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1. 发明专利

JP2013202755A Substrate holding device, polishing apparatus, and polishing method 有权
标题翻译：基板保持装置，抛光装置和抛光方法
公开(公告)号：JP2013202755A
公开(公告)日：2013-10-07
申请号：JP2012076677
申请日：2012-03-29
申请人： Ebara Corp , 株式会社荏原製作所
发明人： FUKUSHIMA MAKOTO , YASUDA HOZUMI , NAMIKI KEISUKE , NABEYA OSAMU , TOGASHI SHINGO , YAMAKI AKIRA
IPC分类号： B24B37/32 , B24B37/005 , B24B37/30 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate holding device capable of adjusting a polishing profile of an edge part of a substrate.SOLUTION: A substrate holding device includes: an inner retaining ring 20 vertically movable independently of a top ring body 10 and arranged so as to surround a substrate W; an inner pressing mechanism 60 for pressing the inner retaining ring 20 against the polishing surface of a polishing pad; an outer retaining ring 30 vertically movable independently of the inner retaining ring 20 and the top ring body 10; an outer pressing mechanism 80 for pressing the outer retaining ring 30 against the polishing surface; and a support mechanism 111 for receiving lateral force applied to the inner retaining ring 20 from the substrate W during polishing of the substrate W and for tiltably supporting the outer retaining ring 30.
摘要翻译：要解决的问题：提供一种能够调节基板的边缘部分的抛光轮廓的基板保持装置。解决方案：基板保持装置包括：内部保持环20，其可独立于顶环主体10垂直移动并且布置成围绕衬底W; 用于将内保持环20压靠在抛光垫的抛光表面上的内按压机构60; 能够独立于内保持环20和顶环体10垂直移动的外保持环30; 用于将外保持环30压靠在抛光表面上的外压机构80; 以及支撑机构111，用于在基板W的抛光期间接收从基板W施加到内保持环20的横向力，并且用于可倾斜地支撑外保持环30。

2. 发明专利

JP2009178800A Polishing method and polishing device 有权
标题翻译：抛光方法和抛光装置
公开(公告)号：JP2009178800A
公开(公告)日：2009-08-13
申请号：JP2008019754
申请日：2008-01-30
申请人： Ebara Corp , 株式会社荏原製作所
发明人： FUKUSHIMA MAKOTO , TOGAWA TETSUJI , YASUDA HOZUMI , NABEYA OSAMU , SAITO SHINGO
IPC分类号： B24B37/10 , B24B37/30 , H01L21/304
CPC分类号： B24B37/345
摘要： PROBLEM TO BE SOLVED: To perform lift-off of an object to be polished from a polishing surface by safely separating the object to be polished such as a semiconductor wafer from the polishing surface without performing an overhang. SOLUTION: A surface to be polished of the object to be polished retained by a retaining unit 101A is pressed, and a liquid is fed to the polishing surface while the object to be polished and the polishing surface are subjected to relative motion to perform treatment relative to the surface to be polished. After the treatment is completed, in a state where a flow rate of the liquid fed to the polishing surface is reduced, the object to be polished is sucked by the retaining unit 101A to be separated from the polishing surface. When it is determined that the object to be polished is left from the polishing surface and is sucked to the retaining unit, the retaining part is raised with the object to be polished. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过从抛光表面安全地分离待研磨物体（如半导体晶片）而不执行突出来，从抛光表面进行抛光物体的剥离。解决方案：被保持单元101A保持的被抛光物体的待抛光表面被按压，并且在抛光对象和抛光表面受到相对运动的同时将液体供给到抛光表面对待抛光表面进行处理。在处理完成之后，在进入研磨面的液体的流量减少的状态下，待研磨对象物被保持单元101A吸引而与研磨面分离。当确定要抛光的物体离开抛光表面并被吸入保持单元时，保持部分与被抛光物体一起升高。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2007208282A Polishing machine 有权
标题翻译：抛光机
公开(公告)号：JP2007208282A
公开(公告)日：2007-08-16
申请号：JP2007071591
申请日：2007-03-19
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TOGAWA TETSUJI , NOMICHI IKUTARO , NAMIKI KEISUKE , YASUDA HOZUMI , KOJIMA SHIYUNICHIROU , SAKURAI KUNIHIKO , TAKADA NOBUYUKI , NABEYA OSAMU , FUKUSHIMA MAKOTO , TAKAYANAGI HIDEKI
IPC分类号： H01L21/304 , B24B37/005 , B24B37/015 , B24B37/07
摘要： PROBLEM TO BE SOLVED: To provide a polishing machine which can perform polishing according to the thickness distribution of a thin film formed on the surface of a polishing object such as a semiconductor wafer, and attain the uniformity of a thickness after polishing. SOLUTION: This polishing machine is provided with a polishing table which has a polishing surface, and a top ring 1 holding a substrate W which is the polishing object. The top ring 1 is provided with a top ring body 2, and in the top ring body 2, there are provided an elastic pad 4 which contacts with the substrate W, and a support member 6 which supports the elastic pad 4 and is made of an insulating material. The polishing machine measures the thickness of the thin film formed on the substrate W using eddy current, while the substrate W is held with the top ring 1. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以根据形成在诸如半导体晶片的研磨对象的表面上的薄膜的厚度分布进行抛光的抛光机，并且获得抛光后的厚度的均匀性。解决方案：该抛光机设置有具有抛光表面的抛光台和保持作为抛光对象的基板W的顶环1。顶环1设置有顶环主体2，并且在顶环体2中设置有与基板W接触的弹性垫4和支撑弹性垫4的支撑构件6，该支撑构件6由绝缘材料。抛光机使用涡流测量在基板W上形成的薄膜的厚度，同时基板W与顶环1保持一致。（C）2007，JPO＆INPIT

