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1. 发明专利

JP2010157749A Method of removing material from support 审中-公开
标题翻译：从支持中移除材料的方法
公开(公告)号：JP2010157749A
公开(公告)日：2010-07-15
申请号：JP2010020903
申请日：2010-02-02
申请人： Fsi Internatl Inc , エフエスアイインターナショナルインコーポレーテッド
发明人： CHRISTENSON KURT KARL , HANESTAD RONALD J , RUETHER PATRICIA ANN , WAGENER THOMAS J
IPC分类号： H01L21/304 , B05D1/02 , B08B3/02 , B08B3/08 , G03F7/42 , H01L21/027
CPC分类号： B05B1/00 , B08B3/08 , B08B7/00 , B08B2230/01 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/30604 , H01L21/31105 , H01L21/31133 , H01L21/6708
摘要： PROBLEM TO BE SOLVED: To provide a method of removing a material and optimally a photoresist from a support. SOLUTION: The spraying direction of liquid from three orifice nozzles is changed in the removing method. A nozzle is mounted with a first orifice nozzle 124 with a liquid supplied from a liquid source under a sufficient pressure to eject the stream of the liquid, a first gas orifice 130 with a gas supplied from a gas source under a controlled pressure to eject gas flow so as to at least partially deflect the stream of the liquid, and a second gas orifice 140 with the second gas supplied under the controlled pressure from a second gas source to eject the gas flow so as to at least partially deflect the stream of the liquid. The spraying direction of the liquid from the nozzle 122 is regulated by adjusting the gas flow at least in one of the first gas orifice 130 and the second gas orifice 140, so as to modify the gas flow from a central orifice 124. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供从载体上去除材料和最佳地光致抗蚀剂的方法。解决方案：在去除方法中改变来自三个喷嘴喷嘴的液体的喷射方向。喷嘴安装有第一孔口喷嘴124，其中从液体源供应的液体在足够的压力下喷射液体流，第一气体孔口130具有在受控压力下从气体源供应的气体以喷射气体流动以至少部分地偏转液体流;以及第二气体孔口140，其中第二气体在受控压力下从第二气体源供应以排出气体流，以至少部分地偏转流体的流液体。来自喷嘴122的液体的喷射方向通过至少在第一气体孔口130和第二气体孔口140中的一个中调节气体流量来调节，以便改变来自中心孔口124的气体流动。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2010147493A Method for removing material from substrate 有权
标题翻译：从基板去除材料的方法
公开(公告)号：JP2010147493A
公开(公告)日：2010-07-01
申请号：JP2010020904
申请日：2010-02-02
申请人： Fsi Internatl Inc , エフエスアイインターナショナルインコーポレーテッド
发明人： CHRISTENSON KURT KARL , HANESTAD RONALD J , RUETHER PATRICIA ANN , WAGENER THOMAS J
IPC分类号： H01L21/304 , H01L21/027
CPC分类号： B05B1/00 , B08B3/08 , B08B7/00 , B08B2230/01 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/30604 , H01L21/31105 , H01L21/31133 , H01L21/6708
摘要： PROBLEM TO BE SOLVED: To identify alternative techniques and compositions for treatment to remove organic materials, and especially photoresist materials, from substrates such as semiconductor wafers. SOLUTION: A method of removing materials, and preferably photoresist, from a substrate 18 includes dispensing a liquid sulfuric acid composition including sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of less than 5:1 onto a material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90°C, either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90°C, the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：确定用于从诸如半导体晶片的衬底去除有机材料，特别是光致抗蚀剂材料的替代技术和组合物。解决方案：从衬底18去除材料，优选光致抗蚀剂的方法包括分配包含硫酸和/或其干燥物质和前体并且具有小于5的水/硫酸摩尔比的液体硫酸组合物：1以有效基本上均匀涂覆涂覆材料的基材的量涂覆到涂覆有材料的基材上。优选在液体硫酸组合物分配之前，期间或之后将基材加热至至少约90℃的温度。在基材处于至少约90℃的温度之后，将液体硫酸组合物暴露于水蒸气中，其量可有效地将液体硫酸组合物的温度升高到高于液体硫酸组合物的温度之前，暴露于水蒸汽。然后优选冲洗基材以除去材料。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2012069994A Process for removing material from substrate 审中-公开
标题翻译：从基材去除材料的方法
公开(公告)号：JP2012069994A
公开(公告)日：2012-04-05
申请号：JP2011268220
申请日：2011-12-07
申请人： Fsi Internatl Inc , エフエスアイインターナショナルインコーポレーテッド
发明人： CHRISTENSON KURT KARL , HANESTAD RONALD J , RUETHER PATRICIA ANN , THOMAS J WAGNER
IPC分类号： H01L21/304 , H01L21/027
CPC分类号： B05B1/00 , B08B3/08 , B08B7/00 , B08B2230/01 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/30604 , H01L21/31105 , H01L21/31133 , H01L21/6708
摘要： PROBLEM TO BE SOLVED: To provide a method of removing materials, and preferably a photoresist, from a substrate (18).SOLUTION: The method comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of less than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90°C, either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90°C, the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.
摘要翻译：要解决的问题：提供从基板（18）去除材料，优选光致抗蚀剂的方法。解决方案：该方法包括将含有硫酸和/或其干燥物质和前体并且具有小于5:1的水/硫酸摩尔比的液体硫酸组合物以有效的量基本均匀地涂覆涂覆材料的基材。优选在液体硫酸组合物分配之前，期间或之后将基材加热至至少约90℃的温度。在基材处于至少约90℃的温度之后，将液体硫酸组合物暴露于水蒸气中，其量可有效地将液体硫酸组合物的温度升高到高于液体硫酸组合物的温度之前，暴露于水蒸汽。然后优选冲洗基材以除去材料。版权所有（C）2012，JPO＆INPIT

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