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1. 发明专利

JP2003158281A METHOD AND APPARATUS FOR MANUFACTURING THIN-FILM PHOTOVOLTAIC DEVICE 审中-公开
公开(公告)号：JP2003158281A
公开(公告)日：2003-05-30
申请号：JP2001355591
申请日：2001-11-21
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： H01L21/205 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To prevent characteristics from changing at the time of start and finish of cell formation, which is caused by the change of the amount of impurities in an active layer attendant on the change of desorbed gas in a continuous cell-formation by a plasma enhanced CVD. SOLUTION: A p-type or n-type element to be added in the thin-film formation of an active layer is changed for every cell in correspondence with the change of the desorbed gas. In this case, the adding amount is mechanically determined beforehand for each cell number, or determined by measuring the amount of impurities in a gas at the time of film formation, and feeding back the measured result.

2. 发明专利

JPH11177108A THIN FILM SOLAR BATTERY AND ITS MANUFACTURE 失效
公开(公告)号：JPH11177108A
公开(公告)日：1999-07-02
申请号：JP33833697
申请日：1997-12-09
申请人： FUJI ELECTRIC CO LTD
发明人： SATO KOKI , FUJIKAKE SHINJI
IPC分类号： H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a thin film solar battery provided with translucency for not lowering power generation for more than an area allocated to a translucent part and its manufacture. SOLUTION: For a thin film solar battery, plural pieces of unit solar batteries composed by providing a first electrode layer 2 on a substrate and a transparent second electrode layer 5 on an opposite side across a photoelectric conversion layer 4 on one surface of a light transmissive insulating substrate 1, by providing back surface electrode layers 3 and 6 on the other surface (defined as a back surface) of the substrate, and by connecting the back surface electrode layer and the second electrode layer on the inner wall surface of a collector hole H2 passed through the substrate are formed with the substrate in common. The extension part of the first electrode layer of the unit solar battery is connected with the extension part of the back surface electrode layer of the adjacent unit solar battery on the inner wall surface of a hole H1 for serializing passed through the substrate. As translucent windows W1 and W2 for transmitting light, in the thin film solar battery, formation is performed at least from the removed part of the first electrode layer 2 or/and the overlap of the removed parts of the back surface electrode layers 3 an 6.

3. 发明专利

JPH10233520A METHOD AND DEVICE FOR MANUFACTURING THIN-FILM SOLAR CELL 失效
公开(公告)号：JPH10233520A
公开(公告)日：1998-09-02
申请号：JP3479997
申请日：1997-02-19
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： H01L21/205 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a method and device for manufacturing a thin-film solar cell wherein a thin-film solar cell of high photoelectric conversion efficiency is manufactured at high operation rate. SOLUTION: A plurality of film-forming chambers comprising a reaction chamber 22 where film-forming reaction is performed and a heater chamber 32 provided with a heater 31 are provided. While, in the film-forming camber, a film substrate 1 of long size is step-transported, a thin-film which constitutes a thin-film solar cell is formed on a substrate 1, and the openings of a reaction chamber 22 and heater chamber 32 are sealed up with the substrate in between in film-forming. Here, the opening of the heater chamber 32 is covered with a shielding member 3p. By introducing hydrogen gas or material gas of film into the heater chamber 32, temperature control for the substrate 1 is performed. A material gas introduction opening 23, valves 41 and 42, and a vacuum pump 51 are provided.

4. 发明专利

JPH0888391A INSTALLATION OF SOLAR BATTERY FOR HOUSE 失效
公开(公告)号：JPH0888391A
公开(公告)日：1996-04-02
申请号：JP22446894
申请日：1994-09-20
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： E04D13/18 , H01L31/04 , H01L31/042
摘要： PURPOSE: To reduce loss due to reflection of incident light by an air gap generated between a solar roofing laid all over a roof and a surface protection material such as reinforced glass installed thereon and lowering of water resistance due to invasion of water to the air gap. CONSTITUTION: A protection film 4 of a solar roofing 10 and a surface protection board 5 are adhered by adhesive 6 or a surface protection board is thermally bonded directly to exposed sealing resin 3 without providing the protection film 4 to the solar roofing 10. Thereby, an air gap is eliminated and reflection loss is reduced by approximating refractive index of the surface protection board 5 and refractive index of adhesive or the sealing resin 3.

