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1. 发明专利

JP2000044393A PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2000044393A
公开(公告)日：2000-02-15
申请号：JP22109998
申请日：1998-07-21
申请人： DENSO CORP , TOYOTA CENTRAL RES & DEV
发明人： ONDA SHOICHI , ONODA TAKASHI , OKAMOTO ATSUHITO , SUGIYAMA NAOHIRO
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To obtain a silicon carbide single crystal with reduced defects by clogging the micro-pipe defects distributing inside the substrate of silicon carbide single crystal. SOLUTION: A silicon carbide substrate as a raw material, particularly a silicon carbide single crystal substrate 2 and silicon carbide substrates 1a and 1b different in its crystalline form from that of the single crystal substrate 2 are arranged so that it may come into contact with both faces of the single crystal substrate having the micro-tube defects and they are heat-treated in a crucible 6. Thus, the silicon carbide vapor is vaporized and re-crystallized in the microtube defects whereby the defects of micro-pipes are clogged 3.

2. 发明专利

JPH11278985A Production of single crystal 失效
标题翻译：单晶生产
公开(公告)号：JPH11278985A
公开(公告)日：1999-10-12
申请号：JP9856898
申请日：1998-03-26
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： OKAMOTO ATSUHITO , SUGIYAMA NAOHIRO , TANI TOSHIHIKO , KAMIYA NOBUO , ONDA SHOICHI
IPC分类号： C30B23/00 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a single crystal, capable of obtaining the single crystal having reduced defects by disposing at least one low temperature region on a seed crystal-growing surface in the early period of the single crystal growth to control the production of the growth nucleus in the early period of the single crystal growth and subsequently uniforming the temperature distribution of the growth surface in the middle and last periods of the single crystal growth. SOLUTION: A reaction vessel comprises a graphite crucible 1 and a graphite lid 2. Silicon Carbide raw material powder 3 is disposed in the graphite crucible 1, and a seed crystal 4 is disposed on the graphite lid 2 further used as a seed crystal-loading portion. A bored portion 6 is disposed in the graphite lid 2 to locally cool the seed crystal growth surface. The growth of the seed crystal 4 is carried out by controlling the temperature of a graphite heat generation resister and the pressure of an inert gas, etc. A place near to the bored portion 6 is cooled in comparison with its peripheral portion by the radiation of heat. It is thereby forecast that the growth density of the grown nucleus is enhanced in the central portion of the seed crystal 4. The peripheral portion of the seed crystal 4 is governed by a step flow growth mechanism. The obtained single crystal ingot is formed on one crystal surface.
摘要翻译：要解决的问题：提供一种单晶的制造方法，其能够通过在单晶生长的早期阶段中在晶种生长面上配置至少一个低温区域来获得具有降低的缺陷的单晶，从而进行控制在单晶生长初期生长生长核，随后在单晶生长的中期和最后阶段均匀化生长表面的温度分布。解决方案：反应容器包括石墨坩埚1和石墨盖2.碳化硅原料粉末3设置在石墨坩埚1中，并且晶种4设置在进一步用作晶种负载的石墨盖2上一部分。钻石部分6设置在石墨盖2中以局部冷却晶种生长表面。晶种4的生长通过控制石墨发热电极的温度和惰性气体等的压力来进行。靠近钻孔部分6的位置与其周边部分相比通过辐射热。由此预测在晶种4的中心部分生长的核的生长密度增强。晶种4的周边部分由步进流动生长机制控制。所得单晶锭形成在一个晶体表面上。

3. 发明专利

JP2000044398A PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL OBTAINED THEREBY 失效
公开(公告)号：JP2000044398A
公开(公告)日：2000-02-15
申请号：JP14068099
申请日：1999-05-20
申请人： TOYOTA CENTRAL RES & DEV , DENSO CORP
发明人： OKAMOTO ATSUHITO , SUGIYAMA NAOHIRO , TANI TOSHIHIKO , KAMIYA NOBUO , HARA KAZUTO , ONDA SHOICHI , HIROSE FUSAO , HARA KUNIHIKO
IPC分类号： C30B29/36 , C30B23/00 , C30B31/06
摘要： PROBLEM TO BE SOLVED: To block the micro pipe defects in the silicon carbide single crystal substrate but not to block the micro pipe defects in a new growth layer. SOLUTION: At least one of the micro pipe defects opened on the surface of a substrate crystal (namely silicon carbide single crystal) is coated with a coating material 5. The coated single crystal is heat-treated so that the inside of the micro pipe defect may be saturated with silicon carbide vapor. Thus, the micro pipe defect 6 in the substrate crystal 1 can be blocked inside the substrate crystal, not in the growing layer that newly grows on the substrate crystal.

