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1. 发明专利

JPS59203795A Apparatus provided with magnetic field generating apparatus for preparing semiconductor single crystal 失效
标题翻译：提供用于制备半导体单晶的磁场生成装置的装置
公开(公告)号：JPS59203795A
公开(公告)日：1984-11-17
申请号：JP7890183
申请日：1983-05-07
申请人： Agency Of Ind Science & Technol
发明人： TERAJIMA KAZUTAKA , FUKUDA TSUGUO
IPC分类号： C30B15/00 , C30B15/20 , C30B15/30 , G01K7/02 , H01L21/02 , H01L21/208
CPC分类号： C30B15/305
摘要： PURPOSE:To enable exact control of melt temp. and to prepare semiconductor single crystal of high quality by providing a compensation means which generates an electromotive force for compensating the electromotive force generated by the impression of magnetic field to a thermocouple for controlling the temp. of the melt of starting material provided to the bottom surface of a crucible. CONSTITUTION:Starting materials for the crystal and a sealing material are melted in a crucible 3 provided in a high pressure vessel and a layer of the liquid sealing material 6 is formed in the upper part of the crucible and a melt layer 5 of the starting material of the crystal is formed in the bottom of the crucible. A seed crystal 7 is brough into contact with the melt and pulled up at a specified speed while rotating the seed crystal. The crucible 3 is rotated in this stage in the opposite direction to the rotating direction of the seed crystal 7. Magnetic field B is impressed to the melt 5 during the growth of the crystal, but an electromotive force E1 is generated by the effect of the magnetic field B in a thermocouple 12 which forms a loop 15. Therefore, a loop 16 of the reverse direction is formed as a compensation means using another component of the metallic wire 12b of the thermocouple 12 against the loop 15, and a cross point 17 of loops 15, 16 is insulated electrically with a heat resistant insulator. Thus, the electromotive force E1 is compensated by the electromotive force E2 generated in the loop 16.
摘要翻译：目的：确保熔体温度的精确控制。并且通过提供补偿装置来制备高品质的半导体单晶，该补偿装置产生用于将由磁场产生的电动势补偿到用于控制温度的热电偶产生的电动势。提供给坩埚底表面的起始材料的熔体。构成：用于晶体和密封材料的原料在设置在高压容器中的坩埚3中熔化，并且液体密封材料6的层形成在坩埚的上部，并且起始材料的熔融层5 的晶体形成在坩埚的底部。种子晶体7与熔体接触并在旋转晶种的同时以特定速度上拉。坩埚3在该阶段沿与晶种7的旋转方向相反的方向旋转。在晶体生长期间，磁场B向熔体5施加压力，但是通过效应使电动势E1产生形成环15的热电偶12中的磁场B.因此，使用热电偶12的金属线12b的另一部件抵靠环15形成反向回路16作为补偿装置，并且交叉点17 环15,16与耐热绝缘体电绝缘。因此，电动势E1由在环路16中产生的电动势E2补偿。