4. 发明专利

JP2007181910A Polishing device and polishing method 有权
标题翻译：抛光装置和抛光方法
公开(公告)号：JP2007181910A
公开(公告)日：2007-07-19
申请号：JP2006124214
申请日：2006-04-27
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NABEYA OSAMU
IPC分类号： B24B37/013 , B24B37/015 , B24B49/14 , H01L21/304
CPC分类号： B24B37/015
摘要： PROBLEM TO BE SOLVED: To provide a polishing device which can obtain a uniform polishing profile while keeping a high removal rate even in a CMP process in which a removal rate greatly depends on a temperature of a polishing surface. SOLUTION: This polishing device polishes a polished face 9 of a substrate W by the relative movement between the polished face 9 and a polishing face 8 of a polishing table 1 by bringing the polished face 9 into contact with the polishing face 8. The polishing device has polishing face temperature control means 20 comprising a fluid blowing mechanism 30 blowing gas such as compression gas toward the polishing face 8, a thermography 40 measuring temperature distribution of the polishing face 8, and a controller 50. When the polished face 9 is polished, the polishing face temperature control means 20 control blow of the fluid by deciding a blowing flow rate, a temperature and a blowing position of the gas based on results measured by the thermography 40, and makes the polishing rate of the polished face 9 constant by making the polishing face 8 into a predetermined temperature distribution. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种抛光装置，即使在去除率大大取决于研磨表面的温度的CMP工艺中，也可以保持高的去除速率而获得均匀的抛光轮廓。解决方案：该抛光装置通过使抛光面9与研磨面8接触，通过研磨台1的抛光面9和研磨面8之间的相对移动来抛光基板W的抛光面9。抛光装置具有抛光面温度控制装置20，其包括向研磨面8吹送诸如压缩气体的气体的流体吹送机构30，测量研磨面8的温度分布的热成像仪40和控制器50.当抛光面9 抛光面温度控制装置20基于通过热成像测量40测量的结果来确定气体的吹送流量，温度和吹送位置来控制流体的吹送，并且使抛光面9的抛光速率使抛光面8成为规定的温度分布。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2005034959A Polishing device and retainer ring 审中-公开
标题翻译：抛光装置和保持环
公开(公告)号：JP2005034959A
公开(公告)日：2005-02-10
申请号：JP2003275406
申请日：2003-07-16
申请人： Ebara Corp , 株式会社荏原製作所
发明人： NABEYA OSAMU , TOGAWA TETSUJI
IPC分类号： B24B57/02 , B24B37/00 , B24B37/04 , B24B37/30 , B24B37/32 , B24B49/16 , B24B57/00 , H01L21/304
CPC分类号： B24B37/32 , B24B49/16
摘要： PROBLEM TO BE SOLVED: To provide a polishing device and a retainer ring, with which consumbales cost is little and an environmental load is small, have high reliability, and a short time for performing dummy polishing is enough after installing a new retainer ring in a top ring housing. SOLUTION: In this polishing device which polishes a polishing object base board Wf, by relative motion of a polishing surface 21 and the polishing object base board Wf, by pressing the polishing object base board Wf held by a base board holding surface of a top ring 1 to the polishing surface 21 of a turntable 20, the retainer ring 3 holding the outer periphery of the polishing object base board Wf held by the base board holding surface of the top ring 1, is made to have a resin ring part 31 and a metallic or ceramic ring part 32; and by connecting them to have a two-layer structure in the vertical direction by fastening both with a bolt 33. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供消耗量少，环境负荷小的抛光装置和保持环，具有高可靠性，并且在安装新的保持器之后进行虚拟抛光的时间很短环在一个顶环外壳。解决方案：在抛光对象基板Wf抛光的研磨装置中，通过将研磨面21和研磨对象基板Wf的相对运动，通过将由基板保持面保持的研磨对象基板Wf 向旋转台20的研磨面21的顶环1，保持由顶环1的基板保持面保持的研磨对象基板Wf的外周的保持环3具有树脂环部 31和金属或陶瓷环部分32; 并且通过用螺栓33紧固两者将它们连接成具有垂直方向的两层结构。（C）2005年，JPO和NCIPI

