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1. 发明专利

JP2004006426A METHOD OF MANUFACTURE GAS DISCHARGE DISPLAY DEVICE 审中-公开
公开(公告)号：JP2004006426A
公开(公告)日：2004-01-08
申请号：JP2003320074
申请日：2003-09-11
申请人： FUJITSU LTD
发明人： HARADA HIDEKI
IPC分类号： H01J9/02 , H01J11/12 , H01J11/14 , H01J11/22 , H01J11/24 , H01J11/26 , H01J11/34 , H01J11/38 , H01J11/44 , H01J11/00 , H01J11/02
摘要： PROBLEM TO BE SOLVED: To manufacture a gas discharge display device having a homogeneous dielectric layer of which the dielectric constant is small. SOLUTION: In a method of manufacturing a gas discharge display device having a dielectric layer 17 spreading in the whole range of a display area, while covering electrodes X and Y arranged on a glass substrate 11, a layer, which is made of a silicon compound and which covers the underlayer surface of a deposited film by a plasma vapour phase epitaxy method and which also has compression stress, is formed in the surface of a substrate structure after a step for finishing the arrangement of the electrodes X and Y. COPYRIGHT: (C)2004,JPO

2. 发明专利

JPH0959387A SUBSTRATE-FLATTENING MATERIAL AND FLATTENING OF SUBSTRATE USING THE SAME 失效
公开(公告)号：JPH0959387A
公开(公告)日：1997-03-04
申请号：JP20970995
申请日：1995-08-17
申请人： FUJITSU LTD
发明人： NAKADA YOSHIHIRO , FUKUYAMA SHUNICHI , KOBAYASHI TOMOKO , YAMAGUCHI JO , HARADA HIDEKI , OKURA YOSHIYUKI
IPC分类号： C08G77/52 , C08G77/48 , C08L83/14 , H01L21/3205 , H01L21/48 , H01L21/768 , H01L23/498 , H05K1/00 , H05K3/46
摘要： PROBLEM TO BE SOLVED: To obtain a substrate flatening material useful for a wiring substrate and a semiconductor element, etc., having level difference or unevenness, comprising a linear siloxane-based polymer containing a silphenylene bonding in a molecule skeleton. SOLUTION: This material is a polymer of formula I having 500-50,000 weight-average molecular weight (R -R are each a 1-3C alkyl or a 2C or a 3C alkylene; (n) is a positive integer) or a polymer of formula II having 500-50,000 weight-average molecular weight (R and R are each a 1-3C alkyl or a 2C or a 3C alkylene; (m) and (n) are each a positive integer and a ratio of (m) to (n) is (m/m)

3. 发明专利

JPH0766188A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0766188A
公开(公告)日：1995-03-10
申请号：JP21169993
申请日：1993-08-26
申请人： CATALYSTS & CHEM IND CO , FUJITSU LTD
发明人： NAKAJIMA AKIRA , KOMATSU MICHIO , SHIN DAITEI , HARADA HIDEKI
IPC分类号： C09D183/00 , H01L21/312 , H01L21/768 , H01L23/522
摘要： PURPOSE:To provide a semiconductor device having a silica based insulation film excellent in insulation, mechanical strength, chemical resistance, etc., in which crack is prevented by setting low dielectric constant, low etching, and low shrinkage ratio at the time of film deposition. CONSTITUTION:The semiconductor device has a silica based insulation film formed of a coating liquid having ion concentration of 1.0 millimol/l or less and containing a reaction product of a silica sol (A) obtained through hydrolytic polycondensation of alkoxy silane shown by a general formula RnS(OR')4-n (R, R' represent 1-8C alkyl group, aryl group, or vinyl group, and n is an integer of 0-3) and an alkoxy silane or partial hydrolyzate thereof.

