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1. 发明专利

JP2006117559A Method for refining trimethylsilane 有权
标题翻译：精制三甲硅氧烷的方法
公开(公告)号：JP2006117559A
公开(公告)日：2006-05-11
申请号：JP2004305306
申请日：2004-10-20
申请人： Central Glass Co Ltd , セントラル硝子株式会社
发明人： SHIBAYAMA SHIGERO , OHASHI MITSUYA
IPC分类号： C07F7/08
摘要： PROBLEM TO BE SOLVED: To provide a method for refining trimethylsilanes useful as a film-forming material in the production of semiconductors.
SOLUTION: This method comprises adsorbing and removing silanes, methylsilanes and dimethylsilanes in trimethylsilanes by using an active carbon in which at least copper oxide (II) and zinc oxide are mixed and solidified.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种在半导体生产中精制用作成膜材料的三甲基硅烷的方法。解决方案：该方法包括使用至少氧化铜（II）和氧化锌混合固化的活性炭吸附并除去三甲基硅烷中的硅烷，甲基硅烷和二甲基硅烷。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2004331465A Method of manufacturing xenon difluoride 有权
公开(公告)号：JP2004331465A
公开(公告)日：2004-11-25
申请号：JP2003130924
申请日：2003-05-09
申请人： Central Glass Co Ltd , セントラル硝子株式会社
发明人： SHIBAYAMA SHIGERO , OHASHI MITSUYA
IPC分类号： C01B23/00 , B01J27/128
摘要： PROBLEM TO BE SOLVED: To provide a method of efficiently manufacturing xenon difluoride used as an isotropic etching gas for semiconductor manufacture in an electronic field.
SOLUTION: Xenon and fluorine are reacted with each other using a reactor having a cooling solidifying instrument. As a catalyst, nickel fluoride or cobalt fluoride is used.
COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2006070002A Method for producing tetraorganosilane 审中-公开
标题翻译：生产四硼化硅的方法
公开(公告)号：JP2006070002A
公开(公告)日：2006-03-16
申请号：JP2004258652
申请日：2004-09-06
申请人： Central Glass Co Ltd , セントラル硝子株式会社
发明人： OGAWA TAKESHI , OHASHI MITSUYA
IPC分类号： C07F7/08 , C07B61/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a tetraorganosilane useful as a film-forming raw material, when a semiconductor is produced, or a standard substance, when NMR measurement is conducted.
SOLUTION: In this method for producing the tetraorganosilane expressed by general formula R
4 Si (R is a 1-3C alkyl or a 6-7C aryl), an organohalide compound expressed by general formula RX (X is a halogen) is reacted with silicon or a silicon-containing compound and aluminum at a temperature range of 200-350°C by using copper or a copper-containing compound as a catalyst.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：待解决的问题：提供一种制造用作成膜原料的四有机硅烷，当制备半导体时的方法或当进行NMR测量时的标准物质。解决方案：在通式R 4 S（R为1-3C烷基或6-7C芳基）表示的四有机硅烷的制造方法中，由通式RX表示的有机卤化物（X为卤素）通过使用铜或含铜化合物作为催化剂，在200-350℃的温度范围内与硅或含硅化合物和铝反应。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2004307261A Method for refining xenon difluoride 有权
公开(公告)号：JP2004307261A
公开(公告)日：2004-11-04
申请号：JP2003103254
申请日：2003-04-07
申请人： Central Glass Co Ltd , セントラル硝子株式会社
发明人： SHIBAYAMA SHIGERO , OHASHI MITSUYA
IPC分类号： C01B23/00
摘要： PROBLEM TO BE SOLVED: To provide a method for refining xenon difluoride to high purity to be used as an isotropic etching gas for manufacturing a semiconductor in the field of electronics. SOLUTION: Xenon tetrafluoride and xenon hexafluoride included in xenon difluoride are reduced with xenon in the temperature range of 200 to 1,000°C. COPYRIGHT: (C)2005,JPO&NCIPI

