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1. 发明专利

JP2012023085A Method for processing optical device wafer 审中-公开
标题翻译：用于处理光学器件波形的方法
公开(公告)号：JP2012023085A
公开(公告)日：2012-02-02
申请号：JP2010157754
申请日：2010-07-12
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO
IPC分类号： H01L21/301 , B23K26/00 , B23K26/38 , H01L33/02
摘要： PROBLEM TO BE SOLVED: To provide a method for processing an optical device wafer, in which handling, control, recovery, disposal, and the like of an etchant is more easily conducted and which has a low environmental load.SOLUTION: A method for processing an optical device wafer W having a plurality of scheduled dicing lines and optical devices formed in respective areas partitioned by the scheduled dicing lines comprises the steps of: covering a surface of the optical device wafer with a protection film 98; forming dicing starting point grooves 102 along the scheduled dicing lines of the optical device wafer covered with the protection film; applying dry etching to the optical device wafer in which the dicing starting point grooves are formed and etching side surfaces of the dicing starting point grooves; after the etching, dicing the optical device wafer into discrete chips in such a manner that the dicing starting point grooves serve as a starting point, by adding an external force to the optical device wafer; and removing the protection film before or after performing the dicing.
摘要翻译：要解决的问题：提供一种处理光学器件晶片的方法，其中蚀刻剂的处理，控制，回收，处置等更容易进行并且具有低的环境负荷。解决方案：一种用于处理具有多个调度的切割线的光学器件晶片W的方法和形成在由预定切割线划分的各个区域中的光学器件的步骤包括以下步骤：用保护覆盖光学器件晶片的表面电影98; 沿着由保护膜覆盖的光学器件晶片的预定切割线形成切割起点凹槽102; 对其中形成有切割起点凹槽的光学器件晶片和切割起点凹槽的蚀刻侧表面进行干蚀刻; 在蚀刻之后，通过向光学器件晶片添加外力，将光学器件晶片切割成分立的芯片，使得切割起点凹槽用作起始点; 并且在执行切割之前或之后去除保护膜。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2010199114A Solar cell 审中-公开
标题翻译：太阳能电池
公开(公告)号：JP2010199114A
公开(公告)日：2010-09-09
申请号：JP2009039014
申请日：2009-02-23
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO
IPC分类号： H01L31/04 , B24B7/24 , C03C19/00
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a solar cell capable of improving the photoelectric conversion efficiency. SOLUTION: The solar cell is configured by laminating a p-type semiconductor layer and an n-type semiconductor layer on the surface of a glass substrate; a plurality of concave and convex parts are formed on the surface of the glass substrate to increase a surface area; and the p-type semiconductor layer and the n-type semiconductor layer are laminated on the surface of the glass substrate. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够提高光电转换效率的太阳能电池。解决方案：太阳能电池通过在玻璃基板的表面上层叠p型半导体层和n型半导体层而构成; 在玻璃基板的表面上形成多个凹凸部以增加表面积; 并且p型半导体层和n型半导体层层叠在玻璃基板的表面上。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2009170510A Manufacturing method of laminated device 有权
标题翻译：层压装置的制造方法
公开(公告)号：JP2009170510A
公开(公告)日：2009-07-30
申请号：JP2008004444
申请日：2008-01-11
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO , KAWAI AKIHITO
IPC分类号： H01L21/02 , H01L21/301 , H01L21/304 , H01L23/12
CPC分类号： H01L21/78 , B23K26/032 , B23K26/044 , B23K26/0853 , B23K26/382 , B23K26/40 , B23K2203/50 , H01L21/6836 , H01L24/33 , H01L24/94 , H01L25/50 , H01L2221/68327 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01068 , H01L2924/01082 , H01L2924/14
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a laminated device whose whole thickness is made thin by laminating a wafer without damaging it even if it is thinned.
