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1. 发明专利

JP2005336600A Electroless plating method for silicon substrate and method for forming metallic layer on silicon substrate 有权
标题翻译：硅基板的电镀方法及在硅基板上形成金属层的方法
公开(公告)号：JP2005336600A
公开(公告)日：2005-12-08
申请号：JP2004312373
申请日：2004-10-27
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： SEKI HITOSHI
IPC分类号： C23C18/18 , C23C18/16 , C23C18/32 , C23C18/38 , C23C18/42 , H01L21/288
CPC分类号： C23C18/54
摘要： PROBLEM TO BE SOLVED: To simply form an electroless plating film having excellent flatness and uniformity on a silicon substrate at a low cost by using a catalyzing solution having excellent removing capacity for a silicon oxide film.
SOLUTION: A silicon substrate is dipped into an aqueous solution containing hydrofluoric acid, ammonium fluoride and catalyst metal for electroless plating to catalyze the surface of the silicon substrate, and thereafter, a metal film is formed on the surface of the silicon substrate by electroless plating.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过使用具有优异的氧化硅去除能力的催化溶液，以低成本简单地形成在硅衬底上具有优异的平坦度和均匀性的化学镀膜。解决方案：将硅衬底浸入含有氢氟酸，氟化铵和催化剂金属的无电镀的水溶液中以催化硅衬底的表面，然后在硅衬底的表面上形成金属膜通过化学镀。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2005114522A Manufacturing method of connection device 审中-公开
标题翻译：连接装置的制造方法
公开(公告)号：JP2005114522A
公开(公告)日：2005-04-28
申请号：JP2003348437
申请日：2003-10-07
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： SEKI HITOSHI
IPC分类号： G01R31/26 , G01R1/073 , H01L23/32 , H01R33/76
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a connection device capable of forming a contactor having a prescribed shape easily and properly, especially when forming the contactor by a wet etching method.
SOLUTION: The first mask 43 wherein the shape of a spiral contactor 20 is pattern-formed on the surface of a conducting member 40 is formed, and the conducting member 40 not covered with the first mask 43 is etched up to the middle part by the wet etching method. Then, etching is performed from the back of the conducting member 40 in a similar way, to thereby form the spiral contactor 20. Wet etching of the conducting member 40 is performed separately from the front and the back in this way, to thereby shorten each etching time, and to form highly accurately the spiral contactor 20 having a prescribed shape.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够容易且适当地形成具有规定形状的接触器的连接装置的制造方法，特别是通过湿蚀刻法形成接触器时。解决方案：形成第一掩模43，其中在导电构件40的表面上形成螺旋形接触器20的形状，并且未被第一掩模43覆盖的导电构件40被蚀刻到中间部分采用湿蚀刻法。然后，以类似的方式从导电构件40的背面进行蚀刻，从而形成螺旋接触器20.以这种方式，与正面和背面分开地进行导电构件40的湿蚀刻，从而缩短每个蚀刻时间，并且高精度地形成具有规定形状的螺旋接触器20。版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2547017B2 失效
公开(公告)号：JP2547017B2
公开(公告)日：1996-10-23
申请号：JP12767987
申请日：1987-05-25
申请人： ALPS ELECTRIC CO LTD
发明人： OKABE KAZUYA , KASAMA YASUHIKO , SEKI HITOSHI , IWASAKI CHISATO
IPC分类号： H01L31/0248 , H01L31/0224 , H01L31/08 , H01L31/09

4. 发明专利

JPS6470729A THIN FILM TWO-TERMINAL ELEMENT 失效
公开(公告)号：JPS6470729A
公开(公告)日：1989-03-16
申请号：JP22715787
申请日：1987-09-10
申请人： ALPS ELECTRIC CO LTD
发明人： IWASAKI CHISATO , SEKI HITOSHI , KASAMA YASUHIKO
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1365
摘要： PURPOSE:To steepen the non-linearity of a thin film two-terminal element by arranging amorphous silicon group alloy films with large band gap at both sides of an amorphous silicon film, and obtaining non-linear resistance. CONSTITUTION:A protrusion part 1a is formed at an image element electrode consisting of a transparent conductive film. On the protrusion part 1a, the amorphous silicon group alloy film 2, an amorphous silicon hydride film 3, the amorphous silicon group alloy film 4, and a scanning electrode 5 made of aluminum are laminated in order. In such a case, the films 2, 3, and 4 are formed integrally, and also, patterning for them are performed comprehensively. At this time, by forming the band gaps of the films 2 and 4 which form the layers of both sides larger than that of the film 3 which forms an intermediate layer, the non-linearity of the element can be obtained. When a voltage is impressed on the element of a device, a tunnel current flows on the films 2 and 4, and the impact ionization of a carrier is performed, thereby, the non-linearity can be steepend.

