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1. 发明专利

JP2013069941A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2013069941A
公开(公告)日：2013-04-18
申请号：JP2011208279
申请日：2011-09-24
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJIMOTO AKIRA , NAKANISHI TSUTOMU , KITAGAWA RYOTA , NAKAMURA KENJI , NUNOTANI NOBUHITO , KAMAKURA TAKANOBU
IPC分类号： H01L33/38 , H01L33/14 , H01L33/40
CPC分类号： H01L33/30 , H01L33/10 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with low voltage and high luminance.SOLUTION: There is provided a semiconductor light-emitting element including first and second electrode layers, first and second semiconductor layers, a light-emitting layer, and a first intermediate layer. The first electrode layer has a metallic portion. In the metallic portion, a plurality of through holes having a circle equivalent diameter of 10 nm or more to 5 μm or less are provided. The second electrode layer has light reflectivity. The first semiconductor layer is provided between the first electrode layer and the second electrode layer, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light-emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, and has light permeability. The first intermediate layer includes a plurality of first contact portions and a first non-contact portion. The first non-contact portion is in juxtaposition with the first contact portions in a surface perpendicular to the stacking direction.
摘要翻译：要解决的问题：提供具有低电压和高亮度的半导体发光元件。解决方案：提供了包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层的半导体发光元件。第一电极层具有金属部分。在金属部分中，设有圆当量直径为10nm以上至5μm以下的多个通孔。第二电极层具有光反射率。第一半导体层设置在第一电极层和第二电极层之间，具有第一导电型。第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。发光层设置在第一半导体层和第二半导体层之间。第一中间层设置在第二半导体层和第二电极层之间，具有透光性。第一中间层包括多个第一接触部分和第一非接触部分。第一非接触部分与垂直于层叠方向的表面中的第一接触部分并列。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2012186195A Semiconductor light-emitting element and method of manufacturing the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2012186195A
公开(公告)日：2012-09-27
申请号：JP2011046266
申请日：2011-03-03
申请人： Toshiba Corp , 株式会社東芝
发明人： ASAKAWA KOUJI , FUJIMOTO AKIRA , KITAGAWA RYOTA , MASUNAGA KUMI , KAMAKURA TAKANOBU , NUNOTANI NOBUHITO
IPC分类号： H01L33/38 , H01L33/22 , H01L33/32
CPC分类号： H01L33/38 , H01L33/0025 , H01L33/0079 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/40 , H01L2933/0016
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that can achieve high luminance.SOLUTION: A semiconductor light-emitting element comprises a structure, a first electrode layer, and a second electrode layer. The structure has a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion and a plurality of openings. The thickness of the metal portion along the direction toward the second semiconductor layer from the first semiconductor layer ranges from 10 nm or more to 50 nm or less. The openings penetrate through the metal portion along the direction and have a circle-equivalent diameter ranging from 10 nm or more to 5 μm or less. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made from a metal and has a portion contacting the first semiconductor layer.
