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1. 发明专利

JP2014212303A ステージ式のプラズマエッチング装置有权
标题翻译：阶段式等离子体蚀刻装置
公开(公告)号：JP2014212303A
公开(公告)日：2014-11-13
申请号：JP2014035553
申请日：2014-02-26
申请人：独立行政法人産業技術総合研究所 , National Institute Of Advanced Industrial & Technology
发明人： SHIMIZU SADAKI , NAKANO ZEN , OGISO HISATO , HARA SHIRO , TANAKA HIROYUKI , FUTAGAWA SHINJI , YOSHIOKA HIDEAKI , FUKUDA TAKAHIRO , UCHIYAMA YOSHINORI , KUMPUAN SOMAWANG
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01L21/30 , H05H1/46
摘要：【課題】小さなウェハであっても精度良くエッチングすることができるプラズマエッチング装置を提供する。【解決手段】本発明は、ウェハWが設置されるステージ6と、ステージ6を覆うチャンバ5と、チャンバ5内を真空引きする真空形成装置11と、チャンバ5のステージ6に対向する位置に設けられエッチングガスGをウェハWに吹き付けるための管状のガス供給管5dと、ステージ6に設けられこのステージ6に設置されるウェハWを含む領域にプラズマを発生させてエッチングガスGをイオン化およびラジカル化させるRF印可板6dとを具備した構成とされている。【選択図】図1
摘要翻译：要解决的问题：提供能够精确地蚀刻甚至小晶片的等离子体蚀刻装置。解决方案：本发明的等离子体蚀刻装置包括：设置有晶片W的载物台6; 覆盖舞台6的腔室5; 真空成型装置11抽空室5的内部; 用于将蚀刻气体G喷射到晶片W的管状气体供给管5d，管状气体供给管设置在与腔室5的台部6相对的位置; 以及设置在载物台6上并在区域中产生等离子体的RF施加板6d，使得蚀刻气体G被离子化并转化成自由基，包括设置在载物台6上的晶片W的区域。

2. 发明专利

JP2003080084A Surface of catalyst supporting body and manufacturing method therefor 有权
标题翻译：催化剂表面支撑体及其制造方法
公开(公告)号：JP2003080084A
公开(公告)日：2003-03-18
申请号：JP2001272028
申请日：2001-09-07
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： ISHIZUKA MASANORI , NAKANO ZEN , OGISO HISATO
IPC分类号： B01J37/00 , B01J23/52
摘要： PROBLEM TO BE SOLVED: To provide a technique for dispersing and fixing nano-scale sized catalystic metal particles on a minute optional region of the surface of a supporting body in an optional shape.
SOLUTION: The surface of the catalyst supporting body is formed by etching a surface layer part 16 of a substrate into which the catalyst metal is ion- implanted to expose the catalyst metal. Or the catalyst metal is ion-implanted on the surface layer part 16 of the substrate 12, and next, the surface layer part 16 is etched to expose the implanted catalyst metal. Further, the surface of the catalyst supporting body 14 formed by etching the surface layer part 16 of the substrate in which the catalyst metal is ion-implanted to expose the catalyst metal is etched to be regenerated.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种将纳米尺寸的催化剂金属颗粒分散并固定在支撑体表面的微小任意区域上的技术，其任意形状。解决方案：催化剂载体的表面通过蚀刻离子注入催化剂金属以暴露催化剂金属的基底的表面层16形成。或者将催化剂金属离子注入到基板12的表面层16上，然后蚀刻表面层16以露出注入的催化剂金属。此外，通过蚀刻通过蚀刻催化剂金属被离子注入以暴露催化剂金属的衬底的表面层部分16形成的催化剂支撑体14的表面被蚀刻以被再生。

3. 发明专利

JP2014212302A ノズル式のプラズマエッチング装置有权
标题翻译：喷嘴类型等离子体蚀刻装置
公开(公告)号：JP2014212302A
公开(公告)日：2014-11-13
申请号：JP2014035544
申请日：2014-02-26
申请人：独立行政法人産業技術総合研究所 , National Institute Of Advanced Industrial & Technology
发明人： SHIMIZU SADAKI , NAKANO ZEN , OGISO HISATO , HARA SHIRO , TANAKA HIROYUKI , FUTAGAWA SHINJI , YOSHIOKA HIDEAKI , FUKUDA TAKAHIRO , UCHIYAMA YOSHINORI , KUMPUAN SOMAWANG
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01L21/30 , H05H1/46
摘要：【課題】小さなウェハであっても精度良くエッチングできるプラズマエッチング装置を提供する。【解決手段】本発明は、ウェハWが設置されるステージ6と、ステージ6を覆うチャンバ5と、チャンバ5内を真空引きする真空形成装置11と、チャンバ5に対向する位置に設けられたガス供給管5dと、ガス供給管5dの先端側の内部に取り付けられ、このガス供給管5dから供給されるエッチングガスGをウェハWへ略均等に吹き付けさせるノズル7と、ガス供給管5dに取り付けられガス供給管5d内のエッチングガスG中にマイクロプラズマを発生させるとともにラジカルを生成させるLF印加部8とを具備した構成とされている。【選択図】図1
摘要翻译：要解决的问题：提供能够精确地蚀刻甚至小晶片的等离子体蚀刻装置。解决方案：本发明的等离子体蚀刻装置包括：设置有晶片W的载物台6; 覆盖舞台6的腔室5; 真空成型装置11抽空室5的内部; 设置在面向室5的位置的气体供给管5d; 安装在气体供给管5d的前端侧的喷嘴7，在晶片W上大致均匀地喷射蚀刻气体G，通过气体供给管5d供给蚀刻气体G; 以及安装在气体供给管5d上的LF施加部8，在气体供给管5d内的蚀刻气体G中产生支原体，形成自由基。

