会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明专利
    • Method for removing material from substrate
    • 从基板去除材料的方法
    • JP2010147493A
    • 2010-07-01
    • JP2010020904
    • 2010-02-02
    • Fsi Internatl Incエフエスアイ インターナショナル インコーポレーテッド
    • CHRISTENSON KURT KARLHANESTAD RONALD JRUETHER PATRICIA ANNWAGENER THOMAS J
    • H01L21/304H01L21/027
    • B05B1/00B08B3/08B08B7/00B08B2230/01G03F7/423H01L21/02063H01L21/02071H01L21/30604H01L21/31105H01L21/31133H01L21/6708
    • PROBLEM TO BE SOLVED: To identify alternative techniques and compositions for treatment to remove organic materials, and especially photoresist materials, from substrates such as semiconductor wafers. SOLUTION: A method of removing materials, and preferably photoresist, from a substrate 18 includes dispensing a liquid sulfuric acid composition including sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of less than 5:1 onto a material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90°C, either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90°C, the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:确定用于从诸如半导体晶片的衬底去除有机材料,特别是光致抗蚀剂材料的替代技术和组合物。 解决方案:从衬底18去除材料,优选光致抗蚀剂的方法包括分配包含硫酸和/或其干燥物质和前体并且具有小于5的水/硫酸摩尔比的液体硫酸组合物 :1以有效基本上均匀涂覆涂覆材料的基材的量涂覆到涂覆有材料的基材上。 优选在液体硫酸组合物分配之前,期间或之后将基材加热至至少约90℃的温度。 在基材处于至少约90℃的温度之后,将液体硫酸组合物暴露于水蒸气中,其量可有效地将液体硫酸组合物的温度升高到高于液体硫酸组合物的温度之前, 暴露于水蒸汽。 然后优选冲洗基材以除去材料。 版权所有(C)2010,JPO&INPIT