5. 发明专利

JPS63311760A OPTICAL SENSOR ARRAY 失效
公开(公告)号：JPS63311760A
公开(公告)日：1988-12-20
申请号：JP14830187
申请日：1987-06-15
申请人： ALPS ELECTRIC CO LTD
发明人： OKABE KAZUYA , SEKI HITOSHI , IWASAKI CHISATO , KASAMA YASUHIKO
IPC分类号： H01L27/14 , H01L27/146 , H01L31/0248 , H01L31/08 , H04N5/335 , H04N5/369
摘要： PURPOSE:To improve an array of this design in manufacturing yield by a method wherein transparent electrode layers provided at each of two amorphous silicon layers and a metallic layer connecting the two amorphous silicon layers are provided. CONSTITUTION:An optical sensor array 7 is composed of two a-Si layers 3 and 3, transparent electrode layers 4 and 4 provided at each of the a-Si layers 3 and 3, and a metallic layer 2 connecting the two a-Si layers 3 and 3. Therefore, when the optical sensor array 7 is manufactured, even provided that one of the a-Si layer 3 of the optical sensor is short-circuited due to a pin hole or the like, the photosensitive function of the optical sensor is not made to be lost. By these processes, defective product due to the a-Si layer 3 damaged through a pin hole or the like can be decreased in occurrence rate, and thus the optical sensor 7 can be improved in production yield.

6. 发明专利

JPS63303321A THIN FILM TRANSISTOR ARRAY 失效
公开(公告)号：JPS63303321A
公开(公告)日：1988-12-09
申请号：JP13947387
申请日：1987-06-03
申请人： ALPS ELECTRIC CO LTD
发明人： OKABE KAZUYA , SEKI HITOSHI , KITAGAWA HIRONOBU
IPC分类号： G09F9/30 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To attain an improvement in both a response characteristic and yield by providing plural pieces of thin film transistors in parallel to respective picture elements and connecting resistance elements in service to the respective TRs to widen the range for the resistance values of the resistance elements which can be taken. CONSTITUTION:Plural pieces of the thin film TRs 24 are formed on a glass substrate 21 and each TR 24 is constituted of a gate 25, an insulating film 25, a semiconductor film 27, a source electrode wiring 23 formed on the film 27 and a drain 30. The gate 25 is connected via a resistance film 31 to a gate electrode wiring 22. The resistance value of the film 31 is set at the min resistance value at which the signal voltage of the source 23 does not drop when the gate 25 and source 23 of a piece of the TR 24 are short circuited. In addition, the max. resistance value is increased by decreasing the individual gate capacities of the TRs 24 divided to a plurality. The range of the resistance value which can be taken is, therefore, increased and the improvement in both the response characteristic and the yield is attained.

7. 发明专利

JPS63283169A MANUFACTURE OF THIN FILM TRANSISTOR 失效
公开(公告)号：JPS63283169A
公开(公告)日：1988-11-21
申请号：JP11918887
申请日：1987-05-15
申请人： ALPS ELECTRIC CO LTD
发明人： SASAKI MAKOTO , FUKUI HIROFUMI , SEKI HITOSHI , KASAMA YASUHIKO
IPC分类号： H01L21/318 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To prevent a film from isolating at the time of growing the film by forming a protective film of a thin film transistor by a CVD method using mixture gas of a-Si:H-NH3-H2. CONSTITUTION:An Mo gate electrode 2 is formed on a glass substrate 1, covered with two layer film 3 of an a-Si:H and Si3N4, superposed with an Si layer 4, and patterned with a predetermined channel width. A source electrode 5 and a drain electrode 6 are formed to form a thin film transistor 10. Then, an Si3N4 protective film 11 is formed by a CVD method with mixture gas of three components of a-Si:H-NH3-H2. According to this structure, even if a substrate temperature is set to a low value, a dense and hard Si3N4 film is obtained, the substrate temperature at the time of growing a film is reduced to alleviate the thermal influence to the transistor, thereby preventing the protective film from isolating.