6. 发明专利

JP2004363505A Substrate holding device and polishing device 有权
标题翻译：基板保持装置和抛光装置
公开(公告)号：JP2004363505A
公开(公告)日：2004-12-24
申请号：JP2003163051
申请日：2003-06-06
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TOGAWA TETSUJI , YOSHIDA HIROSHI , FUKAYA KOICHI , NABEYA OSAMU , FUKUSHIMA MAKOTO
IPC分类号： B24B37/04 , B24B37/30 , B24B37/32 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a substrate holding device which can obtain a uniform polishing rate all over the entire of a polishing surface of a substrate and a polishing device with such a substrate holding device. SOLUTION: The substrate holding device 1 holds and presses a substrate W to a polishing surface 101a, and has a movable member 6 which can move in a vertical direction to the polishing surface 101a and pressure chambers 22, 23, 24, 25 formed of an elastic film 7. The elastic film 7 has a contact 8 in contact with the substrate W and circumferential walls 9a, 9b, 9c, 9d connecting the contact 8 to the movable member 6. The circumferential walls 9a, 9b, 9c, 9d have elastic parts 40a, 40b, 40c, 40d which can expand and contract vertically to the polishing surface 101a. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在基板的研磨面的整个整个以及具有这种基板保持装置的研磨装置上获得均匀的研磨速度的基板保持装置。解决方案：基板保持装置1将基板W保持并按压到研磨面101a，并且具有能够在垂直方向上移动到研磨面101a和压力室22,23,24,25的可动部件6 由弹性膜7形成。弹性膜7具有与基板W接触的触点8和将触点8连接到可动构件6的周壁9a，9b，9c，9d。周壁9a，9b，9c， 9d具有弹性部分40a，40b，40c，40d，它们可以垂直于抛光表面101a伸展和收缩。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004002955A Electrolytic working apparatus and method 有权
公开(公告)号：JP2004002955A
公开(公告)日：2004-01-08
申请号：JP2002324410
申请日：2002-11-07
申请人： Ebara Corp , 株式会社荏原製作所
发明人： SHIRAKASHI MICHIHIKO , YASUDA HOZUMI , KUMEGAWA MASAYUKI , OBATA ITSUKI , NABEYA OSAMU , HIROKAWA KAZUTO
IPC分类号： C25F3/00 , C25F7/00 , H01L21/3063 , H01L21/3205
摘要： PROBLEM TO BE SOLVED: To provide an electrolytic working apparatus and a method therefor in which an ion exchanger can easily and swiftly be reproduced without interrupting working, further, the load on the cleaning of the ion exchanger after the reproduction can extremely be reduced, and an installation area can be reduced. SOLUTION: The electrolytic working apparatus has a working electrode 56 freely closable to a work W, a feeding electrode 58 for feeding power to the work W, an ion exchanger 60 fitted to at least either surface on the side of the work W in the working electrode 56 and the feeding electrode 58, a reproduction part 90 provided on the space between the ion exchanger 60 and at least either the working electrode 56 or the feeding electrode 58 with the ion exchanger attached, a power source 84 for working by applying voltage to the space between the working electrode 56 and the feeding electrode 58, and an electrolytic working liquid feed part 76 for feeding a liquid for electrolytic working to the space between the work W in which the ion exchanger 60 is present and at least either the working electrode 56 or the feeding electrode 58. COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2003025214A Substrate holding device and substrate polishing device 有权
标题翻译：基板保持装置和基板抛光装置
公开(公告)号：JP2003025214A
公开(公告)日：2003-01-29
申请号：JP2001209575
申请日：2001-07-10
申请人： Ebara Corp , 株式会社荏原製作所
发明人： TOGAWA TETSUJI , NOMICHI IKUTARO , NAMIKI KEISUKE , YASUDA HOZUMI , KOJIMA SHIYUNICHIROU , SAKURAI KUNIHIKO , TAKADA NOBUYUKI , NABEYA OSAMU , FUKUSHIMA MAKOTO , TAKAYANAGI HIDEKI
IPC分类号： B24B37/005 , B24B37/30 , H01L21/304 , B24B37/00 , B24B37/04
CPC分类号： B24B37/30 , B24B37/32
摘要： PROBLEM TO BE SOLVED: To provide a substrate holding device capable of providing the same polishing quantity distribution as film thickness distribution on a surface of a semi-conductor wafer and stably polishing a substrate even in the case where film thickness of the substrate, in particular of the semi-conductor wafer has film thickness distribution different in the radial direction and a substrate polishing device using the substrate holding device. SOLUTION: This substrate holding device to pressurize the substrate W which is a polishing object on a polishing surface by holding it is furnished with a top ring main body 13, a chucking plate 17 to hold and pressurize the substrate W provided in the top ring main body 13 free to vertically move and an airtight space 26 provided above the chucking plate 17, and it restrains relative vertical motion of the top ring main body 13 and the chucking plate 17 in the middle of polishing. Pressure chambers 23, 24, 31, 32 divided in a plural number and to supply pressure fluid are formed between the chucking plate 17 and the substrate W.
摘要翻译：要解决的问题：提供一种能够提供与半导体晶片的表面上的膜厚分布相同的抛光量分布的基板保持装置，并且即使在基板的膜厚度的半导体晶片具有在径向上不同的膜厚分布和使用该基板保持装置的基板研磨装置。解决方案：通过保持在研磨面上对作为抛光对象的基板W进行加压的基板保持装置具有顶环主体13，夹持板17，用于保持和加压设置在顶环主体中的基板W 主体13自由地垂直移动，并且设置在夹板17上方的气密空间26，并且在抛光中间限制顶环主体13和夹盘17的相对垂直运动。在夹板17和基板W之间形成有多个分压并供给压力流体的压力室23,24,31,32。

