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1. 发明专利

JP2009173503A Single crystal pulling device and method for manufacturing single crystal 有权
标题翻译：单晶拉丝装置和制造单晶的方法
公开(公告)号：JP2009173503A
公开(公告)日：2009-08-06
申请号：JP2008016257
申请日：2008-01-28
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： HISAICHI TOSHIO
IPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a method for reducing carbon concentration in a single crystal and preventing occurrence of dislocation even when a single crystal to be grown has a large diameter.
SOLUTION: A single crystal pulling device is disclosed, which has a radiation shield 6 disposed above a crucible 3 and shielding a single crystal C against radiation heat, gas supply means 13, 14, 17 supplying an inert gas G from above the radiation shield 6 into the crucible 3, and discharge means 18, 19 discharging the inert gas G passing through the crucible 3 to the outside of a furnace 2. The radiation shield 6 is placed in such a manner that a gap area between the outer circumference of the shield 6 and the inner circumference of the crucible 3 at the nearest portion ranges from 10% to less than 35% of the liquid surface area of a melt M and that a gap dimension between the lower end of the radiation shield 6 and the melt liquid surface is smaller than the width dimension in a radial direction of the lower end face of the radiation shield 6. The inert gas G supplied to the crucible 3 by the gas supply means 13, 14, 17 is discharged by the discharge means 18, 19 via the gap formed by the placement of the radiation shield 6.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种降低单晶中的碳浓度的方法，即使当待生长的单晶具有大直径时也能防止发生位错。解决方案：公开了一种单晶拉制装置，其具有设置在坩埚3上方并且遮蔽单晶C以抵抗辐射热的辐射屏蔽6，气体供应装置13,14,17从上方提供惰性气体G 辐射屏蔽6进入坩埚3，以及排出装置18,19将通过坩埚3的惰性气体G排放到炉子2的外部。辐射屏蔽体6以这样的方式放置，使得外周并且最近部分的坩埚3的内周的范围在熔体M的液面积的10％至小于35％之间，并且辐射屏蔽6的下端和熔融液体表面小于辐射屏蔽6的下端面的径向宽度尺寸。由气体供给装置13,14,17供应到坩埚3的惰性气体G通过排出装置18排出，19通过差距通过辐射屏蔽6的放置。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2009227509A Method for pulling up single crystal 有权
标题翻译：拉伸单晶的方法
公开(公告)号：JP2009227509A
公开(公告)日：2009-10-08
申请号：JP2008073729
申请日：2008-03-21
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： HISAICHI TOSHIO
IPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a method for pulling up a single crystal by the Czochralski method capable of reducing the dislocation generation of a single crystal resulting from a neck by making a neck part shape capable of reproducibly attaining the optimum values of the neck part length and the average range of fluctuation at this neck part.
SOLUTION: The method includes a step S2 of contacting a seed crystal with the surface of silicon melt in a crucible and ascertaining the optimum melt surface temperature for growth start of a shrunk diameter part of the neck by the width of protruded crystal habit striae of meniscus, a step S3 of growing where a throttling part to reduce the diameter to form a nearly reverse conical shape by correcting the deviation of a diameter set value which is based on a substantially reverse conical shape from contact to the silicon melt of the seed crystal to a necking start size by growing the velocity and electricity supplied to a heater for heating the silicon melt, and a step S4 of modifying the deviation of the diameter set value within the range of 200-400 mm of the neck length by growing velocity and electricity supplied to the heater for heating the silicon melt.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决方案：提供一种通过切克劳斯基法提取单晶的方法，该方法能够通过使颈部形状能够可再现地达到最佳值，从而减少由颈部产生的单晶的位错产生颈部长度和颈部的平均波动范围。解决方案：该方法包括将晶种与坩埚中的硅熔体表面接触的步骤S2，并确定颈部收缩直径部分的生长开始的最佳熔体表面温度以突出晶体习惯的宽度弯液面的条纹，生长的步骤S3，其中通过校正基于基本上相反的圆锥形状的直径设定值的偏差来减小直径以形成几乎倒圆锥形的节流部分，从而接触到硅熔体通过生长提供给用于加热硅熔体的加热器的速度和电力使籽晶成为颈缩起始尺寸;以及步骤S4，通过生长来改变直径设定值在颈部长度的200-400mm范围内的偏差提供给加热器以加热硅熔体的速度和电力。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2008069055A Method of manufacturing silicon single crystal 审中-公开
标题翻译：制造硅单晶的方法
公开(公告)号：JP2008069055A
公开(公告)日：2008-03-27
申请号：JP2006250439
申请日：2006-09-15
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： HISAICHI TOSHIO
IPC分类号： C30B29/06 , C30B15/04
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing silicon single crystal which can reduce the manufacturing cost and can improve the productivity of carbon-doped silicon single crystal by using a carbon dopant that melts at a lower temperature and does not spring and jump up.