SOLUTION: A substrate wafer 200 which has a diameter which is slightly smaller than an inner diameter of a circular reinforcing part of a reinforcing wafer 20 and in which a plurality of streets 21 and a plurality of devices, which correspond to a plurality of streets 21 and a plurality of devices 22, which are formed in a device region 23 of the reinforcing wafer 20, are formed on a surface is prepared. The method comprises an electrode connection process for making a rear face corresponding to the device region 23 in the reinforcing wafer 20 confront with a surface of the substrate wafer 200, matching the corresponding streets 21 so as to bond them, forming via holes reaching electrodes formed in the devices 22 of the substrate wafer 200 in positions where the electrodes formed in the devices 22 of the reinforcing wafer 20 are positioned, burying conductors in the via holes and connecting the electrodes, and a division process for cutting the laminated wafer 250 along the street 21 after the electrode connection process and dividing it into the individual laminated devices.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供通过层压晶片而使其整体厚度变薄而不损坏其的薄片的制造方法。解决方案：具有比加强晶片20的圆形增强部分的内径稍小的直径的基板晶片200，并且其中多个街道21和多个装置对应于多个并且形成在加强晶片20的装置区域23中的多个装置22形成在表面上。该方法包括电极连接工艺，用于使与加强晶片20中的器件区域23相对应的后表面与衬底晶片200的表面相对，匹配相应的街道21以将它们结合，形成到达形成的电极的通孔在基板晶片200的装置22中，形成在加强晶片20的装置22中的电极的位置，将导体埋入通孔中并连接电极，以及沿着沿着加强晶片20切割层叠晶片250的分割处理电路连接处理后的街道21，并将其分割成各个层压装置。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2007273546A Jig for semiconductor package and receiving method of semiconductor package 有权
标题翻译：用于半导体封装的封装和半导体封装的接收方法
公开(公告)号：JP2007273546A
公开(公告)日：2007-10-18
申请号：JP2006094579
申请日：2006-03-30
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO
IPC分类号： H01L21/56 , H01L21/301 , H01L21/50 , H01L23/12
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To improve synthetically the processing capability of singulation system from the singulation of a semiconductor package to the receiving of the same into a chip tray. SOLUTION: Cutting blade releasing grooves 21 corresponding to the scheduled partitioning lines 3 of a package base material 17 are formed on the surface of a jig 20 and inject holes 24 are formed by penetrating chip corresponding regions 22 partitioned by the grooves 21 while separable type adhesive agent 25 is provided at a part, around the inject holes 24 and the package base material 17 is contacted thereto, to adhere the substrate 1 of the package base material 17 to the adhesive agent and retain the substrate 1. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了综合地提高单片化系统从单片化半导体封装到其接收芯片托盘的处理能力。解决方案：在夹具20的表面上形成与包装基材17的预定划分线3相对应的切割刀片释放槽21，并且通过穿过由槽21分隔的芯片对应区域22形成注射孔24，同时可分离型粘合剂25设置在喷射孔24周围的一部分处，并且包装基材17与其接触，将包装基材17的基板1粘附到粘合剂上并保持基板1。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2007149860A Method for splitting substrate and splitting apparatus 审中-公开
标题翻译：分割基板和分割装置的方法
公开(公告)号：JP2007149860A
公开(公告)日：2007-06-14
申请号：JP2005340696
申请日：2005-11-25
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO
IPC分类号： H01L21/301
摘要： PROBLEM TO BE SOLVED: To efficiently eliminate fragments that result from cut-based breaking of a substrate and are about to stick to the substrate when the substrate is split by cut-based breaking to improve yield. SOLUTION: In a water case 51, water is kept flowable as a result of constant supply and discharge, a wafer 1 is placed on a chuck table 61 and is submerged, and a dicing frame 6 which is fitted to the wafer 1 via a dicing tape 5, is pushed down. This stretches out the dicing tape 5, which breaks the wafer 1 along splitting preparation lines 2 along which an internal reforming layer is formed in advance by laser exposure. Fragments resulting from cut-based breaking are released into water to be eliminated from the wafer 1 to prevent the fragments from sticking to the wafer 1. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了有效地消除由于基板的切断断裂而产生的碎片，并且当基板通过基于切割的断裂分裂时，将粘附到基板上以提高产量。解决方案：在水箱51中，水由于供应和排放恒定而保持流动，将晶片1放置在卡盘台61上并被浸没，以及装配到晶片1的切割框架6 通过切割胶带5被向下推。这使得切割带5延伸，其通过激光曝光预先通过分割准备线2沿着分割准备线2而形成内部重整层。从切割断裂产生的碎片被释放到水中以从晶片1中去除，以防止碎片粘附到晶片1.版权所有：（C）2007，JPO＆INPIT