4. 发明专利

JPH11126870A HEAT SINK WITH INTEGRATED FIN AND PRODUCTION THEREOF 失效
公开(公告)号：JPH11126870A
公开(公告)日：1999-05-11
申请号：JP28893897
申请日：1997-10-21
申请人： DENSO CORP , TOYOTA CENTRAL RES & DEV
发明人： YAMAMOTO TAKESHI , ONDA SHOICHI , NISHINO NAOHISA , HOJO HIROSHI
IPC分类号： B22D19/14 , H01L23/373 , H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To provide a heat sink with integrated fins having high fin strength, superior in heat dissipation properties and requiring no bonding between the heat sink and the fins. SOLUTION: Fins 11 are integrally formed of the same metal-based composite material as a heat sink 1 therewith, thus obtaining a hat sink 1 integrated with fins 11 in strength and heat dissipation properties. Since the fin 11 has a complicated shape, the heat sink 1 cannot be formed simply of a steel case normally used for casting. A molding case made of sodium chloride is thereby employed as a die at a part for forming the fin 11. The heat sink 1 is taken out from the steel case along with the molding case after casting, and then the molding case is removed using a solvent, e.g., water. According to the method, a heat sink 1 integrated with fins 11 can be produced easily because of high solubility and decayable property of sodium chloride.

5. 发明专利

JPH10259440A COMPOSITE MATERIAL 失效
公开(公告)号：JPH10259440A
公开(公告)日：1998-09-29
申请号：JP8768897
申请日：1997-03-21
申请人： TOYOTA CENTRAL RES & DEV , DENSO CORP
发明人： TOWATA SHINICHI , NISHINO NAOHISA , KAMIYA NOBUO , HOJO HIROSHI , ONDA SHOICHI
IPC分类号： C22C1/10 , C22C21/00 , C22C21/02
摘要： PROBLEM TO BE SOLVED: To obtain a lightweight composite material for electronic parts having a low thermal expansion coefficient and also having high thermal conductivity by adding a specified amt. of Cu to a composite material composed of an aluminum material and SiC particles. SOLUTION: This composite material is composed of an aluminum material, SiC particles and Cu. The amt. of Cu to be added is regulated to

6. 发明专利

JP2002362998A METHOD AND DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2002362998A
公开(公告)日：2002-12-18
申请号：JP2001171587
申请日：2001-06-06
申请人： TOYOTA CENTRAL RES & DEV , DENSO CORP
发明人： SUGIYAMA NAOHIRO , NAKAMURA DAISUKE , ONDA SHOICHI , MATSUI MASAKI
IPC分类号： C30B29/36 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for producing a silicon carbide single crystal, by which deposition of the silicon carbide single crystal at inappropriate places other than the growth end surface of the growing crystal can be suppressed, and the growth of the growing crystal for a long time is possible, and a manufacturing device for the silicon carbide single crystal. SOLUTION: A pedestal 3 for supporting a substrate crystal 7 formed from a silicon carbide single crystal is placed in a reaction vessel 2 having a cylindrical peripheral wall 20. The silicon carbide single crystal is grown on the substrate crystal 7 by supplying a silicon containing gas 81, a carbon containing gas 82 and a carrier gas 83 toward the substrate crystal 7 supported by the pedestal 3, and at the same time, the excess silicon containing gas 81, the excess carbon containing gas 82 and the exess carrier gas 83 are discharged through between the pedestal 3 and the peripheral wall 20. An etching gas of etching silicon carbide is introduced to the neighborhood of the periphery of the interface 37 of the substrate crystal 7 and the pedestal 3 and the neighborhood of the periphery of growing end surface 750 of growing crystal 75 of the silicon carbide single crystal grown on the substrate crystal 7.

7. 发明专利

JP2001114598A METHOD OF AND DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2001114598A
公开(公告)日：2001-04-24
申请号：JP29446899
申请日：1999-10-15
申请人： DENSO CORP , TOYOTA CENTRAL RES & DEV
发明人： HARA KAZUTO , FUTATSUYAMA KOKI , ONDA SHOICHI , HIROSE FUSAO , OGURI HIDEMI , SUGIYAMA NAOHIRO
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal by which the silicon carbide single crystal can be grow in a large length in a state flatly maintaining the growth surface of the single crystal without generating crack detects. SOLUTION: A graphite-made crucible 1 whose lid 11 comprises a seed crystal- adhering member 12 and a polycrystal growth member 13 surrounding the periphery of the projected portion 12a of the seed crystal-adhering member 12 is prepared. A seed crystal 3 is adhered to the surface 12b of the projected portion 12a, and silicon carbide raw material 2 is allowed to sublime, thus supplying the silicon carbide raw material gas to the growth surface of the seed crystal 3. Thereby, the silicon carbide single crystal 4 grows, and a polycrystal 6 simultaneously grows in the same height as the silicon carbide single crystal 4 on the surface 13c of the polycrystal growth member 13. When the silicon carbide single crystal 4 thus grows in such the state as embedded in the polycrystal 6, the temperature distribution of the growth surface of the silicon carbide single crystal 4 is approximately uniformed, and the silicon carbide single crystal can be grown in a long length in a state flatly maintaining the growth surface of the single crystal without generating crack detects.