SOLUTION: The method of manufacturing silicon single crystal is a method of manufacturing a carbon-doped silicon single crystal by Czochralski (CZ) process, and it is characterized in that it comprises a step for supplying a silicon raw material and a dopant for silicon containing at least carbon into a crucible and a step for melting the silicon raw material and the dopant to a raw material melt, and in that the carbon content in the dopant is at least 0.2 atom% and not more than 1.0 atom% against the total of the silicon content and the carbon content in the dopant.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造硅单晶的方法，其可以降低制造成本，并且可以通过使用在较低温度下熔融并且不弹性的碳掺杂剂来提高碳掺杂硅单晶的生产率并跳起来。解决方案：制造硅单晶的方法是通过Czochralski（CZ）工艺制造碳掺杂硅单晶的方法，其特征在于它包括供给硅原料和掺杂剂的步骤对于将至少含有碳的硅进入坩埚，以及将硅原料和掺杂剂熔解成原料熔融物的步骤，并且掺杂剂中的碳含量为至少0.2原子％且不大于1.0原子％，相对于掺杂剂中硅含量和碳含量的总和。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008308347A Method for pulling single crystal 有权
标题翻译：拉伸单晶的方法
公开(公告)号：JP2008308347A
公开(公告)日：2008-12-25
申请号：JP2007155270
申请日：2007-06-12
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： HISAICHI TOSHIO
IPC分类号： C30B15/20 , C30B15/30
摘要： PROBLEM TO BE SOLVED: To provide a method for pulling a single crystal which is capable of automatically aligning precisely a crystal axis and a crucible axis, suppressing swinging of a growing single crystal and manufacturing a single crystal with high productivity.
SOLUTION: In a method for pulling a single crystal using the Czochralski method, at least when the crown or the straight trunk portion of a single crystal is grown, axis-centering to settle the centering position of the crystal is done in applying a magnetic field to a raw material solution and swinging is settled by transferring a wire in a horizontal plane in case swinging of the wire occurs up to a predetermined amplitude or more in growing the single crystal. As a method for adjusting axis centers, the position of the wire 12 is detected by a laser sensor 14 and the crucible axis center information memorized in a RAM beforehand and the wire axis center (crystal axis center) information are compared and the crystal axis center and the crucible axis center are aligned by moving the XY table of a XY table system 10 equipped with a center aligning function through a controller 16 by a servomechanism in case the crystal axis center is off the crucible axis center.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种能够精确地对晶轴和坩埚轴进行精确对准的拉伸单晶的方法，抑制生长中的单晶的摆动并以高的生产率制造单晶。解决方案：在使用Czochralski方法拉制单晶的方法中，至少当单晶的冠状或直的躯干部分生长时，在施加晶体的轴心定心以沉降晶体的定心位置时进行在生长单晶的情况下，在线的摆动发生直到预定的振幅以上的情况下，通过在水平面中传送线来稳定原料溶液的磁场和摆动。作为调整轴心的方法，通过激光传感器14检测线12的位置，预先存储在RAM中的坩埚轴中心信息，并将线轴中心（晶轴中心）信息与晶轴中心并且当晶轴中心离开坩埚轴心时，通过伺服机构通过控制器16移动具有中心对准功能的XY工作台系统10的XY工作台来对准坩埚轴心。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008297186A Crucible handling device and crucible replacing method 有权
标题翻译：可操作处理装置和可更换替代方法
公开(公告)号：JP2008297186A
公开(公告)日：2008-12-11
申请号：JP2007147736
申请日：2007-06-04
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： HISAICHI TOSHIO
IPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a crucible handling device for mounting a crucible on a single crystal pulling apparatus after being moved in the vicinity of the apparatus or demounting the crucible, with which the time from after pulling of a single crystal up to the start of subsequent pulling of a single crystal can be shortened and the production efficiency can be improved while suppressing cost increase; and to provide a crucible replacing method.