4. 发明专利

JP2005089273A Crystal defect restoration method, crystal production method, pattern formation method, and x-ray dose detection body 有权
标题翻译：晶体缺陷恢复方法，晶体生产方法，图案形成方法和X射线剂量检测体
公开(公告)号：JP2005089273A
公开(公告)日：2005-04-07
申请号：JP2003328437
申请日：2003-09-19
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： OGISO HISATO , NAKANO ZEN , AKETO JUN
IPC分类号： C30B33/04 , C30B31/22 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide a method by which a crystal defect can be restored without causing temperature rise, and a method by which the crystal defect of nonmetal can be easily controlled.
SOLUTION: Ions are implanted into the central part 12 of a substrate 1 consisting of a magnesium oxide single crystal. Thereby, the ion implanted part becomes a colored area 2. The surface of the substrate 1 where the colored area 2 is formed is irradiated with X-rays in such a state that a mask having a circular hole at its center is mounted on the substrate. Thereby, the color of the circular part irradiated with X-ray of the colored area 2 is thinned, and a circular pattern 3 is formed.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可以在不引起温度升高的情况下恢复晶体缺陷的方法，以及可以容易地控制非金属的晶体缺陷的方法。解决方案：将离子注入到由氧化镁单晶构成的衬底1的中心部分12中。由此，离子注入部分成为着色区域2.在形成有着色区域2的基板1的表面上，在其中心具有圆形孔的掩模安装在基板上的状态下被照射X射线。由此，用着色区域2的X射线照射的圆形部分的颜色变薄，并且形成圆形图案3。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2009082936A Cemented carbide tool for fine machining 有权
标题翻译：用于精细加工的CEMENTED CARBIDE工具
公开(公告)号：JP2009082936A
公开(公告)日：2009-04-23
申请号：JP2007253825
申请日：2007-09-28
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： NAKANO ZEN , OGISO HISATO
IPC分类号： B21D37/01 , B01J23/68 , C23C14/08 , C23C16/34
CPC分类号： B21D37/01 , B01J23/52 , B01J23/888 , B01J27/22 , B01J37/347 , C23C30/005
摘要： PROBLEM TO BE SOLVED: To improve the durability of die parts having a shape of an micrometer region by utilizing a tungsten oxide material and to attain the production of micro parts using the die parts.
SOLUTION: The cemented carbide tool for fine machining, whose the material of the machining tool part is made of cemented carbide comprising tungsten carbide as the main material and has on the surface a thin film structure 2 which has a thickness of 20-200 mm and comprises tungsten oxide 5 as the main material, wherein the thin film structure 2 comprising tungsten oxide 5 as the main material is composed of any one of single crystal, polycrystal structure and amorphous structure 6 or a mixed state of the single crystal, the polycrystal structure and the amorphous structure 6, and the thin film structure comprising the tungsten oxide as the main material contains gold nanoparticles 7 having oxidation catalyst effect and is used as any of a punching die tool, a drawing die tool and a bending die tool.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过利用氧化钨材料来提高具有微米区域形状的模具部件的耐久性，并且使用模具部件来获得微型部件的生产。
解决方案：用于精加工的硬质合金刀具，其加工工具部件的材料由包含碳化钨作为主要材料的硬质合金制成，并且在表面上具有厚度为20微米的薄膜结构2， 200mm，包含氧化钨5作为主要材料，其中以氧化钨5为主要材料的薄膜结构2由单晶，多晶结构和非晶结构6中的任一种构成，或单晶的混合状态，多晶体结构体和非晶体结构体6以及以氧化钨为主体的薄膜结构体含有具有氧化催化剂作用的金纳米粒子7，可用作冲孔模具工具，拉伸模具工具和弯曲模具工具。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008219022A Method of recovering crystal-defect, method of forming crystal body, patterning method, and x-ray dosage detection body 有权
标题翻译：回收晶体缺陷的方法，形成晶体的方法，方法和X射线剂量检测体
公开(公告)号：JP2008219022A
公开(公告)日：2008-09-18
申请号：JP2008071133
申请日：2008-03-19
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： OGISO HISATO , NAKANO ZEN , AKETO JUN
IPC分类号： H01L21/265 , C30B33/04 , G01T1/02
摘要： PROBLEM TO BE SOLVED: To recover crystal defects without temperature rise, and to control crystal defects of non-metals.
SOLUTION: An ion implantation is performed in the central portion of a substrate 1 comprising a magnesium oxide single crystal to form a colored portion thereby. A mask having a circular opening formed in the center thereof is mounted on the plane of the substrate formed the colored region 2 to irradiate X-ray. A circular pattern 3 is formed with the color of the circular portion faded by the irradiation of the X-ray.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：回收没有温度升高的晶体缺陷，并控制非金属的晶体缺陷。解决方案：在包含氧化镁单晶的衬底1的中心部分进行离子注入，从而形成着色部分。在其中心形成有圆形开口的掩模安装在形成着色区域2的基板的平面上以照射X射线。通过X射线照射使圆形部分的颜色消失，形成圆形图案3。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2006162279A Method and instrument for measuring fine particle strength 有权
标题翻译：测量细颗粒强度的方法和仪器
公开(公告)号：JP2006162279A
公开(公告)日：2006-06-22
申请号：JP2004349978
申请日：2004-12-02
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： OGISO HISATO , AKETO JUN
IPC分类号： G01N3/00 , G01B21/10 , G01N3/08 , G01N3/42 , G01N15/02 , G01Q30/02 , G01Q60/24
