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1. 发明专利

JP2006161098A Method for forming metal oxide film 审中-公开
标题翻译：形成金属氧化膜的方法
公开(公告)号：JP2006161098A
公开(公告)日：2006-06-22
申请号：JP2004353859
申请日：2004-12-07
申请人： Canon Inc , キヤノン株式会社
发明人： NISHIMOTO TOMONORI , TOYAMA JO , HAYASHI SUSUMU , SONODA YUICHI , MIYAMOTO YUSUKE , IWATA MASUMITSU , KONDO TAKAHARU , YAMADA SATOSHI
IPC分类号： C25D21/00 , C25D9/08 , C25D21/12 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To swiftly detect the abnormality of an electric circuit in the production of a metal oxide film by electrodeposition, and to prevent the reduction of yield. SOLUTION: In the film formation method where a d.c. source is connected to each of a plurality of metal electrodes arranged in parallel, and a metal oxide film is electrodeposited on a beltlike electrically conductive counter substrate, the electric potential of each metal electrode to the electric potential of a correcting electrode located on the beltlike substrate is measured, further, in the case the difference in the electric potential between the adjoining metal electrodes exceeds a prescribed value, the electric circuit on the side whose electric potential is higher is shielded from the whole circuit. Alternatively, after the shielding, an electrode in a spare system is energized. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过电沉积来快速检测生产金属氧化物膜的电路的异常，并防止产率降低。
解决方案：在成膜方法中，源极连接到平行布置的多个金属电极中的每一个上，并且将金属氧化物膜电沉积在带状导电对衬底上，每个金属电极的电位与位于带状衬底上的校正电极的电位此外，在相邻的金属电极之间的电位差超过规定值的情况下，电位越高的一侧的电路就从整个电路被屏蔽。或者，在屏蔽之后，备用系统中的电极被通电。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2004296662A Zinc oxide film and photovoltaic element using the same 审中-公开
公开(公告)号：JP2004296662A
公开(公告)日：2004-10-21
申请号：JP2003085496
申请日：2003-03-26
申请人： Canon Inc , キヤノン株式会社
发明人： NISHIMOTO TOMONORI , TOYAMA JO , HAYASHI SUSUMU , SONODA YUICHI , IWATA MASUMITSU , MIYAMOTO YUSUKE , YAMADA SATOSHI , TOKAWA MAKOTO , KONDO TAKAHARU
IPC分类号： C23C14/08 , H01L21/316 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a zinc oxide film whose residual internal stress is sufficiently small and hence influence given to deformation in a substrate is sufficiently small, and to provide an efficient element by incorporating the zinc oxide film into a photovoltaic element. SOLUTION: In the zinc oxide film including a plurality of hollow regions, when one hollow region confirmed by the image of the section SEM of the zinc oxide film is approximated by a circle having the same area, the diameter of an approximate circle is defined as L (nm). At the same time, in the image of the section SEM, when the ratio of area, totalling the area of the hollow region having at least 50 nm L to the entire area of the zinc oxide film including the hollow region of the image of the section SEM is defined as R(%), formation should be made so that R is 3% or more and 50% or less. COPYRIGHT: (C)2005,JPO&NCIPI