8. 发明专利

JPS62235983A SWITCHING ELEMENT FOR DISPLAY UNIT 失效
公开(公告)号：JPS62235983A
公开(公告)日：1987-10-16
申请号：JP7969386
申请日：1986-04-07
申请人： ALPS ELECTRIC CO LTD
发明人： KASAMA YASUHIKO , OKABE KAZUYA , SEKI HITOSHI , SASAKI MAKOTO , HEBIGUCHI HIROYUKI , ITO SATORU
IPC分类号： H01L27/12 , G02F1/133 , G02F1/135 , G02F1/136 , G02F1/1368 , G09G3/20 , H01L21/336 , H01L29/78 , H01L29/786

9. 发明专利

JP2010016969A Polymeric actuator and manufacturing method therefor 有权
标题翻译：聚合物致动器及其制造方法
公开(公告)号：JP2010016969A
公开(公告)日：2010-01-21
申请号：JP2008174208
申请日：2008-07-03
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： SEKI HITOSHI , MIMORI KENICHI
IPC分类号： H02N11/00
摘要： PROBLEM TO BE SOLVED: To provide a polymeric actuator along with a manufacturing method therefor, in which adhesiveness at an interface where an electrode film and an electrolytic film join each other is raised for improved physical characteristics. SOLUTION: First rough parts 3a and 3b are formed at second electrodes films 3 and 4, and second rough parts 2a and 2b are formed on both front surface and rear surface of the electrolytic film 2 facing them. The first and second electrode films 3 and 4 as well as the electrolytic film 2 are stacked so that the first rough part 3a, and the second rough part 2a engage with the first rough part 4a and the second rough part 2b. Thus, the adhesiveness between the interfaces where the first and second electrode films 3 and 4 and the electrolytic film 2 join each other is enhanced. Further, the arrangement of conductive fillers becomes cubic and the positive ions contained in the ion liquid of the first and second electrode films 3 and 4 are movable in sufficient manner, so physical characteristic of the polymeric actuator such as response is improved. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种聚合物致动器及其制造方法，其中电极膜和电解质膜彼此接合的界面处的粘附性被提高以改善物理特性。解决方案：第一粗糙部分3a和3b形成在第二电极膜3和4处，并且第二粗糙部分2a和2b形成在面向它们的电解膜2的前表面和后表面上。第一和第二电极膜3和4以及电解质膜2堆叠成使得第一粗糙部分3a和第二粗糙部分2a与第一粗糙部分4a和第二粗糙部分2b接合。因此，增强了第一和第二电极膜3和4与电解质膜2相互接合的界面之间的粘附性。此外，导电填料的排列变为立方体，并且包含在第一和第二电极膜3和4的离子液体中的正离子可以充分移动，因此提高了聚合物致动器的物理特性，例如响应。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2005050598A Manufacturing method of connecting device 有权
标题翻译：连接设备的制造方法
公开(公告)号：JP2005050598A
公开(公告)日：2005-02-24
申请号：JP2003204272
申请日：2003-07-31
申请人： Alps Electric Co Ltd , アルプス電気株式会社
发明人： NAGANO SHINICHI , SEKI HITOSHI , YOSHIDA MAKOTO
IPC分类号： H01R33/76 , H01R43/16 , H01R43/20
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a connecting device capable of appropriately molding a contactor in three dimensions, in a method simpler than a conventional method. SOLUTION: Contactors are formed in a given shape, for instance by plating, on a base plate 30 with a plurality of convex streaks 31 formed on the surface 30a. At the same time as the contactors are formed on the convex streaks 31, therefore, a three-dimensional molding is also possible. A three-dimensional forming process carried out after forming contactors in two dimensions as in the conventional method is no more needed, which enables simplification of processes. COPYRIGHT: (C)2005,JPO&NCIPI

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