SOLUTION: The crucible handling device 19 is used for mounting a crucible 3 on a single crystal pulling apparatus after being moved in the vicinity of the apparatus or demounting the crucible 3. The crucible handling device 19 is equipped with a base pedestal 21 which is freely attached to the pulling apparatus or detached from the apparatus, and grip members 22 which are provided freely turnably to the base pedestal 21 and so as to grip a crucible 3. In each grip member 22, a carbon fiber-reinforced carbon composite material 23 is provided on a part being brought into contact with the crucible 3.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种坩埚处理装置，用于将坩埚安装在单晶拉制装置上，在装置附近移动或拆卸坩埚后，从单晶拉出之后的时间可以缩短单个晶体的随后拉动的开始，并且可以在抑制成本增加的同时提高生产效率; 并提供坩埚替换方法。解决方案：坩埚处理装置19用于在装置附近移动或拆卸坩埚3之后将坩埚3安装在单晶拉制装置上。坩埚处理装置19装备有基座21 其自由地附接到拉拔装置或与装置分离，以及可自由转动地设置到基座21并且夹持坩埚3的抓握构件22.在每个抓握构件22中，碳纤维增强碳复合材料材料23设置在与坩埚3接触的部分上。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2009057232A Silicon single crystal growing method and its apparatus 审中-公开
标题翻译：硅晶单晶生长方法及其设备
公开(公告)号：JP2009057232A
公开(公告)日：2009-03-19
申请号：JP2007225013
申请日：2007-08-31
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： HISAICHI TOSHIO
IPC分类号： C30B29/06 , C30B15/22
摘要： PROBLEM TO BE SOLVED: To simply suppress solidification of silicon easily generated from the inner wall of a quartz crucible in pull-up growing of a silicon single crystal by MCZ method using a cusp magnetic field.
SOLUTION: A silicon melt 12 is formed in a quartz crucible 13 with a main chamber interior 11 of a silicon single crystal growing apparatus 10 put in an inert gas atmosphere. A cusp magnetic field is generated by electromagnetic coils 20, 21 and the magnetic field is applied perpendicularly to the side wall surface and the bottom surface of the quartz crucible 13, while after a seed crystal 26 attached to a seed chuck 27 is contacted with the silicon melt 12, a pull-up shaft 25 is pulled up at a prescribed speed. The quartz crucible 13 is rotated in varied speeds by adding a periodical pulsating increase/decrease to a standard rotation speed by a rotation/up and down-driving device 23 to rotate and up/down-drive a support shaft 22. A driving control section 24 controls the speed-varied rotation operation of the rotation/up and down-driving device 23.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过使用尖点磁场的MCZ方法，通过硅单晶的上拉生长，简单地抑制从石英坩埚的内壁容易产生的硅的固化。解决方案：在硅单晶生长装置10的主室内部11放置在惰性气体气氛中的石英坩埚13中形成硅熔体12。尖角磁场由电磁线圈20,21产生，并且垂直于石英坩埚13的侧壁表面和底表面施加磁场，同时在连接到种子卡盘27的晶种26与硅熔体12，上拉轴25以规定的速度被拉起。石英坩埚13通过旋转/上下驱动装置23将标准旋转速度的周期性脉动增加/减小加以旋转和上/下驱动支撑轴22，以不同的速度旋转。驱动控制部分 24控制旋转/上下驱动装置23的速度变化的旋转操作。版权所有：（C）2009，JPO＆INPIT

7. 发明专利

JP2008189524A Method for pulling single crystal 有权
标题翻译：拉伸单晶的方法
公开(公告)号：JP2008189524A
公开(公告)日：2008-08-21
申请号：JP2007026260
申请日：2007-02-06
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： HISAICHI TOSHIO
IPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a method for pulling a single crystal by which, when pulling a large diameter single crystal, a neck part formed in the single crystal can be prevented from being broken and the propagation of heat shock dislocation from a seed crystal to the straight body part can be prevented.