摘要翻译：要解决的问题：提供可以实现高亮度的半导体发光元件。解决方案：半导体发光元件包括结构，第一电极层和第二电极层。该结构具有第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。第二电极层设置在该结构的第二半导体层一侧。第二电极层具有金属部分和多个开口。从第一半导体层沿着朝向第二半导体层的方向的金属部分的厚度为10nm以上至50nm以下。这些开口沿着该方向穿过金属部分，并且具有范围在10nm以上至5μm以下的圆当量直径。第一电极层设置在该结构的第一半导体层一侧。第一电极层由金属制成，并且具有与第一半导体层接触的部分。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012059790A Semiconductor light-emitting element and manufacturing method of the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2012059790A
公开(公告)日：2012-03-22
申请号：JP2010199330
申请日：2010-09-06
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA RYOTA , FUJIMOTO AKIRA , ASAKAWA KOUJI , TSUTSUMI EIJI , KAMAKURA TAKANOBU , NUNOTANI NOBUHITO , OGAWA MASAAKI
IPC分类号： H01L33/22 , H01L21/28 , H01L21/3065 , H01L29/41 , H01L33/38 , H01L33/40
CPC分类号： H01L33/38 , B82Y20/00 , H01L33/42 , H01L2933/0016 , H01L2933/0091
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that can achieve high luminance and a manufacturing method of the same.SOLUTION: The semiconductor light-emitting element comprises a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a luminescent layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode layer, and a second electrode layer. The first electrode layer includes a metal portion that is provided on the second semiconductor layer on the side opposite to the first semiconductor layer and is in contact with the second semiconductor layer, and includes a plurality of openings provided along a direction from the first semiconductor layer to the second semiconductor layer to penetrate the metal portion, each opening being a circle equivalent shape with diameter, when viewed from the above-mentioned direction, of from 10 nanometers to 5 micrometers. The second electrode layer is in electrical conduction with the first semiconductor layer. The second semiconductor layer includes salients contacting the metal portion and recesses provided at the bottom of the openings and retracting from the salient in the above-mentioned direction.
摘要翻译：解决的问题：提供可以实现高亮度的半导体发光元件及其制造方法。解决方案：半导体发光元件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，设置在第一半导体层和第二半导体层之间的发光层，第一电极层和第二电极层。第一电极层包括在与第一半导体层相反的一侧设置在第二半导体层上并与第二半导体层接触的金属部分，并且包括沿着从第一半导体层的方向设置的多个开口到第二半导体层以穿透金属部分，当从上述方向观察时，每个开口是具有从10纳米到5微米的直径的圆当量形状。第二电极层与第一半导体层导通。第二半导体层包括接触金属部分的金属和设置在开口底部的凹部，并且在上述方向上从突出部收回。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2010160212A Metal thin-film composite body having selective light transmissive property, and method for producing the same 有权
标题翻译：具有选择性透光性的金属薄膜复合体及其制造方法
公开(公告)号：JP2010160212A
公开(公告)日：2010-07-22
申请号：JP2009000988
申请日：2009-01-06
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKANISHI TSUTOMU , TSUTSUMI EISHI , FUJIMOTO AKIRA , KITAGAWA RYOTA , MASUNAGA KUMI , ASAKAWA KOUJI
IPC分类号： G02B5/20 , G02F1/01
摘要： PROBLEM TO BE SOLVED: To provide a light transmissive metal thin-film composite body having superior light transmission properties which is superior in wavelength selectivity, and to provide a method for producing the body.
SOLUTION: In the light transmissive metal thin-film composite body including a substrate and first and second metal thin films formed on the substrate and the method for producing the same, the first metal thin film has a plurality of opening parts passing through the metal thin film; the opening diameter of the opening parts is less than the maximum peak wavelength of transmitted light; and the second metal thin film is formed at the inside of the opening parts so as to be located spatially far from the first metal thin film.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种具有优异的波长选择性优异的透光性的透光性金属薄膜复合体，提供一种制造本体的方法。解决方案：在包括基板的基板和形成在基板上的第一和第二金属薄膜的透光金属薄膜复合体及其制造方法中，第一金属薄膜具有多个开口部分通过金属薄膜; 开口部的开口直径小于透射光的最大峰值波长; 并且第二金属薄膜形成在开口部分的内部，以便位于空间上远离第一金属薄膜。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2012059791A Semiconductor light-emitting element and manufacturing method of the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2012059791A
公开(公告)日：2012-03-22
申请号：JP2010199345
申请日：2010-09-06
申请人： Toshiba Corp , 株式会社東芝
发明人： ASAKAWA KOUJI , FUJIMOTO AKIRA , KITAGAWA RYOTA , KAMAKURA TAKANOBU , NUNOTANI NOBUHITO , TSUTSUMI EIJI , OGAWA MASAAKI
IPC分类号： H01L33/38 , H01L29/41
CPC分类号： H01L33/38 , H01L33/405 , H01L2933/0016
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high luminance and a manufacturing method of the same.SOLUTION: The semiconductor light-emitting element according to an embodiment comprises a structure, a first electrode layer and a second electrode layer. The structure includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a luminescent layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first openings and second openings. The first electrode layer is provided on the second semiconductor layer on the side opposite to the first semiconductor layer. The metal portion has a thickness ranging from 10 nanometers to 200 nanometers. The plurality of first openings have circle equivalent diameters ranging from 10 nanometers to 1 micrometer. The second openings have circle equivalent diameters ranging from more than 1 micrometer to 30 micrometers. The first electrode layer is in electrical conduction with the second semiconductor layer and the second electrode layer is in electrical conduction with the first semiconductor layer.