2. 发明专利

JPS59199597A Apparatus for producing single crystal 失效
标题翻译：生产单晶的装置
公开(公告)号：JPS59199597A
公开(公告)日：1984-11-12
申请号：JP7303783
申请日：1983-04-27
申请人： Agency Of Ind Science & Technol
发明人： TERAJIMA KAZUTAKA , FUKUDA TSUGUO
IPC分类号： C30B15/00 , C30B15/30 , H01F6/00
CPC分类号： C30B15/305
摘要： PURPOSE:To perform various operations of a crystal pulling apparatus, safely and efficiently, by using an apparatus to generate superconducting magnetic field for imposing magnetic field near the interface of the molten raw material of the crystal, and placing the apparatus movably relative to the crystal pulling apparatus. CONSTITUTION:A pair of superconducting magnets 12 are placed at both sides of the stationary crystal pulling apparatus 11, and are supported by the supporting tools 13. Each supporting tool 13 is furnished with wheels 14 to enable the traverse of the magnet 12 on a pair of rails 15 laid in parallel at both sides of the pulling apparatus 11. The supporting tools 13 are connected together with a horizontal bar 17. The superconducting magnets 12 can be freely moved reltive to the crystal pulling apparatus 11 by this arrangement, and the operation of the crystal pulling apparatus can be facilitated.
摘要翻译：目的：通过使用在晶体熔融原料界面附近产生磁场的超导磁场的装置，安全有效地进行晶体拉制装置的各种操作，并将装置相对于晶体移动牵引装置。构成：一对超导磁体12被放置在固定晶体拉制装置11的两侧，并被支撑工具13支撑。每个支撑工具13都配有轮子14，以使磁体12能够一对移动在牵引装置11的两侧平行布置的轨道15。支撑工具13通过水平杆17连接在一起。通过这种布置，超导磁体12可以相对于晶体拉制装置11自由移动，并且操作的拉晶装置。

3. 发明专利

JPS59164699A Preparation of ga-as single crystal 失效
标题翻译： GA-AS单晶的制备
公开(公告)号：JPS59164699A
公开(公告)日：1984-09-17
申请号：JP3832183
申请日：1983-03-10
申请人： Agency Of Ind Science & Technol
发明人： KATSUMATA TOORU , TERAJIMA KAZUTAKA , FUKUDA TSUGUO
IPC分类号： C30B27/02 , C30B15/00 , C30B29/42
CPC分类号： C30B15/00 , C30B29/42
摘要： PURPOSE:To prepare a Ga-As single crystal of high quality having uniform characteristics of resistance distribution contg. no growth striation and uniform distribution of dislocation, etc. by adjusting a proportion of Ga to As in the melt of a raw material to a proportion of the compsn. of the congruent, and pulling out thereafter a single crystal through a liquid sealing material. CONSTITUTION:An evaporation loss of As is calculated from precise measurements of the amt. of starting materials, i.e. Ga and As to be mixed, the weight of pulled up single crystal, and the weight of the remaining melt of the starting materials. The starting materials are adjusted wherein a Ga-As melt admixed with excessive As exceeding the evaporated loss is decompressed from the pressure applied thereon to 1 atm by maintaining its temp. at the melting point. The excessive As is vaporized, and when the vaporization ceases, namely, when generation of foams from the melt is ended, a congruent compsn. is formed from the melt. The seed crystal is allowed to contact with the melt in this state, and a Ga-As single crystal is grown by the pulling up operation of the crystal. In this case, a high pressure sealing pulling up method is adopted using B2O3 as the sealing liquid.
摘要翻译：目的：制备具有均匀电阻分布特性的高品质Ga-As单晶。通过将原料熔体中的Ga与As的比例调整到比例的比例，无增长条纹和位错均匀分布等。的一次性，然后通过液体密封材料拉出单晶。构成：由Amt的精确测量计算As的蒸发损失。的起始材料，即混合的Ga和As，拉起的单晶的重量，以及原料的剩余熔体的重量。调整起始材料，其中与过量的超过蒸发损耗的Ga-As熔体通过保持其温度从施加在其上的压力减压至1atm。在熔点。过量的As被蒸发，当蒸发停止时，即当熔体发生泡沫结束时，一致的组成。由熔体形成。在该状态下使晶种与熔体接触，并且通过晶体的上拉操作生长Ga-As单晶。在这种情况下，采用B2O3作为密封液的高压密封拉拔方法。