SOLUTION: When a plurality of diameter-enlarged parts 21 where the diameter of the neck part P1 is enlarged and diameter-reduced parts 22b where the diameter of the neck part P1 is reduced are formed in the neck part P1 by alternately forming the plurality of diameter-enlarged parts 21 and diameter-reduced parts 22, wherein each diameter-reduced part 22 is formed so that the minimum diameter in each diameter-reduced part 22 becomes a set value within the range of 4.0-6.0 mm, the variation width in the diameter difference between the maximum diameter d1 of each diameter-enlarged part 21 and the minimum diameter d2 of each diameter-reduced part 22 is controlled to be within the range of 0.5-2.0 mm, and the length dimension 1 of the neck part P1 is set to be within the range of 200-400 mm.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决问题的方案：提供一种拉伸单晶的方法，其中当拉大直径单晶时，可以防止形成在单晶中的颈部被破坏，并且热冲击位错的传播从可以防止到直体部分的晶种。解决方案：当颈部P1的直径扩大的多个直径扩大部分21和颈部P1的直径减小的直径减小部分22b通过交替地形成在颈部P1中多个直径扩大部分21和直径减小部分22，其中每个直径减小部分22形成为使得每个直径减小部分22中的最小直径成为4.0-6.0mm范围内的设定值，每个直径增大部分21的最大直径d1和每个直径减小部分22的最小直径d2之间的直径差的变化宽度被控制在0.5-2.0mm的范围内，并且颈部P1设定在200〜400mm的范围内。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2010100474A Method for optimizing horizontal magnetic field in pulling-up silicon single crystal, and method for manufacturing silicon single crystal 审中-公开
标题翻译：用于优化水晶磁场的方法，用于制造硅单晶，以及制造硅单晶的方法
公开(公告)号：JP2010100474A
公开(公告)日：2010-05-06
申请号：JP2008272732
申请日：2008-10-23
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： FU SHINRIN , HISAICHI TOSHIO
IPC分类号： C30B29/06 , C30B15/22
CPC分类号： C30B29/06 , C30B15/305
摘要： PROBLEM TO BE SOLVED: To provide a method for optimizing a horizontal magnetic field in pulling up a silicon single crystal, which enables a suitable setting of a magnetic field in a silicon melt, and a method for manufacturing a silicon single crystal.
SOLUTION: In suitable setting of a magnetic field applied to a silicon melt 12 stored in a bottomed cylindrical quartz crucible 11, the maximum value of a magnetic flux density of a horizontal magnetic field generated by a pair of exciting coils 13, 14 is denoted as B
0 on a vertical symmetrical axis 17 as a cylinder axis of the quartz crucible 11. The minimum value of the magnetic flux density is denoted as B
min , and the maximum value thereof is denoted as B
max , respectively, on a circumference where a horizontal symmetry plane 18 orthogonally traversing the vertical symmetrical axis 17 on which the magnetic flux density is B
0 intersects the inner diameter of the quartz crucible 11. These magnetic flux densities B
0 , B
min and B
max are each made in a predetermined range, thereby suitably controlling the ascending flow and the temperature of the silicon melt 12 below the solid-liquid interface 15a.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于优化提升硅单晶的水平磁场的方法，其能够适当地设定硅熔体中的磁场，以及制造硅单晶的方法。解决方案：在适用于施加到存储在有底圆柱形石英坩埚11中的硅熔体12上的磁场的设置中，由一对励磁线圈13,14产生的水平磁场的磁通密度的最大值在作为石英坩埚11的气缸轴的垂直对称轴17上表示为B 0 。磁通密度的最小值表示为B min ，并且其最大值分别表示为在垂直对称轴线17上正交地穿过其中磁通密度为B 0 max >与石英坩埚11的内径相交。这些磁通密度B 0 ，B min 和B max 分别制成预定的从而适当地控制固体 - 液体界面15a下方的硅熔体12的上升流和温度。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009126738A Method for manufacturing silicon single crystal 审中-公开
标题翻译：制造硅单晶的方法
公开(公告)号：JP2009126738A
公开(公告)日：2009-06-11
申请号：JP2007302593
申请日：2007-11-22
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： HISAICHI TOSHIO
IPC分类号： C30B29/06 , C30B15/20
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon single crystal where stable operation can be performed by preventing the occurrence of dislocation at the tail part of the silicon single crystal even when the manufacturing time of the silicon single crystal becomes long and a quartz crucible is easily deteriorated.
