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1. 发明专利

JPS59151421A Laser annealing device 失效
标题翻译：激光退火装置
公开(公告)号：JPS59151421A
公开(公告)日：1984-08-29
申请号：JP2380683
申请日：1983-02-17
申请人： Agency Of Ind Science & Technol
发明人： YOSHII TOSHIO
IPC分类号： H01L21/20 , H01L21/26 , H01L21/268
CPC分类号： H01L21/26
摘要： PURPOSE:To obtain the semiconductor crystal layer of superior quality on an amorphous insulator by a method wherein, when an annealing is performed by projecting a laser beam on the semiconductor layer such as polycrystalline Si and the like, the center point of beam intensity on a sample is pluralized using a lens system, and recrystallization is started from said center points. CONSTITUTION:The laser beam emitted from a continuous oscillation type Ar ion laser light source 11 is made irradiate on a reflecting mirror 13 through the intermediary of a shutter 12 to be used for ON-OFF operation, said laser beam is reflected by a relfecting mirror 14, and it is forcussed by a lens system 15 and projected on the sample 16 located on a sample stage 17. At this time, the reflecting mirrors 13 and 14 are installed on a galvanometer respectively, and the beam is scanned in X-Y direction in a swinging manner. According to this constitution, a lens system 15 wherein a plurality of convex lenses are plane-arranged is provided in the optical path of the beam which is made incident on the sample 16, thereby enabling to generate the point having the maximum beam intensity by the help of respective lense. Thus, the recrystallization which is ordinarily starting from the circumference of the sample 16 is started from the point having maximum beam intensity.
摘要翻译：目的：通过以下方法获得具有优异质量的半导体晶体层：通过在诸如多晶Si等的半导体层上投射激光而进行退火的方法中，将光束强度的中心点使用透镜系统对样品进行多元化，并且从所述中心点开始重结晶。结构：从连续振荡型Ar离子激光光源11发射的激光束通过中央的快门12照射到反射镜13上，用于开关操作，所述激光束被反射镜反射并且由透镜系统15进行打击并投影到位于样品台17上的样品16上。此时，将反射镜13和14分别安装在检流计上，并将光束在XY方向扫描摇摆的方式根据该结构，在入射到样品16上的光束的光路中设置有平面布置多个凸透镜的透镜系统15，从而能够通过该光束强度产生具有最大光束强度的点帮助各自的镜头。因此，通常从样品16的圆周开始的重结晶从具有最大束强度的点开始。

2. 发明专利

JPS6163018A Manufacture of semiconductor thin film crystal layer 失效
标题翻译：半导体薄膜晶体层的制造
公开(公告)号：JPS6163018A
公开(公告)日：1986-04-01
申请号：JP18373084
申请日：1984-09-04
申请人： Agency Of Ind Science & Technol
发明人： YOSHII TOSHIO
IPC分类号： H01L21/20 , H01L21/263 , H01L21/84 , H01L27/00
CPC分类号： H01L21/2022
摘要： PURPOSE:To bring down the energy required for an annealing to be performed on the aperture part of the titled crystal layer as well as to enable to form a single crystal semiconductor thin film layer, having excellent crystallizability and surface flatness, on an insulating film by a method wherein a semiconductor having the melting point lower than that of a substrate is formed in advance on the substrate of the aperture part. CONSTITUTION:A single crystal semiconductor substrate 1 is oxidized by heat, and after an insulating film 2 is formed on the substrate 1, an aperture 3 is formed on a part of the film 2. Then, the prescribed pretreatment is performed, a sample is placed in a vapor-phase growing device, gas is introduced into a hydrogen gas atmosphere, a Ge film 4 is epitaxially grown selectively on the substrate 1 only of the aperture part 3, and then a polycrystalline Si film 5 is coated thereon by performing a vapor-phase growing method. Then, an electron beam 6 is made to irradiate on the surface of the sample, films 4 and 5 are fused and solidified, and an epitaxially-grown layer 7 is grown in lateral direction from the aperture part 3.
摘要翻译：目的：降低在标准晶体层的开口部分进行退火所需的能量，并且能够形成具有优异结晶性和表面平坦度的单晶半导体薄膜层，在绝缘膜上由预先在孔部的基板上形成熔点低于基板的半导体的方法。构成：单晶半导体衬底1被热氧化，并且在基板1上形成绝缘膜2之后，在膜2的一部分上形成孔3，然后进行规定的预处理，样品为放置在气相生长装置中，将气体引入氢气气氛中，仅在孔部3的基板1上选择性地外延生长Ge膜4，然后通过进行多晶Si膜5 气相生长法。然后，使电子束6照射在样品的表面上，将薄膜4和5熔融固化，并且从开口部3沿横向生长外延生长层7。

