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1. 发明专利

JP2013139642A Plasma treatment apparatus applied for sputtering film forming 审中-公开
标题翻译：适用于溅射膜成型的等离子体处理设备
公开(公告)号：JP2013139642A
公开(公告)日：2013-07-18
申请号：JP2013076904
申请日：2013-04-02
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SNIL WIKURAMANAYAKA , WATANABE EISAKU , NAGAHAMA HANAKO , SATO MAKOTO , MIZUNO SHIGERU
IPC分类号： C23C14/35 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a capacitive coupling type plasma treatment apparatus for a sputtering film forming, which forms an ion flux with a uniform high concentration on a surface of a substrate without causing redeposition to a target.SOLUTION: A plasma treatment apparatus, in which a magnet is attached to a metal sheet, includes: an upper electrode 1 provided with a capacitive coupling type mechanism; a target member 2 which is fixed to the upper electrode and made from a nonmagnetic substance, a plurality of magnets 6 which are arranged on the upper surface of the target member, have equal distance between the two of the magnets, and also have alternately changing magnetic pole polarities; a lower electrode 3 arranged in parallel with the upper electrode; a wafer 17 mounted on the lower electrode; a high frequency power source 16 which is operated at a frequency in the range of 10 to 300 MHz and connected with the upper electrode via a matching circuit 15, and a rolling mechanism which rotates a plurality of magnets around a central axis of the upper electrode.
摘要翻译：要解决的问题：提供一种用于溅射成膜的电容耦合型等离子体处理装置，其在基板表面上形成均匀高浓度的离子通量，而不会再沉积到靶材上。解决方案：一种等离子体处理装置，其中磁体连接到金属片，包括：具有电容耦合型机构的上电极1; 固定到上电极并由非磁性物质制成的目标构件2，布置在目标构件的上表面上的多个磁体6在两个磁体之间具有相等的距离，并且还具有交替变化的磁极极性; 与上电极平行设置的下电极3; 安装在下电极上的晶片17; 通过匹配电路15与频率范围为10〜300MHz并与上部电极连接的高频电源16以及绕上述上部电极的中心轴旋转多个磁体的滚动机构。

2. 发明专利

JP2011017088A Plasma treatment apparatus for applying sputtering film deposition 审中-公开
标题翻译：用于应用溅射膜沉积的等离子体处理装置
公开(公告)号：JP2011017088A
公开(公告)日：2011-01-27
申请号：JP2010215112
申请日：2010-09-27
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SNIL WIKURAMANAYAKA , WATANABE EISAKU , NAGAHAMA HANAKO , SATO MAKOTO , MIZUNO SHIGERU
IPC分类号： C23C14/35 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a capacitive coupling type plasma treatment apparatus for sputtering film deposition, wherein an ion flux with a uniform high concentration is formed on the surface of a substrate, without causing re-deposition to a target.SOLUTION: The plasma treatment apparatus is equipped with: an upper electrode 1 provided with a capacitive coupling type mechanism; a target member 2 which is fitted to the upper electrode and made from a nonmagnetic substance; a plurality of magnets 6 which are arranged on the upper surface of the target member, and between the two of them, have equal distance and also have alternately changing magnetic pole polarities; a lower electrode 3 arranged in parallel with the upper electrode; a wafer 17 mounted on the lower electrode; and a high frequency power source 16 which is operated at a frequency in the range of 10 to 300 MHz and connected to the upper electrode via a matching circuit 15.
摘要翻译：要解决的问题：提供一种用于溅射膜沉积的电容耦合型等离子体处理装置，其中在基板的表面上形成具有均匀高浓度的离子通量，而不会引起对靶的再沉积。解决方案：等离子体处理装置配备有：设置有电容耦合型机构的上电极1; 目标构件2，其被安装到上部电极并由非磁性物质制成; 设置在目标构件的上表面上并且在它们中的两个之间的多个磁体6具有相等的距离并且还具有交替变化的磁极极性; 与上电极平行设置的下电极3; 安装在下电极上的晶片17; 以及高频电源16，其工作频率范围为10〜300MHz，经由匹配电路15与上电极连接。

