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    • 8. 发明专利
    • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD
    • JPH10200018A
    • 1998-07-31
    • JP344797
    • 1997-01-13
    • HITACHI LTD
    • YAMAGUCHI EIJIWATANABE YUJI
    • H01L23/12H01L21/56H01L23/02H01L23/29
    • PROBLEM TO BE SOLVED: To improve heat-radiation characteristics and connection-reliability of a heat radiation member jointed to a semiconductor element, by covering a semiconductor element supported on an element mounting substrate with a heat radiation member, and, when resin-sealing the joint part between the semiconductor element and the element mounting substrate, supplying a sealing resin through a through hole of a heating member. SOLUTION: A semiconductor element 1 is supported on an element mounting substrate 2, and a joint part 4 between the semiconductor element 1 and the element mounting substrate 2 is sealed up with a sealing resin 5. Further, a heat radiation member 6 where, comprising a recessed part 6a where an element joint part 6b jointed to a rear surface 1a of the semiconductor element 1, a through hole 6c whose one end is opened near the element joint part 6b of the recessed part 6a with the other end opened outside is provided, is provided. When the sealing-resin 5 is supplied to the joint part 4 between the semiconductor element 1 and the element mounting substrate 2, the sealing resin 5 is supplied through the through hole 6c. The heat radiation member 6, for example, is formed by press-working with aluminum or aluminum alloy.