6. 发明专利

JP2004186430A Working method for semiconductor wafer 审中-公开
公开(公告)号：JP2004186430A
公开(公告)日：2004-07-02
申请号：JP2002351579
申请日：2002-12-03
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO
IPC分类号： H01L21/683 , H01L21/301 , H01L21/67 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To prevent the generation of any crack or bending in the working of a semiconductor wafer whose back face is formed with a metal film. SOLUTION: This method for working a semiconductor wafer for dividing a semiconductor wafer whose surface is formed with a plurality of circuits into semiconductor chips for those individual circuits comprises a thinning process for covering the surface of the semiconductor wafer W with a protecting member, and for erasing the back face of the semiconductor wafer W to form it with predetermined thickness; a metallization process for forming a metallic film on the back face; a transfer process for adhering the back face on which the metallic film is formed to a dicing tape T integrated with a dicing frame F, and for exposing the surface of the semiconductor wafer W by removing the protecting member from the surface; a testing process for connecting the metallic film to the ground in a status that the semiconductor wafer W is adhered to the dicing tape T, and for executing the electric test of each circuit formed on the surface; and a dividing process for dividing the semiconductor wafer W into individual semiconductor chips. COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2004056046A Method of processing soi substrate 审中-公开
公开(公告)号：JP2004056046A
公开(公告)日：2004-02-19
申请号：JP2002215000
申请日：2002-07-24
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： TAKAHASHI TOSHIAKI , ARAI KAZUNAO
IPC分类号： H01L27/12 , B24B7/22 , H01L21/00 , H01L21/02 , H01L21/306 , H01L21/76 , H01L21/762
CPC分类号： H01L21/30604 , B24B7/228 , H01L21/6708 , H01L21/76256
摘要： PROBLEM TO BE SOLVED: To provide a method of thinly processing an SOI substrate without leaving residual stress caused by grinding.
SOLUTION: The method is for processing the SOI substrate which is composed of a back layer consisting of a semiconductor substrate, an insulating layer laminated on the upper face of the back layer, a semiconductor thin film layer laminated on the upper face of the insulating layer, and a circuit formed on the surface of the semiconductor thin film layer. The method includes a grinding process for grinding the back layer to leave a prescribed thickness, and a chemical etching process for removing the back layer formed into a given thickness by the grinding process to expose the insulating layer.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP2014138037A Processing method for wafer 有权
标题翻译： WAFER的处理方法
公开(公告)号：JP2014138037A
公开(公告)日：2014-07-28
申请号：JP2013004882
申请日：2013-01-15
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： MATSUZAKI SAKAE , ARAI KAZUNAO , MIZOMOTO YASUTAKA , KAWAI AKIHITO , OBA RYUGO , KIZAKI SEIKI , TAKAYAMA YUKI , KONDO KOICHI
IPC分类号： H01L21/301
摘要： PROBLEM TO BE SOLVED: To provide a processing method for a wafer by which even a TSV wafer with a bump electrode disposed on the back of a base plate can be relatively easily divided along streets, and also entry of copper ion into the base plate can be reliably blocked.SOLUTION: A wafer, having a device formed in an area sectioned by a grid of streets in a function layer arranged over the surface of a silicon substrate, an electrode projecting from the surface of the device and also an electrode terminal connected to the device, is plasma-etched, thereby dividing the wafer into individual chips along the streets. A film of silicon dioxide (SiO) is formed on the internal peripheral surface of an electrode embedding through-hole, in which a pierced electrode formed on the silicon substrate is embedded, and also on the back and sides of each chip.
