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1. 发明专利

JP2013079153A Method for producing carbon nanohorn, fluorinated carbon nanohorn and method for producing the same 有权
标题翻译：生产碳纳米管的方法，氟化碳纳米管及其制备方法
公开(公告)号：JP2013079153A
公开(公告)日：2013-05-02
申请号：JP2011218450
申请日：2011-09-30
申请人： Daikin Industries Ltd , ダイキン工業株式会社 , Nagoya Univ , 国立大学法人名古屋大学
发明人： ETO TOMOAKI , ISOGAI TOSHIHIRO , ITANO MITSUJI , IIJIMA SUMIO , YAMAGUCHI TAKASHI
IPC分类号： C01B31/02 , B82Y30/00 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing carbon nanohorn, which can store a large amount of fluorine gas whose emission rate is extremely high.SOLUTION: The method for producing carbon nanohorn includes a process (A) of installing carbon nanohorn in a reaction vessel and a process (B) of raising the temperature in the reaction vessel from a room temperature to 320°C or higher at a rate of 0.1-5.0°C/min while circulating a gas containing 1.0-100 mass% of oxygen.
摘要翻译：要解决的问题：提供一种生产碳纳米角的方法，其可以储存大量排放率非常高的氟气。解决方案：生产碳纳米角的方法包括在反应容器中安装碳纳米角的方法（A）和将反应容器中的温度从室温升至320℃或更高的方法（B）在含有1.0-100质量％的氧气的气体循环时，速率为0.1-5.0℃/分钟。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011202191A Method for forming conductive fluorocarbon thin film 有权
标题翻译：形成导电氟化薄膜的方法
公开(公告)号：JP2011202191A
公开(公告)日：2011-10-13
申请号：JP2010067653
申请日：2010-03-24
申请人： Daikin Industries Ltd , Taiyo Nippon Sanso Corp , ダイキン工業株式会社 , 大陽日酸株式会社
发明人： SUZUKI KATSUMASA , SHIBATA TOSHITADA , ISAKI RYUICHIRO , ITANO MITSUJI , NAKAMURA SHINGO
IPC分类号： C23C16/26
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a conductive fluorocarbon thin film using a raw material gas that can be easily decomposed and efficiently formed into a dense conductive fluorocarbon thin film having a high carbon ratio.SOLUTION: A conductive fluorocarbon film is deposited on a sample surface by exciting and decomposing a raw material gas in a vacuum plasma device, the raw material gas containing a compound expressed by general formula CxFyHz (wherein x represents 2 or 3, y represents an integer of 1 to 4 and z represents an integer of 1 to 5) and having a carbon-carbon double bond in the molecule. The pressure and temperature for exciting and decomposing the raw material gas are preferably controlled to the ranges from 1 to 133 Pa and from 15 to 100°C, respectively.
摘要翻译：要解决的问题：提供一种使用可以容易地分解并有效地形成为具有高碳比的致密导电性碳氟化合物薄膜的原料气体形成导电性碳氟化合物薄膜的方法。解决方案：沉积导电性碳氟化合物膜在真空等离子体装置中激发和分解原料气体的样品表面上，含有由通式CxFyHz表示的化合物的原料气体（其中x表示2或3，y表示1〜4的整数，z表示 1〜5的整数），在分子中具有碳 - 碳双键。用于激发和分解原料气体的压力和温度分别优选控制在1至133Pa和15至100℃的范围内。

3. 发明专利

JP2011086966A Dry etching gas and dry etching method 有权
标题翻译：干燥气体和干蚀刻方法
公开(公告)号：JP2011086966A
公开(公告)日：2011-04-28
申请号：JP2011018054
申请日：2011-01-31
申请人： Daikin Industries Ltd , ダイキン工業株式会社
发明人： HIROSE ZENKO , NAKAMURA SHINGO , ITANO MITSUJI , AOYAMA HIROICHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a dry etching gas and a dry etching method, capable of forming a contact hole with a high aspect ratio and etching a low dielectric constant film excellently.
