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    • 1. 发明专利
    • MANUFACTURING EQUIPMENT AND METHOD OF THIN FILM PHOTOELECTRIC TRANSDUCER
    • JPH09307128A
    • 1997-11-28
    • JP12414896
    • 1996-05-20
    • FUJI ELECTRIC CO LTD
    • FUJIKAKE SHINJIICHIKAWA YUKIMI
    • C23C16/54H01L21/205H01L31/04
    • PROBLEM TO BE SOLVED: To form a photoelectric conversion layer having high quality multilayered structure with height productivity by forming each thin film on a belt type flexible substrate wound up from one roll to the other roll. SOLUTION: In a stepping roll system which stops a substrate and form a film, an intermediate storing mechanism capable of storing substrates 1 for one frame, such as movable roll mechanism, is installed between a plurality of reaction chambers for film formation. The movable roll mechanism consists of, e.g. two carrying rolls 4 and a movable roll 5. Thereby the opening time of each reaction chamber can be shifted and mutual diffusion of reaction gas can be restrained, so that the conventional evacuation time for preventing mutual diffusion is made unnecessary. As a result, the tact time can be reduced by 17-20%. In a roll to roll film forming system which continuously forms a film while moving a substrate, mutual diffusion of reaction gas between reaction chambers is restrained and film quality is improved, by installing a valve mechanism 55 with a roll between the reaction chambers in which mechanism a movable roll mechanism 54 and gate valves 20 are combined.
    • 2. 发明专利
    • MANUFACTURE OF THIN FILM SOLAR CELL
    • JPH06291348A
    • 1994-10-18
    • JP7991893
    • 1993-04-07
    • FUJI ELECTRIC CO LTD
    • ICHIKAWA YUKIMI
    • H01L31/04
    • PURPOSE:To prevent defects from being produced upon a semiconductor layer by winding a band-shaped film simultaneously when winding a thin film semiconductor layer whose film is formed on a band-shaped flexible board. CONSTITUTION:A band-shaped flexible board 3 wound around a roll 2 vertically installed in its axial direction in a film formation chamber 1 has formed an electrode layer on one plane already and it is unwound from the roll 2 so that a thin film semiconductor layer may be formed on the electrode layer by way of a guide roller 12 in a thin film formation tank 4. By way of a guide roller 12, it is wound up around a winding roller 5 installed to the opposite side of the thin film formation tank 4. During this operation, A film which is thinner than the width of the board 3 unwound by a roller 6 is simultaneously wound up with the roll 5. This construction makes it possible to prevent the thin film semiconductor layer from coming into direct contact or stronger direct contact with a film surface during winding operation, and what is more, to enhance the generation of short circuits when forming a second electrode layer and upgrade manufacturing yields of thin film solar cells.
    • 3. 发明专利
    • MANUFACTURE OF THIN FILM SOLAR CELL
    • JPS6461961A
    • 1989-03-08
    • JP21984587
    • 1987-09-02
    • FUJI ELECTRIC CO LTD
    • IHARA TAKUROICHIKAWA YUKIMISAITO KIYOO
    • H01L31/04H01L27/142
    • PURPOSE:To increase the efficiency of an electricity generation area of the title solar cell and assure the manufacture of the solar cell at a low cost with high reliability without contamination and damage of a semiconductor layer, by performing series connection between unit cells arranged in a line utilizing a gap between adjacent unit cells. CONSTITUTION:A first electrode layer comprising a SnO2 film is deposited entirely on a glass substrate 1 which is then patterned into electrodes 21, 22... by a laser scribing method. Then, an amorphous semiconductor layer 3 is formed on said patterned electrodes, on which a second electrode layer 4 comprising an Al thin film is further formed without patterning the amorphous semiconductor layer. A YAG laser is employed for electrical connection. A light beam of the laser enters from the side of the Al thin film or the second electrode 4. Thereupon, the laser beam 6 is focused such that the Al thin film and the amorphous semiconductor layer are discontinuously removed with intermediate portions therebetween being left behind. That is, through-holes 71, 72..., which extend to the electrodes 21, 22..., are made on one hand, and on the other hand the portions where the Al thin film 4 and the amorphous semiconductor layer 3 are removed and portions of good conductivity which are not removed are alternately formed, for assuring good electrical connection among the unit cells.
