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1. 发明专利

JP2001226199A METHOD AND DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2001226199A
公开(公告)日：2001-08-21
申请号：JP2000046795
申请日：2000-02-18
申请人： DENSO CORP
发明人： OGURI HIDEMI , HIROSE FUSAO , KONDO HIROYUKI
IPC分类号： C30B29/36 , C30B23/00 , H01L21/203 , H01L33/00 , H01L33/34 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To suppress the fluctuation of Si/C ratio in a sublimation gas without previously forming silicon carbide polycrystal or coating with tantalum carbide and to produce a high quality single crystal nearly free from detects by preventing the intake of impurities contained in graphite fine particles or a graphite vessel. SOLUTION: A flow-in port is formed by providing a gap S2 between a crucible body 1a and a raw material vessel 1b, and a flow-out port is formed by providing a gap S1 between the crucible body 1a and a cap material 1b so that a gas 5 flows from the flow-in port to the flow-out port when an SiC single crystal 4 is grown. Thereby, a layer 5a of gas fluid is formed due to the gas 5 and the inner surface of the graphic crucible 1 is covered with the layer 5a of the gas fluid.

2. 发明专利

JP2003137697A METHOD AND APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 审中-公开
公开(公告)号：JP2003137697A
公开(公告)日：2003-05-14
申请号：JP2001331440
申请日：2001-10-29
申请人： DENSO CORP
发明人： OGURI HIDEMI , HARA KAZUTO , NAGAKUBO MASAO
IPC分类号： C30B29/36 , C30B25/14
摘要： PROBLEM TO BE SOLVED: To efficiently produce a single crystal by actively supplying a gaseous raw material onto the surface of a seed crystal. SOLUTION: A silicon carbide single crystal is grown from a silicon carbide single crystal substrate 10 being a seed crystal by arranging the silicon carbide single crystal substrate 10 being the seed crystal in a crucible 4 and introducing a mixed gas of a gas containing Si and a gas containing C from a mixed gas introducing tube 13. The mixed gas is put in a turbulent state at the outlet part of the inside of the mixed gas introducing tube 13 by providing an inner pipe 15 at the inner circumferential part of the outlet part of the inside of the mixed gas introducing tube 13.

3. 发明专利

JP2002201097A METHOD AND APPARATUS OF MANUFACTURING SILICON CARBIDE, SUBSTRATE FOR SILICON CARBIDE SINGLE CRYSTAL GROWING AND METHOD OF HEAT TREATMENT OF SINGLE CRYSTAL 失效
公开(公告)号：JP2002201097A
公开(公告)日：2002-07-16
申请号：JP2000401550
申请日：2000-12-28
申请人： DENSO CORP , TOYOTA CENTRAL RES & DEV
发明人： KONDO HIROYUKI , HIROSE FUSAO , OGURI HIDEMI , NAKAMURA DAISUKE , OKAMOTO ATSUHITO , SUGIYAMA NAOHIRO
IPC分类号： C30B29/36 , C30B23/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing SiC single crystal of high quality, and long sized by suppressing generation of macro defects surely. SOLUTION: SiC raw material powder 2 and SiC seed crystal 3 are arranged in a graphite crucible to heat sublimate the powder 2 to grow SiC single crystal 4, at this time, on the rear surface of the seed crystal a protective layer 5 is provided, and the SiC seed crystal is mechanically held by a holding part 1d disposed in the crucible 1 not by adhesive, and SiC single crystal 4 is made to be grown on the surface of SiC seed crystal 3. The generation of macro defects can be suppressed by removing the local temperature distribution on the rear face of seed crystal and suppressing the breakage of protection layer 5.