摘要翻译：要解决的问题：为了提供一种用于晶片的处理方法，即使具有设置在基板背面的凸起电极的TSV晶片也可以相对容易地沿着街道分割，并且铜离子进入基板罐可靠地阻塞。解决方案：具有在由硅衬底的表面上布置的功能层中的由街道格栅划分的区域中的器件的晶片，从器件的表面突出的电极以及连接的电极端子等离子体蚀刻，从而将晶片沿着街道划分成单独的芯片。在嵌入有硅基板上的穿透电极以及每个芯片的背面和侧面的电极嵌入通孔的内周面上形成二氧化硅（SiO）膜。

9. 发明专利

JP2010016116A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2010016116A
公开(公告)日：2010-01-21
申请号：JP2008173670
申请日：2008-07-02
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO
IPC分类号： H01L21/301 , B23K26/00 , B23K101/40
CPC分类号： H01L21/78
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which can form a deteriorated layer by radiating laser along a street and dividing it into individual devices even if there exists an electrode in such region on the back surface of a semiconductor substrate as corresponds to a device on the front surface. SOLUTION: The manufacturing method includes: a masking step in which an opening 41 is formed in a region corresponding to a device 22 formed on the front surface of a semiconductor substrate 20 and a mask member 4 for masking the region corresponding to a street 21 is pasted to the back surface of the semiconductor substrate; an electrode-forming step in which a metal layer is stacked on the back surface of the semiconductor substrate where the masking step was applied, to form an electrode in such region of the back surface of the semiconductor substrate as corresponds to the device; a mask member-peeling step of peeling a mask member pasted to the back surface of the semiconductor substrate; a deteriorated layer-forming step in which the laser beam that penetrates the semiconductor substrate is radiated along the street 21 to form a deteriorated layer inside the semiconductor substrate; and a dividing step of dividing the semiconductor substrate along the street by applying an external force to the semiconductor substrate. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，其可以通过沿着街道辐射激光而形成劣化层，并且将其分成各个器件，即使在背面的这种区域中存在电极半导体衬底对应于前表面上的器件。解决方案：制造方法包括：掩模步骤，其中开口41形成在与形成在半导体衬底20的前表面上的器件22相对应的区域中，掩模构件4用于掩蔽对应于街道21被粘贴到半导体衬底的背面; 电极形成步骤，其中在施加了掩模步骤的半导体衬底的背表面上层叠金属层，以在对应于该器件的半导体衬底的背面的区域中形成电极; 掩模构件剥离步骤，剥离粘贴到半导体衬底的背面的掩模构件; 劣化的层形成步骤，其中穿过半导体衬底的激光束沿着街道21辐射，以在半导体衬底内形成劣化层; 以及分割步骤，通过向半导体衬底施加外力来沿着街道划分半导体衬底。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009298650A Silicon recycle system 审中-公开
标题翻译：硅回收系统
公开(公告)号：JP2009298650A
公开(公告)日：2009-12-24
申请号：JP2008154988
申请日：2008-06-13
申请人： Disco Abrasive Syst Ltd , 株式会社ディスコ
发明人： ARAI KAZUNAO , HARADA SEISHI
IPC分类号： C01B33/02 , B09B3/00
摘要： PROBLEM TO BE SOLVED: To provide a silicon recycle system which can reutilize expensive silicon from waste liquid or scrap material in a semiconductor fabricating process.
SOLUTION: Disclosed is a silicon recycle system where the waste liquid or the scrap material produced by a working apparatus for grinding or cutting a silicon ingot or a silicon wafer is recovered, and silicon is recycled, and which include: a waste liquid-scrap material collection means collecting the waste liquid or the scrap material discharged from the working apparatus; a recovery means recovering the waste liquid or the scrap material collected by the waste liquid-scrap material collection means to a refining place; a refining means for refining the recovered waste liquid or the scrap material into refined silicon; and a silicon ingot production means producing a silicon ingot from the refined silicon refined by the refining means.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在半导体制造工艺中可以从废液或废料再利用昂贵的硅的硅再循环系统。解决方案：公开了一种硅再循环系统，其中回收用于研磨或切割硅锭或硅晶片的工作装置产生的废液或废料，并且回收硅，并且其包括：废液 - 收集装置收集从工作装置排出的废液或废料; 回收装置，将由废液废料收集装置收集的废液或废料回收到精炼处; 用于将回收废液或废料精炼成精制硅的精炼装置; 以及硅锭生产装置，由精炼装置精炼的精制硅生产硅锭。版权所有（C）2010，JPO＆INPIT

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