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1. 发明专利

JP2005117015A Manufacturing method for light emitting diode, and structure of the light emitting diode 审中-公开
标题翻译：发光二极管的制造方法和发光二极管的结构
公开(公告)号：JP2005117015A
公开(公告)日：2005-04-28
申请号：JP2004190084
申请日：2004-06-28
申请人： Arima Optoelectronics Corp , 華上光電股▲ふん▼有限公司
发明人： CHANG PAN-TZU , SUNG YING-CHE
IPC分类号： H01L21/00 , H01L21/24 , H01L29/06 , H01L33/30 , H01L33/62 , H01L33/64 , H01L33/00
CPC分类号： H01L33/0079
摘要： PROBLEM TO BE SOLVED: To provide a light emitting diode having good heat dissipation characteristics.
SOLUTION: The manufacturing method for the light emitting diode comprises: a step for preparing a growth substrate; a step for growing a semiconductor chip on the growth substrate; a step in which a metal substrate and the semiconductor chip are joined; a step for removing the growth substrate; and a step for forming a first electrode and a second electrode on a bottom side of the semiconductor chip and on a top side of the metal substrate respectively.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有良好散热特性的发光二极管。解决方案：发光二极管的制造方法包括：制备生长衬底的步骤; 在生长衬底上生长半导体芯片的步骤; 金属基板和半导体芯片接合的步骤; 去除生长衬底的步骤; 以及分别在半导体芯片的底侧和金属基板的上侧形成第一电极和第二电极的步骤。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2006121084A Luminous unit that uses multilayer compound metallic coating layer as flip chip electrode 审中-公开
标题翻译：使用多层化合物金属涂层作为芯片电极的发光单元
公开(公告)号：JP2006121084A
公开(公告)日：2006-05-11
申请号：JP2005303025
申请日：2005-10-18
申请人： Arima Optoelectronics Corp , 華上光電股▲分▼有限公司
发明人： LU CHI-WEI , HUANG WEN-CHIEH , CHANG PAN-TZU , O SHOKIN
IPC分类号： H01L33/32 , H01L33/42 , H01L33/44 , H01L33/62
CPC分类号： H01L33/405 , H01L33/32 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05155 , H01L2224/05164 , H01L2224/05166 , H01L2224/05169 , H01L2224/05184 , H01L2224/05568 , H01L2224/05573 , H01L2224/05611 , H01L2224/05644 , H01L2224/16 , H01L2924/01019 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/12041 , H01L2924/3025 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a luminous unit that uses a multilayer compound metallic coating layer with high luminous efficiency that is equipped with current dispersion and high-reflectance facilities.
SOLUTION: A chip structure 40 is equipped with a single layer Group III nitride-based compound semiconductor chip structure 40 and packaging submount 60. The single layer Group III nitride compound semiconductor chip structure 40 comprises a translucent substrate 30, primary configuration semiconductor layer 41 combined with the translucent substrate 30 and formed on the surface of the translucent substrate 30, primary electrode 42 formed on the partial surface of the primary configuration semiconductor layer 41, prime mover layer 43 formed on the surface of the primary configuration semiconductor layer 41 for the purpose of avoiding the coverage of the primary electrode 42, secondary configuration semiconductor layer 44 formed on the surface of the prime mover layer 43, and secondary electrode 45 formed on the surface of the secondary configuration layer 44. Meanwhile, the packaging submount 60 comprises at least two conductive trace lines 61 that cope with the primary electrode 42 and secondary electrode 45 separately. The chip structure 40 is combined with the packaging submount 60 through an interlayer by a reversing flip chip method.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种使用具有高发光效率的多层复合金属涂层的发光单元，其具有电流分散和高反射率设备。解决方案：芯片结构40配备有单层III族氮化物基化合物半导体芯片结构40和封装基座60.单层III族氮化物化合物半导体芯片结构40包括半透明基板30，初级配置半导体层41与透光性基板30结合并形成在透光性基板30的表面上，形成在初级配置半导体层41的部分表面上的初级电极42，形成在初级配置半导体层41的表面上的原动机层43 为了避免初级电极42的覆盖，形成在原动机层43的表面上的二次配置半导体层44和形成在次级配置层44的表面上的次级电极45.同时，包装基座60 包括与主电极42对应的至少两个导电迹线61 和二次电极45。芯片结构40通过反向倒装芯片方法通过中间层与封装基座60组合。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2005142556A Full color light emitting diode fabricated by three primary color superposition 审中-公开
标题翻译：全彩色发光二极管，由三级主色调制成
公开(公告)号：JP2005142556A
公开(公告)日：2005-06-02
申请号：JP2004305781
申请日：2004-10-20
申请人： Arima Optoelectronics Corp , 華上光電股▲分▼有限公司
发明人： WANG PEI-JIH , CHANG PAN-TZU , KO BUNKETSU
IPC分类号： H01J1/62 , H01L25/075 , H01L33/02 , H01L33/48 , H01L33/00
CPC分类号： H01L25/0756 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a full color light emitting diode in which a work of packaging can be advanced promptly, and three kinds of colors are hard to be distinguished even if they are watched from a short distance.
SOLUTION: The diode comprises a base consisting of a red light emitting diode chip 21, and a blue light emitting diode chip 22 and a green light emitting diode chip 23 which constitute a formation of the full color light emitting diode 2 by securing a discharging surface 211 of the red light emitting diode chip 21 in such a way that they are combined in overlap on the above-mentioned red light emitting diode chip 21 as independent luminescence units, and do not completely intercept the red light emitting diode chip 21.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供可快速提升包装工作的全彩色发光二极管，并且即使从短距离观看也难以区分三种颜色。解决方案：二极管包括由红色发光二极管芯片21和蓝色发光二极管芯片22和绿色发光二极管芯片23构成的基座，其通过固定来构成全色发光二极管2的形成红色发光二极管芯片21的放电表面211以它们作为独立发光单元在上述红色发光二极管芯片21上重叠地组合，并且不完全拦截红色发光二极管芯片21 （C）2005，JPO＆NCIPI