4. 发明专利

JPS59131597A Production of high-quality gallium arsenide single crystal 失效
标题翻译：生产高品质的阿拉伯单晶水晶
公开(公告)号：JPS59131597A
公开(公告)日：1984-07-28
申请号：JP518183
申请日：1983-01-18
申请人： Agency Of Ind Science & Technol
发明人： TERAJIMA KAZUTAKA , FUKUDA TSUGUO
IPC分类号： C30B15/00 , C30B15/30 , C30B27/02 , C30B29/42 , H01L21/208
CPC分类号： C30B15/305
摘要： PURPOSE:To produce a high-quality GaAs single crystal in high stability, by synthesizing molten GaAs in a crucible under high pressure, contacting a seed crystal to the molten liquid, and pulling the crystal under a strong magnetic field. CONSTITUTION:The crucible 3 placed in the pressure vessel 1 contains a molten B2O3 layer 6 as a liquid encapsulation agent and a molten GaAs layer 5 under the encapsulation layer 6. The pressure in the vessel 1 is decreased to
摘要翻译：目的：通过在高压下将坩埚中的熔融砷合成，使晶种与熔融液接触，并在强磁场下拉晶，生产高稳定性的高质量GaAs单晶。构成：放置在压力容器1中的坩埚3含有作为液体封装剂的熔融B 2 O 3层6和在封装层6下方的熔融GaAs层5.容器1中的压力降低至<= 5atm以蒸馏净化熔融的GaAs 5.拉伸轴8降低以与熔融的GaAs 5接触晶种7，并且通过磁场发生器11施加强磁场，以抑制熔融液体5中的对流。晶种7在磁场中旋转一定的旋转速度被拉起，以实现GaAs晶体的生长。可以通过该方法使固体和液体之间的界面平滑，并且可以获得没有生长条纹的高质量半绝缘GaAs单晶。

5. 发明专利

JPS59131593A Apparatus for producing compound semiconductor single crystal 失效
标题翻译：用于生产化合物半导体单晶的装置
公开(公告)号：JPS59131593A
公开(公告)日：1984-07-28
申请号：JP518283
申请日：1983-01-18
申请人： Agency Of Ind Science & Technol
发明人： TERAJIMA KAZUTAKA , FUKUDA TSUGUO
IPC分类号： C30B15/14 , C30B27/02 , C30B29/40 , C30B30/04 , H01L21/208
CPC分类号： C30B15/14
摘要： PURPOSE:To prevent the damage of a heating furnace in the case of using AC electrical source for the application of magnetic field, by reinforcing the heater of the resistance heater of the titled apparatus with a reinforcing member. CONSTITUTION:The objective apparatus for producing a compound semiconductor single crystal by pulling method is composed of a pressure vessel 1 and a device 6 for applying magnetic field placed at the circumference of the pressure vessel 1, wherein the heater 7 arranged to the side of the resistance heating furnace 3 is reinforced directly with an insulating reinforcing member such as alumina, etc. First, the top of the heater 7 is reinforced with a U-shaped reinforcing member 2a. The lower part of the heater 7 is reinforced by fitting a ring reinforcing member 12b to the outer surface and the bottom of the heater, and fitting another ring reinforcing member 12c to the lower part of the inner surface of the heater 7. Since both edges of the heater 7 are fixed with the reinforcing members 12a-12c, the fatigue of the heater is suppressed even by applying alternate or pulse magnetic field, and the breakage of the heater 7 can be prevented.
摘要翻译：目的：为了防止在使用交流电源施加磁场的情况下加热炉的损坏，通过用加强件加强标称装置的电阻加热器的加热器。构成：通过牵引方法制造化合物半导体单晶的目标装置由压力容器1和用于施加放置在压力容器1的周边的磁场的装置6组成，其中设置在压力容器1的侧面的加热器7 电阻加热炉3直接用绝缘加强构件例如氧化铝等加强。首先，加热器7的顶部用U形加强构件2a加强。加热器7的下部通过将环形加强构件12b装配到加热器的外表面和底部而加强，并且将另一个环形加强构件12c安装到加热器7的内表面的下部。由于两个边缘加热器7与加强件12a-12c固定，甚至通过施加交替或脉冲磁场来抑制加热器的疲劳，并且可以防止加热器7的断裂。