3. 发明专利

JP2010163690A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2010163690A
公开(公告)日：2010-07-29
申请号：JP2010045946
申请日：2010-03-02
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： TANAKA HIROSHI , KONAGA KAZUYA , WATANABE EISAKU , MORIMOTO EITARO
IPC分类号： C23C14/54 , H05H1/24 , H05H1/46
CPC分类号： C23C14/34 , C23C14/564 , H01J37/34 , H01J37/3441
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can obtain a stable film deposition result even in the case an adhesion preventing shield is exchanged. SOLUTION: The plasma processing apparatus is provided with a chamber 103 maintained at a predetermined potential, a substrate stage 104 for holding a substrate in the chamber, an electrode 105 for generating plasma in the chamber by the application of alternating-current power, a conductive member 302 constituted such that the member surrounds a plasma space between the substrate stage and the electrode, thereby connecting the substrate stage and a sidewall of the chamber when the plasma is formed, and can form an opening for introducing the substrate to the substrate stage by the separation of at least part of the member due to the movement thereof by a driving mechanism when the plasma is not formed, and an adhesion-preventing shield 200 covering the surface on the plasma space side of the conductive member. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供即使在交换防粘附屏蔽的情况下也能获得稳定的膜沉积结果的等离子体处理装置。解决方案：等离子体处理装置设置有保持在预定电位的腔室103，用于在腔室中保持衬底的衬底台104，用于通过施加交流电力在腔室中产生等离子体的电极105 形成为使得该构件围绕衬底台和电极之间的等离子体空间的导电构件302，从而当形成等离子体时连接衬底台和腔室的侧壁，并且可以形成用于将衬底引导到通过在不形成等离子体时由于驱动机构的移动而使构件的至少一部分分离的衬底台;以及覆盖导电构件的等离子体空间侧的表面的防粘接屏蔽200。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2014038874A Plasma-induced cvd method 审中-公开
标题翻译：等离子体诱导CVD方法
公开(公告)号：JP2014038874A
公开(公告)日：2014-02-27
申请号：JP2010250138
申请日：2010-11-08
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SOMEYA RYO , OGATA TETSUO , WATANABE EISAKU
IPC分类号： H01L21/205 , C23C16/42 , C23C16/50 , H01L21/316 , H01L21/318
CPC分类号： C23C16/452 , C23C16/4404 , C23C16/4405 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274
摘要： PROBLEM TO BE SOLVED: To reduce a time period required for a seasoning process when a silicon compound is deposited in a remote plasma-induced CVD method to improve productivity.SOLUTION: In a seasoning process of a remote plasma-induced CVD method in which a vacuum vessel is separated into a plasma generation space and a substrate processing space with a partition wall, while in general a material gas is flowed in the plasma generation space and a silicon containing gas is flowed in the substrate processing space, by flowing in both material gas and silicon containing gas into the plasma generation space, a time period required for the seasoning process can be significantly reduced.
摘要翻译：要解决的问题：为了减少在远程等离子体诱导的CVD方法中沉积硅化合物以提高生产率的调味过程所需的时间。解决方案：在远程等离子体诱导CVD方法的调味过程中，其中真空容器被分离成等离子体产生空间和具有分隔壁的基板处理空间，而通常在等离子体产生空间中流动材料气体，并且含硅气体在基板处理空间中流动，通过流入两种材料气体和硅的气体进入等离子体产生空间，可以显着地减少调味过程所需的时间。