5. 发明专利

JPH06177409A MANUFACTURE OF THIN FILM SOLAR BATTERY 失效
公开(公告)号：JPH06177409A
公开(公告)日：1994-06-24
申请号：JP32586592
申请日：1992-12-07
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： H01L21/205 , H01L31/04
摘要： PURPOSE:To reduce a unit work time by cleaning a film formation chamber which was used for a doped film formation of a p-i-n junction by a method such as the same operation as an intrinsic semiconductor film formation. CONSTITUTION:A susceptor 2 whereon a substrate 1 is mounted is carried to a first film formation chamber 12, and a first p-i-n junction p-layer 21, a p/i interface layer 22, an i-layer 23, an n-layer 24, a second p-layer 25 and a second p/i interface layer 26 are formed one by one. Then, the susceptor 2 is carried to a second film formation chamber 13 and a second i-layer 27 and a second n-layer 28 are formed one by one. After the susceptor 2 is carried to an unloading chamber 14, an interior of the second film formation chamber 13 is cleaned by the same operation as film formation of an intrinsic a-Si film in the second film formation chamber 13 wherein a substrate does not exist. Impurities can be prevented from being included when an intrinsic thin film is formed on a following substrate which is carried in.

6. 发明专利

JPH03166771A THIN FILM SOLAR CELL 失效
公开(公告)号：JPH03166771A
公开(公告)日：1991-07-18
申请号：JP30601389
申请日：1989-11-25
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： H01L31/04
摘要： PURPOSE:To enhance an efficiency by sequentially laminating a first conductivity type polycrystalline silicon layer having a low resistance, a first amorphous silicon layer formed by a thermal CVD method, and a second conductivity type amorphous silicon layer formed by a plasma CVD method on an insulating board. CONSTITUTION:An n-type polycrystalline silicon layer 2 used also as a role of an electrode is formed by a thermal CVD method on a glass board 1, an i-type a-Si layer 3 is formed thereby by a thermal CVD method, and a p-i-n structure in which a p-type a-Si layer 4 is further laminated thereon is provided. A transparent conductive film is formed on the layer 4 to be used as a role of a transparent electrode 5. Thus, since deterioration of the film quality due to a stapler Wronski effect and a p-i-n junction structure which is not contaminated is realized, a thin film solar cell having high efficiency and high reliability is obtained.