3. 发明专利

JPS61125122A Manufacture of semiconductor thin film crystal layer 失效
标题翻译：半导体薄膜晶体层的制造
公开(公告)号：JPS61125122A
公开(公告)日：1986-06-12
申请号：JP24631184
申请日：1984-11-22
申请人： Agency Of Ind Science & Technol
发明人： YOSHII TOSHIO
IPC分类号： H01L21/20 , H01L21/263 , H01L21/84
CPC分类号： H01L21/2022
摘要： PURPOSE:To make the single crystallization of a semiconductor thin film easy by a method wherein an aperture provided in an insulating film as plural island regions and supplying required energy to fuse aperture from around the island regions. CONSTITUTION:A silicon oxide film 12 is formed on a silicon substrate 11 and an aperture 13 is formed in the film 12. The plural apertures 13 are formed around a single-crystallized region 20. Then, a polycrystalline silicon film 14 is deposited on all the surface. Then, the film 14 is fused and crystallized again using an electron beam 15 and a silicon single crystal layer 14' is formed. Since the aperture 13 is formed in an island state, thermal energy is supplied from all directions by beam irradiation and the silicon of the aperture is easily fused.
摘要翻译：目的：为了使半导体薄膜的单一结晶容易，其中设置在绝缘膜中的孔作为多个岛状区域，并提供所需的能量来熔化来自岛状区域的孔。构成：在硅衬底11上形成氧化硅膜12，并且在膜12中形成孔13.多个孔13形成在单结晶区20周围。然后，多晶硅膜14沉积在所有表面。然后，使用电子束15再次熔融并结晶薄膜14，形成硅单晶层14'。由于孔13形成为岛状，因此通过束照射从各个方向供给热能，并且孔的硅容易熔融。

4. 发明专利

JPS6143409A Manufacture of semiconductor thin film crystal layer 失效
标题翻译：半导体薄膜晶体层的制造
公开(公告)号：JPS6143409A
公开(公告)日：1986-03-03
申请号：JP16490784
申请日：1984-08-08
申请人： Agency Of Ind Science & Technol
发明人： YOSHII TOSHIO
IPC分类号： H01L21/20 , H01L21/263 , H01L21/268
摘要： PURPOSE: To easily form a semiconductor thin film crystal layer as well as to improve the characteristics of the element located on the crystal layer by a method wherein a laser beam, to be used to heat up the insulating layer which is the base of the thin film, is used separately from the laser beam which is made to irradiate on the semiconductor thin film to be annealed.
CONSTITUTION: A polycrystalline Si thin film 3 is formed on a single crystal Si substrate 1 through the intermediary of an SiO
2 layer 2, and a sample 4 is manufactured. Said sample 4 is placed on a silicon base stand 5, a CW-Ar laser beam 6 is made to irrdaite on the Si thin film 3 of a material 4, and the Si thin film 3 is annealed. Also, another CW-CO
2 laser beam 7 is made to irradiate from the lower part of the base stand 5, and SiO
2 layer 2 on the substrate 1 is heated up. The generation of lattice defect caused by the quick cooling of the thin film 3 is prevented, and the characteristics of the element to be formed on the crystal layer is improved.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：为了容易地形成半导体薄膜晶体层，并且通过以下方法改善位于晶体层上的元件的特性，其中激光束用于加热作为薄的基底的绝缘层薄膜与被照射在要退火的半导体薄膜上的激光束分开使用。构成：通过SiO 2层2的中间，在单晶Si衬底1上形成多晶Si薄膜3，制造样品4。将所述样品4放置在硅基架5上，使CW-Ar激光束6对材料4的Si薄膜3进行不规则处理，并且使Si薄膜3退火。此外，使另一个CW-CO 2激光束7从基座5的下部照射，并且将基板1上的SiO 2层2加热。防止由薄膜3的快速冷却引起的晶格缺陷的产生，并且提高在晶体层上形成的元件的特性。

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