6. 发明专利

JPS5957993A Manufacture of single crystal of semiconductor of iii-v group compound 失效
标题翻译： III-V族化合物半导体单晶的制备
公开(公告)号：JPS5957993A
公开(公告)日：1984-04-03
申请号：JP16764882
申请日：1982-09-28
申请人： Agency Of Ind Science & Technol
发明人： ORITO FUMIO , TERAJIMA KAZUTAKA , FUKUDA TSUGUO
IPC分类号： C30B27/02 , C30B15/36 , C30B29/40 , H01L21/208
CPC分类号： C30B15/36
摘要： PURPOSE:To obtain a high-quality crystal having a uniform distribution of dislocation in the manufacture of a single crystal of a III-V group compound by a liq. sealing and pulling method, by carrying out crystal growth while covering the surface of a seed crystal and the surface of a formed crystal with a liq. sealant. CONSTITUTION:Starting materials for a crystal such as Ga and As and starting materials for a sealant are charged into a crucible 3, and starting materials for the sealant are charged into a container 14 placed around a shaft 5 with a small gap in-between at an inter-mediate part in the iongitudinal direction. An inert gas is introduced into a pressure vessel from an introducing pipe 9, and the starting materials in the crucible 3 and the starting materials in the container 14 are melted with a heater 2. Crystal growth is then carried out by pulling up the shaft 5 having a seed crystal 8 attached to the lower end while rotating the shaft 5. The liq. sealant melted in the container 14 flows downward from the gap between the container 14 and the shaft 5 and covers the surface of the seed crystal 8 and the surface of a formed crystal.
摘要翻译：目的：通过液相制备III-V族化合物的单晶，获得具有均匀位错分布的高质量晶体。密封和拉伸方法，通过在用晶种覆盖晶种表面和形成晶体的表面的同时进行晶体生长。密封胶。构成：将用于晶体的原料如Ga和As以及用于密封剂的起始材料装入坩埚3中，并将用于密封剂的起始材料装入围绕轴5的容器14中，其间具有小的间隙在离子方向的中间部分。将惰性气体从引入管9引入压力容器中，将坩埚3中的起始材料和容器14中的起始材料用加热器2熔化。然后通过将轴5拉起来进行晶体生长具有在旋转轴5的同时附接到下端的晶种8。在容器14中熔化的密封剂从容器14和轴5之间的间隙向下流动并覆盖晶种8的表面和形成晶体的表面。

7. 发明专利

JPS59203793A Preparation of semiinsulative ga-as single crystal 失效
标题翻译：半乳糖GA-AS单晶的制备
公开(公告)号：JPS59203793A
公开(公告)日：1984-11-17
申请号：JP7889983
申请日：1983-05-07
申请人： Agency Of Ind Science & Technol
发明人： FUKUDA TSUGUO , TERAJIMA KAZUTAKA
IPC分类号： C30B15/00 , C30B15/30 , C30B27/02 , C30B29/40 , C30B29/42 , H01L21/208
CPC分类号： C30B15/305
摘要： PURPOSE:To prepare the titled single crystal having high purity, low degree of defect, and high heat stability by performing crystal growth by the pulling method while restricting the range of temp. variation to below a specified value of the range by impressing magnetic field to the melt of GaAs contg. low concn. of Cr. CONSTITUTION:Starting materials and a sealing material in a crucible 3 provided in a high-pressure vessel 1 are melted, and a layer 6 of molten B2O3 is formed in the upper layer and a layer of melt 5 of GaAs is formed in the bottom of the crucible. A pulling rod 8 is moved downward, and when a seed crystal 7 is brought into contact with the melt layer 5, magnetic field is impressed by a magnetic field impressing apparatus 11 is applied to the melt layer 5. In this case, the intensity of the magnetic field to be impressed is regulated to a value by which the convection of heat is retarded and the range of variation of temp. near the boundary surface of the melt is regulated to
摘要翻译：目的：通过在限制温度范围的同时通过拉伸法进行晶体生长，制备具有高纯度，低缺陷度和高热稳定性的标题单晶。通过给GaAs的熔体施加磁场，使其变化到低于规定值的范围。低浓度的Cr 构成：将设置在高压容器1中的坩埚3中的起始材料和密封材料熔化，在上层形成熔融B 2 O 3层6，在底部形成GaAs层5 坩埚。拉杆8向下移动，并且当使晶种7与熔融层5接触时，施加磁场施加到熔融层5上的磁场。在这种情况下，强度要施加的磁场被调节到热的对流被延迟的温度和温度变化的范围。在熔体边界附近调节到<= 1摄氏度。通过在保持上述温度变化范围的同时以指定的转速旋转晶种7来生长GaAs单晶10。