摘要翻译：要解决的问题：提供一种具有高亮度的半导体发光元件及其制造方法。解决方案：根据实施例的半导体发光元件包括结构，第一电极层和第二电极层。该结构包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。第一电极层包括金属部分，多个第一开口和第二开口。第一电极层设置在与第一半导体层相反的一侧的第二半导体层上。金属部分的厚度范围为10纳米至200纳米。多个第一开口具有范围从10纳米到1微米的圆当量直径。第二个开口具有大于1微米至30微米的圆当量直径。第一电极层与第二半导体层导通，第二电极层与第一半导体层导通。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012033534A Pattern formation method and polymer alloy substrate material 有权
标题翻译：图案形成方法和聚合物基体材料
公开(公告)号：JP2012033534A
公开(公告)日：2012-02-16
申请号：JP2010169279
申请日：2010-07-28
申请人： Toshiba Corp , 株式会社東芝
发明人： HATTORI SHIGEKI , ASAKAWA KOUJI , NAKAMURA HIROKO , KITAGAWA RYOTA , KIYONO YURIKO , SUGANO MASAHIRO , HIGA MOMOKA
IPC分类号： H01L21/027 , B82B3/00 , G03F7/26 , G03F7/40 , G03F7/42 , H01L21/312
CPC分类号： H01L21/3081 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/0337
摘要： PROBLEM TO BE SOLVED: To provide a pattern formation method capable of forming a pattern having a high orientation and a phase-separated structure on a polymer alloy in a short time.SOLUTION: The pattern formation method includes the steps of: laminating a self-assembled monolayer and a polymer film on a substrate; chemically bonding the polymer film to the self-assembled monolayer with an irradiation of an energy ray, thereby forming a polymer surface layer on the self-assembled monolayer; and forming a polymer alloy having a pattern of a phase-separated structure on the polymer surface layer.
摘要翻译：要解决的问题：提供能够在短时间内在聚合物合金上形成具有高取向和相分离结构的图案的图案形成方法。解决方案：图案形成方法包括以下步骤：在基底上层叠自组装单层和聚合物膜; 通过照射能量射线将聚合物膜化学键合到自组装单层，从而在自组装单层上形成聚合物表面层; 并在聚合物表面层上形成具有相分离结构图案的聚合物合金。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2011187787A Semiconductor light emitting element, lighting device using the same, and method of manufacturing semiconductor light emitting element 有权
标题翻译：半导体发光元件，使用其的照明装置以及制造半导体发光元件的方法
公开(公告)号：JP2011187787A
公开(公告)日：2011-09-22
申请号：JP2010052809
申请日：2010-03-10
申请人： Toshiba Corp , 株式会社東芝
发明人： FUJIMOTO AKIRA , KITAGAWA RYOTA , TSUTSUMI EISHI , ASAKAWA KOUJI
IPC分类号： H01L33/38
CPC分类号： H01L33/58 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that has improved luminance characteristics, a lighting device using the same, and a method of manufacturing the semiconductor light emitting element. SOLUTION: The semiconductor light emitting element includes a compound semiconductor layer, a metal electrode layer formed thereupon and having a plurality of openings, and a specified light extraction layer formed further thereupon. The metal electrode layer has the openings of specified size. Further, the light extraction layer is 20 to 70 nm thick to cover the metal electrode layer, or has an uneven structure formed on a surface, a height from a surface of the metal electrode layer to a top of a projection portion being 200 to 700 nm. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有改善的亮度特性的半导体发光元件，使用该半导体发光元件的照明装置以及制造该半导体发光元件的方法。解决方案：半导体发光元件包括化合物半导体层，在其上形成并具有多个开口的金属电极层，以及进一步形成的特定光提取层。金属电极层具有规定尺寸的开口。此外，光提取层的厚度为20〜70nm以覆盖金属电极层，或者具有形成在表面上的不均匀结构，从金属电极层的表面到突出部的顶部的高度为200〜700 纳米。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010219408A Light transmission type-solar cell and manufacturing method of the same 有权
