专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH04309228A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04309228A
公开(公告)日：1992-10-30
申请号：JP7341891
申请日：1991-04-08
申请人： FUJITSU LTD
发明人： NAGASHIMA TAKASHI , SHIN DAISHIYOKU
IPC分类号： H01L21/30 , H01L21/027 , H01L21/3205
摘要： PURPOSE:To ensure wiring quality by a method wherein, after contact holes are formed in an insulating film on a first conductor layer by using resist as a mask, and the resist is eliminated under specified conditions, a second conductor layer is led out onto the insulating film exposed from the contact holes. CONSTITUTION:A resist film 6 is formed on a PSG interlayer insulating film 5 on a substrate and used as a mask, and RIE process is performed, thereby forming contact holes 8A, 8B which expose the upper surface of lower Al layers 2A, 2B. By using an RIE type ashing equipment, the resist film 6 is eliminated with oxygen plasma formed in a low pressure oxygen atmosphere lower than or equal to 0.2Torr by using high frequency electric power. Upper layer wirings 9A, 9B led out from the upper surfaces of the lower Al wirings 2A, 2B exposed in the contact holes 8A, 8B are formed on the PSG interlayer insulating film 5. Thereby the quality of the wirings 2A, 2B, 9A, 9B can be ensured.

2. 发明专利

JPH0964031A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0964031A
公开(公告)日：1997-03-07
申请号：JP21747695
申请日：1995-08-25
申请人： FUJITSU LTD , FUJITSU VLSI LTD
发明人： KARAKAWA KATSUYUKI , NAGASHIMA TAKASHI , OOHIRA SEIICHIROU
IPC分类号： C23C16/02 , H01L21/205 , H01L21/31 , H01L21/316 , H01L21/3205 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To stably deposit an excellent O3 -TEOS-NSG film on an uneven insulating film surface by conformally depositing an insulating film on a semiconductor substrate having an uneven pattern on the surface, alleviating the charging amount of the surface, and then forming a silicon oxide film. SOLUTION: An insulating film 3 is conformally deposited on a semiconductor substrate 1 having an uneven pattern on the surface. Then, the charged amount of the surface of the film 3 is alleviated, gas containing at least ozone and tetraethoxysilane is supplied onto the surface of the film 3 that the charged amount is alleviated, and a silicon oxide film 4 is formed by a chemical vapor growing method. For example, the film 3 is so formed by a plasma CVD as to cover the substrate 1 and interconnection 2. Then, high-pressure pure water is sprayed while the substrate 1 is being rotated at a high speed to surface clean it, then the charged amount of the surface of the film 3 is alleviated, and then an O3 -TEOS-NSG film 4 is formed by a normal pressure CVD.

3. 发明专利

JPH05175194A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05175194A
公开(公告)日：1993-07-13
申请号：JP33886591
申请日：1991-12-20
申请人： FUJITSU LTD
发明人： NAGASHIMA TAKASHI , HARADA HIDEKI
IPC分类号： H01L21/3205
摘要： PURPOSE:To form a projection preventive film having easy surface flattening and hard to produce overhang by forming a spin-on glass film containing a ceramic filler so as to cover the wiring layers formed on a base insulating film. CONSTITUTION:The wiring layer 2 patterns are formed on an insulating film 1 so as to expose the insulating film 1 between the the wiring layers 2. Next, spin-on glass containing a ceramic filler is applied so as to cover the wiring layers 2 in order to form a spin-on glass film 3 by performing thermocuring. At this time, since the spin-on glass film 3 has a difference in level between the wiring layers 2, further spin-on glass is applied to form the spin-on glass film 4 having the film thickness about for forming surface flattening in order to perform thermocuring. A projection preventive film in this case is hard to take an overhang shape so as to facilitate to perform surface flattening of an SOG film for surface flattening of the upper layer.

4. 发明专利

JPH04352456A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04352456A
公开(公告)日：1992-12-07
申请号：JP12764891
申请日：1991-05-30
申请人： FUJITSU LTD
发明人： NAGASHIMA TAKASHI , HARADA HIDEKI
IPC分类号： C01B33/12 , C01B33/157 , C03B8/04 , C03B19/12 , C03B19/14 , C03B20/00 , H01L21/316 , H01L21/768
摘要： PURPOSE:To scarcely disconnect a second layer Al interconnection by forming an interlayer film which can improve close adhesive properties with an insulating inorganic base film without loss of flatting and plasma resistance. CONSTITUTION:A step of forming a conductive film pattern on an insulating base film 1, a step of forming an insulating inorganic film 4 to cover it, a step of forming a siloxane silica glass film 5 thereon, and a step of forming a silica glass film 6 formed of organosilica sol on the film 5, are provided. Further, a step of forming a contact hole 7 for exposing a first conductive patter 2 by etching the film 6 formed of the organosilica sol series, the films 5, 4, and then a step of forming a second conductive film patter to bring into contact with the pattern 2 in the hole 7, are provided.

5. 发明专利

JPH08139187A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08139187A
公开(公告)日：1996-05-31
申请号：JP27328294
申请日：1994-11-08
申请人： FUJITSU LTD
发明人： NAGASHIMA TAKASHI , HARADA HIDEKI
IPC分类号： H01L21/3205 , H01L21/316 , H01L21/768
摘要： PURPOSE: To prevent the generation of a crack without altering baking conditions in the case of using a thick film inorganic SOG to flatten between wiring layers. CONSTITUTION: After a wiring layer 3 is provided on a substrate 1 via a base insulating film 2, a CVD film 4 is deposited on the exposed surfaces of the layer 3 and the film 2, then the surface of the CVD film is formed hydrophobic, then the CVD film 4 is coated with Si compound for forming SOG in which the film stress after baking becomes +2×10 dynes/cm or more, and baked in an oxidative atmosphere to be converted to a thick inorganic SOG film 6.