8. 发明专利

JPS6147630A Adjustment of n type carrier concentration distribution in gallium arsenic semiconductor 失效
标题翻译：氮化镓半导体中N型载流子浓度分布的调整
公开(公告)号：JPS6147630A
公开(公告)日：1986-03-08
申请号：JP16884484
申请日：1984-08-14
申请人： Agency Of Ind Science & Technol
发明人： SATO TAKASHI , ISHIDA KOICHI , TERAJIMA KAZUTAKA , FUKUDA TSUGUO , NAKAJIMA MASATO
IPC分类号： H01L21/265
CPC分类号： H01L21/265
摘要： PURPOSE:To adjust carrier concentration distribution of N type layer after ion implantation by selecting a fused composition ratio of gallium and arsenic on the occasion of manufacturing a semi-insulating gallium arsenic substrate. CONSTITUTION:A semi-insulating gallium arsenic single crystal substrate is manufactured with the liquid sealing lifting method by selecting a fused composition rate of gallium and arsenic in the range of 0.500-0.505 and it is then subjected to the heat processing by ion implantation to such substrate. For example, a substrate is cut away from an ingot by lifting a crystal using fused solution having the fused composition ratio in said range and the Si ion is implanted to such crystal substrate under the condition of 150keV and 3X10 cm . Thereafter, the heat processing is carried out under the ambient of 850 deg.C, 30min, As pressure (PA84-100Torr). Thereby, the N type carrier concentration distribution depends on the fused composition ratio, and moreover an electrical conductive layer having less fluctuation, excellent uniformity and controlability can be obtained.
摘要翻译：目的：通过在制造半绝缘镓砷衬底的情况下选择镓和砷的熔融组成比来调整离子注入后N型层的载流子浓度分布。构成：通过选择0.500-0.505范围内的镓和砷的熔融组成比，通过液体密封提升方法制造半绝缘镓砷单晶衬底，然后通过离子注入进行热处理基质。例如，通过使用具有所述范围内的熔融组成比的熔融溶液提升晶体，将晶片从晶片上切下，并且在150keV和3×10 12 cm -2的条件下将Si离子注入到该晶体基板 >。此后，热处理在850℃，30分钟，As压力（PA84-100Torr）的环境下进行。因此，N型载流子浓度分布取决于熔融组成比，并且还可以获得具有较小波动，优异的均匀性和可控性的导电层。