3. 发明专利

JP2004253704A Forming method for deposition film, manufacturing method for substrate of semiconductor element, and manufacturing method for photovoltaic element 审中-公开
公开(公告)号：JP2004253704A
公开(公告)日：2004-09-09
申请号：JP2003044345
申请日：2003-02-21
申请人： Canon Inc , キヤノン株式会社
发明人： NISHIMOTO TOMONORI
IPC分类号： C23C14/56 , C23C16/54 , H01L21/205 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To manufacture a high-quality semiconductor element and photovoltaic element with their good yields, by preventing the generations of their flaws, the faultinesses of their external appearances and their electrodes, and the like in their after-processes, etc. SOLUTION: A forming method for deposition films is the one wherein a deposition film is formed on a strip-form substrate by a roll to roll method. The forming method has a process wherein the curl deformations in the longitudinal and widthwise directions of the strip-form substrate which occur by the deformation stress generated in the forming process of the deposition film are removed concurrently by applying external stresses to the substrate. COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2004332043A Method and apparatus for forming zinc oxide thin film and method for forming photovoltaic element 审中-公开
标题翻译：形成氧化锌薄膜的方法和装置及形成光伏元件的方法
公开(公告)号：JP2004332043A
公开(公告)日：2004-11-25
申请号：JP2003129062
申请日：2003-05-07
申请人： Canon Inc , キヤノン株式会社
发明人： TOYAMA JO , HAYASHI SUSUMU , SONODA YUICHI , NISHIMOTO TOMONORI , IWATA MASUMITSU , MIYAMOTO YUSUKE , YAMADA SATOSHI , KONDO TAKAHARU
IPC分类号： C25D9/08 , C25D21/10 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To stably and inexpensively form a zinc oxide thin film for a long time; and to inexpensively supply a high-efficiency photovoltaic element by incorporating the thin film into the element. SOLUTION: In the method for forming the zinc oxide thin film by electrodeposition, a white powdery byproduct depositing on an anode during the formation of the zinc oxide thin film is reduced and removed by the convection of an electrodeposition liquid. The photovoltaic element is manufactured by this method. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：长时间稳定且廉价地形成氧化锌薄膜; 并且通过将薄膜并入元件来廉价地供应高效光伏元件。解决方案：在通过电沉积形成氧化锌薄膜的方法中，通过电沉积液的对流减少在氧化锌薄膜形成过程中沉积在阳极上的白色粉状副产物。通过该方法制造光电元件。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2004289034A Treatment method for zinc oxide film and method for manufacturing photovoltaic element using same 审中-公开
公开(公告)号：JP2004289034A
公开(公告)日：2004-10-14
申请号：JP2003081785
申请日：2003-03-25
申请人： Canon Inc , キヤノン株式会社
发明人： IWATA MASUMITSU , TOYAMA JO , HAYASHI SUSUMU , NISHIMOTO TOMONORI , KONDO TAKAHARU , YAMADA SATOSHI , SONODA YUICHI , MIYAMOTO YUSUKE
IPC分类号： H05H1/46 , B01J19/08 , C23C16/505 , C25D5/50 , C25D9/04 , C25D9/08 , H01L21/3065 , H01L21/31 , H01L31/00 , H01L31/0216 , H01L31/04 , H01L31/052 , H01L31/18
CPC分类号： H01L31/1884 , C25D9/04 , H01L31/056 , H01L31/1864 , Y02E10/52 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a means for electrically obtaining a low-resistance zinc oxide film without deteriorating the light transmissivity of the zinc oxide film by its processing method in the zinc oxide film electrochemically precipitated from an aqueous solution. SOLUTION: The zinc oxide film electrochemically precipitated from the aqueous solution is heated at a temperature not lower than 150°C and not higher than 400°C in an N 2 atmosphere containing oxygen or in an inactive gas atmosphere. COPYRIGHT: (C)2005,JPO&NCIPI

