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1. 发明专利

JPS62197755A MANUFACTURE OF OXIDE SEMICONDUCTOR THIN FILM FOR GAS SENSOR 失效
公开(公告)号：JPS62197755A
公开(公告)日：1987-09-01
申请号：JP3908286
申请日：1986-02-26
申请人： AGENCY IND SCIENCE TECHN , EBARA CORP
发明人： MIZUTA SUSUMU , KONDO WAKICHI , KUMAGAI TOSHIYA , YOKOTA HIROSHI , NAGAI SHINJI , SAKAI KOSHIRO
IPC分类号： G01N27/12
摘要： PURPOSE:To make an oxide semiconductor highly sensitive, by a method wherein a mixture of several metal oxide and a catalyst is diluted and is provided on a substrate as a thin film to be baked by heat. CONSTITUTION:An organic metal compound containing ions of metal (a) forming an oxide semiconductor as main component is mixed with a metal compound containing ions of metal (b) different therefrom and a catalyzing metal (c) as miner component. The metal (a) includes Zn, Ti, Ni, Al and the like, the metal (b) does Mg, Li, Mn and the like and the metal (c) does Pt, Pd and the like and a naphthenic acid salt, fatty acid salt or the like of these metals is used. The mixture of these metal salts is diluted into an organic solvent to form a thin film on a substrate. Then, the work is baked by heat to obtain an oxide semiconductor gas sensor. This makes the oxide semiconductor highly sensitive along with a handy production.

2. 发明专利

JPS63248441A PRODUCTION OF CATALYST 失效
公开(公告)号：JPS63248441A
公开(公告)日：1988-10-14
申请号：JP8304087
申请日：1987-04-06
申请人： AGENCY IND SCIENCE TECHN , EBARA CORP
发明人： MIZUTA SUSUMU , KUMAGAI TOSHIYA , HARUTA MASAKI , YOKOTA HIROSHI , SEKIGUCHI HIDEAKI , HASEGAWA KEIJI
IPC分类号： B01J37/02 , B01D53/94 , B01J23/00 , B01J23/34 , B01J23/84 , C01B13/14 , C01B13/18
摘要： PURPOSE:To make a compsn. of a catalyst uniform and to facilitate the formation of the catalyst by depositing at least one kind of compds. such as a metal salt of an org. acid contg. metal ions capable of forming metal oxide, etc., on an appropriate carrier, and forming the catalyst by heating and calcining the deposit. CONSTITUTION:A soln. contg. a single compd. or a mixture of compds. selected from metal salts of org. acids and metal alkoxides contg. metal ions capable of forming a metal oxide in an appropriate org. solvent is dropped, or coated on an appropriate carrier, or the carrier is dipped in the soln. Then, after forming thin film of an organometallic compd. on the surface of the carrier by drying the above described carrier, the carrier is calcined to form a metal oxide catalyst. Foamed metal, ceramic honeycomb, foamed ceramic, etc. may be used pref. for the carrier for the catalyst.

3. 发明专利

JPS6366859A MANUFACTURE OF PEROVSKITE TYPE COMPOSITE OXIDE THIN FILM ELECTRODE OR THIN FILM ELECTRODE CATALYST 失效
公开(公告)号：JPS6366859A
公开(公告)日：1988-03-25
申请号：JP20945386
申请日：1986-09-08
申请人： AGENCY IND SCIENCE TECHN , EBARA CORP
发明人： MIZUTA SUSUMU , KONDO WAKICHI , KUMAGAI TOSHIYA , YOKOTA HIROSHI , SEKIGUCHI HIDEAKI , SAKAI KOSHIRO
IPC分类号： G01N27/30 , G01N27/41 , H01M4/88 , H01M4/90 , H01M8/12
摘要： PURPOSE:To make it possible to manufacture an electrode having wide area and high efficiency by forming the thin film of an organic metal compound on the surface of an electrolyte film or a current collector from the solution containing a specific metal organic salt or metal alkoxide, then baking. CONSTITUTION:Metal organic salt or metal alkoxide containing metal ion which forms conductive perovskite type composite oxide is mixed. A mixed solution diluted with organic solvent if necessary, or the solution prepared by adding a metal or an inorganic compound which increases the activity and selectivity of a catalyst in the mixed solution is dropped on or applied to an electrolyte film or a current collector, or the electrolyte film or the current collector is immersed in the solution, then the solution is dried to form the metal organic compound on the surface of the electrolyte film or the current collector, and they are baked. Thereby, the perovskite type composite oxide is formed on the complicated surface or the micropores, and the efficiency of the electrode is increased.

