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    • 1. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2011238760A
    • 2011-11-24
    • JP2010108529
    • 2010-05-10
    • Denso Corp株式会社デンソー
    • SONE HIROKIYAMADA AKIRASAKAI TAKESHINAKANO TAKASHIKATADA MITSUTAKA
    • H01L27/08H01L21/762H01L21/822H01L21/8234H01L27/04H01L27/06H01L29/06
    • PROBLEM TO BE SOLVED: To prevent malfunction of a circuit due to a displacement current which charges or discharges a parasitic capacitor composed of an insulating film between a supporting substrate and an active layer by a dv/dt surge.SOLUTION: On the outer periphery of isolated semiconductor elements constituting a low potential reference circuit LV and a high potential reference circuit HV, an n-type guard ring 42c, and the like, are formed, and a deep n-type diffusion region 42b having the same conductivity type as that of the n-type guard ring buried layer 42c is formed on the buried insulating film 2b side of an active layer 2c. Furthermore, a p-type well 42d, and the like, are formed in an n-type layer 42a, and the like, composed of the active layer 2c, and a semiconductor element is formed in the p-type well 42d. Potentials of the n-type guard ring 42c, and the like, and the p-type well 42d, and the like, are fixed to become reverse bias or the same potential, respectively.
    • 要解决的问题:为了防止由于通过dv / dt浪涌而在支撑衬底和有源层之间由绝缘膜构成的寄生电容器充电或放电的位移电流来防止电路发生故障。 解决方案:在构成低电位参考电路LV和高电位参考电路HV的隔离半导体元件的外周上形成n型保护环42c等,并且形成深n型扩散 在有源层2c的埋入绝缘膜2b侧形成具有与n型保护环掩埋层42c相同的导电类型的区域42b。 此外,p型阱42d等形成在由有源层2c和半导体层构成的n型层42a中, 元件形成在p型阱42d中。 n型保护环42c等的电位和p型阱42d等的电位分别固定为反向偏压或相同的电位。 版权所有(C)2012,JPO&INPIT
    • 3. 发明专利
    • Composite compressor
    • 复合压缩机
    • JP2007032577A
    • 2007-02-08
    • JP2006298721
    • 2006-11-02
    • Denso CorpNippon Soken Inc株式会社デンソー株式会社日本自動車部品総合研究所
    • NAKAJIMA MASAFUMIKATO HIROYASUOGAWA HIROSHISAKAI TAKESHI
    • F04B35/01F04B35/00F04C29/00
    • PROBLEM TO BE SOLVED: To provide a composite compressor capable of harmonizing each characteristic of an engine, an electric motor part, and a compression mechanism mutually. SOLUTION: Driving force (rotation) of the electric motor part 130 is reduced by a gear shift mechanism 180 constituted by a planetary gear mechanism to transmit it to a ring gear 183 connected with a rotor 117 of the compression mechanism 110, and driving force (rotation) of a pulley is increased to transmit it to the ring gear 183. Consequently, discharge capacity V c of the compression mechanism 110 is increased without increasing size of the electric motor part 130, and the compression mechanism 110 can be operated while rotational speed n of the compression mechanism 110 is reduced. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供一种能够相互协调发动机,电动机部件和压缩机构的每个特性的复合压缩机。 解决方案:通过由行星齿轮机构构成的变速机构180将电动机部件130的驱动力(旋转)减小,将其传递到与压缩机构110的转子117连接的环形齿轮183,以及 滑轮的驱动力(旋转)增加以将其传递到环形齿轮183.因此,压缩机构110的放电容量V SB> SB>增加,而不增加电动机部件130的尺寸,并且 可以在压缩机构110的转速n减小的同时操作压缩机构110。 版权所有(C)2007,JPO&INPIT
    • 5. 发明专利
    • Heat pump hot water supply apparatus
    • 热泵热水设备
    • JP2004361046A
    • 2004-12-24
    • JP2003162325
    • 2003-06-06
    • Denso Corp株式会社デンソー
    • KAWAMURA SUSUMUSAKAI TAKESHIMURAYAMA MASATOIWASE AKIHIRO
    • F24H1/00F25B30/02
    • PROBLEM TO BE SOLVED: To provide a heat pump hot water supply apparatus, avoiding an operation stop due to an increase in high pressure side pressure of a compressor and surely securing the required hot water supply capability. SOLUTION: This heat pump hot water supply apparatus is provided with a temperature detection means 26 for detecting the high pressure side temperature T of a refrigerant in a heat pump cycle 2. A control means 100 controls the valve opening K of a pressure reducing device 23 or the refrigerant discharge capability of the compressor 21 so that the high pressure side temperature T obtained by the temperature detecting means 26 falls within a predetermined specified temperature range T2 to T1. Even if the valve opening K of the pressure reducing device 23 is opened to a specified opening K1, when the high pressure side temperature T exceeds the upper limit side T1 of the specified temperature range T2 to T1, the refrigerant discharge capability of the compressor 21 is controlled to be changed to decreasing. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种热泵热水供应装置,避免由于压缩机的高压侧压力的增加而导致的操作停止,并确保所需的热水供应能力。 解决方案:该热泵热水供给装置设置有用于检测热泵循环2中的制冷剂的高压侧温度T的温度检测装置26.控制装置100控制阀开度K的压力 减压装置23或压缩机21的制冷剂排出能力,使得由温度检测装置26获得的高压侧温度T落在预定的规定温度范围T2至T1内。 即使减压装置23的开阀K向规定的开度K1打开,当高压侧温度T超过规定温度范围T2〜T1的上限侧T1时,压缩机21的制冷剂排出能力 被控制改变为减少。 版权所有(C)2005,JPO&NCIPI
    • 7. 发明专利
    • Ejector system pressure reducing device
    • 喷射器系统减压装置
    • JP2004116807A
    • 2004-04-15
    • JP2002277363
    • 2002-09-24
    • Denso Corp株式会社デンソー
    • KAWAMURA SUSUMUSAKAI TAKESHIIWASE AKIHIRO
    • F25B1/00
    • F25B2341/0012F25B2400/23F25B2500/01
    • PROBLEM TO BE SOLVED: To provide a novel ejector system pressure reducing device improving ejector efficiency by smoothly making a refrigerant flow while restraining the occurrence of a loss such as a vortex loss. SOLUTION: An inner wall forming a passage in a nozzle 41 is composed of a smooth curved surface having no corner part. Particularly, a divergent part 41b is set so that a rate of change of the passage cross-sectional area to the flowing direction of the refrigerant becomes almost constant. A refrigerant passage reaching an outlet of a diffuser 43 from a mixing part 42 is also composed of a smooth curved surface having no corner part. At the same time, the diffuser 43 is expanded by setting the rate of change of the passage cross-sectional area almost constant, and an outer wall surface 41c of the nozzle 41 is formed in a curved surface shape recessed to the inside refrigerant passage side. Thus, since the refrigerant can be made to smoothly flow while restraining the occurrence of the loss, the ejector efficiency can be improved. COPYRIGHT: (C)2004,JPO
    • 要解决的问题:提供一种新颖的喷射器系统减压装置,通过平滑地制造制冷剂流动同时抑制诸如涡流损失的损失的发生来提高喷射器的效率。 解决方案:在喷嘴41中形成通道的内壁由没有角部的平滑曲面构成。 特别地,设置发散部41b,使得通道截面积相对于制冷剂的流动方向的变化率变得几乎恒定。 从混合部42到达扩散器43的出口的制冷剂通路也由没有角部的平滑曲面构成。 同时,通过使通道横截面积的变化率几乎恒定来扩散扩散器43,并且喷嘴41的外壁面41c形成为向内侧制冷剂通路侧凹入的曲面形状 。 因此,由于可以使制冷剂在抑制损失的发生的同时平稳地流动,所以能够提高喷射效率。 版权所有(C)2004,JPO
    • 9. 发明专利
    • Semiconductor device
    • 半导体器件
    • JP2014146833A
    • 2014-08-14
    • JP2014080239
    • 2014-04-09
    • Denso Corp株式会社デンソー
    • SONE HIROKIYAMADA AKIRASAKAI TAKESHINAKANO TAKASHIKATADA MITSUTAKA
    • H01L27/08H01L21/762H01L21/822H01L21/8234H01L27/04H01L27/06H01L29/06H01L29/861H01L29/868
    • PROBLEM TO BE SOLVED: To prevent malfunction of a circuit due to a displacement current which charges or discharges a parasitic capacitor composed of an insulating film between a supporting substrate and an active layer by a dv/dt surge.SOLUTION: On the outer periphery of isolated semiconductor elements constituting a low potential reference circuit LV and a high potential reference circuit HV, an n-type guard ring 42c, and the like, are formed, and a deep n-type diffusion region 42b having the same conductivity type as that of the n-type guard ring buried layer 42c is formed on the buried insulating film 2b side of an active layer 2c. Furthermore, a p-type well 42d, and the like, are formed in an n-type layer 42a, and the like, composed of the active layer 2c, and a semiconductor element is formed in the p-type well 42d. Potentials of the n-type guard ring 42c, and the like, and the p-type well 42d, and the like, are fixed to become reverse bias or the same potential, respectively.
    • 要解决的问题:为了防止由于由dv / dt浪涌在支撑衬底和有源层之间由绝缘膜构成的寄生电容器充电或放电的位移电流引起的电路的故障。解决方案:在外部 形成构成低电位参考电路LV和高电位参考电路HV,n型保护环42c等的隔离半导体元件,以及具有与n型保护环42c相同的导电类型的深n型扩散区42b n型保护环埋层42c形成在有源层2c的埋入绝缘膜2b侧。 此外,p型阱42d等形成在p型阱42d中形成的n型层42a等中,由有源层2c和半导体元件构成。 n型保护环42c等的电位和p型阱42d等的电位分别固定为反向偏压或相同的电位。