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    • 1. 发明专利
    • Crosslinked fluorine-containing elastomer fine particle, method for producing the same, and composition
    • 交联含荧光体的弹性体微粒,其制造方法和组合物
    • JP2013064159A
    • 2013-04-11
    • JP2013003469
    • 2013-01-11
    • Daikin Industries Ltdダイキン工業株式会社
    • NAKAGAWA HIDETOMORI HARUHIKOAOYAMA HIROICHITERADA JUNPEIKAWABE RUMI
    • C08F214/18C08L27/12
    • C08J3/12C08J3/24C08J2327/12C08L2205/02C08L2205/22Y10T428/2982C08L27/18C08L27/16
    • PROBLEM TO BE SOLVED: To provide: a novel crosslinked fluorine-containing elastomer fine particle; a method for producing the crosslinked fluorine-containing elastomer fine particle; and a resin composition containing the crosslinked fluorine-containing elastomer fine particle.SOLUTION: This invention relates to: the crosslinked fluorine-containing elastomer fine particle having a gel fraction of not less than 85 mass%; or the crosslinked fluorine-containing elastomer fine particle obtained by crosslinking a fluorine-containing elastomer particle having at least three iodine atoms per one polymer molecule at an end thereof. This invention further relates to: a composition containing such the crosslinked fluorine-containing elastomer fine particle and a synthetic resin; and a method for producing a crosslinked fluorine-containing elastomer fine particle, which is characterized in that an aqueous dispersion containing a peroxide-crosslinkable fluorine-containing elastomer particle, a peroxide and a polyfunctional unsaturated compound is heated, thus peroxide-crosslinking the fluorine-containing elastomer particle.
    • 待解决的问题:提供:新型交联的含氟弹性体微粒; 交联的含氟弹性体微粒的制造方法; 和含有交联的含氟弹性体微粒的树脂组合物。 本发明涉及凝胶分数为85质量%以上的交联含氟弹性体微粒子。 或通过在其一端交联每个聚合物分子中具有至少三个碘原子的含氟弹性体颗粒而获得的交联的含氟弹性体微粒。 本发明还涉及含有这种交联的含氟弹性体微粒和合成树脂的组合物; 以及交联的含氟弹性体微粒的制造方法,其特征在于,加热含有过氧化物交联性含氟弹性体粒子,过氧化物和多官能不饱和化合物的水分散体, 含弹性体颗粒。 版权所有(C)2013,JPO&INPIT
    • 2. 发明专利
    • Dry etching gas and dry etching method
    • 干燥气体和干蚀刻方法
    • JP2011086966A
    • 2011-04-28
    • JP2011018054
    • 2011-01-31
    • Daikin Industries Ltdダイキン工業株式会社
    • HIROSE ZENKONAKAMURA SHINGOITANO MITSUJIAOYAMA HIROICHI
    • H01L21/3065
    • PROBLEM TO BE SOLVED: To provide a dry etching gas and a dry etching method, capable of forming a contact hole with a high aspect ratio and etching a low dielectric constant film excellently.
      SOLUTION: There are provided a method for etching a silicon oxide film and/or a silicon nitride film selectively to resist and silicon under a dry etching gas plasma (for example, an ICP discharge power of 200 to 3,000 W, a bias power of 50 to 2,000 W, and a pressure of 100 mTorr (13.3 Pa) or less), the dry etching gas plasma being formed by mixing, as required, CF
      3 CF=CFCF=CF
      2 and/or CF
      2 =CFCF=CF
      2 with at least one gas chosen from a group consisting of He, Ne, Ar, Xe, Kr, O
      2 , CO, and CO
      2 ; and a dry etching method for etching silicon group materials such as a low dielectric constant film or the like containing a silicon oxide film and/or silicon under a dry etching gas containing at least one compound expressed by a general formula (1) having two double bonds: CaFbHc (a=4 to 7, b=1 to 12, c=0 to 11, and b+c=2a-2), and the gas plasma.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供能够形成具有高纵横比的接触孔并且优异地蚀刻低介电常数膜的干蚀刻气体和干法蚀刻方法。 解决方案:提供了一种用于在干蚀刻气体等离子体(例如,200至3,000W的ICP放电功率,偏置电压)下选择性地蚀刻氧化硅膜和/或氮化硅膜以抵抗硅的方法 功率为50〜2000W,压力为100mTorr(13.3Pa)以下),干蚀刻气体等离子体通过根据需要混合形成CF 3 CF = CFCF = CF 2 和/或CF 2 = CFCF = CF 2 ,其中至少一种选自He,Ne,Ar,Xe,Kr ,CO 2和CO 2 ; 以及干蚀刻方法,用于在含有至少一种由通式(1)表示的化合物的干蚀刻气体中蚀刻含有氧化硅膜和/或硅的低介电常数薄膜等的硅基材料, 键:CaFbHc(a = 4〜7,b = 1〜12,c = 0〜11,b + c = 2a-2)和气体等离子体。 版权所有(C)2011,JPO&INPIT
    • 3. 发明专利
    • Dry etching gas, and dry etching method
    • 干燥气体和干蚀刻方法
    • JP2011044740A
    • 2011-03-03
    • JP2010256142
    • 2010-11-16
    • Daikin Industries Ltdダイキン工業株式会社
    • HIROSE ZENKONAKAMURA SHINGOITANO MITSUJIAOYAMA HIROICHI
    • H01L21/3065H01L21/28H01L21/768
    • PROBLEM TO BE SOLVED: To form a contact hole having a high aspect ratio, and to suitably etch a low-permittivity film.
      SOLUTION: This application provides a method for etching a silicon oxide film and/or silicon nitride film selectively to a resist and silicon by the use of dry etching gas plasma (e.g., with ICP discharge power of 200-3,000 W, bias power of 50-2,000 W and pressure of 100 mTorr (13.3 Pa) or lower) obtained by mixing CF
      3 CF=CFCF=CF
      2 and/or CF
      2 =CFCF=CF
      2 with at least one kind of gas selected from among a group consisting of He, Ne, Ar, Xe, Kr, O
      2 , CO and CO
      2 as required. This dry etching method is used for etching a silicon-based material, such as a silicon oxide and/or a low-permittivity film containing silicon by the use of a dry etching gas containing at least one compound expressed by formula (1): CaFbHc (where a=4 to 7, b=1 to 12, c=0 to 11 and b+c=2a-2), having two double bonds, and gas plasma.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:形成具有高纵横比的接触孔,并适当地蚀刻低电容率膜。 解决方案:本申请提供了通过使用干蚀刻气体等离子体(例如,利用200-3,000W的ICP放电功率,偏置电压)来选择性地将氧化硅膜和/或氮化硅膜蚀刻到抗蚀剂和硅的方法 CF CF = CF SB 2和/或CF SB获得的压力为50-2000W,压力为100mTorr(13.3Pa)或更低) 具有选自由He,Ne,Ar,Xe,Kr,O 2 组成的组中的至少一种气体的CFCF = CF 2 ,CO和CO 2 。 该干蚀刻方法用于通过使用含有至少一种由式(1)表示的化合物的干蚀刻气体来蚀刻诸如氧化硅和/或含硅的低介电常数膜的硅基材料:CaFbHc (其中a = 4至7,b = 1至12,c = 0至11和b + c = 2a-2),具有两个双键和气体等离子体。 版权所有(C)2011,JPO&INPIT