4. 发明专利

JPH05299517A 失效
公开(公告)号：JPH05299517A
公开(公告)日：1993-11-12
申请号：JP9789992
申请日：1992-04-17
申请人： FUJITSU LTD , KYUSHU FUJITSU ELECTRONIC
发明人： MIYAJIMA MOTOMORI , HARADA HIDEKI
IPC分类号： H01L21/316 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L21/90
摘要： PURPOSE:To make substrate surface into uniform flatness without generation of electric interference between the wiring layers where stray capacitance is increased even when the intervals between wiring layers are irregular in the semiconductor manufacturing method containing a substrate surface flattening process. CONSTITUTION:An aperture is formed on the interlayer insulating film located on the lower wiring layers 24a and 24b on a substrate 21, and an upper wiring layer, which is connected to the lower wiring layers 24a and 24b through the above-mentioned aperture, is formed in the title semiconductor device manufacturing method. This manufacturing method is composed of the following processes: a process in which a first SOG film 27 is formed by filling up the recessed part between the lower wiring layers 24a and 24b and protruding photosensitive coating films 26a to 25e, a process in which the protruding first SOG film is left on the insulating film in the recessed part between the lower wiring layers 24a and 24b by removing the protruding photosensitive coating films 26a to 26e and auxiliary members 28a to 28d are formed, and a process in which a heat treatment is conducted after a second SOG film 29 has been formed by filling up the remaining recessed part by the formation of auxiliary members 28a to 28d.

5. 发明专利

JPH05175194A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH05175194A
公开(公告)日：1993-07-13
申请号：JP33886591
申请日：1991-12-20
申请人： FUJITSU LTD
发明人： NAGASHIMA TAKASHI , HARADA HIDEKI
IPC分类号： H01L21/3205
摘要： PURPOSE:To form a projection preventive film having easy surface flattening and hard to produce overhang by forming a spin-on glass film containing a ceramic filler so as to cover the wiring layers formed on a base insulating film. CONSTITUTION:The wiring layer 2 patterns are formed on an insulating film 1 so as to expose the insulating film 1 between the the wiring layers 2. Next, spin-on glass containing a ceramic filler is applied so as to cover the wiring layers 2 in order to form a spin-on glass film 3 by performing thermocuring. At this time, since the spin-on glass film 3 has a difference in level between the wiring layers 2, further spin-on glass is applied to form the spin-on glass film 4 having the film thickness about for forming surface flattening in order to perform thermocuring. A projection preventive film in this case is hard to take an overhang shape so as to facilitate to perform surface flattening of an SOG film for surface flattening of the upper layer.

6. 发明专利

JPH04352456A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04352456A
公开(公告)日：1992-12-07
申请号：JP12764891
申请日：1991-05-30
申请人： FUJITSU LTD
发明人： NAGASHIMA TAKASHI , HARADA HIDEKI
IPC分类号： C01B33/12 , C01B33/157 , C03B8/04 , C03B19/12 , C03B19/14 , C03B20/00 , H01L21/316 , H01L21/768
摘要： PURPOSE:To scarcely disconnect a second layer Al interconnection by forming an interlayer film which can improve close adhesive properties with an insulating inorganic base film without loss of flatting and plasma resistance. CONSTITUTION:A step of forming a conductive film pattern on an insulating base film 1, a step of forming an insulating inorganic film 4 to cover it, a step of forming a siloxane silica glass film 5 thereon, and a step of forming a silica glass film 6 formed of organosilica sol on the film 5, are provided. Further, a step of forming a contact hole 7 for exposing a first conductive patter 2 by etching the film 6 formed of the organosilica sol series, the films 5, 4, and then a step of forming a second conductive film patter to bring into contact with the pattern 2 in the hole 7, are provided.

7. 发明专利

JPH04320337A COATING SOLUTION FOR INSULATION FILM FORMATION 失效
公开(公告)号：JPH04320337A
公开(公告)日：1992-11-11
申请号：JP8881891
申请日：1991-04-19
申请人： FUJITSU LTD , KYUSHU FUJITSU ELECTRONIC
发明人： HARADA HIDEKI
IPC分类号： H01L21/316
摘要： PURPOSE:To enhance the quality of an insulation film with regards to a coating solution for the formation of the insulation film. CONSTITUTION:A polysiloxane group polymer is hydrolyzed and turned into silanol. In a process where a solvent is added to a solution which contains this silanol so as to produce a coating solution, polyatomic alcohol having a methoxy group is used as a solvent. The water content is specified to exceed 5% of the total solvent 5, thereby constituting a coating solution for insulation film formation.