9. 发明专利

JP2014004675A Polishing device and polishing method 有权
标题翻译：抛光装置和抛光方法
公开(公告)号：JP2014004675A
公开(公告)日：2014-01-16
申请号：JP2012279751
申请日：2012-12-21
申请人： Ebara Corp , 株式会社荏原製作所
发明人： FUKUSHIMA MAKOTO , YASUDA HOZUMI , NAMIKI KEISUKE , NABEYA OSAMU , TOGASHI SHINGO , YAMAKI AKIRA
IPC分类号： B24B37/32 , B24B37/30 , H01L21/304
CPC分类号： B24B37/005 , B24B7/228 , B24B37/042 , B24B37/07 , B24B37/32 , B24B49/16
摘要： PROBLEM TO BE SOLVED: To provide a polishing device and a polishing method which finely control a polishing profile of a wafer, in particular, a polishing profile of a wafer edge part.SOLUTION: A polishing device includes: a substrate holding device 1 including a substrate holding surface 45a which presses a substrate W to a polishing surface and a retainer ring 40 which is disposed so as to enclose the substrate W and contacts with the polishing surface; a rotation mechanism which rotates the substrate holding device 1 around a shaft center; and at least one local load providing mechanism 110 which provides a local load to a part of the retainer ring 40. The retainer ring 40 may tilt independently from the substrate holding surface 45a, and the local load providing mechanism 110 does not rotate integrally with the substrate holding device 1.
摘要翻译：要解决的问题：提供精细控制晶片的抛光轮廓，特别是晶片边缘部分的抛光轮廓的抛光装置和抛光方法。抛光装置包括：基板保持装置1，包括：将基板W压入研磨面的基板保持面45a和被设置为包围基板W并与抛光面接触的保持环40; 使基板保持装置1绕轴心旋转的旋转机构; 以及至少一个局部负载提供机构110，其向保持环40的一部分提供局部负载。保持环40可以独立于基板保持表面45a倾斜，并且局部负载提供机构110不与该保持环40一体地旋转。基板保持装置1。

10. 发明专利

JP2013111679A Elastic membrane and substrate holding device 审中-公开
标题翻译：弹性薄膜和基板保持装置
公开(公告)号：JP2013111679A
公开(公告)日：2013-06-10
申请号：JP2011258833
申请日：2011-11-28
申请人： Ebara Corp , 株式会社荏原製作所
发明人： FUKUSHIMA MAKOTO , WATANABE KAZUHIDE , YASUDA HOZUMI , NAMIKI KEISUKE , NABEYA OSAMU , TOGASHI SHINGO , YAMAKI AKIRA
IPC分类号： B24B37/30 , B24B37/005 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To effectively inhibit excessive polishing of a substrate end and accurately control a polishing rate at the substrate end.SOLUTION: An elastic membrane 4 used for a substrate holding device has an abutting part 400 to be abutted against the substrate to press the substrate toward a polishing pad. A lower surface of the abutting part 400 has a flat region A and a rise region B located on an outer peripheral part of the flat region and rising upward.

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