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    • 1. 发明专利
    • Photoelectric spectrograph and surface analyzing method
    • 光电光谱和表面分析方法
    • JPH11281597A
    • 1999-10-15
    • JP7984098
    • 1998-03-26
    • Agency Of Ind Science & TechnolNikon Corp工業技術院長株式会社ニコン
    • TOMIE TOSHIHISASHIMIZU HIDEAKIKONDO HIROYUKIKAMITAKA NORIAKI
    • G01N23/227G21K5/02H05G2/00
    • PROBLEM TO BE SOLVED: To measure a plurality of elements or chemical states with a high energy resolution, by arranging an X-ray wavelength selection member for transmitting and reflection X rays with a specific wavelength between an X-ray source and a sample, and simultaneously applying X rays with a plurality of different wavelengths whose band is narrowed onto the sample.
      SOLUTION: A laser beam 103 that is emitted from a pulse laser device 100 is condensed on a tape-shaped target 106 by a lens 104, turns a target material into plasma, and radiates X rays. The tape-shaped target 106 is taken up by a reel 116 and can travel in the direction of A. X rays being emitted from a plasma 107 are transmitted through an X-ray transmission filter 109 and then are condensed on a sample by a Walter mirror 110. A photoelectron emitted from the surface of a sample 111 passes a flight tube that is covered with a magnetic-shielding material 113 and is detected by a micro channel plate(MCP) 14 and then the two-dimensional distribution and the depth-dimension distribution of an element or chemical state can be calculated by an operation device.
      COPYRIGHT: (C)1999,JPO
    • 要解决的问题:为了通过在X射线源和样本之间设置用于透射和反射具有特定波长的X射线的X射线波长选择构件,以高能量分辨率来测量多个元件或化学状态,以及 同时将具有多个不同波长的X射线施加到样品上。 解决方案:从脉冲激光装置100发射的激光束103通过透镜104会聚在带状靶106上,将靶材转变为等离子体,并照射X射线。 带状靶106被卷轴116吸收并且可沿着A方向移动。从等离子体107发射的X射线通过X射线透射滤光器109透射,然后通过Walter在样品上冷凝 从样品111的表面发射的光电子通过被磁屏蔽材料113覆盖的飞行管,并由微通道板(MCP)14检测,然后二维分布和深度 - 元件或化学状态的尺寸分布可由操作装置计算。
    • 2. 发明专利
    • Multilayered film mirror and exposure system
    • 多层膜镜和曝光系统
    • JP2007057450A
    • 2007-03-08
    • JP2005245269
    • 2005-08-26
    • Nikon Corp株式会社ニコン
    • KAMITAKA NORIAKI
    • G21K1/06G02B5/08G03F7/20G21K5/04H01L21/027
    • PROBLEM TO BE SOLVED: To provide a multilayered film mirror with high reflectivity, small stress and small total film thickness. SOLUTION: The multilayered film mirror of this invention is constituted of a multilayered film which is a stack of a pair of layers consisting of layers (105, 109) containing molybdenum and layers (103, 107) containing silicon, on a substrate. When let the fraction of thickness of layer containing molybdenum to the thickness of the pair of layers, a Γ value, the multilayered film includes the first pair of layers (103, 105) whose range of Γ value is determined from the reflectivity and the second pair of layers (107, 109) whose range of the Γ value is determined so as to have a stress with opposite sign to the stress that the first pair of layers has. The total number of the pair of the multilayered film is 60 or less. The Γ value of the first pair of layers and the Γ value of the second pair of layers, the number of the first pair of layers and the number of the second pair of layers are determined so that the reflectivity of the whole multilayered film is maximized, the stress that the first pair of layers has and the stress that the second pair of layers has are canceled and the stress that the whole multilayered film has is made the minimum. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:提供具有高反射率,小应力和小的总膜厚度的多层膜反射镜。 解决方案:本发明的多层膜反射镜由多层膜构成,该多层膜是由包含钼的层(105,109)和包含硅的层(103,107)组成的一叠层的叠层,在基板 。 当使包含钼的层的厚度的一部分相对于一对层的厚度为Γ值时,多层膜包括从反射率确定Γ值的范围的第一对层(103,105),第二层 一对层(107,109),其Γ值的范围被确定为具有与第一对层具有的应力相反的应力。 一对多层膜的总数为60个以下。 确定第一对层的Γ值和第二对层的Γ值,第一对层的数量和第二对层的数量,使得整个多层膜的反射率最大化 第一层所具有的应力和第二对层的应力被消除,整个多层膜的应力被最小化。 版权所有(C)2007,JPO&INPIT
    • 3. 发明专利
    • Multilayer reflection mirror and exposure system
    • 多层反射镜和曝光系统
    • JP2006194764A
    • 2006-07-27
    • JP2005007542
    • 2005-01-14
    • Nikon Corp株式会社ニコン
    • KAMITAKA NORIAKI
    • G21K1/06G02B5/08G03F7/20G21K5/02H01L21/027
    • PROBLEM TO BE SOLVED: To provide a multilayer reflection mirror and exposure system capable of suppressing light quantity loss of reflection light even with simplification of fabrication os the surface (formation surface of the multilayer film) of a base plate. SOLUTION: In a multilayer reflection mirror, a multilayer film reflecting light in soft X-ray region is formed on the surface of the base plate. RMS value of coarseness of the surface should be that the first coarseness component derived from the structure of spacial period 10 nm to 100 nm (coarseness component of a range B of which the spatial frequency (f) is larger than about 0.01/nm) is larger than the second coarseness component (coarseness component of a range A of which the spatial frequency (f) is smaller than about 0.01/nm) derived from the structure of spatial period 100 mn to 1,000 nm. COPYRIGHT: (C)2006,JPO&NCIPI
    • 解决问题:即使简化制造基板的表面(多层膜的形成面),也能够提供能够抑制反射光的光量损失的多层反射镜和曝光系统。 解决方案:在多层反射镜中,在基板的表面上形成反射软X射线区域的光的多层膜。 表面粗糙度的RMS值应该是从空间周期10nm到100nm的结构导出的第一粗糙度分量(空间频率(f)大于约0.01 / nm的范围B的粗糙度分量)是 大于第二粗糙度分量(由空间频率(f)小于约0.01 / nm的范围A的粗糙度分量)衍生自空间周期100nm至1000nm的结构。 版权所有(C)2006,JPO&NCIPI
    • 4. 发明专利
    • Film deposition apparatus, film deposition method, multilayer film reflection mirror and euv exposure device
    • 膜沉积装置,膜沉积方法,多层膜反射镜和EUV曝光装置
    • JP2006183093A
    • 2006-07-13
    • JP2004377728
    • 2004-12-27
    • Nikon Corp株式会社ニコン
    • KAMITAKA NORIAKI
    • C23C14/54C23C14/46G02B5/08G03F7/20G21K1/06G21K5/02H01L21/027
    • PROBLEM TO BE SOLVED: To provide a multilayer film reflection mirror having the desired multilayer film period length, and its manufacturing apparatus (a film deposition apparatus).