8. 发明专利

JPH04242936A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04242936A
公开(公告)日：1992-08-31
申请号：JP30491
申请日：1991-01-08
申请人： FUJITSU LTD
发明人： SUGANUMA MIYUKI , HARADA HIDEKI
IPC分类号： H01L21/306 , H01L21/312 , H01L21/3205
摘要： PURPOSE:To provide a manufacture of semiconductor devices which can easily flatten an insulating film between conductive film patterns and form openings of almost the same aspect ratio in their formation in the insulating film on the respective conductive film patterns. CONSTITUTION:This manufacture includes the steps of: forming conductive film patterns 3a, 3b on a base film 2; forming a photosensitive polyimide film 6 or a photosensitive silicone resin film; burying the photosensitive polyimide film 6 or the photosensitive silicone resin film between the conductive film patterns 3a, 3b by exposure, development, and curing of these films; forming an insulating film 7; and forming openings 9 which expose the conductive film patterns 3a, 3b in the insulating film 7 on the conductive film patterns 3a, 3b.

9. 发明专利

JPH03124048A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03124048A
公开(公告)日：1991-05-27
申请号：JP26246789
申请日：1989-10-06
申请人： FUJITSU LTD , KYUSHU FUJITSU ELECTRONIC
发明人： HARADA HIDEKI
IPC分类号： H01L21/768 , H01L21/316
摘要： PURPOSE:To reduce an adsorption of moisture, to reduce a degassing operation and to stabilize a contact characteristic of an Al electrode by a method wherein an exposed face of a spin-on-glass film inside a through hole is coupled with silylating agent so as to be water-repellent. CONSTITUTION:An Al electrode 5 is formed on an Si substrate 4; the substrate 4 is spin-coated with a spin-on-glass SOG film 6 to form a baked glass film. Then, a phosphosilicate glass PSG film 7 is laminated; a through hole 8 is formed on the electrode 5; after that, a heat treatment is executed. Since a hydroxyl group 9 exists on the surface of the exposed film 6 and the surface is in a state to easily adsorb moisture, a coupling treatment is executed by using a silylating agent. As a result, the hydroxyl group 9 is cross-linked with the silylating agent and is transformed into a silyl group 10; the surface of the film 6 becomes water-repellent. Then, the surface is covered with Al to fill the hole 8, and an upper-layer Al interconnection 11 is formed. Thereby, it is possible to restrain SOG from being degaussed and to stabilize a contact characteristic of the electrode.

10. 发明专利

JP2000021304A MANUFACTURE OF GAS DISCHARGE DISPLAY DEVICE 失效
公开(公告)号：JP2000021304A
公开(公告)日：2000-01-21
申请号：JP19127398
申请日：1998-07-07
申请人： FUJITSU LTD
发明人： HARADA HIDEKI
IPC分类号： G02F1/1333 , G09F9/313 , H01J9/02 , H01J9/24 , H01J11/12 , H01J11/22 , H01J11/24 , H01J11/26 , H01J11/34 , H01J11/36 , H01J11/38 , H01J11/40 , H01J11/42 , H01J11/50 , H01J11/02
摘要： PROBLEM TO BE SOLVED: To enable the manufacture of a gas discharge display device having a uniform dielectric layer small in dielectric constant. SOLUTION: In manufacture of a gas-discharge display device 1 having a dielectric layer 17 that covers electrodes X and Y arranged on a board 11 and spreads throughout a display area, after arrangement of the electrodes X and Y, a layer as the dielectric layer 17 is formed on the surface of a board structure. The layer 17 isotropically covers over the ground of a formed film by the plasma vapor phase epitaxy method.

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