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    • 1. 发明专利
    • POSITIONING DEVICE
    • JPH09134218A
    • 1997-05-20
    • JP31467795
    • 1995-11-08
    • CALSONIC CORPNISSAN MOTOR
    • KINO HIROYUKISATO YOSHINORIMATSUMOTO TAKASHI
    • G05D3/12G05B19/35H02P3/06
    • PROBLEM TO BE SOLVED: To provide a device which is not adversely affected by external noise without the deterioration of stop precision and the occurrence of hunting. SOLUTION: A stop range setting circuit 1 sets a stop range being a control object based on a target position signal (a) and PBR 6 detects the present position of the control object driven by a motor 5. A comparison circuit 2 compares the present position of the control object with the setting stop range. While the control object does not reach in the stop range, a signal beyond range (e) and a rotary direction indication signal (f) are outputted. The signal being stop range is inputted to a driving start judgment circuit 3. When the signal being stop range continues for more than prescribed time, a driving permission signal (g) is outputted to a driving circuit 4. The driving circuit drives the motor in a direction that the driving direction indication signal shows. Thus, an instantaneous ON/OFF signal is not inputted to the driving circuit owing to external noise even if it comes in.
    • 5. 发明专利
    • Protective device for inverter
    • 逆变器保护装置
    • JP2006304566A
    • 2006-11-02
    • JP2005126075
    • 2005-04-25
    • Nissan Motor Co Ltd日産自動車株式会社
    • SATO YOSHINORI
    • H02M7/48
    • PROBLEM TO BE SOLVED: To provide a protective device of inverter that protects the circuit of an inverter, and allows an inverter with the same standard to deliver an uniform performance, by solving the problem that an inverter having a low thermal resistance, and a high cooling effect results in delivering a better output performance than an inverter having a higher thermal resistance and a lower cooling effect owing to individual differences even for the same product, and thus even an inverter of the same standard cannot provide an uniform performance. SOLUTION: A protective device of inverter includes element temperature sensors (121, 108 to 113) for monitoring element temperatures Tj of at least one semiconductor chips, temperature correcting means (123a) for correcting the element temperatures Tj measured by the element temperature sensors based on thermal resistance of reference articles (thermal resistance of semiconductor chips of the worst articles in terms of deviations) that is an thermal resistance of predetermined reference articles, and thermal resistance of actual objects that is a thermal resistance of at least one semiconductors obtained in advance, and operation limitation determining means (123b) for determining whether or not an operation limitation of the inverter is required on the basis of values corrected by the temperature correcting means. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:为了提供保护逆变器的电路的逆变器的保护装置,并且通过解决具有低热阻的逆变器的问题,允许具有相同标准的逆变器提供均匀的性能, 并且即使对于相同的产品,由于各自的差异,与具有较高的热阻和较低冷却效果的逆变器相比,高的冷却效果导致更好的输出性能,因此即使是相同标准的逆变器也不能提供均匀的性能。 解决方案:逆变器的保护装置包括用于监测至少一个半导体芯片的元件温度Tj的元件温度传感器(121,108至113),用于校正元件温度测量的元件温度Tj的温度校正装置(123a) 基于参考制品的热阻(基于偏差的最差物品的半导体芯片的耐热性)为基准的传感器,其为预定参考物品的热阻,以及实际物体的耐热性,其为所获得的至少一种半导体的热阻 以及用于基于由温度校正装置校正的值来确定是否需要逆变器的操作限制的操作限制确定装置(123b)。 版权所有(C)2007,JPO&INPIT
    • 6. 发明专利
    • Overtemperature detecting circuit and overtemperature protection circuit
    • 过电流检测电路和过电压保护电路
    • JP2006237331A
    • 2006-09-07
    • JP2005050633
    • 2005-02-25
    • Nissan Motor Co Ltd日産自動車株式会社
    • SATO YOSHINORI
    • H01L27/04G01K7/01H01L21/822H01L29/739H01L29/78
    • PROBLEM TO BE SOLVED: To provide an overtemperature detecting circuit and an overtemperature protection circuit capable of preventing a chip from being damaged due to overtemperature by properly detecting overtemperature at the center of the chip. SOLUTION: The overtemperature detecting circuit 10 comprises a diode 11 for detecting the temperature of the semiconductor chip 23; and a threshold set circuit for setting a determination temperature threshold value of the overtemperature requiring the measure for protection of the semiconductor chip 23 in response to the change rate of the chip temperature revealed by the diode 11 by detecting the change rate. The temperature detected by the diode 11 and the determination temperature threshold value set by the threshold value set circuit are compared with each other. When the temperature detected by the diode 11 is above the determination temperature threshold value set by the threshold value set circuit, the temperature of the semiconductor chip 23 is detected to be overtemperature. COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种过温检测电路和过温保护电路,能够通过适当地检测芯片中心的过热来防止芯片由于过热而被损坏。 解决方案:过温检测电路10包括用于检测半导体芯片23的温度的二极管11; 以及阈值设定电路,用于响应于二极管11通过检测变化率而显示的芯片温度的变化率,设定需要半导体芯片23的保护措施的温度的确定温度阈值。 由二极管11检测的温度和由阈值设定电路设定的判定温度阈值进行比较。 当由二极管11检测的温度高于由阈值设定电路设定的判定温度阈值时,半导体芯片23的温度被检测为过热。 版权所有(C)2006,JPO&NCIPI