7. 发明专利

JP2012199290A Solar cell module 审中-公开
标题翻译：太阳能电池模块
公开(公告)号：JP2012199290A
公开(公告)日：2012-10-18
申请号：JP2011060892
申请日：2011-03-18
申请人： Fuji Electric Co Ltd , 富士電機株式会社
发明人： SHIMOZAWA SHIN , FUJIKAKE SHINJI , SATO KOKI
IPC分类号： H01L31/042
CPC分类号： H01L31/022441 , H01L31/044 , H01L31/0443 , H01L31/0516 , Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a solar cell module including a bypass diode which has a high power generation amount per unit area and excellent productivity.SOLUTION: A solar cell module 10 includes: a solar cell assembly 20 formed by electrically connecting multiple solar cells 25 in series and a diode assembly 40 where multiple diodes 45 are aligned on a substrate 41 matching the arrangement of the solar cells 25 to which the diodes 45 are attached. The diode assembly 40 is disposed on the non light receiving surface side 20b of the solar cells. The diodes 45 electrically connect with the solar cells 25, and the solar cell assembly 20 and the diode assembly 40 are sealed by a sealing material 80 to be integrated.
摘要翻译：要解决的问题：提供一种太阳能电池模块，其包括旁路二极管，其具有每单位面积的高发电量和优异的生产率。太阳能电池模块10包括：太阳能电池组件20，其通过串联电连接多个太阳能电池25和二极管组件40形成，其中多个二极管45在与太阳能电池25的配置匹配的基板41上对准二极管45被连接到其上。二极管组件40设置在太阳能电池的非受光面侧20b上。二极管45与太阳能电池25电连接，并且太阳能电池组件20和二极管组件40被密封材料80密封以一体化。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JPH0762802A SOLAR BATTERY TILE 失效
公开(公告)号：JPH0762802A
公开(公告)日：1995-03-07
申请号：JP20675793
申请日：1993-08-23
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： E04D1/30 , E04D13/18 , H01L31/042 , H01L31/048
摘要： PURPOSE:To prevent the increase of contact resistance with a terminal by rain water, etc., and the deterioration of insulation by drawing one pole conductor among a pair or two pairs of conductors connected to a terminal box on the rear of a substrate to the front side of the substrate to put it under the next tile lapped over a ridge side. CONSTITUTION:A solar battery tile 10 is so constituted that the rear of a substrate 1 having a terminal box 4 and a solar battery 2 are laminated with a protection film 3. A leading wire 51 having + pole terminal ring 61 to a terminal from the terminal box 4 on an upper half section of the rear of the substrate 1 is drawn to the front side from a hole 8 bored in the substrate 1, and a leading wire 52 having-pole terminal ring 62 to the terminal is extended downward on the rear without passing through the substrate 1. After that, in the case of roofing, a tile connecting the leading wire 51 exposed to the front of an eaves side to the leading wire 52 in advance is lapped on the ridge side.

9. 发明专利

JPH05152592A THIN FILM SOLAR CELL AND ITS MANUFACTURE 失效
公开(公告)号：JPH05152592A
公开(公告)日：1993-06-18
申请号：JP9319192
申请日：1992-04-14
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： H01L31/04
摘要： PURPOSE:To decrease absorbing loss of light by applying materials having large optical gap on a p-layer or nlayer of the light-incoming side of a p-i-n junction structure, and at the same time, to control the reduction of factors by holding conductivity of more than 10-8S/cm. CONSTITUTION:A p-layer 3 or n-layer is formed by adding doping gas to a mixed gas of SiH4 gas and CO2 gas dilluted by H2. At the time, it is made possible to obtain the a-SiO film having powerful conductivity with the optical gap of more than 2.0eV by holding the optical gas of 2.0 to 2.2eV and holding sigmaph/sigmad of less than 5. To obtain such the a-SiO film, the rate of dilution of hydrogen at the time of film formation should be 10 to 50, and the temperature of a substrate should be 150 to 250 deg.C.

10. 发明专利

JPH01257375A MANUFACTURE OF THIN FILM SOLAR CELL 失效
公开(公告)号：JPH01257375A
公开(公告)日：1989-10-13
申请号：JP8594088
申请日：1988-04-07
申请人： FUJI ELECTRIC CO LTD
发明人： FUJIKAKE SHINJI
IPC分类号： H01L31/04
摘要： PURPOSE:To avoid the deterioration caused by light and the degradation of an efficiency by a method wherein an i-type layer is formed by a thermal CVD method and a layer formed on the light entering side of the i-type layer is formed by a low temperature plasma CVD method. CONSTITUTION:An n-type a-Si layer 12 and an i-type a-Si layer 13 are built up on a conductive substrate 11 formed by the vacuum evaporation of Ag onto a glass plate and a carbon-doped p-type a-Si layer 14 is formed by a plasma CVD method to form a pin structure. A collection electrode 16 made of Al is provided on the p-type layer 14 with a transparent conductive film 15 between. Thus, the i-type layer in the pin junction structure mainly made of a-Si is formed by a thermal CVD method to suppress the deterioration of the film quality caused by a Stebler-Wronsky effect and the layer forming a junction with the light entering side of the i-type layer is formed by a low temperature plasma CVD method to suppress the thermal diffusion of impurities into the i-type layer. With this constitution, the deterioration of the junction characteristics of the light entering side is suppressed and the efficiency is improved.

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