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    • 1. 发明专利
    • High brightness garium nitride light emitting diode
    • 高亮度氮化钠发光二极管
    • JP2007103712A
    • 2007-04-19
    • JP2005292356
    • 2005-10-05
    • Arima Optoelectronics Corp華上光電股▲分▼有限公司
    • KO BUNKETSU
    • H01L33/32H01L33/36
    • PROBLEM TO BE SOLVED: To provide a high brightness GaN light emitting diode which raises the brightness-conductivity characteristic. SOLUTION: The diode comprises a light-permeable insulation substrate 116, a first lower GaN binding layer 15 of a first conductivity type formed on the insulation substrate 116, an InGaN light emitting layer 13 formed on the binding layer 15, a second upper GaN binding layer 12 of a second conductivity type formed on the light emitting layer 13, a GaN contact layer 17A of a gallium-rich phase formed on the second upper binding layer 12, an AlGaInSnO photoconductive layer 11B formed on the contact layer 17A, a first electrode 14 formed in the exposed section of the first lower binding layer 15, and a second electrode 10 formed on the photoconductive layer 11B. The contact layer 17A forms a stable contact surface with the photoconductive layer 11B, and the contact surface reduces the ohmic contact electric resistance and raises the light emitting efficiency and the reliability. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供提高亮度 - 导电特性的高亮度GaN发光二极管。 解决方案:二极管包括透光绝缘基板116,形成在绝缘基板116上的第一导电类型的第一下部GaN结合层15,形成在结合层15上的InGaN发光层13,第二导电类型 形成在发光层13上的第二导电类型的上部GaN结合层12,形成在第二上层粘合层12上的富镓相的GaN接触层17A,形成在接触层17A上的AlGaInSnO光电导层11B, 形成在第一下部粘合层15的暴露部分中的第一电极14和形成在光电导层11B上的第二电极10。 接触层17A与光电导层11B形成稳定的接触表面,并且接触表面减小了欧姆接触电阻并提高了发光效率和可靠性。 版权所有(C)2007,JPO&INPIT