SOLUTION: There are provided a method for etching a silicon oxide film and/or a silicon nitride film selectively to resist and silicon under a dry etching gas plasma (for example, an ICP discharge power of 200 to 3,000 W, a bias power of 50 to 2,000 W, and a pressure of 100 mTorr (13.3 Pa) or less), the dry etching gas plasma being formed by mixing, as required, CF
3 CF=CFCF=CF
2 and/or CF
2 =CFCF=CF
2 with at least one gas chosen from a group consisting of He, Ne, Ar, Xe, Kr, O
2 , CO, and CO
2 ; and a dry etching method for etching silicon group materials such as a low dielectric constant film or the like containing a silicon oxide film and/or silicon under a dry etching gas containing at least one compound expressed by a general formula (1) having two double bonds: CaFbHc (a=4 to 7, b=1 to 12, c=0 to 11, and b+c=2a-2), and the gas plasma.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够形成具有高纵横比的接触孔并且优异地蚀刻低介电常数膜的干蚀刻气体和干法蚀刻方法。解决方案：提供了一种用于在干蚀刻气体等离子体（例如，200至3,000W的ICP放电功率，偏置电压）下选择性地蚀刻氧化硅膜和/或氮化硅膜以抵抗硅的方法功率为50〜2000W，压力为100mTorr（13.3Pa）以下），干蚀刻气体等离子体通过根据需要混合形成CF 3 CF = CFCF = CF 2 和/或CF 2 = CFCF = CF 2 ，其中至少一种选自He，Ne，Ar，Xe，Kr ，CO 2和CO 2 ; 以及干蚀刻方法，用于在含有至少一种由通式（1）表示的化合物的干蚀刻气体中蚀刻含有氧化硅膜和/或硅的低介电常数薄膜等的硅基材料，键：CaFbHc（a = 4〜7，b = 1〜12，c = 0〜11，b + c = 2a-2）和气体等离子体。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2011044740A Dry etching gas, and dry etching method 有权
标题翻译：干燥气体和干蚀刻方法
公开(公告)号：JP2011044740A
公开(公告)日：2011-03-03
申请号：JP2010256142
申请日：2010-11-16
申请人： Daikin Industries Ltd , ダイキン工業株式会社
发明人： HIROSE ZENKO , NAKAMURA SHINGO , ITANO MITSUJI , AOYAMA HIROICHI
IPC分类号： H01L21/3065 , H01L21/28 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To form a contact hole having a high aspect ratio, and to suitably etch a low-permittivity film.
SOLUTION: This application provides a method for etching a silicon oxide film and/or silicon nitride film selectively to a resist and silicon by the use of dry etching gas plasma (e.g., with ICP discharge power of 200-3,000 W, bias power of 50-2,000 W and pressure of 100 mTorr (13.3 Pa) or lower) obtained by mixing CF
3 CF=CFCF=CF
2 and/or CF
2 =CFCF=CF
2 with at least one kind of gas selected from among a group consisting of He, Ne, Ar, Xe, Kr, O
2 , CO and CO
2 as required. This dry etching method is used for etching a silicon-based material, such as a silicon oxide and/or a low-permittivity film containing silicon by the use of a dry etching gas containing at least one compound expressed by formula (1): CaFbHc (where a=4 to 7, b=1 to 12, c=0 to 11 and b+c=2a-2), having two double bonds, and gas plasma.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：形成具有高纵横比的接触孔，并适当地蚀刻低电容率膜。解决方案：本申请提供了通过使用干蚀刻气体等离子体（例如，利用200-3,000W的ICP放电功率，偏置电压）来选择性地将氧化硅膜和/或氮化硅膜蚀刻到抗蚀剂和硅的方法 CF CF = CF SB 2和/或CF SB获得的压力为50-2000W，压力为100mTorr（13.3Pa）或更低）具有选自由He，Ne，Ar，Xe，Kr，O 2 组成的组中的至少一种气体的CFCF = CF 2 ，CO和CO 2 。该干蚀刻方法用于通过使用含有至少一种由式（1）表示的化合物的干蚀刻气体来蚀刻诸如氧化硅和/或含硅的低介电常数膜的硅基材料：CaFbHc （其中a = 4至7，b = 1至12，c = 0至11和b + c = 2a-2），具有两个双键和气体等离子体。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2009289774A Residual removing liquid after semiconductor dry process, and residual removing method using the same 审中-公开
标题翻译：半导体干燥工艺后的残留液体残留和使用其的残留去除方法
公开(公告)号：JP2009289774A
公开(公告)日：2009-12-10
申请号：JP2008137442
申请日：2008-05-27
申请人： Daikin Ind Ltd , ダイキン工業株式会社
发明人： NAKAMURA SHINGO , ITANO MITSUJI
IPC分类号： H01L21/304 , G03F7/42 , H01L21/027 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a residual removing liquid capable of effectively removing a residual after a dry process during a manufacturing process of a semiconductor device containing NiSi (nickel silicide).
