, which is unlikely to cause latch-up even in a configuration where a vertical Zener diode is connected between an emitter and a gate.SOLUTION: A semiconductor device used for an ignition device comprises: an output stage IGBT25 and a Zener diode (ZD) 12 which are provided on the same semiconductor substrate; an n emitter (E) region 4 in a surface layer of a first p well layer 2a; a gate (G) electrode 6 which covers the n emitter region 4 via a gate (G) insulation film 5; and an E electrode 8 on the E region 4. The ZD 12 includes on a surface layer of a second well layer 2b different from the first p well layer 2a: an anode (A) electrode 13 which forms ohmic contact with a surface of a player 1 having a concentration higher than that of the second p well layer 2b; and a cathode (K) electrode 14 which forms Schottky contact with a surface of an nlayer 3 having a concentration lower than that of the second p well layer 2b. The E electrode 8 and the A electrode 13 of the IGBT are connected.
摘要翻译：要解决的问题：提供一种具有低成本保护功能的半导体器件，其即使在垂直齐纳二极管连接在发射极和栅极之间的结构中也不可能引起闩锁。解决方案：半导体器件用于点火装置包括：设置在同一半导体衬底上的输出级IGBT25和齐纳二极管（ZD）12; 在第一p阱层2a的表面层中的n个发射极（E）区域4; 通过栅极（G）绝缘膜5覆盖n个发射极区域4的栅极（G）电极6; 以及E区域4上的E电极8.ZD12包括在与第一p阱层2a不同的第二阱层2b的表面层上：阳极（A）电极13，其形成与播放器1的浓度高于第二p阱层2b的浓度; 以及阴极（K）电极14，其与具有低于第二p阱层2b的浓度的n层3的表面形成肖特基接触。 IGBT的E电极8和A电极13连接。

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