4. 发明专利

JPH059022A PRODUCTION OF SUPERCONDUCTOR 失效
公开(公告)号：JPH059022A
公开(公告)日：1993-01-19
申请号：JP18521391
申请日：1991-06-28
申请人： AGENCY IND SCIENCE TECHN , NIPPON KAGAKU SANGYO KK
发明人： KUMAGAI TOSHIYA , MANABE TAKAAKI , KONDO WAKICHI , MIZUTA SUSUMU , HAMAOKA AKIRA
IPC分类号： C01G1/00 , C01G3/00 , H01B12/00 , H01B13/00 , H01L39/24
摘要： PURPOSE:To produce the superconductor having good stability by preventing the reaction of a superconductive complex metal oxide and a base body at the time of producing this oxide. CONSTITUTION:This process for production of the superconductor consists (A) calcining an inorg. film which is formed on the base material and consists of (1) barium carbonate, (2) rare earth metal oxide, (3) copper oxide, and (4) noble metal and/or the oxide thereof, at the temp. at which the reaction between this film and the base material does not substantially arise in an inert gaseous atmosphere of

5. 发明专利

JPS6261277A METHOD OF STORING HIGHLY EFFICIENT POWER 失效
公开(公告)号：JPS6261277A
公开(公告)日：1987-03-17
申请号：JP20131685
申请日：1985-09-11
申请人： AGENCY IND SCIENCE TECHN
发明人： MIZUTA SUSUMU , KONDO WAKICHI , KUMAGAI TOSHIYA
IPC分类号： H01M8/18 , H01M8/22
摘要： PURPOSE:To make it possible to efficiently perform the charging and discharging processes by using a water solution containing hydrogen chloride, ferrochloride and ferrichloride while regulating its hydrogen chloride concentration within a specific range. CONSTITUTION:A charging process in which ferrochloride in a water solution containing hydrogen chloride, ferrochloride and ferrichloride is partly oxidized into ferrichloride at an anode electrode to generate hydrogen at a cathode electrode and a discharging process in which generated hydrogen is oxidized at the anode electrode while reducing a water solution containing generated ferrichloride at the cathode electrode to generate ferrochloride and hydrogen chloride constitute the captioned method. Thereby, the respective water solutions containing chlorinated iron have hydrogen chloride concentration, desirably 2-7mol/kg-H2O and the total iron concentration of the primary iron and the secondary iron, desirably 1-4mol/kg-H2O, while a mol ratio of the primary iron to the secondary iron is desirably in the range of 1/3-3/1.

6. 发明专利

JP2001053513A HIGH-FREQUENCY FILTER AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2001053513A
公开(公告)日：2001-02-23
申请号：JP22828099
申请日：1999-08-12
申请人： AGENCY IND SCIENCE TECHN , DAIKIN IND LTD
发明人： MIZUTA SUSUMU , KUMAGAI TOSHIYA , MANABE TAKAAKI , KONDO WAKICHI , YAMAGUCHI IWAO , IMAI BUNICHI
IPC分类号： C01G1/00 , C01G3/00 , H01B3/12 , H01B12/06 , H01B13/00 , H01P1/203 , H01P3/08 , H01P11/00
摘要： PROBLEM TO BE SOLVED: To realize superior high-frequency characteristic by applying a solution containing a metal-containing compound to a dielectric substrate, calcining it to form a high-temperature superconductive film and executing prescribed patterning. SOLUTION: After dissolving each acetylacetonate of yttrium, barium and copper into pyridine and proprionic acid, a solvent is distill-removed to be dissolved into methyl alcohol to generate an applying liquid. The obtained applying liquid is applied to a dielectric substrate, consisting of LaAlO3 by a spin coat method and heat-warmed. Similar operation is given to the rear side surface of the dielectric substrate to form an inactive film consisting of yttrium oxide, barium carbonate and copper oxide is formed on both surfaces of the dielectric substrate. A filter of sharp characteristic consisting of a large- area film, having high-frequency characteristics, is obtained by manufacturing a hair pin filter by giving prescribed patterning to the film formed on both surfaces of the dielectric substrate.

7. 发明专利

JP2001031417A PRODUCTION OF METAL OXIDE AND FORMATION OF FINE PATTERN 失效
公开(公告)号：JP2001031417A
公开(公告)日：2001-02-06
申请号：JP30864499
申请日：1999-10-29
申请人： AGENCY IND SCIENCE TECHN
发明人： MIZUTA SUSUMU , TSUCHIYA TETSUO , WATANABE AKIO , IMAI YOJI , YAMAGUCHI IWAO , KUMAGAI TOSHIYA , MANABE TAKAAKI , NIINO HIROYUKI , YABE AKIRA
IPC分类号： C01G1/02 , C08F2/48 , C23C18/12 , C23C18/14
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a metal oxide without carrying out a high temperature thermal treatment which has been known as a coating thermal decomposition method. SOLUTION: This method for producing a metal oxide comprises dissolving a metal organic compound (a metal organic acid salt, a metal acetylacetonate complex, a metal alkoxide having a >=6C organic group) in a solvent, coating the obtained solution on a substrate, drying the coated solution, and then irradiating the formed coating film with laser light having a wavelength of