SOLUTION: The removing liquid for the residual remaining after dry-etching and/or ashing a semiconductor substrate containing a nickel silicide (NiSi) contains: at least one kind of a fluoride salt selected from a group including an ammonium fluoride, an amine fluoride and a tetraalkyl ammonium fluoride; at least one kind of a salt other than the fluoride salt selected from a group including the ammonium salt other than the fluoride salt, the amine salt other than the fluoride salt and the tetraalkyl ammonium salt other than the fluoride salt; and water wherein a concentration of the fluoride salt is 5 wt.% or higher, a concentration of the salt other than the fluoride salt is 3 wt.% or higher, a total concentration of the tetraalkyl ammonium fluoride and the tetraalkyl ammonium salt other than the fluoride salt is lower than 15 wt.%, and pH is 7-9.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在含有NiSi（硅化镍）的半导体器件的制造过程中能够有效地去除干法之后的残留物的残留除去液。解决方案：干法蚀刻和/或灰化含有硅化镍（NiSi）的半导体衬底后剩余剩余物的去除液含有：至少一种选自氟化铵，氟化铵，氟化胺和四烷基氟化铵; 选自除了氟化物盐以外的铵盐，氟化物盐以外的胺盐和氟化物盐以外的四烷基铵盐的氟化物盐以外的盐中的至少一种以上的盐; 和氟化物盐的浓度为5重量％以上的水，氟化物盐以外的盐的浓度为3重量％以上，四烷基氟化铵和四烷基铵盐的总浓度除以下氟化物盐低于15重量％，pH为7-9。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2010067982A Etching solution 审中-公开
标题翻译：蚀刻解决方案
公开(公告)号：JP2010067982A
公开(公告)日：2010-03-25
申请号：JP2009208587
申请日：2009-09-09
申请人： Daikin Ind Ltd , Hynix Semiconductor Inc , ダイキン工業株式会社 , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： OH KEE JOON , KIM GYU HYUN , KIM JUNG NAM , HAN JI HYE , ITANO MITSUJI , WATANABE DAISUKE
IPC分类号： H01L21/306 , H01L21/308 , H01L21/3213 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide an etching solution that etches both a thermal oxide film and an SOD film at the same or the substantially same etching rate, while hardly etching a Poly-Si film, and more specifically, to provide an etching solution that exhibits an etching rate of 50 Å/min or lower at 23°C for both the thermal oxide film and the SOD film, exhibits an etching rate ratio of 1.25 or lower for the SOD film or the thermal oxide film, and attains an etching amount of 10 Å or smaller for a Poly-Si film while the thermal oxide film is etched as thick as 75 Å.
SOLUTION: The etching solution is composed of (1) 99 wt.% or more tripropylene glycol monomethyl ether for the total etching solution, (2) 0.4 wt.% or less water for the total etching solution, (3) hydrogen fluoride, and (4) one or two of amine selected from a group composed of hydroxylamine and ammonia.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供以相同或基本相同的蚀刻速率蚀刻热氧化膜和SOD膜的蚀刻溶液，同时几乎不蚀刻多晶硅膜，更具体地，提供一种对于热氧化膜和SOD膜，对于23℃的蚀刻速率为50 / min以下的蚀刻溶液，对于SOD膜或热氧化膜，蚀刻率比为1.25以下，达到对于多晶硅膜，当热氧化膜被蚀刻到厚度为75时，蚀刻量为10埃或更小。解决方案：蚀刻溶液由（1）99重量％或更多的三丙二醇单甲醚用于总蚀刻溶液，（2）0.4重量％或更少的水用于总蚀刻溶液，（3）氢氟化物，和（4）一种或两种选自羟胺和氨的胺。版权所有（C）2010，JPO＆INPIT

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