4. 发明专利

JP2005123589A Light emitting device having transparent conductive layer 审中-公开
标题翻译：具有透明导电层的发光装置
公开(公告)号：JP2005123589A
公开(公告)日：2005-05-12
申请号：JP2004249049
申请日：2004-08-27
申请人： Arima Optoelectronics Corp , 華上光電股▲分▼有限公司
发明人： CHANG PAN-TZU , SUNG YING-CHE
IPC分类号： H01L21/24 , H01L27/15 , H01L33/38 , H01S5/028 , H01L33/00
CPC分类号： H01L33/387
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device having a high transmittance in the light emitting device provided with an ohm electrode. SOLUTION: The light emitting device is provided with a substrate 21, a junction structure comprising an n-type semiconductor layer 22 and a p-type semiconductor layer 23 which are formed on a front surface of the substrate 21, and an n electrode 24 formed on the n-type semiconductor layer 22. On the p-type semiconductor layer 23 there are provided an ohmic contact distribution layer 25 configured by any one configuration of a lot of punctiform states 25a, meshes 25b, or honeycomb forms 25c; and a transparent conductive layer 26 put on the ohmic contact distribution layer 25. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种在设置有欧姆电极的发光器件中具有高透射率的发光器件。解决方案：发光器件设置有基板21，包括形成在基板21的前表面上的n型半导体层22和p型半导体层23的结结构，n 形成在n型半导体层22上的电极24.在p型半导体层23上设置欧姆接触分布层25，该欧姆接触分布层25由点状状态25a，网眼25b或蜂窝状形式25c的任意一种构造构成。以及放置在欧姆接触分布层25上的透明导电层26.（C）2005，JPO＆NCIPI

5. 发明专利

JP2005123585A InGaN LIGHT EMITTING DIODE STRUCTURE 审中-公开
标题翻译： InGaN发光二极管结构
公开(公告)号：JP2005123585A
公开(公告)日：2005-05-12
申请号：JP2004240972
申请日：2004-08-20
申请人： Arima Optoelectronics Corp , 華上光電股▲分▼有限公司
发明人： SUNG YING-CHE , CHANG PAN-TZU , HSU LI-MIN , TSENG WEN-HUANG
IPC分类号： H01L27/15 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/00
CPC分类号： H01L33/0079
摘要： PROBLEM TO BE SOLVED: To provide an InGaN light emitting diode structure capable of increasing emission luminance, extending useful life, and enhancing the efficiency of manufacture and usage. SOLUTION: A crystal lamination 1 of a blue light emitting diode is grown on an Al 2 O 3 substrate. When the Al 2 O 3 substrate is peeled off after the crystal lamination 1 is grown, the formation of the structure is completed, and an electrically conductive contact pole 3 is formed on the surface from which the substrate is peeled off. At least one electrically conductive contact terminal 4 is formed on the surface of the top edge portion of the crystal lamination 1. A surrogate substrate 5 consists of any one of chromium, wolfram, molybdenum, copper, copper chromium alloy, copper molybdenum alloy, or copper wolfram alloy, etc. and is joined to the top of the crystal lamination 1 of the blue light emitting diode and connected to the electrically conductive contact terminal 4. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供能够增加发光亮度，延长使用寿命并提高制造和使用效率的InGaN发光二极管结构。解决方案：将蓝色发光二极管的晶体层压体1在Al 2 SB 3 O 3 / SB>衬底上生长。在晶体层叠1生长之后，当Al 2 > 衬底剥离时，结构的形成完成，导电接触极3形成在剥离基板的表面。至少一个导电接触端子4形成在晶体层叠体1的顶部边缘部分的表面上。替代基板5由铬，钨，钼，铜，铜铬合金，铜钼合金或铜钨合金等，并且连接到蓝色发光二极管的晶体层叠1的顶部并连接到导电接触端子4.版权所有（C）2005，JPO＆NCIPI

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