    • 4. 发明专利
    • PLASMA CVD EQUIPMENT
    • JPS62262419A
    • 1987-11-14
    • JP10617086
    • 1986-05-09
    • FUJI ELECTRIC CO LTD
    • NABETA OSAMUICHIKAWA YUKIMI
    • H01L21/205H01L31/04
    • PURPOSE:To perform decomposition of each material gas while preventing residues produced during decomposition of other material gas from being entrained into the forming film and to obtain a high-quality thin film, by providing and distributing several groups of hollow cathodes classified by material gases for which they are exclusively and independently used while providing anodes adjacent to the cathodes. CONSTITUTION:Hollow cathodes are divided into three rows of hollow cathodes exclusively for diborane 41, hollow cathodes exclusively for phosphine 42 and hollow cathodes exclusively for silane 43. Anodes 5 are arranged adjacent to the cathodes 41, 42 and 43. The cathodes 41, 42 and 43 and the anode 5 are connected to discharge power sources 61, 62 and 63 via changeover switches 71, 72 and 73. One of the switches 71, 72 and 73 is closed to supply the electrodes with electric power while the inside of a reaction furnace 1 is evacuated through an exhaust port 8. Thereby, the material gases supplied to the cathodes 41, 42 and 43 are decomposed by glow discharge plasma and plasma activated species are discharged from the respective cathodes 41, 42 and 43. In this manner decomposition of each material gas can be performed, while preventing residues produced by decomposition of other material gas from being entrained int eh forming film. Thus, a thin film having high quality can be obtained.
    • 5. 发明专利
    • LASER CVD DEVICE
    • JPS62183111A
    • 1987-08-11
    • JP2479986
    • 1986-02-06
    • FUJI ELECTRIC CO LTD
    • ICHIKAWA YUKIMI
    • H01L21/31H01L21/205H01L21/263
    • PURPOSE:To enable different kinds of piled thin films, alloy thin films, or thin films of multi-element to be uniformly formed on a substrate in a large area, by arranging raw material gas introduced tubes in plurals and each nozzle in line in the incident direction of laser light, and making a substrate support movable on the same flat plane as the substrate plane. CONSTITUTION:Laser light 2 incident to a window 3 of a reaction container 4 is collected near a nozzle assembler 20 by a lens 13. Raw material gas ejected from the nozzle of the nozzle assembler 20 synchronizing with the laser pulse is decomposed to form a radical ejection is moved inside the similar flat plane to perform uniform film formation. In order to utilize laser light effectively, the light is reflected again on a concave mirror 14 to be focused near the nozzle. In the nozzle assembler 20 comprising a plural number of nozzles, any value can be opened by exchanging a switch 26 of a solenoid electromagnet 25 to supply voltage pulses from a pulse generator 27. Therefore, ejection of gases concurrently supplied through all nozzles of the raw material gas-introduced tubes 11 and that through only a specific nozzle can be easily done. And, because the laser light can be focused before a specific orifice by adjusting a position of the lens 13, processes of photo decomposition is the raw material gas can be controlled every nozzle.
    • 6. 发明专利
    • LASER CVD APPARATUS
    • JPS61225819A
    • 1986-10-07
    • JP6594585
    • 1985-03-29
    • FUJI ELECTRIC CO LTD
    • ICHIKAWA YUKIMI
    • B01J19/12C23C16/48H01L21/205H01L21/263H01L21/31
    • PURPOSE:To improve utilization efficiency of a raw gas and a laser light by a method wherein the raw gas is spouted out from a nozzle into a reaction chamber against a substrate and the laser light is focussed and applied to the gas stream converged by the nozzle. CONSTITUTION:A susceptor 5 is provided in a reaction chamber 4 and a substrate 6 is attached to the susceptor 5. A nozzle 12 linked to a raw gas introduction tube 11 for spouting out raw gas is so attached as to face the substrate 6. A laser light 2 is focussed on the tip part of the nozzle 12 by a lens 13 through a window 3. The inside of the reaction chamber 4 is evacuated by a vacuum pump through an evacuation outlet 8 in order to convert the gas stream spouted out from the nozzle 12 into free expansion flow 22. With this method, the laser light can be applied to the whole material gas supplied into the reaction chamber 4. With this constitution, utilization efficiency of both of the raw gas and the laser light is improved.
