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    • 6. 发明专利
    • SEMICONDUCTOR PELLET PICK-UP DEVICE
    • JPH0278244A
    • 1990-03-19
    • JP22866488
    • 1988-09-14
    • HITACHI LTD
    • SASAKI HARUOSHIBA MITSUAKIITO SHUICHI
    • H01L21/67H01L21/68
    • PURPOSE:To reduce the unsatisfactory picking up of a semiconductor pellet by a method wherein an adhesive type adsorption means is provided on the pellet thrust-up surface of a thrust-up block and on the inclined surface which retains the semiconductor pellet. CONSTITUTION:On a semiconductor pellet pick-up device, a pyramid-shaped vacuum attracting collet 16 is arranged at the position opposing to the thrust-up surface 3A of a thrust-up block 3. An adhesive tape, on which a plurality of solid-state image pick-up elements 2 are fixed to the surface, is arranged between the thrust-up surface 3A and the attraction collet 16. The inclined surface 3B of the thrust-up block 3 is constituted in such a manner that the other adjacent solidstate image pickup element 2 will be maintained at the prescribed angle against the solid-state image pickup element 2 to be thrusted up by the thrust-up surface 3A. A suction hole 3C is provided on the inclined surface 3B, and the suction hole 3C is connected to a vacuum source 5 through a vacuum guide hole 3D. The solid-state image pickup element 2, which is thrust up by the thrust-up surface 3A and a thrust-up needle 4, is adsorbed and retained by the vacuum collet 16. Through these procedures, unsatisfactory picking up of the semiconductor pellet can be reduced.
    • 7. 发明专利
    • VERTICAL HEATING APPARATUS
    • JPS63241928A
    • 1988-10-07
    • JP7405087
    • 1987-03-30
    • HITACHI LTD
    • SASAKI HARUOHIROSE HIDEYUKI
    • H01L21/027H01L21/22H01L21/30
    • PURPOSE:To heat-treating wafers while upwardly or downwardly moving the wafers one by one by fixing the first transfer rods relative to the axial direction, and making the second transfer rods upwardly and downwardly movable. CONSTITUTION:Three or more first and second transfer rods 10, 11 are respectively provided extending to the up and down directions of a heating space 3. And on these transfer rods 10, 11, a plurality of wafer receivers 12, 13 are disposed along the length direction thereof at a predetermined pitch size interval, each transfer rod is made rotatable, and the second transfer rods 11 are enabled to upwardly and downwardly move relative to the other first rods 10 with a stroke equal to or larger than the predetermined pitch size. As a result, by the relative upward and downward motions of the second transfer rods and the rotational motions of both rods in synchronism therewith, it will be enabled to sequentially move a wafer W from the lower position to the upper or lower position of the heating space 3 while causing the wafer to alternately be supported by the wafer receivers 12, 13 of the respective transfer rods, and with this, it is possible to accomplish a heat treatment with wafers W being upwardly or downwardly moved one by one.
    • 8. 发明专利
    • DRY ETCHING UNIT
    • JPS60171728A
    • 1985-09-05
    • JP2707284
    • 1984-02-17
    • HITACHI LTD
    • SASAKI HARUONISHIMURA KAZUYUKI
    • H01L21/302
    • PURPOSE:To enable a wafer to be etched at a uniform speed for improving the pattern precision, by arranging a parallel-plate electrode consisting of upper and lower electrodes within a chamber while burying a plurality of ring-shaped temperature control pipes in the lower electrode, any by circulating temperature controlled liquids independently in each of the pipes. CONSTITUTION:A chamber 1 is mounted on a stage 3 while it is hermatically sealed by means of an O ring 2. A parallel-plate electrode consisting of an upper electrode 4 and a lower electrode 5 is arranged within the chamber 1. The upper and lower electrodes 4 and 5 are grounded. A plurality of ring-shaped temperature control pipes 7 are buried in the lower electrode 5, and temperature controlled liquids 8a, 8b, 8c and 8d which are constantly temperature controlled by a temperature control unit (not shown) are independently circulated in each of the pipes. The temperature controlled liquids 8a-8d are independently controlled so as to have different temperatures from one another. Further, the temperature control pipes 7 are surrounded by a heat insulating material 9 so that the temperature precision of each pipe 7 is maintained by preventing the pipes from dissipating heat to or receiving it from the outside.