标题翻译：光传输类型太阳能电池及其制造方法
公开(公告)号：JP2010219408A
公开(公告)日：2010-09-30
申请号：JP2009066169
申请日：2009-03-18
申请人： Toshiba Corp , 株式会社東芝
发明人： TSUTSUMI EISHI , MASUNAGA KUMI , KITAGAWA RYOTA , NAKANISHI TSUTOMU , FUJIMOTO AKIRA , NISHIZAWA HIDEYUKI , ASAKAWA KOUJI
IPC分类号： H01L31/04
CPC分类号： H01L31/022433 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a light transmissive electrode achieving both of high generating efficiency and high transmittance, and a method of manufacturing the light transmissive electrode.
SOLUTION: A solar cell is equipped with: a photoelectric conversion layer; a light incidence surface side electrode layer; and a counter electrode layer. The light incidence surface side electrode layer is provided with a plurality of openings penetrating the light incidence surface side electrode layer, and a film thickness thereof is in a range of 10 nm or more and 200 nm or less, and an area per one opening of the openings is in a range of 80 nm
2 or more and 0.8 μm
2 or less, and numerical apertures of the openings are in a range of 10% or more and 66% or less, and the whole transmittance is 5% or more at 700 nm. The light incidence surface side electrode layer of this solar cell can be formed by etching using a single particle layer of fine particles and dot patterns of a self-organization of a block copolymer as a mask, and by utilizing a stamper.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供实现高发射效率和高透射率两者的透光电极以及制造透光电极的方法。
解决方案：太阳能电池配备有：光电转换层; 光入射面侧电极层; 和对电极层。光入射面侧电极层设置有贯穿入射面侧电极层的多个开口，其膜厚度在10nm以上且200nm以下的范围内，每1个开口的面积开口在80nm 2 以上且0.8μm 2 以下的范围内，开口的数值孔径在10％以上且66以上的范围内％以下，700nm处的全透光率为5％以上。该太阳能电池的光入射面侧电极层可以通过使用单粒子层的细颗粒和嵌段共聚物的自组织的点图案作为掩模，并利用压模来形成。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2010219388A Thin film solar cell, and method of manufacturing the same 有权
标题翻译：薄膜太阳能电池及其制造方法
公开(公告)号：JP2010219388A
公开(公告)日：2010-09-30
申请号：JP2009065928
申请日：2009-03-18
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKANISHI TSUTOMU , TSUTSUMI EISHI , FUJIMOTO AKIRA , MASUNAGA KUMI , KITAGAWA RYOTA , ASAKAWA KOUJI , NISHIZAWA HIDEYUKI
IPC分类号： H01L31/04
CPC分类号： H01L31/1884 , H01L31/022433 , H01L31/075 , Y02E10/548
摘要： PROBLEM TO BE SOLVED: To provide a thin film solar cell that can obtain superior conversion efficiency even when a photoelectric conversion layer is made thin in film thickness, and to provide a method of manufacturing the thin film solar cell. SOLUTION: The thin film solar cell 1 includes a substrate 2, the photoelectric conversion layer 4 of ≤1 μm in thickness formed on the substrate 2 and including at least a p-type semiconductor layer 4a, an n-type semiconductor layer 4c, and an i-type semiconductor layer 4b disposed between the p-type semiconductor layer 4a and n-type semiconductor layer 4c, a light incident surface-side electrode layer 5 formed on a light incident surface 4d of the photoelectric