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    • 10. 发明专利
    • APPARATUS FOR PRODUCING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
    • JPH02229790A
    • 1990-09-12
    • JP5156289
    • 1989-03-03
    • FURUKAWA ELECTRIC CO LTD
    • OZAWA SHOICHIKIJIMA TAKASHIKIKUTA TOSHIO
    • C30B27/02H01L21/208
    • PURPOSE:To facilitate the dissociation of a single crystal from a crucible and a liquid sealant with a device for executing a TKM method using the liquid sealant by providing a means for removing the liquid sealant from the crucible after the solidification of a raw material melt. CONSTITUTION:Polycrystalline raw materials of polycrystal GaAs and B2O3 (liquid sealant) are put into the crucible 14 and a seed crystal 1 is attached to a pulling-up shaft 4. The inside of a high-pressure vessel 13 is evacuated to a vacuum. Ar which is an inert gas is introduced and the pressure and temp. thereof are increased to melt the raw materials. The seed crystal 1 is then brought into contact with the raw material melt 2 and the temp of heaters 5, 6 is controlled to execute seeding. While the temp. in a melt zone and a low-temp. zone is controlled to 1250 deg.C to 900 deg.C, the seed crystal 1 and the crucible 14 are moved upward and the melt 2 is fully solidified to the single crystal. The crucible 14 is moved toward a liquid sealant container 9 which is made of quartz and is provided above the heater 5. The container 9 is heated to the temp. higher than the temp. around the crucible 14 by a heater 10. The pressure in the container 9 drops and the sealant 3 is sucked into the container 9 when the nozzle at the front end of the container 9 is brought into contact with the sealant 3 and the temp. of the heater 10 is lowered.