    • 7. 发明专利
    • Drive circuit for voltage driven device
    • 用于电压驱动器件的驱动电路
    • JP2004088192A
    • 2004-03-18
    • JP2002242989
    • 2002-08-23
    • Nissan Motor Co Ltd日産自動車株式会社
    • SATO YOSHINORI
    • H02M1/08H03K17/16H03K17/56
    • PROBLEM TO BE SOLVED: To restrain the switching loss or the surge voltage of a drive circuit for voltage-driven elements from increasing due to the variation of its threshold voltage. SOLUTION: The drive circuit for voltage-driven elements comprises a turn-on time measuring means 11 and a turn-off time adjusting means 12. The latter means 12 corrects the gate discharge rate of the voltage-driven element IGBT (Q1) at turning off to correct the turn-off time so that the gate discharge rate at turning off decreases with the increase of the turn-on time and vice versa, and the former means 11 measures the turn-on time based on a voltage across a capacitor C1 for charging it during turning on. It comprises a PNP transistor (Q3) an emitter terminal and a collector terminal of which are connected to the gate of the IGBT (Q1) and the ground, respectively. The capacitor C1 is connected to the base of the PNP transistor (Q3). COPYRIGHT: (C)2004,JPO
    • 要解决的问题:为了抑制电压驱动元件的驱动电路的开关损耗或浪涌电压由于其阈值电压的变化而增加。 解决方案:电压驱动元件的驱动电路包括导通时间测量装置11和关断时间调节装置12.后者装置12校正电压驱动元件IGBT(Q1)的栅极放电速率 )关闭以校正关断时间,使得关闭时的栅极放电率随着导通时间的增加而减小,反之亦然,并且前一个装置11基于两端的电压来测量导通时间 用于在接通期间对其充电的电容器C1。 它包括PNP晶体管(Q3),发射极端子和集电极端子分别连接到IGBT(Q1)的栅极和地。 电容器C1连接到PNP晶体管(Q3)的基极。 版权所有(C)2004,JPO
    • 8. 发明专利
    • Switching circuit and power supply circuit
    • JP2004015884A
    • 2004-01-15
    • JP2002164009
    • 2002-06-05
    • Nissan Motor Co Ltd日産自動車株式会社
    • SATO YOSHINORI
    • H02M1/08
    • PROBLEM TO BE SOLVED: To provide a power supply circuit wherein both stationary loss and power consumption can be reduced.
      SOLUTION: An inverter circuit 100 is operated as follows: when the load current Io is low, the notification signal OC from a controller 110 is brought to Low, and a photocoupler 107 is turned off to enable a resistor R7. As a result, the sink voltage of a shunt regulator 105 is lowered, and a transistor Q3 is adjusted by a power supply control circuit 104 so as to lower applied voltages VN and VP to IGBTs 101 and 102. Thus, the applied gate voltage is lowered, and the collector-emitter voltage is increased. Therefore, the stationary loss is reduced. If the load current Io is equal to or above a predetermined value, the current notification signal OC is brought to High to short-circuit the resistor R7. As a result, the sink voltage of the shunt regulator 105 is increased, and the transistor Q3 is adjusted so as to increase the applied voltages to the IGBTs 101 and 102. Thus, the applied gate voltage is increased. Therefore, the collector-emitter voltage is lowered, and the stationary loss is reduced.
      COPYRIGHT: (C)2004,JPO
    • 9. 发明专利
    • Switching power circuit
    • 切换电源电路
    • JP2003052166A
    • 2003-02-21
    • JP2001238320
    • 2001-08-06
    • Nissan Motor Co Ltd日産自動車株式会社
    • AZUMA KAZUYUKISATO YOSHINORI
    • H02M1/08
    • PROBLEM TO BE SOLVED: To provide a switching power circuit for supplying power to a drive circuit of a power semiconductor element, capable of preventing lowering of output voltage generated in driving the power semiconductor element.
      SOLUTION: A load control device 104 outputs a PWM drive signal to a drive circuit 102 for driving IGBTQ1. An edge detector circuit 112 detects the falling edge of the PWM drive signal, to generate a pulse signal which is synchronized with the PQM drive signal. The pulse signal permits current to run through a transformer 115, to generate drive power on its secondary side. The drive power permits charging current to run through a voltage-smoothing capacitor C and to conduct discharging and charging for turning on the IGBTQ1. Thus, lowering of output voltage can be prevented, by discharging the voltage smoothing capacitor C. Consequently, use of the voltage-smoothing capacitor of large volume type can be eliminated, which was required, to prevent the lowering of output electric power.
      COPYRIGHT: (C)2003,JPO
    • 要解决的问题:提供一种用于向功率半导体元件的驱动电路供电的开关电源电路,能够防止在驱动功率半导体元件时产生的输出电压降低。 解决方案:负载控制装置104将PWM驱动信号输出到用于驱动IGBTQ1的驱动电路102。 边沿检测电路112检测PWM驱动信号的下降沿,产生与PQM驱动信号同步的脉冲信号。 脉冲信号允许电流通过变压器115,以在其次级侧产生驱动电力。 驱动电源允许充电电流通过电压平滑电容器C并进行放电和充电以接通IGBTQ1。 因此,可以通过放电电压平滑电容器C来防止输出电压的降低。因此,可以消除使用大容量的电压平滑电容器,以防止输出电力的降低。