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1. 发明专利

JP2010073876A Silicon wafer 审中-公开
标题翻译：硅胶
公开(公告)号：JP2010073876A
公开(公告)日：2010-04-02
申请号：JP2008239434
申请日：2008-09-18
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： WATANABE TAKASHI , SENSAI KOJI , ISOGAI HIROMICHI , TOYODA EIJI
IPC分类号： H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer which maintains high strength by allowing the control of an oxygen concentration profile with a margin in a distance from a surface when being laminated, and can suppress the generation of an oxygen donor during a device manufacturing process.
SOLUTION: In the silicon wafer, an oxygen concentration curve f(x) representing the oxygen concentration profile satisfies formulas (1) and (2) wherein x
1 is a first distance being a distance from a surface layer of the silicon wafer to the deepest portion of a first layer having the lowest first oxygen concentration a, and x
3 is a second distance being a distance from the surface layer of the silicon wafer to the shallowest portion of a second layer having the highest second oxygen concentration b.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过在层叠时允许从表面距离保持一定距离的氧浓度分布来保持高强度的硅晶片，并且可以抑制在一个设备制造过程。解决方案：在硅晶片中，表示氧浓度分布的氧浓度曲线f（x）满足公式（1）和（2），其中x 1 是距离硅晶片的表面层到具有最低的第一氧浓度a的第一层的最深部分，并且x SB 3是从硅晶片的表面层到第二层的距离的第二距离具有最高第二氧浓度的第二层的最浅部分b。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009231430A Silicon wafer 有权
标题翻译：硅胶
公开(公告)号：JP2009231430A
公开(公告)日：2009-10-08
申请号：JP2008073260
申请日：2008-03-21
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： WATANABE TAKASHI , TAKEDA RYUJI
IPC分类号： H01L21/322 , C30B29/06 , C30B33/02
CPC分类号： H01L21/3225 , C30B25/20 , C30B29/06 , C30B31/06 , C30B33/02 , C30B33/04 , H01L21/3221
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer having high-quality crystallinity and high stress-resisitance property of the surface layer part which serves as a device active region. SOLUTION: DZ layers 12a, 12b are formed on the surface and the rear surface of a silicon wafer 11 through a heat treatment of an appropriate temperature rise process; temperature retaining process; and temperature drop process under atmosphere for reducing gas, such as, hydrogen, inert gas, such as, argon. Furthermore, a gettering site 13, comprising BMD, or the like, is provided in the bulk part farther inside than the DZ layer. A silicon epitaxial layer 22 is formed on the surface of the silicon wafer 21. Additionally, solid solution oxygen 14, with its concentration and distribution regulation controlled, is introduced in the surface layer part of the DZ layer 12 and the silicon epitaxial layer 22. Introduction of oxygen to the surface layer is, preferably, conducted by the process of a rapid temperature drop continuing from the heat treatment in the oxygen-containing gas. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供作为器件活性区域的表面层部分具有高质量结晶度和高应力 - 电阻特性的硅晶片。解决方案：通过适当的升温过程的热处理，在硅晶片11的表面和后表面上形成DZ层12a，12b; 保温过程; 并在气氛下进行降温处理，用于还原气体，如氢气，惰性气体如氩气。此外，包含BMD等的吸气部位13设置在比DZ层更靠内部的主体部分中。在硅晶片21的表面上形成硅外延层22.此外，其浓度和分布调节受控的固溶氧14被引入DZ层12和硅外延层22的表层部分。优选通过从含氧气体中的热处理开始的快速温度降低的过程来进行向表层的引入。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2007305968A Silicon wafer, method of manufacturing the same, and silicon wafer for semiconductor device 审中-公开
标题翻译：硅晶片，其制造方法和半导体器件的硅晶片
公开(公告)号：JP2007305968A
公开(公告)日：2007-11-22
申请号：JP2007046603
申请日：2007-02-27
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： WATANABE TAKASHI , SAITO HIROYUKI , SENDA TAKESHI , SENSAI KOJI , KASHIMA KAZUHIKO
IPC分类号： H01L21/322 , H01L21/26
CPC分类号： C30B29/06 , C30B33/02 , H01L21/3225
摘要： PROBLEM TO BE SOLVED: To provide a highly strong silicon wafer and a method of manufacturing the same which prevents a crack or deformation caused by heat treatment having a temperature difference between the front side and the back side by defining the size and density of an oxide precipitate (BMD) on a surface of the wafer.
