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1. 发明专利

JP2002281629A ARMORED SUBMARINE CABLE, METHOD OF REPAIRING ARMORED SUBMARINE CABLE, AND METHOD OF MANUFACTURING ARMOR MEMBER FOR REPAIR AND PROTECTION OF THE ARMORED SUBMARINE CABLE 失效
公开(公告)号：JP2002281629A
公开(公告)日：2002-09-27
申请号：JP2001079681
申请日：2001-03-21
申请人： OKINAWA ELECTRIC POWER CO LTD , KONAN KENSETSU KK , FURUKAWA ELECTRIC CO LTD
发明人： NAGAYAMA KIYOSHI , NUHA YUKIO , TSUNAMI YASUMITSU , KIJIMA TAKASHI , KAIZU YUTAKA
IPC分类号： H01B7/14 , H02G1/06 , H02G1/10 , H02G9/02
摘要： PROBLEM TO BE SOLVED: To provide an armored submarine cable, where the damaged section of the armor body can be repaired at a lower cost, as compared with before. SOLUTION: The armored submarine cable 1 has a constitution such that many pieces of armor line materials 5 as zinc-plated wires, where corrosionproof plating is applied are wound densely at specified winding pitches in spiral form around a cable body 4 so as to make an armor 2, and that it is covered with a corrosion-proof layer 6 as coal tar. This armored submarine cable 1 is laid at the bottom of the sea, and in case where a damaged part occurs in the armor 2, being moved by waves or an ocean current, an armor member 8 is wound at smaller winding pitches than the winding pitches of the armor 2 around the section including the damaged part 7 of the armor 2 of this armored submarine cable 1, whereby a protective armor 9 is made around the section of the armor 2 in the section including the damaged part 7 so as to repair it.

2. 发明专利

JP2002100245A DOUBLY ARMORED SUBMARINE CABLE 失效
公开(公告)号：JP2002100245A
公开(公告)日：2002-04-05
申请号：JP2000291871
申请日：2000-09-26
申请人： OKINAWA ELECTRIC POWER CO LTD , FURUKAWA ELECTRIC CO LTD
发明人： NAGAYAMA KIYOSHI , NUHA YUKIO , KIJIMA TAKASHI
IPC分类号： H01B7/14 , H01B7/17
摘要： PROBLEM TO BE SOLVED: To provide a doubly armored submarine cable which can prevent generation of kinks, even if a structure is employed where an inner armor body is formed with FRP wires and an outer armor body is formed with iron wires. SOLUTION: The outer periphery of a cable body 2 is doubly shielded with an inner armor body 3 and an outer armor body 4. The inner armor body 3 is formed with FRP wires 16, and the outer armor body 4 is formed with iron wires 19. The inner armor body 3 formed of the FRP wires 16 and the cable body 2 are twisted in the same direction. The outer armor body 4 formed with the iron wires 19 is twisted in the opposite direction to the winding direction of the inner armor body 3 and the cable body 2.

3. 发明专利

JP2002100246A DOUBLY ARMORED SUBMARINE CABLE AND ITS LAYING METHOD 失效
公开(公告)号：JP2002100246A
公开(公告)日：2002-04-05
申请号：JP2000291872
申请日：2000-09-26
申请人： OKINAWA ELECTRIC POWER CO LTD , FURUKAWA ELECTRIC CO LTD
发明人： NAGAYAMA KIYOSHI , NUHA YUKIO , KIJIMA TAKASHI
IPC分类号： H01B7/14 , H01B7/17 , H02G1/10
摘要： PROBLEM TO BE SOLVED: To provide a doubly armored submarine cable suitable for a long laying section and a sea region where the tidal current is fast. SOLUTION: The outer periphery of a cable body 2 is doubly shielded with an inner armor body 3 and an outer armor body 4. The inner armor body 3 is formed with FRP wires 16 and iron wires 17, and the outer armor body 4 is formed with iron wires 20. The inner armor body 3 formed of the FRP wires 16 and the iron wires 17 and the outer armor body 4 formed of the iron wires 20 are twisted in the same winding direction. The twisting pitches of the FRP wires 16 and the iron wires 17 forming the inner armor body 3 are made larger than the twisting pitch of the iron wires 20 forming the outer armor body 4, and they are set to 30 times the layer core diameter or smaller of the inner armor body 3 formed with the FRP wires 16 and the iron wires 17. An anti-corrosive layer 24 is formed around the outer armor body 4, and a friction resistance reduction layer 25 is formed around the anti-corrosive layer 24.