conversion layer 4, and a counter electrode layer 3 formed on the surface on the opposite side from the light incident surface 4d, wherein the light incident surface-side electrode layer 5 has a plurality of openings 5a penetrating the light incident surface-side electrode layer 5 and is 10 nm to 200 nm thick, the area of each opening 5a being 80 nm 2 to 0.8 μm 2 , and the numerical aperture as the rate of the total area of the openings 5a to the total area of the light incident surface-side electrode layer 5 being 10 to 66%. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供即使当光电转换层的膜厚变薄时也能获得优异的转换效率的薄膜太阳能电池，并且提供制造薄膜太阳能电池的方法。解决方案：薄膜太阳能电池1包括基板2，厚度≤1μm的光电转换层4形成在基板2上，并且至少包括p型半导体层4a，n型半导体层 4c和设置在p型半导体层4a和n型半导体层4c之间的i型半导体层4b，形成在光电转换层4的光入射表面4d上的光入射表面侧电极层5，以及形成在与光入射面4d相反一侧的表面上的对电极层3，其中，光入射表面侧电极层5具有穿过光入射表面侧电极层5的多个开口5a，并且为10 nm至200nm厚，每个开口5a的面积为80nm 2 至0.8μm 2 ，并且作为开口5a的总面积率的数值孔径相对于光入射表面侧电极层的总面积 5是10到66％。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2009230960A Display device and illumination device using organic electroluminescent element 有权
标题翻译：显示装置和使用有机电致发光元件的照明装置
公开(公告)号：JP2009230960A
公开(公告)日：2009-10-08
申请号：JP2008073144
申请日：2008-03-21
申请人： Toshiba Corp , 株式会社東芝
发明人： NAKANISHI TSUTOMU , FUJIMOTO AKIRA , KITAGAWA RYOTA , TSUTSUMI EISHI , ASAKAWA KOUJI
IPC分类号： H05B33/26 , H01L51/50 , H05B33/10
CPC分类号： H01L51/5203 , H01L51/5234 , H01L2251/5315
摘要： PROBLEM TO BE SOLVED: To provide an organic electroluminescent (EL) display or an organic EL illumination device of high efficiency. SOLUTION: This is the organic electroluminescent display equipped with a substrate, a circuit part for pixel driving, and a pixel part aligned in a matrix shape on the substrate. The pixel part is equipped with a light-emitting part including at least one layer or more of organic layers pinched by a first electrode installed at a position near the substrate and a second electrode installed at a position far from the substrate. The second electrode is equipped with a metal electrode layer, and has a plurality of opening parts through which the metal electrode layer penetrates. The metal electrode layer is seamlessly continued between arbitrary two points of a metal site of the metal electrode layer, the diameter of the opening parts is within a range of 10 nm or more and 780 nm or less, the film thickness of the metal electrode layer is within a range of 10 nm or more and 200 nm or less, and in the case distribution of an alignment period of the opening parts is expressed by a radial distribution curve, its half value width is within a range of 5 to 300 nm. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供高效率的有机电致发光（EL）显示器或有机EL照明装置。解决方案：这是配备有基板，用于像素驱动的电路部分和在基板上以矩阵形状排列的像素部分的有机电致发光显示器。像素部件配备有发光部，该发光部包括由安装在基板附近的位置的第一电极夹持的有机层的至少一层以上，以及安装在远离基板的位置的第二电极。第二电极配备有金属电极层，并且具有金属电极层穿过的多个开口部。金属电极层在金属电极层的金属部位的任意两点之间无缝连续，开口部的直径在10nm以上且780nm以下的范围内，金属电极层的膜厚在10nm以上且200nm以下的范围内，并且在开口部的取向周期的分布由径向分布曲线表示的情况下，其半值宽度在5〜300nm的范围内。版权所有（C）2010，JPO＆INPIT

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