4. 发明专利

JP2004311649A Method and apparatus for manufacturing silicon carbide single crystal 有权
公开(公告)号：JP2004311649A
公开(公告)日：2004-11-04
申请号：JP2003102016
申请日：2003-04-04
申请人： Denso Corp , 株式会社デンソー
发明人： SUGIYAMA NAOHIRO , KITO YASUO , OGURI HIDEMI , HARA KAZUTO , FUTATSUYAMA KOKI , OKAMOTO ATSUHITO
IPC分类号： C30B25/14 , C30B29/36 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a silicon carbide single crystal, which can perform a crystal growth efficiently and steadily.
SOLUTION: A silicon carbide single crystal substrate 13 to become a seed crystal is disposed in a reaction container 11. A raw material gas containing a gas which contains an Si and a gas which contains a C is introduced into the reaction container 11, and the silicon carbide single crystal 21 is thereby grown from the substrate 13. Then, heaters (15, 16, 17 and 20) heat the raw material gas to the substrate 13 so as to become higher than the temperature at the substrate 13. The reaction container 11 again returns the raw material gas which does not contribute to the growth after the crystal growth on the substrate 13 from the substrate 13 to an upstream side by using the heated raw material gas. A carbon heat insulation material (absorption material) 12 absorbs the raw material gas after the returned raw material gas is again heated by the heaters (15, 16, 17 and 20).
COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2003002795A Method and apparatus for producing silicon carbide single crystal 有权
标题翻译：生产碳化硅单晶的方法和装置
公开(公告)号：JP2003002795A
公开(公告)日：2003-01-08
申请号：JP2001190218
申请日：2001-06-22
申请人： Denso Corp , Toyota Central Res & Dev Lab Inc , 株式会社デンソー , 株式会社豊田中央研究所
发明人： OKAMOTO ATSUHITO , NAKAMURA DAISUKE , OGURI HIDEMI , FUTATSUYAMA KOKI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for producing a silicon carbide single crystal, by which the high quality silicon carbide single crystal can be continuously produced for a long time.
SOLUTION: The method for producing the silicon carbide single crystal comprises arranging a seed crystal 6 of the silicon carbide single crystal in a reaction vessel 10, and growing a crystal 7 of the silicon carbide single crystal on the initial surface 60 of the seed crystal 6 by introducing a gaseous mixture 8 comprising a silicon-containing gas containing Si and a carbon-containing gas containing C into the reaction vessel 10. When the gaseous mixture 8 is introduced into the reaction vessel 10, at least one of the molar ratio and the flow rate of the gaseous mixture 8 is independently controlled for each gas flow passage 31, 32 by using a gas introducing pipe 2 having multiple gas flow passages 31, 32.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于生产碳化硅单晶的方法和设备，通过该方法和设备可以长时间连续生产高质量的碳化硅单晶。解决方案：制造碳化硅单晶的方法包括将碳化硅单晶晶种6布置在反应容器10中，并在晶种6的初始表面60上生长碳化硅单晶的晶体7 通过将包含含Si的含硅气体和含有C的含碳气体的气体混合物8引入反应容器10中。当将气态混合物8引入反应容器10中时，摩尔比和通过使用具有多个气体流动通道31,32的气体导入管2，对于每个气体流路31,32独立地控制气体混合物8的流量。

6. 发明专利

JP2001114598A METHOD OF AND DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2001114598A
公开(公告)日：2001-04-24
申请号：JP29446899
申请日：1999-10-15
申请人： DENSO CORP , TOYOTA CENTRAL RES & DEV
发明人： HARA KAZUTO , FUTATSUYAMA KOKI , ONDA SHOICHI , HIROSE FUSAO , OGURI HIDEMI , SUGIYAMA NAOHIRO
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal by which the silicon carbide single crystal can be grow in a large length in a state flatly maintaining the growth surface of the single crystal without generating crack detects. SOLUTION: A graphite-made crucible 1 whose lid 11 comprises a seed crystal- adhering member 12 and a polycrystal growth member 13 surrounding the periphery of the projected portion 12a of the seed crystal-adhering member 12 is prepared. A seed crystal 3 is adhered to the surface 12b of the projected portion 12a, and silicon carbide raw material 2 is allowed to sublime, thus supplying the silicon carbide raw material gas to the growth surface of the seed crystal 3. Thereby, the silicon carbide single crystal 4 grows, and a polycrystal 6 simultaneously grows in the same height as the silicon carbide single crystal 4 on the surface 13c of the polycrystal growth member 13. When the silicon carbide single crystal 4 thus grows in such the state as embedded in the polycrystal 6, the temperature distribution of the growth surface of the silicon carbide single crystal 4 is approximately uniformed, and the silicon carbide single crystal can be grown in a long length in a state flatly maintaining the growth surface of the single crystal without generating crack detects.

7. 发明专利

JP2002234800A METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2002234800A
公开(公告)日：2002-08-23
申请号：JP2001030477
申请日：2001-02-07
申请人： DENSO CORP
发明人： OGURI HIDEMI , HIROSE FUSAO , KUNO HIRONARI , NAGAKUBO MASAO , ONDA SHOICHI
IPC分类号： C30B29/36 , C30B23/00 , H01L21/203 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To prevent the generation of strains caused by compression or enlargement in a growing SiC single crystal and the formation of different kinds of polymorphisms and to obtain a high quality and low resistivity SiC single crystal. SOLUTION: When a silicon carbide single crystal substrate 3 being a seed crystal and a powdery silicon carbide raw material 5 are disposed in a graphite vessel 1, arsenic or an arsenic compound 6 is added to the powdery silicon carbide raw material 5. Thereby, a gaseous mixture composed of a gaseous raw material 5a, generated by heating the powdery silicon carbide raw material 5 so as to sublimate, and a gas 6a containing arsenic or the arsenic compound is supplied onto the silicon carbide single crystal substrate 3. Thereby, the silicon carbide single crystal 4a containing arsenic is grown. The incorporated arsenic controls the resistivity of the silicon carbide single crystal 4a as n-type dopant and does not compress the crystal or enlarge the crystal because arsenic has the same atomic radius as that of silicon, and thereby strain in the crystal hardly occurs. Accordingly, the formation of different kinds of polymorphisms can be suppressed and a high quality silicon carbide single crystal having a desired resistivity can be obtained.