8. 发明专利

JP2002234800A METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2002234800A
公开(公告)日：2002-08-23
申请号：JP2001030477
申请日：2001-02-07
申请人： DENSO CORP
发明人： OGURI HIDEMI , HIROSE FUSAO , KUNO HIRONARI , NAGAKUBO MASAO , ONDA SHOICHI
IPC分类号： C30B29/36 , C30B23/00 , H01L21/203 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To prevent the generation of strains caused by compression or enlargement in a growing SiC single crystal and the formation of different kinds of polymorphisms and to obtain a high quality and low resistivity SiC single crystal. SOLUTION: When a silicon carbide single crystal substrate 3 being a seed crystal and a powdery silicon carbide raw material 5 are disposed in a graphite vessel 1, arsenic or an arsenic compound 6 is added to the powdery silicon carbide raw material 5. Thereby, a gaseous mixture composed of a gaseous raw material 5a, generated by heating the powdery silicon carbide raw material 5 so as to sublimate, and a gas 6a containing arsenic or the arsenic compound is supplied onto the silicon carbide single crystal substrate 3. Thereby, the silicon carbide single crystal 4a containing arsenic is grown. The incorporated arsenic controls the resistivity of the silicon carbide single crystal 4a as n-type dopant and does not compress the crystal or enlarge the crystal because arsenic has the same atomic radius as that of silicon, and thereby strain in the crystal hardly occurs. Accordingly, the formation of different kinds of polymorphisms can be suppressed and a high quality silicon carbide single crystal having a desired resistivity can be obtained.

9. 发明专利

JP2002154898A METHOD AND APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2002154898A
公开(公告)日：2002-05-28
申请号：JP2000343663
申请日：2000-11-10
申请人： DENSO CORP
发明人： HARA KAZUTO , NAGAKUBO MASAO , ONDA SHOICHI
IPC分类号： C30B29/36 , C30B25/00 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a silicon carbide single crystal, by which the yield of the silicon carbide single crystal can be improved. SOLUTION: A crucible 30 constituted of a first member 31 and a second cylindrical member 36 is arranged in a lower vessel 2. A pedestal 33 is arranged at the inner side of the first member 31, and a seed crystal 34 is attached to the pedestal 33. Further, when the SiC single crystal is formed on the seed crystal 34 by introducing a gaseous mixture into the crucible 30 through an introducing piping 50, the conductance at the time of introducing the gaseous mixture into the crucible 30 is made larger than that at the time of discharging the gaseous mixture and the pressure of the gaseous mixture in a growing chamber 35 is made higher than that of the gaseous mixture after being discharged from the crucible 30.

10. 发明专利

JP2001226198A METHOD AND DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2001226198A
公开(公告)日：2001-08-21
申请号：JP2000041426
申请日：2000-02-15
申请人： DENSO CORP
发明人： KONDO HIROYUKI , FUTATSUYAMA KOKI , HIROSE FUSAO , ONDA SHOICHI
IPC分类号： G01N23/10 , C30B23/00 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To surely produce a high quality, long size SiC single crystal by providing such a condition that the state of the sublimation of an SiC raw material is kept constant. SOLUTION: In the SiC single crystal production process where an SiC raw material powder 2 and an SiC single crystal substrate 3 being a seed crystal are arranged in a graphite crucible 1 and the SiC raw material powder 2 is heated and subliminated to grow an SiC single crystal 4 on the SiC single crystal substrate 3, the SiC raw material powder 2 is irradiated with X-ray 8 an X-ray generator 6 installed at the outside of the graphite crucible 1 and the X-ray transmitted the SiC raw material powder 2 is detected by an X-ray detector 7. Then, the decreased amount of the SiC raw material powder 2 is monitored by the transmitted amount of the X-ray 8 and the temperature in the graphite crucible 1 is controlled so that the decreasing amount of the SiC raw material powder 2 becomes constant. Thereby, it becomes possible to stabilize the ratio of silicon to carbon in the graphic crucible 1, and the high quality and long size SiC single crystal 4 is surely obtained.

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