8. 发明专利

JPH10101485A PRODUCTION OF EPITAXIAL FILM OF TRANSITION METAL OXIDE 失效
公开(公告)号：JPH10101485A
公开(公告)日：1998-04-21
申请号：JP26335396
申请日：1996-10-03
申请人： AGENCY IND SCIENCE TECHN
发明人： MIZUTA SUSUMU , KUMAGAI TOSHIYA , MANABE TAKAAKI , YAMAGUCHI IWAO , KIN SHIYOUGEN , KONDO WAKICHI
IPC分类号： C01G49/06 , C01B13/14 , C30B1/02 , C30B29/16
摘要： PROBLEM TO BE SOLVED: To inexpensively obtain the subject film having high epitaxy in high productivity by calcining and firing a thin film comprising an organic group- bonded transition metal compound formed on a single crystal substrate under respective specific conditions. SOLUTION: A thin film comprising at least one kind of organic ground- bonded transition metal compound (e.g. ferrous 2-ethyl hexanoic acid) formed on a single crystal substrate (e.g. sapphire single crystal) having preferably 0.05-5μm, more preferably 0.1-2μm thickness is calcined by heating at 150-400 deg.C, preferably 200-300 deg.C under a condition or 0-10 atm., preferably 10 -10 atm. oxygen partial pressure and fired by heating at >=500 deg.C, preferably 600-1,000 deg.C under preferably 0-10 atm., more preferably 10 -10 atm. oxygen partial pressure to obtain a thin film of a transition metal oxide (e.g. Fe2 O3 ) having preferably 0.05-5μm, more preferably 0.1-2μm thickness.

9. 发明专利

JPS62148301A THERMOCHEMICAL PREPARATION OF HYDROGEN FROM WATER 失效
公开(公告)号：JPS62148301A
公开(公告)日：1987-07-02
申请号：JP28722385
申请日：1985-12-20
申请人： AGENCY IND SCIENCE TECHN
发明人： MIZUTA SUSUMU , KUMAGAI TOSHIYA
IPC分类号： C01F5/06 , C01B3/02 , C01B3/04 , C01B7/13
摘要： PURPOSE:To provide a process for prepg. hydrogen from water requiring low reaction temp. even for the maximum reaction temp., mitigating requirements for the material of the preparation apparatus remarkably, thus elevating the practicality of the process by utilizing a mechanism wherein the hydrogen is separated by the specified thermochemical decomposition process of water. CONSTITUTION:(A) Gaseous mixture consisting of NO and O2 is introduced into aq. slurry contg. MgO and I2 to react with and absorb NO alone, and precipitate of Mg(NO3)2 and aq. slurry of MgI2 are formed, and separated O2 is taken out of the reaction system. (B) The solid in the slurry is separated from liquid, and (C) MgI2 is separated and HI is generated by heating the obtd. aq. soln. obtd. MgO residue is recycled simultaneously to the stage (A). (D) Mg(MO3)2 in the solid phase obtd. in the stage (B) is decomposed thermally to generate NO and O2, and MgO residue is formed. These products are recycled to the stage (A), and HI produced in the stage (C) is decomposed to I2 and H2, and produced I2 is recycled to the stage (A), and H2 is taken out of the reaction system. Thus, H2 is prepd. All these reactions can be carried out at

10. 发明专利

JPH05147941A PRODUCTION OF SUPERCONDUCTOR AND SUPERCONDUCTOR 失效
公开(公告)号：JPH05147941A
公开(公告)日：1993-06-15
申请号：JP41444090
申请日：1990-12-26
申请人： AGENCY IND SCIENCE TECHN , NIPPON KAGAKU SANGYO KK
发明人： KUMAGAI TOSHIYA , MANABE TAKAAKI , KONDO WAKICHI , MIZUTA SUSUMU , NANJIYOU HIDEHIRO
IPC分类号： C01G1/00 , C01G3/00 , H01B12/00 , H01B13/00 , H01L39/24
摘要： PURPOSE:To produce a superconductor having satisfactory stability by preventing a superconducting multiple metal oxide from reacting with the substrate when the metal oxide is produced. CONSTITUTION:An inorg. film consisting of barium carbonate, the oxide of a rare earth metal and copper oxide formed on a substrate optionally with a noble metal film on the surface is fired at a temp. at which a reaction of the inorg. film with the substrate and/or the noble metal film is not practically caused in an inert gaseous atmosphere having

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