会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明专利
    • JPH05333231A
    • 1993-12-17
    • JP13878992
    • 1992-05-29
    • FURUKAWA ELECTRIC CO LTD
    • YANAGAWA HISAHARUSHIMIZU TAKEONAKAMURA SHIROUEKI TAKESHI
    • G02B6/30G02B6/42
    • PURPOSE:To align and easily connect the optical fiber and optical waveguide to each other. CONSTITUTION:For the method for connecting the optical waveguide formed on a waveguide substrate B2 with optical fibers 9 and 9, and 9 and 9 arrayed on optical fiber array tools b1 and b3 by making end surfaces of the waveguide substrate B2 and end surfaces of the optical fiber array tools b1 and b2 on each other, markers 2 and 2 which extend coaxially in the direction of optical axes when the waveguide substrate B2 and optical fiber array tools b1 and b3 are made to abut on each other and pin guide grooves 6 and 6 cut based on the markers 2 and 2 are formed in the waveguide B2 and optical fiber array tools b1 and b3; and optical fiber guide grooves 7 and 7 cut bared on the markers 2 and 2 are formed in the optical fiber array tools b1 and b3 and when the waveguide substrate B2 and optical fiber array tools b1 and b3 are made to abut on each other, common guide pins 8 and 8 are put in the pin guide grooves 6 and 6 to align the optical waveguide with the optical fibers 9 and 9, and 9 and 9.
    • 10. 发明专利
    • OPTICAL SWITCH
    • JPH0233134A
    • 1990-02-02
    • JP18385388
    • 1988-07-22
    • FURUKAWA ELECTRIC CO LTD
    • UEKI TAKESHIKAMATA YOSHIYUKIYANAGAWA HISAHARU
    • G02F1/313H04B10/00H04B10/27
    • PURPOSE:To form a p-n junction between a core layer and a semiconductor layer as a continuous growth surface and to suppress a diffusion to the core layer side of n type impurities by forming a p type semiconductor layer positioned on the upper face of an n type semiconductor core layer by epitaxial growth. CONSTITUTION:On an n type semiconductor substrate 1 on which the lower electrode 11 has been formed, an n type semiconductor lower clad layer 13 and an n type semiconductor core layer 14 are laminated successively. On this core layer 14, a p type semiconductor thin layer 15 is formed, and also, the upper clad layer 16 and a p type semiconductor cap layer 17 whose refractive index is the same as that of the thin layer 15 are brought to continuous growth. Subsequently, by executing photolithography and a wet etching processing, a ridge corresponding to waveguides A-D is formed, and thereafter, an insulating thin film 18 is formed and covered thereon. In the end, a window 18a is pierced in a prescribed part of the insulating thin film 18, and by diffusing Zn from this window 18a by a vapor phase diffusing method, a p type impurity area 10 is formed in a part of the clad layer 16 and the cap layer 17, and the continuity of a p-n junction surface is secured.