4. 发明专利

JP2002100244A DOUBLY ARMORED SUBMARINE CABLE AND ITS LAYING METHOD 失效
公开(公告)号：JP2002100244A
公开(公告)日：2002-04-05
申请号：JP2000291870
申请日：2000-09-26
申请人： OKINAWA ELECTRIC POWER CO LTD , FURUKAWA ELECTRIC CO LTD
发明人： NAGAYAMA KIYOSHI , NUHA YUKIO , KIJIMA TAKASHI
IPC分类号： H01B7/14 , H01B7/17 , H01B7/18 , H02G1/10
摘要： PROBLEM TO BE SOLVED: To provide a doubly armored submarine cable suitable long laying section and in a sea region where the tidal current is fast. SOLUTION: The outer periphery of a cable body 2 is doubly shielded with an inner armor body 3 and an outer armor body 4. The inner armor body 3 is formed with FRP wires 16, and the outer armor body 4 is formed with iron wires 19. The inner armor body 3 formed of the FRP wires 16 and the outer armor body 4 formed of the iron wires 19 are twisted in the same winding direction. The twisting pitch of the FRP wires 16 forming the inner armor body 3 made larger than the twisting pitch of the iron wires 19 forming the outer armor body 4 is set to be less than 30 times the layer core diameter of the inner armor body 3 formed with the FRP wires 16. An anti-corrosive layer 23 is formed around the outer armor body 4, and a friction resistance reduction layer 24 is formed around the anti-corrosive layer 23.

5. 发明专利

JP2000285741A DOUBLE-ARMORED SUBMARINE CABLE AND ITS LAYING METHOD 失效
公开(公告)号：JP2000285741A
公开(公告)日：2000-10-13
申请号：JP9135399
申请日：1999-03-31
申请人： OKINAWA ELECTRIC POWER CO LTD , FURUKAWA ELECTRIC CO LTD
发明人： TAKARA ISAMU , NUHA YUKIO , YARA HIROKI , KIJIMA TAKASHI , IWASAKI KUNIO
IPC分类号： H01B7/14 , G02B6/44 , G02B6/46 , H01B7/17 , H01B11/22 , H02G1/10 , H02G9/02
摘要： PROBLEM TO BE SOLVED: To provide a double-armored submarine cable suitable to be laid in a sea area where the laying zone is long and the tidal current is fast. SOLUTION: The outer periphery of a cable body 2 is doubly shielded with an inner armor body 3 and an outer armor body 4. The inner armor body 3 is formed with FRP wires 16, and the outer armor body 4 is formed with iron wires 19. The inner armor body 3 formed of the FRP wires 16 and the outer armor body 4 formed of the iron wires 19 are twisted in the same winding direction. The twisting pitch of the FRP wires 16 forming the inner armor body 3 is made larger than the twisting pitch of the iron wires 19 forming the outer armor body 4, and it is set to 30 times the layer core diameter or smaller of the inner armor body 3 formed with the FRP wires 16.

6. 发明专利

JPH02229790A APPARATUS FOR PRODUCING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH02229790A
公开(公告)日：1990-09-12
申请号：JP5156289
申请日：1989-03-03
申请人： FURUKAWA ELECTRIC CO LTD
发明人： OZAWA SHOICHI , KIJIMA TAKASHI , KIKUTA TOSHIO
IPC分类号： C30B27/02 , H01L21/208
摘要： PURPOSE:To facilitate the dissociation of a single crystal from a crucible and a liquid sealant with a device for executing a TKM method using the liquid sealant by providing a means for removing the liquid sealant from the crucible after the solidification of a raw material melt. CONSTITUTION:Polycrystalline raw materials of polycrystal GaAs and B2O3 (liquid sealant) are put into the crucible 14 and a seed crystal 1 is attached to a pulling-up shaft 4. The inside of a high-pressure vessel 13 is evacuated to a vacuum. Ar which is an inert gas is introduced and the pressure and temp. thereof are increased to melt the raw materials. The seed crystal 1 is then brought into contact with the raw material melt 2 and the temp of heaters 5, 6 is controlled to execute seeding. While the temp. in a melt zone and a low-temp. zone is controlled to 1250 deg.C to 900 deg.C, the seed crystal 1 and the crucible 14 are moved upward and the melt 2 is fully solidified to the single crystal. The crucible 14 is moved toward a liquid sealant container 9 which is made of quartz and is provided above the heater 5. The container 9 is heated to the temp. higher than the temp. around the crucible 14 by a heater 10. The pressure in the container 9 drops and the sealant 3 is sucked into the container 9 when the nozzle at the front end of the container 9 is brought into contact with the sealant 3 and the temp. of the heater 10 is lowered.