6. 发明专利

JPH06314686A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH06314686A
公开(公告)日：1994-11-08
申请号：JP10168293
申请日：1993-04-28
申请人： FUJITSU LTD , KYUSHU FUJITSU ELECTRONIC
发明人： NAGASHIMA TAKASHI , HARADA HIDEKI
IPC分类号： H01L21/314 , H01L21/318
摘要： PURPOSE:To obtain a cover film whose coverage with reference to substratum can be made good without obstructing high integration and whose film quality can be made dense by forming the cover film composed of a silicon nitride film or of a silicon oxynitride film which has been formed by a coating method and which has been generated from inorganic silazane. CONSTITUTION:A semiconductor device is manufactured in such a way that a cover film 13 which has been composed of an inorganic silicon nitride film or an inorganic siliocn oxynitride film fomed by a coating method is provided. Alternatively, it is manufactured so as to include a process in which, after inorgarnic silazane has been coated, it is fired and a silicon nitride film or a silicon oxynitride film 13 is formed. For example, lnorgg silazane in which 50% or higher of the end group of an oligomer or a polymer at a molecualr weight of 500 or higher is sealed with H is coated by a spin coating method so as to cover an Al-contained interconnection layer 12. Then, it is fired in a plasma atmosphere inside a vacuum chamber, and an inorganic silicon nitride film or an inorganic silicon oxynitride film 13 in a film thickness of 3000Angstrom is formed.

7. 发明专利

JPH0697298A FORMING METHOD OF SEMICONDUCTOR DEVICE INSULATING FILM 失效
公开(公告)号：JPH0697298A
公开(公告)日：1994-04-08
申请号：JP24501492
申请日：1992-09-14
申请人： FUJITSU LTD , KYUSHU FUJITSU ELECTRONIC
发明人： NAGASHIMA TAKASHI , HARADA HIDEKI
IPC分类号： H01L21/316 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L21/90
摘要： PURPOSE:To provide a method of forming an interlayer insulating film used for insulating an upper wiring from a lower wiring of a semiconductor and flattening the surface, where a flattening coating material (SOG film) is lessened in base pattern dependency and set uniform in thickness on a wiring. CONSTITUTION:An insulating film is formed to cover an insulating layer 2 on a semiconductor substrate and wirings 3 and 4 formed on the insulating layer through such a method that ceramic filler whose grain diameter is half to 1.5 times as large as the thickness of the wirings is mixed into SOG film source solution 5, and the mixed solution concerned is applied for the formation of an insulating film. The mixed solution is applied by a spin coater or a roll coater, and ceramic filler is restrained from being located on the wirings 3 and 4.

8. 发明专利

JPH03268452A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03268452A
公开(公告)日：1991-11-29
申请号：JP6890090
申请日：1990-03-19
申请人： FUJITSU LTD
发明人： NAGASHIMA TAKASHI , SHIN DAISHIYOKU
IPC分类号： H01L21/768 , H01L21/31 , H01L21/312 , H01L23/522
摘要： PURPOSE:To simply and easily prevent contact failure among multilayer wiring by firing an organic SOG film at a temperature where an organic group included in the organic SOG film 4 is decomposed. CONSTITUTION:An organic SOG film 4 is used as a layer insulating film of a multilayer wiring and is fired at a temperature where an organic group included in the SOG film 4 is decomposed. Hereby, a bond between silicon (Si) and the organic group (CH3) included in the organic SOG film 4 is destroyed and the Si is bonded to an OH group. Hereby, carbon monoxide (CO) or carbon dioxide (CO2) is produced and discharged. The destroyment of the bonding of the organic group (CH3) can be checked by an infrared absorption analysis. Hereby, any contact failure among multilayer wiring can simply and easily be prevented.

9. 发明专利

JPH08316186A FABRICATION METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08316186A
公开(公告)日：1996-11-29
申请号：JP12270795
申请日：1995-05-22
申请人： FUJITSU LTD
发明人： OKURA YOSHIYUKI , NAGASHIMA TAKASHI
IPC分类号： H01L21/304
摘要： PURPOSE: To provide a fabrication method of a semiconductor device that facilitates soluvent washing of an additional resin material on a substrate and a resin material adhering to a spin coating apparatus upon fabricating the semiconductor device through a process of forming an inorganic interlayer insulation film using the resin material having molecular side chains and an Si-H structure an its end. CONSTITUTION: An extra resin material existent on an edge of a substrate 1 on which the resin material is coated, a resin material adhering to the back of the substrate, or a resin material scattered in a coating apparatus 2 is washed and removed using a substituted aromatic compound or non-aqueous ketone as a washing solvent.

10. 发明专利

JPH088248A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH088248A
公开(公告)日：1996-01-12
申请号：JP13438294
申请日：1994-06-16
申请人： FUJITSU LTD
发明人： NAGASHIMA TAKASHI
IPC分类号： H01L23/52 , H01L21/316 , H01L21/3205 , H01L21/768
摘要： PURPOSE:To improve the reliability in wiring by suppressing the erosion of a lower-layer wiring without reducing the film quality when baking a thick-film inorganic SOG film. CONSTITUTION:A process for forming wirings 2 (2A and 2B) where at least a surface-layer part consists of refractory metal or its alloy are formed on a semiconductor substrate 1 and a process for applying inorganic spin-on-glass (SOG) film 4, where a molecular end is sealed with proton and silazane boning exists in a skeleton by covering wiring, to the semiconductor substrate 1 and for baking the inorganic SOG film 4 are provided. Refractory metal is tungsten or titan and its alloy is titanium nitride.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式