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    • 5. 发明专利
    • PHOTOELECTRIC CONVERSION DEVICE
    • JPH10189932A
    • 1998-07-21
    • JP26964897
    • 1997-10-02
    • CANON KK
    • KOBAYASHI ISAOENDO TADAOKAMESHIMA TOSHIOUMIBE NORIYUKISATO TOSHIAKIITABASHI SATORU
    • H01L27/14H01L27/146
    • PROBLEM TO BE SOLVED: To enable correction of the offset output value without independently arranging photoelectric conversion elements by arranging the shielding member, whose X-ray transmittance is 0% at the incident side of the X rays or light of the photoelectric conversion element in correspondence with an arbitrary photoelectric conversion element. SOLUTION: A photoelectric conversion device divides the total of 9 pixels into 3 blocks and transfers the outputs of 3 pixels per 1 block at the same time. The signal is sequentially converted into the output by a detecting integrated circuit IC through this signal wiring SIG and outputted. Furthermore, the 3 pixels in 1 block are arranged in a lateral direction, and blocks are sequentially arranged longitudinally. Thus, the respective pixels are arranged in two dimensions. A shielding member 70, whose X-ray transmittance or light transmittance is about 0%, is arranged on the incident side of the X-rays or the light of a photoelectric conversion element S13, in correspondence with the arbitrary photoelectric conversion element S13 of the photoelectric conversion device having respective photoelectric conversion elements S11-S33 of respective pixels arranged in two dimensions.
    • 10. 发明专利
    • PHOTOELECTRIC CONVERSION DEVICE
    • JPH0864793A
    • 1996-03-08
    • JP19664694
    • 1994-08-22
    • CANON KK
    • TAKEDA SHINICHIUMIBE NORIYUKIKOBAYASHI ISAOMIZUTANI HIDEMASA
    • H01L27/146H01L31/10
    • PURPOSE: To enable a photoelectric conversion device to be enhanced in an S/N ratio without providing an injection blocking layer and lessened in cost by a method wherein devices of the same laminar constitution are formed of the same material on the same insulating board, and wiring layers are formed of common films at the same time with the electrodes of the devices. CONSTITUTION: A first electrode layer 102, a first insulating layer 107 which stops carriers of both first conductivity-type and second conductivity-type from passing, a photoelectric conversion semiconductor layer 104, a second insulating layer 117, a gate electrode layer 202 of a switching element, a third insulating layer 203, a semiconductor layer 204, and a main electrode are formed of common films on the same substrate 1 through the same process, and important films very conducive to characteristics are formed in the same vacuum. By this setup, a photoelectric conversion device of this constitution is enhanced in degree of freedom of design, simplified in manufacturing process, and lessened in cost, possessed of multiple functions, and enhanced in performance.