摘要： PROBLEM TO BE SOLVED: To accurately measure the strength of fine particles having a size of 1μm or less, by employing a diamond indenter comprising a flat part (1μm or less) having a size nearly equal to fine particle size while controlling a stage mounted with a diamond substrate by closed-loop control capable of performing control of 1μm or less, and further, by measuring the particle size of the fine particles by an atomic force microscope.
SOLUTION: This method is characterized in that: fine particles are dispersed on the diamond substrate; one fine particle to be measured is chosen to measure the particle size of the fine particle by the atomic force microscope; then, the diamond substrate is moved by the closed-loop controlled stage so that the fine particle to be measured is positioned just under the diamond indenter; thereafter, the diamond indenter is displaced with the flat part formed thereon so as to have a size nearly equal to the size of the fine particle; and the strength of the fine particle is measured by imposing a load on the fine particle.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了精确测量尺寸为1μm以下的细颗粒的强度，通过使用金刚石压头，该金刚石压头包括尺寸几乎等于细粒度的平坦部分（1μm或更小），同时控制通过能够进行1μm以下的控制的闭环控制，并且还可以通过用原子力显微镜测量微粒的粒径来安装金刚石基板。解决方案：该方法的特征在于：细颗粒分散在金刚石基底上; 选择一个要测量的细颗粒通过原子力显微镜测量细颗粒的粒径; 然后，金刚石基底通过闭环控制阶段移动，使得要测量的微粒位于金刚石压头正下方; 此后，金刚石压头与其上形成的平坦部位一起移位，使其尺寸几乎等于微粒尺寸; 并且通过在微粒上施加载荷来测量细颗粒的强度。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005353344A Extraction electrode and analysis method using it 有权
标题翻译：提取电极及其分析方法
公开(公告)号：JP2005353344A
公开(公告)日：2005-12-22
申请号：JP2004170881
申请日：2004-06-09
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： NAKANO ZEN , OGISO HISATO , AKETO JUN
IPC分类号： H01J27/26 , H01J49/16 , G01N13/10
摘要： PROBLEM TO BE SOLVED: To provide an extraction electrode capable of improving stability and accuracy of observation and measurement, in relation to an extraction electrode incorporated in a device for observing and measuring a sample of a scanning atom probe (SAP), an electric field ion type microscope or the like as an ion source or an electron source.
SOLUTION: This extraction electrode 1 comprises an electrode part 2 and an insulating layer 3, is formed into a funnel-like shape as a whole, and has a hole 4 for passing ions vaporized from a sample formed at a tip. The electrode part 2 is formed by using platinum, tungsten or the like as a material; the insulating layer 3 is formed by an aerosol deposition method by using a material having a low dielectric constant such as alumina; the insulating layer 3 is slightly projected from the tip of the electrode part 2; and a space is formed between the tip of the extraction electrode 1 and a surface of the sample by the projecting amount thereof.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供能够提高观察和测量的稳定性和精度的提取电极，关于结合在用于观察和测量扫描原子探针（SAP）的样品的装置中的提取电极，电场离子型显微镜等作为离子源或电子源。解决方案：该引出电极1包括电极部分2和绝缘层3，整体形成为漏斗状，并且具有用于使从形成在尖端处的样品蒸发的离子通过的孔4。电极部2通过使用铂，钨等作为材料形成; 通过使用具有低介电常数的材料如氧化铝，通过气溶胶沉积法形成绝缘层3; 绝缘层3从电极部分2的尖端略微突出; 并且在引出电极1的尖端和样品的表面之间形成有其突出量的空间。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2013049885A Method for forming carbon thin film 审中-公开
标题翻译：形成碳薄膜的方法
公开(公告)号：JP2013049885A
公开(公告)日：2013-03-14
申请号：JP2011187700
申请日：2011-08-30
申请人： National Institute Of Advanced Industrial Science & Technology , 独立行政法人産業技術総合研究所
发明人： NAKAO SETSUO , IKEYAMA MASAMI , YUKIMURA KEN , OGISO HISATO , NAKANO ZEN
IPC分类号： C23C14/06 , C23C14/34 , H01L21/203 , H01L21/314
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a carbon thin film, by which a hydrogen-free, dense and hard diamond-like carbon film can be easily formed.SOLUTION: In the method for forming the carbon film, a carbon film forming apparatus for depositing the carbon film on a surface of a sample substrate arranged on a sample substrate electrode by means of a magnetron sputtering method is used, and voltages are applied on a carbon target substrate electrode and the sample electrode in the following 1 to 4 conditions, respectively. 1. A voltage applied on the target substrate electrode is a negative pulse voltage, and a pulse voltage-time ratio is 40% or less. 2. A pulse time of the pulse voltage applied on the target substrate electrode is 20 to 200 μs. 3. A voltage applied on the sample substrate electrode is a negative pulse voltage, and a pulse voltage-time ratio is 50% or less. 4. The magnitude of the negative pulse voltage applied on the sample substrate electrode is from -20 to -200 V.
摘要翻译：要解决的问题：提供一种形成碳薄膜的方法，通过该方法可以容易地形成无氢，致密和硬的类金刚石碳膜。解决方案：在形成碳膜的方法中，使用通过磁控溅射法在布置在样品基板电极上的样品基板的表面上沉积碳膜的碳膜形成装置，并且电压为分别在以下1-4个条件下施加在碳靶基板电极和样品电极上。施加在目标基板电极上的电压为负脉冲电压，脉冲电压 - 时间比为40％以下。施加在目标基板电极上的脉冲电压的脉冲时间为20〜200μs。施加在样品基板电极上的电压为负脉冲电压，脉冲电压 - 时间比为50％以下。施加在样品基板电极上的负脉冲电压的幅度为-20至-200V。版权所有：（C）2013，JPO＆INPIT