6. 发明专利

JP2006093477A Zinc oxide layer and photovoltaic element 审中-公开
标题翻译：氧化锌层和光电元件
公开(公告)号：JP2006093477A
公开(公告)日：2006-04-06
申请号：JP2004278604
申请日：2004-09-27
申请人： Canon Inc , キヤノン株式会社
发明人： KONDO TAKAHARU , TOYAMA JO , HAYASHI SUSUMU , SONODA YUICHI , NISHIMOTO TOMONORI , IWATA MASUMITSU , MIYAMOTO YUSUKE , YAMADA SATOSHI , KARIYA TOSHIMITSU
IPC分类号： H01L31/04 , C23C14/08
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To inexpensively form a zinc oxide layer with excellent reflection characteristics/electric characteristics, and to inexpensively supply a highly efficient element by incorporating the layer in a photovoltaic element. SOLUTION: The photovoltaic element formed by stacking at least the zinc oxide layer and a semiconductor layer on a substrate, wherein the zinc oxide layer contains chlorine atoms of 1.0×10 18 cm -3 ≤ and ≥5.0×10 19 cm -3 . COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了廉价地形成具有优异的反射特性/电特性的氧化锌层，并且通过将该层并入光伏元件中而廉价地提供高效元素。解决方案：通过在基板上堆叠至少氧化锌层和半导体层而形成的光电元件，其中氧化锌层含有1.0×10 -6 / cm 2的氯原子 - 3 ≤和≥5.0×10 19 cm -3 。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2005171271A Method of forming deposition film, and method of producing photovolatic sensor using the same 审中-公开
标题翻译：形成沉积膜的方法和使用其制造光电传感器的方法
公开(公告)号：JP2005171271A
公开(公告)日：2005-06-30
申请号：JP2003408479
申请日：2003-12-08
申请人： Canon Inc , キヤノン株式会社
发明人： YAMADA SATOSHI , TOYAMA JO , HAYASHI SUSUMU , SONODA YUICHI , NISHIMOTO TOMONORI , IWATA MASUMITSU , MIYAMOTO YUSUKE , KONDO TAKAHARU
IPC分类号： C25D9/08 , C23C28/00 , C23C28/04 , C25D5/34 , C25D5/48 , H01L21/288 , H01L31/04
CPC分类号： C25D5/48 , C23C28/00 , C25D5/34
摘要： PROBLEM TO BE SOLVED: To form a deposition film having desired properties even after the maintenance of apparatuses in a method where the deposition film is formed using electrochemical reaction from an aqueous solution. SOLUTION: In the method where a deposition film is formed using electrochemical reaction from an aqueous solution, a stage where an objective deposition film is formed under first deposition film forming conditions; a stage where at least a part of a member in contact with the aqueous solution is exchanged or depositions on the surface of the member are removed; and a stage where a deposition film is formed under second deposition film forming conditions are performed in this order, and thereafter, the objective deposition film is formed under the first deposition film forming conditions once more. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：即使在使用来自水溶液的电化学反应形成沉积膜的方法中维持设备之后，也形成具有期望性能的沉积膜。解决方案：在使用电化学反应从水溶液形成沉积膜的方法中，在第一沉积膜形成条件下形成目标沉积膜的阶段; 与水溶液接触的部件的至少一部分被更换或在该部件的表面上的沉积被去除的阶段; 并且在第二沉积膜形成条件下形成沉积膜的阶段依次进行，此后，在第一沉积膜形成条件下再次形成目标沉积膜。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004363544A Zinc oxide film and photovoltaic element using the same, and forming method of zing oxide 审中-公开
公开(公告)号：JP2004363544A
公开(公告)日：2004-12-24
申请号：JP2003366968
申请日：2003-10-28
申请人： Canon Inc , キヤノン株式会社
发明人： KONDO TAKAHARU , TOYAMA JO , HAYASHI SUSUMU , SONODA YUICHI , NISHIMOTO TOMONORI , IWATA MASUMITSU , MIYAMOTO YUSUKE , YAMADA SATOSHI , TOKAWA MAKOTO
IPC分类号： C01G9/02 , C23C14/08 , C23C28/04 , C25D9/08 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To improve on the properties and durability of a zinc oxide film for use as a light confining layer in a photovoltaic element, and to make the zinc oxide film formable at a low cost. SOLUTION: In this zinc oxide film, a plurality of structures on the surface are protrusions each having a first face and second face meeting each other along one curved line. In more than half of the protrusions, the angle of inclination of the first face falls in the range of ≥30° and ≤60°, and the angle of inclination of the second face falls in the range of 10° to 35°. COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2004331991A Method for electrodepositing zinc oxide film, electrodeposition apparatus and photovoltaic device 审中-公开
公开(公告)号：JP2004331991A
公开(公告)日：2004-11-25
申请号：JP2003124679
申请日：2003-04-30
申请人： Canon Inc , キヤノン株式会社
发明人： SONODA YUICHI , TOYAMA JO , HAYASHI SUSUMU , NISHIMOTO TOMONORI , IWATA MASUMITSU , MIYAMOTO YUSUKE , YAMADA SATOSHI , KONDO TAKAHARU
IPC分类号： C25D9/08 , C25D13/22 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method for electrodepositing a zinc oxide film superior in a light confinement effect and reliability; an apparatus therefor; and a photovoltaic device with the use of it. SOLUTION: The electrodeposition apparatus for continuously forming a zinc oxide film on an electroconductive substrate has a sprouting means 208 in the region which is not located in between the electroconductive substrate 202 and a counter electrode 206 in an electrodeposition bath 205. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2004308001A Method for forming zinc oxide film and method for forming photovoltaic element 审中-公开
公开(公告)号：JP2004308001A
公开(公告)日：2004-11-04
申请号：JP2004083848
申请日：2004-03-23
申请人： Canon Inc , キヤノン株式会社
发明人： MIYAMOTO YUSUKE , TOYAMA JO , HAYASHI SUSUMU , SONODA YUICHI , NISHIMOTO TOMONORI , IWATA MASUMITSU , KONDO TAKAHARU , YAMADA SATOSHI
IPC分类号： C01G9/02 , C25D9/08 , C25D11/34 , H01L31/04
CPC分类号： Y02E10/52
摘要： PROBLEM TO BE SOLVED: To continuously form a thin zinc oxide film by electrolytic deposition without allowing a film to adhere to the rear surface of a substrate. SOLUTION: The zinc oxide film is formed on the substrate 100 by applying an electric current between the substrate 100 and an electrode 121, both the substrate 100 and the electrode 121 being immersed in an aqueous solution containing at least zinc ions and a carbohydrate. After the substrate 100 is taken out of the solution, at least the edge part of the substrate 100 surface not facing the electrode 121 is brought into contact with a water-absorptive member 115 having supplied a chemical liquid or is directly supplied with the chemical liquid and brought into contact with the water-absorptive member 115; thus, a byproduct formed on the substrate 100 surface not facing the electrode 121 is dissolved and removed. COPYRIGHT: (C)2005,JPO&NCIPI

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