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1. 发明专利

JP2013107788A Method for manufacturing silicon carbide wafer, silicon carbide wafer, silicon carbide semiconductor element, and power converting device 有权
标题翻译：制造硅碳化硅，碳化硅陶瓷，碳化硅半导体元件和功率转换器件的方法
公开(公告)号：JP2013107788A
公开(公告)日：2013-06-06
申请号：JP2011253283
申请日：2011-11-18
申请人： Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所 , Kansai Electric Power Co Inc:The , 関西電力株式会社
发明人： NAGANO MASAHIRO , TSUCHIDA SHUICHI , NAKAYAMA KOJI , ASANO KATSUNORI
IPC分类号： C30B29/36 , C30B25/20
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide wafer which prevents complication of a manufacture process, does not restrict a silicon carbide substrate, and is capable of more surely converting a basal plane dislocation (BPD) to a threading edge dislocation (TED).SOLUTION: This method includes the first step in which Si ion is injected into one direction of a silicon carbide substrate 1 or the substrate 1 is irradiated with an electron beam, the second step in which the silicon carbide substrate 1 is subjected to annealing, and the third step in which one direction side of the silicon carbide substrate 1 is epitaxially grown to form an epitaxial film 3. The ion to be injected into the silicon carbide substrate is at least one kind selected from a group comprising Si ion, C ion, H ion, He ion, P ion, Al ion B ion and N ion.
摘要翻译：要解决的问题：为了提供一种防止制造工艺的复杂化的碳化硅晶片的制造方法，不限制碳化硅衬底，并且能够更可靠地将基面位错（BPD）转换为穿线边缘错位（TED）。解决方案：该方法包括将Si离子注入到碳化硅衬底1的一个方向或者将衬底1照射电子束的第一步骤，其中碳化硅衬底1经受第二步骤退火，以及第三步骤，其中外延生长碳化硅衬底1的一个方向侧以形成外延膜3.要注入到碳化硅衬底中的离子是选自由以下组成的组中的至少一种：Si离子， C离子，H离子，He离子，P离子，Al离子B离子和N离子。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2014169944A Method for inspecting silicon carbide substrate or silicon carbide semiconductor element, and method for manufacturing silicon carbide substrate or silicon carbide semiconductor element 有权
标题翻译：用于检查碳化硅衬底或碳化硅半导体元件的方法，以及用于制造碳化硅衬底或碳化硅半导体元件的方法
公开(公告)号：JP2014169944A
公开(公告)日：2014-09-18
申请号：JP2013042354
申请日：2013-03-04
申请人： Central Research Institute Of Electric Power Industry , 一般財団法人電力中央研究所
发明人： NAGANO MASAHIRO , TSUCHIDA SHUICHI , KAMATA ISAO
IPC分类号： G01N21/64 , C30B29/36 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for inspecting a silicon carbide substrate or a silicon carbide semiconductor element capable of identifying defects in an easy and non-destructive manner, and to provide a method for manufacturing a silicon carbide substrate or a silicon carbide semiconductor element with improved performances.SOLUTION: The inspection method includes: irradiating an object 1 to be inspected, which is a silicon carbide substrate or a silicon carbide semiconductor element, with laser; receiving fluorescent light radiated from the object 1 to be inspected, by the laser; forming an image indicating a light emitting state of the object 1 to be inspected; and identifying a direction of Burgers vector of threading edge dislocations (TED) existing in the object 1 to be inspected on the basis of the image. In addition, by analyzing distortions and stresses generated by the Burgers vector, a manufacturing condition is identified so as to suppress the distortions and stresses. Thus, the silicon carbide substrate or the silicon carbide semiconductor element is manufactured under the manufacturing condition.
摘要翻译：要解决的问题：提供一种用于检查能够以简单且无损的方式识别缺陷的碳化硅衬底或碳化硅半导体元件的方法，并且提供一种制造碳化硅衬底或碳化硅半导体的方法具有改进性能的元件。解决方案：检查方法包括：用激光照射作为碳化硅衬底或碳化硅半导体元件的待检查对象1; 通过激光接收从待检查物体1辐射的荧光; 形成表示待检查物体1的发光状态的图像; 并基于图像识别存在于待检查对象1中的穿线边缘位错（TED）的汉堡向量的方向。此外，通过分析由汉堡矢量产生的变形和应力，确定制造条件以抑制失真和应力。因此，在制造条件下制造碳化硅基板或碳化硅半导体元件。

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