    • 8. 发明专利
    • MANUFACTURE OF THIN FILM SOLAR BATTERY
    • JPH02298079A
    • 1990-12-10
    • JP11983689
    • 1989-05-12
    • FUJI ELECTRIC CO LTD
    • ICHIKAWA YUKIMISATO KOKI
    • H01L31/04
    • PURPOSE:To acquire a good contact having a small contact resistance and to realize a low cost by using a specific metallic powder of approximately spherical shape as a filler of conductive paste which is used for a second electrode provided to the counter side of a light transmitting insulating substrate. CONSTITUTION:In a manufacture process of a thin film solar battery having a second electrode which is formed by applying and firing a light transmitting first electrode to the substrate side of a semiconductor thin film on a light transmitting insulating substrate, and conductive paste which consists of a metallic powder as a filler and a resin as a combining material to the counter side of the substrate, a metallic powder of an approximately spherical shape is contained as a filler of conductive paste. When an average grain radius is rmcm, an average number per cm is n, a short-circuit current density of a thin film solar battery to be manufactured is JA/cm and a sheet resistance of an amorphous semiconductor layer which is in contact with the second electrode is R3OMEGA/square, a value of an equation is made smaller than 0.1. Spherical metallic powders 51, 52, 53... are arranged on the amorphous semiconductor layer 30 at approximately equal intervals in contact therewith.
    • 9. 发明专利
    • THIN FILM SOLAR CELL
    • JPH02237081A
    • 1990-09-19
    • JP5751589
    • 1989-03-09
    • FUJI ELECTRIC CO LTD
    • ICHIKAWA YUKIMI
    • H01L31/04
    • PURPOSE:To omit a patterning process so as to enable the reduction of manhours by a method wherein the surfaces of thin film semiconductor layers and the inner face of a gap between the layers are continuously coated with a transparent conductive layer. CONSTITUTION:A transparent electrode formed of a SnO2 film is provided onto a glass substrate 1, which is patterned in a required width to form two or more rectangular transparent electrodes 21, 22, 23.... Then, an amorphous silicon layer provided with a P-I-N junction is deposited thereon, which is patterned to form rectangular thin film conductor layers 31, 32, 33.... The ends of the semiconductor layers 31, 32, 33... are located at gaps between the transparent electrodes 21 and 22 and 23, and 23 and 24 respectively. A transparent conductive layer 6 of ZnO or the like is uniformly formed thereon, and a layer of Ag or Al is uniformly formed and divided into metal electrodes 41, 42, 43.... By this setup, a thin film solar cell of this design can be easily manufactured at a low cost.
    • 10. 发明专利
    • MANUFACTURE OF SOLAR BATTERY DEVICE
    • JPH01257376A
    • 1989-10-13
    • JP8593588
    • 1988-04-07
    • FUJI ELECTRIC CO LTD
    • IHARA TAKUROICHIKAWA YUKIMISATO KOKI
    • H01L31/04
    • PURPOSE:To reduce the number of manufacturing processes and damages of thin film semiconductor layers by a method wherein the thin film semiconductor layers and rear electrode layers provided on them are patterned into the identical pattern by laser scribing and series connection parts made to be conductive in the scribing process are separated from the respective rear electrodes by patterning with a mask containing carbon powder. CONSTITUTION:When thin film semiconductor layers 31-33 and rear electrode layers 41-43 are subjected to laser scribing to form the identical pattern, conductive parts are created at the edge parts of the semiconductor layers and function as series connection parts 61-63. Then the series connection parts of the one side of the rear electrodes are separated by using printed masks 71-73 made of paste containing carbon powder. With this constitution, a photoetching process can be eliminated and the paste containing carbon powder functions to protect the rear electrodes and the thin film semiconductor layers, so that damages caused by a wet process can be avoided.