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    • 6. 发明专利
    • Slider chamfering method of magnetic head
    • 磁头滑块切割方法
    • JPS6124076A
    • 1986-02-01
    • JP14366184
    • 1984-07-11
    • Fujitsu Ltd
    • TANI KAZUNORIINAZU ISOKICHITSUTSUMI SHOICHI
    • G11B21/21G11B5/60
    • PURPOSE: To hardly cause head crash by fitting a head arm finished product to a magnetic disc device and applying contact/start/stop operation of a magnetic head while applying external disturbance to a head arm.
      CONSTITUTION: The magnetic head 5 is fitted to the head arm 3 via a gimbal spring 4 to form the head arm finished body 16, which is fitted to an actuator 2 of the magnetic disc device and it is used as a device wrapping a slider face of the magnetic head 5. At the C.S.S., mechanical vibration exists in the wrapping device and this vibration is received by the head arm 3 and then the magnetic head 5 causes rolling and pitching, an external disturbance larger than the mechanical vibration is applied positively to cause rolling and pitching of the magnetic head 5, and the end of a floating face 11 of the slider 8 and a corner (b) of the core are wrapped by a disc 1. Thus, the slider chamfering for the magnetic head hardly causing head crash is attained.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:通过将头臂成品装配到磁盘装置上,并且在对头臂施加外部干扰时施加磁头的接触/起动/停止操作,几乎不会引起头部碰撞。 构成:磁头5经由万向弹簧4装配到头臂3,以形成安装到磁盘装置的致动器2的头臂完成体16,并且其被用作包裹滑块面的装置 在CSS中,包裹装置存在机械振动,头臂3受到振动,磁头5产生滚动和俯仰,大于机械振动的外部干扰正向施加于 导致磁头5的滚动和俯仰,并且滑块8的浮动面11的端部和芯的角部(b)被盘1包裹。因此,用于磁头的滑块倒角几乎不引起头部 崩溃了
    • 7. 发明专利
    • FORMATION OF THIN FILM DEVICE
    • JPH02192617A
    • 1990-07-30
    • JP1242989
    • 1989-01-20
    • FUJITSU LTD
    • AMEMORI KAZUHIKOTAKAHASHI YOSHIOTSUTSUMI SHOICHI
    • G11B5/31H01B13/00H01L21/302H01L21/3065
    • PURPOSE:To increase insulation resistance in each thin film device by performing ion mealing or sputter etching, and then, by performing dry etching or plasma etching using a specified gas according to a conductive material that is used for the formation of a conductive film or to an insulating material that is used for the formation of an insulating substrate film. CONSTITUTION:After a conductive film 2 is formed on an insulating substrate film 3 by a thin film process technique, masking done on a part of the conductive film 2 as required by a resist 1, unnecessary part of the conductive film 2 is removed by ion mealing or sputter etching, and then, according to a conductive material that is used for the formation of the conductive film 2 or to an insulating material that is used for the formation of the insulating substrate film 3, dry ethcing or plasma etching is performed using a specified gas. A residual part of the unnecessary metal, or a metallic particle abrashed by an argon particle that re-adheres to the insulating substrate film 3 during ion mealing or sputter etching, is reduced to a gas compound so as to be removed by exhaust. Unnecessary metal can thus be completely removed from the insulating substrate film 3, and insulation resistance in each thin film device can be increased.
    • 8. 发明专利
    • MANUFACTURE OF THIN FILM MAGNETIC HEAD
    • JPS6472309A
    • 1989-03-17
    • JP22850687
    • 1987-09-14
    • FUJITSU LTD
    • TSUTSUMI SHOICHITAKAHASHI YOSHIONAKAMURA KAZUOOZASA IKUO
    • G11B5/31
    • PURPOSE:To prevent the pattern transfer accuracy from being deteriorated due to a swell-up of resist coating by performing an exposure for eliminating a resist swell-up part before an exposure transfer process of a thin film pattern. CONSTITUTION:When a resist 2 is brought to coating on a substrate 1, a swell-up part 2a is formed on the resist 2, in the peripheral edge part of the substrate. Subsequently, by exposing the resist 2 by using a mask 3 having a mask pattern 4 for eliminating this swell-up part 2a and executing a development, the swell-up part is eliminated from the resist 2 on the wafer 1. Next, by executing an exposure by using a mask 5 having a pattern 6 to be formed on the resist 2, and executing a development, a desired pattern 2b is formed on the resist. In such a way, since an exposure process for eliminating the resist swell-up part is contained, the surface of the resist 2 becomes a uniform flat surface and the mask pattern 6 adheres closely to the surface of the resist 2. In such a way, deterioration of the pattern transfer accuracy based on the swell-up of the resist can be prevented.