5. 发明专利

JP2013014494A Method for producing lithium hexafluorophosphate concentrated liquid 有权
标题翻译：生产十六烷基磷酸盐浓缩液体的方法
公开(公告)号：JP2013014494A
公开(公告)日：2013-01-24
申请号：JP2011165773
申请日：2011-07-28
申请人： Central Glass Co Ltd , セントラル硝子株式会社
发明人： OE SHU , SATO KEIJI , OHASHI MITSUYA , MITSUI TOSHINORI
IPC分类号： C01B25/455 , H01M10/0568
CPC分类号： H01M10/056 , C01D15/005 , H01M10/052 , H01M10/0563 , H01M10/0568 , H01M10/0569 , Y02E60/122 , Y02P70/54
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a high-purity lithium hexafluorophosphate concentrated liquid with ease and at low cost, and a method for producing an electrolyte solution for a lithium ion battery containing high-purity lithium hexafluorophosphate using the same as an electrolyte.SOLUTION: This method for producing a lithium hexafluorophosphate concentrated liquid comprises: reacting phosphorus trichloride, chlorine, and lithium chloride in a non-aqueous organic solvent; then, reacting the reaction product generated in the solvent with hydrogen fluoride to generate lithium hexafluorophosphate. After the reaction product generated in the solvent is reacted with hydrogen fluoride, filtration is performed. The filtrate is subjected to degassing condensation and a lithium hexafluorophosphate concentrated liquid can be obtained.
摘要翻译：解决的问题：提供一种容易且低成本地生产高纯度六氟磷酸锂浓缩液的方法，以及使用含有高纯度六氟磷酸锂的锂离子电池用电解质溶液的制造方法与电解质相同。解决方案：用于生产六氟磷酸锂浓缩液的方法包括：使三氯化磷，氯和氯化锂在非水有机溶剂中反应; 然后使溶剂中产生的反应产物与氟化氢反应生成六氟磷酸锂。在溶剂中产生的反应产物与氟化氢反应后，进行过滤。将滤液进行脱气冷凝，得到六氟磷酸锂浓缩液。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2003081919A Method for producing trifluoromethylhypofluorite 有权
标题翻译：生产三氟甲磺酰氟的方法
公开(公告)号：JP2003081919A
公开(公告)日：2003-03-19
申请号：JP2001276142
申请日：2001-09-12
申请人： Central Glass Co Ltd , セントラル硝子株式会社
发明人： KAWASHIMA TADAYUKI , MORI ISAMU , OHASHI MITSUYA , TAMURA TETSUYA
IPC分类号： C07C71/00 , C07B61/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing trifluoromethylhypofluorite (CF
3 OF) useful as a reagent for organic syntheses, as a cleaning gas or etching gas for producing semiconductors.
SOLUTION: In this method for producing the trifluoromethylhypofluorite, a mixed gas of carbonyl difluoride with fluorine flows through a reactor filled with a catalyst comprising a metal fluoride (cesium fluoride, sodium fluoride, potassium fluoride, rubidium fluoride or barium difluoride) at a linear velocity of ≤5 cm/sec.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供可用作有机合成试剂的可用作制备半导体的清洁气体或蚀刻气体的产生氟化氟三氟甲基（CF 3 OF）的方法。解决方案：在该氟代氟氟化三氟甲烷的制造方法中，将氟化二氟化物与氟化氢的混合气体以线速度流过填充有包含金属氟化物（氟化铯，氟化钠，氟化钾，氟化铷或二氟化碳）的催化剂的反应器 <5厘米/秒。