7. 发明专利

JPH02221193A PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH02221193A
公开(公告)日：1990-09-04
申请号：JP4038689
申请日：1989-02-22
申请人： FURUKAWA ELECTRIC CO LTD
发明人： KIJIMA TAKASHI , OZAWA SHOICHI , KIKUTA TOSHIO
IPC分类号： C30B27/02 , H01L21/208
摘要： PURPOSE:To obtain the high-quality single crystal having a low dislocation density at the time of producing the single crystal with an apparatus for producing the compd. semiconductor crystal consisting of T.K, M by executing temp. control while using >=3 heaters covering the melt zone, solid-liquid boundary and solidifying zone of the above-mentioned apparatus. CONSTITUTION:An inert gaseous atmosphere is maintained in a high-pressure vessel 1 and a seed crystal 8 is brought into contact with a compd. semiconductor melt 6 covered with a liquid sealant 7 in a crucible 2. While the sealed crystal 8 and the crucible 2 are kept rotated in the same direction, the seed crystal is resin together with the crucible 2 to the dotted line position of the solidifying zone and after the melt 6 is fully solidified, the crystal is transferred from the crucible 2' and is cooled. The four independent heaters 10 to 13 around the crucible are used in this production process and the heater 10 is so energized that the solidified single crystal is not rapidly cooled. The heater 11 is energized to improve the temp. gradient near the solid-liquid boundary by the heater 12 and the heater 12 is a main heater to hold the melt 6. The heater 13 is energized only in the initial period of solidification as the temp. gradient in the initial period of solidification and the temp. gradient during the solidification are not uniform when the melt 6 is held.

8. 发明专利

JPH02204396A APPARATUS FOR PRODUCING SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH02204396A
公开(公告)日：1990-08-14
申请号：JP2469889
申请日：1989-02-02
申请人： FURUKAWA ELECTRIC CO LTD
发明人： OZAWA SHOICHI , KIJIMA TAKASHI , KIKUTA TOSHIO
IPC分类号： C30B27/02 , H01L21/208
摘要： PURPOSE:To allow easy taking-out of the single crystal from a crucible by providing a plug in the bottom of the crucible for housing a raw material melt and forming the plug slidable in the axial direction of the crucible. CONSTITUTION:This apparatus for producing the single crystal of a compd. semiconductor is formed of a high pressure vessel 1, the crucible 3 provided therein, heaters 4, 5 provided around the same, and means 2, 6 for moving the crucible 3 upward while bringing a seed crystal 12 into contact with the raw material melt 13, etc. The raw material melt 13 and a liquid sealing medium 14 are contained in the above-mentioned crucible 3. The crucible 3 has the plug 7 in the bottom of the crucible 3 and the plug 7 is formed slidable in the axial direction of the crucible 3 by a driving mechanism.

9. 发明专利

JPH02204395A APPARATUS FOR PRODUCING SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH02204395A
公开(公告)日：1990-08-14
申请号：JP2469789
申请日：1989-02-02
申请人： FURUKAWA ELECTRIC CO LTD
发明人： OZAWA SHOICHI , KIJIMA TAKASHI , KIKUTA TOSHIO
IPC分类号： C30B27/02 , H01L21/208
摘要： PURPOSE:To prevent the generation of strains in the single crystal and to allow easy taking-out of the single crystal from a crucible by forming the crucible for contg. a raw material melt, etc., into double crucibles and providing a fine hole in the bottom of the inner crucible so that a buffer melt can be packed between the inside and outside crucibles. CONSTITUTION:This apparatus for producing the single crystal of a compd. semiconductor is formed of a high pressure vessel 1, the crucibles 3, 4 provided therein, heaters 5, 6 provided around the same and means 2, 7 for moving a seed crystal 13 and the crucibles 3, 4 upward. The raw material melt 14 and the liquid sealing medium 12 are contained in the above-mentioned crucibles 3, 4. The crucible is made double and the fine hole 10 is bored in the bottom of the inner crucible 4. The buffer melt 11 is packed between the inside and outside crucibles 3 and 4.

10. 发明专利

JPH02167888A PRODUCTION OF CRYSTAL OF COMPOUND SEMICONDUCTOR OF III-V 失效
公开(公告)号：JPH02167888A
公开(公告)日：1990-06-28
申请号：JP32061288
申请日：1988-12-21
申请人： FURUKAWA ELECTRIC CO LTD
发明人： KIJIMA TAKASHI , OZAWA SHOICHI , KIKUTA TOSHIO
IPC分类号： C30B27/02 , C30B29/40 , H01L21/208
摘要： PURPOSE:To obtain high-quality uniform single crystal of compound semiconductor of III-V in liquid encapsulated Czochralski method by moving a crucible and seed crystal to an upper low-temperature zone in a state of the seed crystal being in contact with melt of compound semiconductor of III-V and coagulating melt to form single crystal. CONSTITUTION:The top of melt 11 of compound semiconductor of III-V in a crucible 3 whose surroundings are covered with an inert gas atmosphere under $1atm is coated with the melt 11 and an inert liquid encapsulating agent 10 (e.g. B2O3). Then seed crystal 9 of compound semiconductor of III-V is brought into contact with the melt 11 of semiconductor. Then in this state, the crucible 3 and seed crystal 9 are moved to an upper low-temperature zone 5, the melt 11 in contact with the seed crystal 9 in the crucible 3 is coagulated and single crystal of compound semiconductor of III-V is formed to prevent occurrence of polycrystal and twin and to obtain the single crystal of compound semiconductor (e.g. GaAs) of III-V.

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