9. 发明专利

JPS59203794A Preparation of semiinsulative gaas single crystal 失效
标题翻译：半乳糖单体晶体的制备
公开(公告)号：JPS59203794A
公开(公告)日：1984-11-17
申请号：JP7890083
申请日：1983-05-07
申请人： Agency Of Ind Science & Technol
发明人： FUKUDA TSUGUO , TERAJIMA KAZUTAKA
IPC分类号： C30B15/00 , C30B15/30 , C30B29/42
CPC分类号： C30B15/305
摘要： PURPOSE:To prepare the titled single crystal having high resistance without adding any additive component with high reproducibility and economically in a high-pressure liquid sealing pulling method by pulling up GaAs melt having a small range of temp. variation reduced by impressing magnetic field at high speed. CONSTITUTION:Starting materials and a sealing material in a crucible 3 provided in a high pressure vessel 1 are melted to form a molten liquid layer 6 of B2O3 at the top of the crucible and a melt layer 5 of GaAs in the bottom of the crucible. A pulling rod 8 is then moved downward, and when a seed crystal 7 is brought into contact with the melt 5, magnetic field is impressed by a magnetic field impressing apparatus 11 to the melt 5 to regulate the range of temp. variation near the boundary surface of the melt to below 1 deg.C. GaAs single crystal 10 is grown by pulling up the seed crystal 7 with >=15mm./hr pulling speed while rotating the seed crystal at a specified speed maintaining the range of the temp. variation.
摘要翻译：目的：通过提高具有较小温度范围的GaAs熔体，制备具有高电阻性的标题单晶，而无需添加具有高再现性和经济性的高压液体密封拉制方法中的任何添加剂组分。通过在高速下施加磁场而减小变化。构成：设置在高压容器1中的坩埚3中的起始材料和密封材料熔化，在坩埚的顶部形成B 2 O 3的熔融液体层6和坩埚的底部的熔融层5。然后拉杆8向下移动，并且当晶种7与熔体5接触时，通过磁场施加装置11将磁场施加到熔体5以调节温度范围。熔体边界附近的变化量低于1摄氏度。通过以> = 15mm /小时的拉伸速度提升晶种7，同时以特定的速度旋转晶种来保持GaAs单晶10，从而保持温度的范围。变异。

10. 发明专利

JPS59184797A Preparation of group iii-v compound semiconductor single crystal 失效
标题翻译： III-V族化合物半导体单晶的制备
公开(公告)号：JPS59184797A
公开(公告)日：1984-10-20
申请号：JP5792783
申请日：1983-04-04
申请人： Agency Of Ind Science & Technol
发明人： KATSUMATA TOORU , TERAJIMA KAZUTAKA , NAKAJIMA HIROAKI , FUKUDA TSUGUO
IPC分类号： C30B15/20 , C30B15/28 , C30B27/02 , C30B29/40 , H01L21/18 , H01L21/205 , H01L21/208
CPC分类号： C30B15/28
摘要： PURPOSE:To obtain group III-V compound semiconductor single crystal having little fluctuation of diameter size, by estimating a pattern of change of crystal within a specified time by the continuous measurement of the weight and pulled length of a crystal in the course of growth, and comparing the obtd. pattern with a set pattern to control the heating of a heater. CONSTITUTION:The weight and the pulled length of a crystal 1 in the course of growth are measured by a weight sensor 2 and a position sensor 3. The measured value is inputted to an operation circuit 4 to operate a diameter of the crystal and to storage the change pattern. From this pattern, a change pattern of the crystal shape after a specified time is estimated, and compared with a set pattern. Basing on the difference between both patterns, the heating temp. of the heater 6 is adjusted by an operation circuit 4 to attain a desired compensated temp. after a specified time. By this method, stability of control is improved and a semiconductor single crystal with little fluctuation of crystal size is obtd.
摘要翻译：目的：通过在生长过程中通过连续测量晶体的重量和拉长来估计在规定时间内的晶体变化模式，获得直径尺寸波动小的III-V族化合物半导体单晶，并比较obtd。具有设定模式的模式以控制加热器的加热。构成：通过重量传感器2和位置传感器3测量晶体1在生长过程中的重量和拉长长度。将测量值输入到操作电路4以操作晶体的直径和存储变化模式。从该图案，估计在规定时间之后的晶体形状的变化图案，并与设定图案进行比较。基于两种图案之间的差异，加热温度。的加热器6由操作电路4调节以获得期望的补偿温度。经过一段时间。通过这种方法，提高了控制的稳定性，并且可以看出晶体尺寸波动小的半导体单晶。

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