SOLUTION: In the forming of the tail part which is the end of the pulling up and growing of the silicon single crystal, the residual amount Y of a silicon molten liquid is a specified amount or more until the used time of the quartz crucible, which is an integrated time from the formation of the silicon molten liquid, reaches a specified time p not relating to the used time. After reaching the specified time p, a required residual amount Y is increased with the used time of the quartz crucible and satisfies the equation denoted as Y≥aX+b-ap and then the occurrence of the dislocation in the formation of the tail part of the silicon single crystal can be stably prevented.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种制造硅单晶的方法，其中即使当硅单晶的制造时间变为（例如）时，也可以通过防止硅单晶的尾部发生位错而进行稳定的操作长且石英坩埚易于劣化。解决方案：在形成作为硅单晶拉伸和生长结束的尾部的部分中，硅熔融液体的剩余量Y是规定量以上，直到石英的使用时间坩埚是从形成硅熔融液体的整体时间达到与使用时间无关的规定时间p。达到规定时间p后，所需残留量Y随着石英坩埚的使用时间而增加，满足表示为Y≥aX+ b-ap的方程，然后在形成尾部的位置发生位错可以稳定地防止硅单晶。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2008189525A Single crystal pulling apparatus 有权
标题翻译：单晶拉丝装置
公开(公告)号：JP2008189525A
公开(公告)日：2008-08-21
申请号：JP2007026261
申请日：2007-02-06
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： HISAICHI TOSHIO
IPC分类号： C30B29/06 , C30B15/30
CPC分类号： C30B15/305 , C30B15/14 , C30B29/06 , Y10S117/90 , Y10T117/10 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072
摘要： PROBLEM TO BE SOLVED: To provide a single crystal pulling apparatus for pulling a single crystal from a crucible by a Czochralski method while applying a magnetic field to a silicon melt in the crucible, the apparatus easily providing a silicon single crystal containing oxygen in high concentration. SOLUTION: The single crystal pulling apparatus is equipped with: a heater 4 which has a cylindrical heat generating part 4a surrounding the periphery of he crucible 3 in a furnace body and melts raw material silicon M by heat radiation of the heat generating part 4a; and an electric magnet 13 which is provided so as to surround the periphery of the furnace body and applies a horizontal magnetic field to a silicon melt M in the crucible 3, wherein the length dimension h in the pulling axis direction of the heat generating part 4a of the heater 4 is set to be 0.5-0.9 times of the inner diameter of the crucible 3, a first central position in the pulling axis direction of the heat generating part 4a of the heater 4 is arranged below a second central position in the pulling axis direction of the electric magnet 13, and the distance difference d between the first and second central positions is set to be 0.15-0.55 times of the inner diameter R of the crucible 3. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种单晶拉制装置，用于通过切克劳斯基法从坩埚拉取单晶，同时向坩埚中的硅熔体施加磁场，该装置容易提供含有氧的硅单晶高浓度。解决方案：单晶拉制装置配备有加热器4，该加热器4具有围绕炉体内的坩埚3的周边的圆筒形发热部4a，并且通过发热部的热辐射使原料硅M熔融图4a; 以及电磁体13，其被设置为围绕炉体的周围，并且对坩埚3中的硅熔体M施加水平磁场，其中，发热部4a的牵引轴方向的长度尺寸h 加热器4的发热量设定为坩埚3的内径的0.5〜0.9倍，加热器4的发热部4a的牵引轴方向的第一中心位置配置在拉拔的第二中心位置的下方电磁体13的轴线方向和第一和第二中心位置之间的距离差d被设定为坩埚3的内径R的0.15〜0.55倍。（C）2008，JPO＆INPIT

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