8. 发明专利

JP2001226197A METHOD AND DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2001226197A
公开(公告)日：2001-08-21
申请号：JP2000046792
申请日：2000-02-18
申请人： DENSO CORP
发明人： FUTATSUYAMA KOKI , OGURI HIDEMI , HARA KAZUTO , ONDA SHOICHI
IPC分类号： C30B29/36 , H01L33/34
摘要： PROBLEM TO BE SOLVED: To grow an SiC single crystal uniform in the longitudinal and radial directions by preventing the deterioration of the side surface of a growing crystal, which deterioration is caused by relative movement of the growing crystal. SOLUTION: A state that the outer periphery of an SiC single crystal 5 is surrounded with a guide 6 having a diameter slightly larger than the diameter of the SiC single crystal 5 is provided. Then, the SiC single crystal 5 is pulled together with a seed crystal supporting tool 2 in the reverse direction to the growth direction according to the growth of the SiC single crystal 5 so that the surface of the SiC single crystal 5 becomes nearly same plane with the surface 6a of the guide 6. Thus, by surrounding the SiC single crystal 5 with the guide 6 having slightly lager diameter than the crystal 5, it becomes possible to prevent the carbonization of the side surface of the SiC single crystal 5, where the growth condition is changed by pulling, and to prevent sticking of polycrystal to the side surface. Thereby the good SiC single crystal 5 can be obtained.

9. 发明专利

JP2001192299A METHOD AND DEVICE FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2001192299A
公开(公告)日：2001-07-17
申请号：JP2000005958
申请日：2000-01-07
申请人： DENSO CORP
发明人： FUTATSUYAMA KOKI , HARA KAZUTO , ONDA SHOICHI , OGURI HIDEMI
IPC分类号： C30B29/36
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a silicon carbide single crystal, which is able to stabilize hourly fluctuations of gaseous raw materials to be supplied. SOLUTION: In a method of producing a silicon carbide single crystal, which comprises transporting a Si-containing gas and a C-containing gas to a SiC seed crystal 3 and growing the SiC single crystal on the SiC seed crystal 3 in a crucible 1, a Si-raw material 4 being a source for supplying the Si- containing gas and a C-raw material 5 being a source for supplying the C- containing gas are separately arranged, and the Si-containing gas evaporated from the Si-raw material 4 is brought into contact with the C-raw material 5 and then the gas thus treated is supplied to the SiC seed crystal 3. Thus, it becomes possible to stably supply C to the SiC seed crystal 3 by using the Si-raw material and the C-raw material and stably evaporating the Si-containing gas from the Si-raw material 4 at growing time, because the evaporated Si- containing gas reacts with carbon at the surface of the C-raw material 5 to form Si2C and SiC2. Accordingly, the hourly fluctuations of the gaseous raw materials to be supplied can be stabilized.

10. 发明专利

JP2000264795A APPARATUS AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2000264795A
公开(公告)日：2000-09-26
申请号：JP7829299
申请日：1999-03-23
申请人： DENSO CORP
发明人： OGURI HIDEMI , HIROSE FUSAO
IPC分类号： C30B23/00 , C30B29/36
摘要： PROBLEM TO BE SOLVED: To flatten the growing surface by making radiant heat from a flat plate uniform. SOLUTION: Growing of a silicon carbide single crystal is carried out by laminatedly arranging plural shielding plates 5a having a flat surface part of a diameter at least not less than that of a silicon carbide single crystal substrate 3, between the silicon carbide single crystal substrate 3 and a silicon carbide powdery raw material 4 so that the growing surface of the silicon carbide single crystal substrate 3 opposes to the flat surface part. Thus, in the case that the plural shield plates 5a are arranged between the silicon carbide single crystal substrate 3 and the silicon carbide powdery raw material 4, the temp. at the upper surface of the shield plate 5a, which is arranged at the nearest side to the silicon carbide single crystal substrate 3, among plural shield plates 5a, is made almost uniform by each heat radiation of the plural shield plates 5a. Thus, the growing surface of silicon carbide single crystal 10 can be flattened.

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