7. 发明专利

JP2006316030A Reduction method using lithium aluminum hydride 有权
标题翻译：使用氢氧化锂的还原方法
公开(公告)号：JP2006316030A
公开(公告)日：2006-11-24
申请号：JP2005143067
申请日：2005-05-16
申请人： Central Glass Co Ltd , セントラル硝子株式会社
发明人： OGAWA TAKESHI , OHASHI MITSUYA
IPC分类号： C07B31/00 , B01J27/125 , C07B61/00 , C07C1/26 , C07C9/15 , C07C29/10 , C07C29/14 , C07C29/143 , C07C29/147 , C07C31/08 , C07C31/10 , C07C33/22 , C07C33/26 , C07C39/04 , C07C209/32 , C07C209/48 , C07C209/50 , C07C211/05 , C07C211/06 , C07C211/07 , C07C319/06 , C07C321/04
CPC分类号： Y02P20/52
摘要： PROBLEM TO BE SOLVED: To provide a reduction method using lithium aluminum hydride which is a useful reducing agent in organic synthesis. SOLUTION: In the reduction reaction using the lithium aluminum hydride in the organic synthesis, a substance which releases an AlCl 4 - ion in an aromatic hydrocarbon-based solvent as a reaction solvent is used as a catalyst. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供使用氢化铝锂的还原方法，其是有机合成中有用的还原剂。解决方案：在有机合成中使用氢化铝锂的还原反应中，将芳族烃系溶剂中的AlCl 4还原离子的物质作为使用反应溶剂作为催化剂。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2005154336A Method for producing organosilane 有权
标题翻译：生产有机硅的方法
公开(公告)号：JP2005154336A
公开(公告)日：2005-06-16
申请号：JP2003394883
申请日：2003-11-26
申请人： Central Glass Co Ltd , セントラル硝子株式会社
发明人： OGAWA TAKESHI , MURAMATSU YOSHIHIRO , OHASHI MITSUYA
IPC分类号： C07B61/00 , C07F7/08
CPC分类号： C07F7/0896
摘要： PROBLEM TO BE SOLVED: To provide a method for producing an organosilane useful as a film-forming raw material in semiconductor production, or useful for organic synthesis.
SOLUTION: The method for producing the organosilane represented by general formula (2): SiH
n R
4-n (wherein, n is an integer of 1-3; and R is an alkyl group or an aryl group) by reducing an organosilane represented by general formula (1): SiX
n R
4-n (wherein, X is a halogen or an alkoxide; n is an integer of 1-3; and R is an alkyl group or an aryl group) uses an aromatic hydrocarbon-based organic solvent as a reaction solvent, and lithium aluminum hydride as a hydrogenation agent.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：待解决的问题：提供一种在半导体生产中用作成膜原料的有机硅烷的制备方法或可用于有机合成的方法。解决方案：由通式（2）表示的有机硅烷的制备方法：其中n为1-3的整数 ; R是烷基或芳基），通过还原由通式（1）表示的有机硅烷：其中X是一个卤素或烷氧基; n为1-3的整数，R为烷基或芳基）使用芳香族烃系有机溶剂作为反应溶剂，氢化铝锂作为氢化剂。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2009129541A Electrolyte solution for nonaqueous battery and nonaqueous battery using this 有权
标题翻译：非电解电池和非电解电池的电解液
公开(公告)号：JP2009129541A
公开(公告)日：2009-06-11
申请号：JP2007299640
申请日：2007-11-19
申请人： Central Glass Co Ltd , セントラル硝子株式会社
发明人： TSUJIOKA SHOICHI , OHASHI MITSUYA , FUJIWARA AIICHIRO
IPC分类号： H01M10/0568 , H01M6/16 , H01M10/052 , H01M10/0567
CPC分类号： H01M10/052 , H01M10/0567
摘要： PROBLEM TO BE SOLVED: To provide an electrolyte solution for nonaqueous batteries having high flame retardancy and a nonaqueous battery comprising the electrolyte solution for nonaqueous batteries and exhibiting excellent battery performance and high safety.
SOLUTION: The electrolyte solution for the nonaqueous battery contains, in a nonaqueous solvent, a first additive composed of at least one compound selected from a group consisting of bis (oxalato) borate, difluoro (oxalato) borate, tris (oxalato) phosphate, difluoro (bis oxalato) phosphate, and tetrafluoro (oxalato) phosphate, a second additive composed of a cyclic phosphazene compound represented by a general formula (1)(NPR
2 )
n , and a supporting salt. In the formula, R independently represents a halogen element, an alkoxy group or an aryloxy group; and n represents 3 or 4.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决方案：提供一种具有高阻燃性的非水电解液的电解质溶液和非水电池，其包含非水电池的电解质溶液并且具有优异的电池性能和高的安全性。非水电解质的电解液在非水溶剂中含有由选自双（草酸）硼酸盐，二氟（草酸）硼酸盐，三（草酸盐）硼酸盐）组成的组中的至少一种化合物组成的第一添加剂，磷酸酯，二氟（双草酸根）磷酸酯和四氟（草酸根）磷酸酯），由通式（1）表示的环状磷腈化合物（NPR 2 ）< SB>和支持盐。在该式中，R独立地表示卤素元素，烷氧基或芳氧基; 而n代表3或4.版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2008192899A Modifier for low-permittivity film and its manufacturing method 有权
标题翻译：低密度膜的改性剂及其制造方法
公开(公告)号：JP2008192899A
公开(公告)日：2008-08-21
申请号：JP2007026783
申请日：2007-02-06
申请人： Central Glass Co Ltd , セントラル硝子株式会社
发明人： OGAWA TAKESHI , OHASHI MITSUYA
IPC分类号： H01L21/316 , H01L21/768
CPC分类号： H01L23/5329 , H01L21/02137 , H01L21/02282 , H01L21/02337 , H01L21/31058 , H01L21/3122 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a modifier for reducing the relative permittivity of a low-permittivity film used when a semiconductor device is manufactured, and also a method of manufacturing the low-permittivity film modified using the modifier. SOLUTION: The modifier for reducing the relative permittivity of a low-permissivity used in a semiconductor device contains at least one or more kinds of silicon compounds expressed by formula (1) R 3-x H x SiN 3 , as active constituents, where R denotes an alkyl group having C1 to C4 and n denotes an integer of 0 to 3. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供用于降低制造半导体器件时使用的低介电常数膜的相对介电常数的改性剂，以及使用改性剂改性的低介电常数膜的制造方法。解决方案：用于降低在半导体器件中使用的低容许率的相对介电常数的改性剂包含至少一种或多种由式（1）表示的硅化合物：R 3-x H 作为活性成分，其中R表示具有C1〜C4的烷基，n表示0〜3的整数。（C） 2008年，日本特许厅和INPIT

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