      SOLUTION: Contribution of an inner surface of an aperture as a shielding part is d×sinθ, where d denotes the thickness of a film thickness correction plate, and θ denotes an angle of inclination. When the thickness is 0.5 mm, and the film thickness correction plate is inclined by 30°, the aperture ratio is reduced to about 71% compared with a case in which the film thickness correction plate is not inclined. When the thickness is reduced to 0.4 mm by grinding a part of the film thickness correction plate, the reduction range of the aperture ratio is reduced and the aperture ratio is reduced to about 77% compared with a case in which the film thickness correction plate is not inclined. The thickness of a center portion is 0.5 mm, the thickness is gradually reduced toward a peripheral part, and if the thickness is 0.4 mm in an outermost peripheral part, the film thickness correction plate is inclined by 30°, film deposition can be performed while the aperture ratio of the peripheral part is larger by about 8% than that of the peripheral part.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供具有期望的多层膜周期长度的多层膜反射镜及其制造装置(成膜装置)。 解决方案:孔的内表面作为屏蔽部分的贡献是d×sinθ,其中d表示膜厚校正板的厚度,θ表示倾斜角。 当厚度为0.5mm,并且膜厚校正板倾斜30°时,与膜厚校正板不倾斜的情况相比,开口率减小到约71%。 当通过研磨膜厚校正板的一部分将厚度减小到0.4mm时,与膜厚校正板的情况相比,开口率的减小范围减小,开口率降低至约77% 不倾向 中心部的厚度为0.5mm,朝向周边部分逐渐变薄,如果最外周部的厚度为0.4mm,则膜厚校正板倾斜30°,可以进行成膜,同时 周边部的开口率比周边部的开口率大8%左右。 版权所有(C)2006,JPO&NCIPI
    • 5. 发明专利
    • Irradiating light quantity measuring instrument and euv exposing device
    • 辐射轻量测量仪器和EUV曝光装置
    • JP2006173365A
    • 2006-06-29
    • JP2004363915
    • 2004-12-16
    • Nikon Corp株式会社ニコン
    • MURAKAMI KATSUHIKOKAMITAKA NORIAKI
    • H01L21/027G01T1/28G03F7/20G21K5/00
    • PROBLEM TO BE SOLVED: To provide an irradiating light quantity measuring instrument that can accurately measure the quantity of EUV light irradiated upon a surface to be irradiated even if contamination easily adheres to the surface irradiated by EUV.
      SOLUTION: On the surface of a mirror substrate 1, a multilayered film 2 is formed to cover the effective area 4 of a mirror. Since an ammeter A1 is electrically connected to the multilayered film 2, the photoelectronic current discharged when the EUV light is made incident can be measured. The EUV light made incident to the mirror is made incident to an EUV light incident range 5 which is slightly wider than the effective area 4. In the EUV light incident range 5, a photoelectron detecting thin film 3 is formed outside the effective area 4. Since another ammeter A2 is electrically connected to the thin film 3, the photoelectronic current discharged when the EUV light is made incident can be measured. Since the ammeters A1 and A2 are used for measuring the photoelectronic currents, the irradiated quantity of the EUV light can be measured accurately by compensating the influence of adhered contamination.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:提供一种能够精确地测量照射在被照射的表面上的EUV光的量的照射光量测量仪器,即使污染容易粘附在被EUV照射的表面上。 解决方案:在镜面基板1的表面上,形成多层膜2以覆盖反射镜的有效区域4。 由于电流表A1与多层膜2电连接,因此可以测定在使EUV光入射时放电的光电流。 入射到反射镜的EUV光入射到比有效面积4稍宽的EUV光入射范围5.在EUV光入射范围5中,在有效区域4的外部形成光电子检测薄膜3。 由于另一个电流表A2电连接到薄膜3,所以可以测量当EUV光入射时放电的光电流。 由于使用电流表A1和A2来测量光电流,因此可以通过补偿附着污染的影响来精确地测量EUV光的照射量。 版权所有(C)2006,JPO&NCIPI