10. 发明专利

JP2013007104A Plasma generator and plasma treatment device 审中-公开
标题翻译：等离子体发生器和等离子体处理装置
公开(公告)号：JP2013007104A
公开(公告)日：2013-01-10
申请号：JP2011141206
申请日：2011-06-24
申请人： National Institute Of Advanced Industrial Science & Technology , 独立行政法人産業技術総合研究所
发明人： OGISO HISATO , NAKANO ZEN , YUKIMURA KEN
IPC分类号： C23C14/35 , C23C14/48 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To solve the problems that a plasma generation technique is required, wherein plasma is generated efficiently and energy density is high rather than sputtering efficiency is high, further, since a trigger is required for stable plasma generation, a space to be installed with the trigger is required in the device, and the device is complicated so as to be enlarged.SOLUTION: In the plasma generator, one side of a planar target-side electrode is provided with a target-side magnet composed of a combination of one central magnet and one or more peripheral magnets arranged around the central magnet and having a polarity different from that of the central magnet, the other side of the target-side electrode is provided with a target substrate closely, further, a sample is installed to be confronted with the target substrate, an assist magnet is installed in the side opposite to the side facing the target substrate in the sample, and the polarity on the sample side of the assist magnet and the polarity on the target-side electrode side of the central magnet are the same.
摘要翻译：解决的问题为了解决等离子体产生技术需要的问题，其中有效地产生等离子体并且能量密度高而不是溅射效率高，此外，由于需要用于稳定的等离子体产生的触发器，因此，在设备中需要与触发器一起安装的空间，并且设备复杂以便被放大。解决方案：在等离子体发生器中，平面目标侧电极的一侧设置有由一个中心磁体和一个或多个围绕中心磁体排列的外围磁体的组合构成的目标侧磁体，并且具有极性与中心磁体不同，目标侧电极的另一侧紧密地设置有目标基板，此外，将样品安装成面对目标基板，辅助磁铁安装在与该对象基板相对的一侧面向样品中的目标衬底，辅助磁体的样品侧的极性和中心磁体的靶侧电极侧的极性相同。版权所有（C）2013，JPO＆INPIT

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