5. 发明专利

JP2011026624A Plasma processing apparatus 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：JP2011026624A
公开(公告)日：2011-02-10
申请号：JP2007264510
申请日：2007-10-10
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： WATANABE EISAKU , IKEDA MASAYOSHI , SHIBUYA YOSUKE
IPC分类号： C23C14/35
CPC分类号： H01J37/3266 , H01J37/32091 , H01J37/3455
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of easily adjusting individual heights of a magnet mechanism having a plurality of magnets with different polarities and capable of improving the film thickness non-uniformity in forming a thin film.
SOLUTION: The plasma processing apparatus is provided with a processing chamber 100 which can be evacuated, and a first electrode (a high frequency electrode) arranged inside the processing chamber. It is further provided with a plurality of magnets 14 arranged on the first electrode 10 with polarities being arranged reversely between the adjacent magnets, and a second electrode (a substrate loading electrode) 20 arranged to face the first electrode 10. The plasma processing apparatus is also provided with a distance adjusting mechanism for individually adjusting the distance between the plurality of magnets 14 and the first electrode 10.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种等离子体处理装置，其能够容易地调节具有不同极性的多个磁体的磁体机构的独立高度，并且能够提高薄膜形成时的膜厚不均匀性。解决方案：等离子体处理装置设置有能够抽真空的处理室100和布置在处理室内部的第一电极（高频电极）。还设置有多个磁体14，其布置在第一电极10上，极性相对地布置在相邻的磁体之间，第二电极（衬底加载电极）20布置成面对第一电极10.等离子体处理装置还设置有用于单独调整多个磁体14和第一电极10之间的距离的距离调节机构。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2010270371A Apparatus for treating substrate 审中-公开
标题翻译：用于处理基板的装置
公开(公告)号：JP2010270371A
公开(公告)日：2010-12-02
申请号：JP2009124099
申请日：2009-05-22
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： SAITO TAKAYUKI , WATANABE EISAKU
IPC分类号： C23C14/34 , H01L21/203 , H01L21/3065 , H01L21/31 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for treating a substrate capable of uniformly adjusting temperature over the whole substrate by adjusting flow rate of temperature adjusting gas to the rear surface of the substrate. SOLUTION: The apparatus for treating a substrate comprises: a substrate holder disposed in a treatment container; a fixation device (electrostatic adsorption device 3, etc.) for fixing the substrate to the substrate holder; a first gas piping 6 which is disposed in the substrate holder and supplies temperature adjusting gas to the rear surface side; a second gas piping 7 which is disposed on an inner side of the substrate than the first gas piping 6; a first gas adjustment part 8 and a second gas adjustment part 9 which are disposed on the first piping and the second piping and adjust flow rates of the temperature adjusting gas; control parts 12, 13 for controlling gas flow rate of the first gas adjustment part and second gas adjustment part; and a plasma generating means, wherein the control part controls flow rates of the temperature adjusting gas for the first gas adjustment part and second gas adjustment part so as to be changed into respectively different gas flow rates when the plasma generation means operates. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于处理能够通过调节到衬底后表面的温度调节气体的流量而在整个衬底上均匀调节温度的衬底的设备。解决方案：用于处理衬底的设备包括：设置在处理容器中的衬底保持器; 用于将基板固定到基板支架的固定装置（静电吸附装置3等）第一气体管道6，其布置在衬底保持器中并将温度调节气体提供给后表面侧; 与第一气体配管6配置在基板的内侧的第二气体配管7; 第一气体调节部分8和第二气体调节部分9，其布置在第一管道和第二管道上并调节温度调节气体的流量; 用于控制第一气体调节部分和第二气体调节部分的气体流量的控制部分12,13; 以及等离子体产生装置，其中控制部分控制用于第一气体调节部分和第二气体调节部分的温度调节气体的流量，以便当等离子体产生装置工作时，分别改变为不同的气体流量。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2010090424A Sputtering film deposition method and plasma processing apparatus 审中-公开
标题翻译：溅射膜沉积方法和等离子体处理装置
公开(公告)号：JP2010090424A
公开(公告)日：2010-04-22
申请号：JP2008260606
申请日：2008-10-07
申请人： Canon Anelva Corp , キヤノンアネルバ株式会社
发明人： WAKAYANAGI SHUNICHI , YAMAZAKI KOJI , WATANABE EISAKU , HOSHINO AKIRA
IPC分类号： C23C14/34 , C23C14/38 , C23C14/44 , H01L21/285 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a sputtering film deposition method which deposits a film covering a recessed part such as a hole and a trench and having the improved coverage properties and the flat surface.
SOLUTION: High frequency power and direct voltage are applied to a metal target in a chamber 201 to generate plasma, and further, target particles are ionized to generate metal ions. A substrate 306 mounted on a stage holder 302 within the chamber 201 and having a recessed part at the surface is irradiated with the metal ions to deposit a thin film. In this case, sputtering film deposition is performed first under a pressure of 5 to 15 Pa to deposit a first layer, and sputtering film deposition is then performed under a pressure of 0.5 to 5 Pa to deposit a second layer on the first layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种溅射膜沉积方法，其沉积覆盖诸如孔和沟槽的凹陷部分并且具有改进的覆盖性能和平坦表面的膜。解决方案：将高频功率和直流电压施加到腔室201中的金属靶，以产生等离子体，此外，目标粒子被电离以产生金属离子。用金属离子照射安装在腔201内的台座302上并且在表面具有凹部的衬底306以沉积薄膜。在这种情况下，首先在5〜15Pa的压力下进行溅射成膜，以沉积第一层，然后在0.5至5Pa的压力下进行溅射膜沉积，以在第一层上沉积第二层。版权所有（C）2010，JPO＆INPIT

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