SOLUTION: The silicon wafer having a diameter of 10 nm or larger and a BMD density of 1×10
8 /cm
3 or lower is used in a region from the surface to a depth of 50 μm. The silicon wafer is obtained by heat treatment at 1,000°C to 1,200°C in a gaseous atmosphere containing at least one of hydrogen and argon.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种高强度的硅晶片及其制造方法，其通过限定尺寸和密度来防止由具有前侧和后侧之间的温度差的热处理引起的裂纹或变形的晶片表面上的氧化物沉淀物（BMD）。解决方案：将直径为10nm以上，BMD密度为1×10 8 / cm 3 / SP> 3以上的硅晶片用于表面深度为50μm。通过在含有氢和氩中的至少一种的气氛中在1,000℃〜1200℃下进行热处理而获得硅晶片。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2012216750A Semiconductor device manufacturing method and semiconductor substrate used therefor 审中-公开
标题翻译：半导体器件制造方法及其半导体基板
公开(公告)号：JP2012216750A
公开(公告)日：2012-11-08
申请号：JP2011212163
申请日：2011-09-28
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： WATANABE TAKASHI
IPC分类号： H01L27/14 , H01L21/304 , H01L27/146
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor substrate used therefor, which can achieve thinning of a semiconductor substrate efficiently without leaving an end point detection part after manufacturing the semiconductor device and without causing any problem such as spreading of a material different from that of the semiconductor substrate to a semiconductor element part.SOLUTION: A semiconductor device manufacturing method of the present invention comprises at least a process of forming a trench structure 5 having a plurality of recesses 3 on a surface 1a of a semiconductor substrate 1, and a process of forming a semiconductor layer 3a on surface parts of the plurality of recesses 3 by performing heating treatment on the semiconductor substrate 1 with the trench structure 5 on which the trench structure 5 is formed, in an inert gas atmosphere or in a reductive gas atmosphere to block the surface parts of the plurality of recesses 3, to form a cavity 3b inside.
摘要翻译：要解决的问题：为了提供一种半导体器件制造方法和使用该半导体器件的半导体衬底，其能够在制造半导体器件之后有效地实现半导体衬底的薄化而不留下终点检测部分，并且不会引起任何问题，例如将不同于半导体衬底的材料的材料铺展到半导体元件部分。解决方案：本发明的半导体器件制造方法至少包括在半导体衬底1的表面1a上形成具有多个凹槽3的沟槽结构5的工艺和形成半导体层3a的工艺在多个凹部3的表面部分上，通过在其上形成有沟槽结构5的沟槽结构5在半导体衬底1上进行加热处理，在惰性气体气氛或还原性气体气氛中阻挡表面部分多个凹部3，以在内部形成空腔3b。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2009231429A Method of manufacturing silicon wafer 审中-公开
标题翻译：制造硅波的方法
公开(公告)号：JP2009231429A
公开(公告)日：2009-10-08
申请号：JP2008073259
申请日：2008-03-21
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： TAKEDA RYUJI , WATANABE TAKASHI
IPC分类号： H01L21/322 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a silicon wafer in which a surface layer part to be a device active region has high quality crystallinity and high stress resistance. SOLUTION: In the step of a step S1, an anneal wafer or a silicon epitaxial wafer is produced. An initial silicon wafer used for the production is manufactured from a single crystal silicon ingot pulled and grown by a CZ (Czockralski) method for instance, and an inter-grating oxygen concentration [Oi] within a crystal is 1.0 to 1.8×10 18 atoms/cm 3 for instance. Then, in the step of the next step S2, by applying isothermal annealing to the wafer in an oxygen-containing gas atmosphere then applying rapid heat reduction thereto, solid solution oxygen is injected to the surface layer part of the DZ (Denuded Zone) layer or silicon epitaxial layer of the wafer, and the concentration is adjusted. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种硅晶片，其中作为器件活性区域的表面层部分具有高质量的结晶度和高的耐应力性。解决方案：在步骤S1的步骤中，制造退火晶片或硅外延晶片。用于生产的初始硅晶片由例如通过CZ（Czockralski）方法拉伸和生长的单晶硅锭制造，晶体内的光栅间氧化物浓度is为1.0至1.8×10 18 原子/ cm 3 / SP>。然后，在下一步骤S2的步骤中，通过在含氧气体气氛中对晶片进行等温退火，然后对其进行快速热还原，将固溶氧气注入到DZ（剥离区）层的表层部分或硅外延层，调整浓度。版权所有（C）2010，JPO＆INPIT

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