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1. 发明专利

JP2015005738A 半導体装置およびその作製方法有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2015005738A
公开(公告)日：2015-01-08
申请号：JP2014103964
申请日：2014-05-20
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： YAMAZAKI SHUNPEI , TANAKA TETSUHIRO , UOJI HIDEKI
IPC分类号： H01L29/786 , H01L21/336 , H01L21/762 , H01L21/822 , H01L21/8234 , H01L21/8238 , H01L21/8242 , H01L27/04 , H01L27/06 , H01L27/088 , H01L27/092 , H01L27/10 , H01L27/105 , H01L27/108
CPC分类号： H01L29/7869 , H01L27/1255 , H01L29/78648 , H01L29/78696
摘要：【課題】微細化又は高集積化が可能な半導体装置を提供する。【解決手段】絶縁層に第1のトレンチと第2のトレンチを形成し、第1のトレンチ内に酸化物半導体層を有するトランジスタを形成し、第2のトレンチと重畳して容量素子を形成する。第1のトレンチより上層に第1のゲート電極を形成し、第1のトレンチより下層に第2のゲート電極を形成する。第2のトレンチと重畳して容量素子を形成することにより、平面視における占有面積を増やすことなく、容量素子の容量値を増やすことができる。【選択図】図1
摘要翻译：要解决的问题：提供可以小型化或高度集成的半导体器件。解决方案：第一沟槽和第二沟槽形成在绝缘层中。形成在第一沟槽中具有氧化物半导体层的晶体管，形成与第二沟槽重叠的电容元件。第一栅电极形成在第一沟槽的上层中，第二栅电极形成在第一沟槽的下层中。由于电容性元件形成为与第二沟槽重叠，所以可以在平面视图中增加电容元件的电容值而不增加占用面积。

2. 发明专利

JP2014222342A 表示装置、表示モジュール及び電子機器有权
标题翻译：显示设备，显示模块和电子设备
公开(公告)号：JP2014222342A
公开(公告)日：2014-11-27
申请号：JP2014108807
申请日：2014-05-27
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： YAMAZAKI SHUNPEI , AKIMOTO KENGO , KOMORI SHIGEKI , UOJI HIDEKI , FUTAMURA TOMOYA , KASAHARA TAKAHIRO
IPC分类号： G09F9/30 , G02F1/1368 , H01L21/28 , H01L21/822 , H01L27/04 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L27/1214 , G02F1/13624 , G02F1/1368 , H01L27/1225 , H01L27/124 , H01L29/66742 , H01L29/7869 , H01L29/78693
摘要：【課題】膜の剥がれに起因する保護回路の不良を防止すると共に保護回路として適した構造を有する表示装置を提供する。【解決手段】ゲート電極15を被覆するゲート絶縁層37と、ゲート絶縁層37上においてゲート電極15と端部が重畳し、第2酸化物半導体層40と導電層41が積層された一対の第1配線層38及び第2配線層39と、少なくともゲート電極15と重畳しゲート絶縁層37及び該第1配線層38及び該第2配線層39における導電層41の側面部及び上面部の一部と第2酸化物半導体層40の側面部と接する第1酸化物半導体層36とを有する非線形素子30aを用いて保護回路を構成する。ゲート絶縁層37上において物性の異なる酸化物半導体層同士の接合を形成することで、ショットキー接合に比べて安定動作をさせることが可能となり、接合リークが低減し、非線形素子30aの特性を向上させることができる。【選択図】図5
摘要翻译：要解决的问题：提供一种防止膜剥离引起的保护电路的缺陷并具有适合作为保护电路的结构的显示装置。解决方案：保护电路通过使用非线性元件30a 其包括：覆盖栅电极15的栅极绝缘层37; 一对第一布线层38和第二布线层39，其端部与栅极绝缘层37上的栅电极15重叠，并且第二氧化物半导体层40和导电层41层叠; 以及第一氧化物半导体层36，其与至少栅电极15重叠并且与栅极绝缘层37中的导电层41的上表面和上表面的一部分以及第二氧化物半导体层40的侧表面接触，第一布线层38和第二布线层39.具有不同性质的氧化物半导体层在栅极绝缘层37上彼此接合，从而与肖特基结相比可以进行稳定的操作。因此，能够降低结漏电，可以提高非线性元件30a的特性。

3. 发明专利

JP2014187359A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2014187359A
公开(公告)日：2014-10-02
申请号：JP2014031898
申请日：2014-02-21
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TANAKA TETSUHIRO , UOJI HIDEKI
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336 , H01L29/417
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which is highly reliable and has stable electrical characteristics.SOLUTION: A low resistance layer is provided between an oxide semiconductor layer and both a source electrode and a drain electrode which constitute a transistor. The low resistance layer functions as a source region or a drain region. The low resistance layer is formed using an oxide material having conductivity or a material which has conductivity even when oxidized. In the low resistance layer, the resistance value thereof and the size of a region functioning as the source region or the drain region are less likely to vary even when oxygen is supplied. Thus, the channel length of the transistor is less likely to vary even when oxygen for reducing oxygen deficiency in the oxide semiconductor layer is supplied to the low resistance layer. The semiconductor device which is highly reliable and has stable electrical characteristics can be provided by using the low resistance layer.
摘要翻译：要解决的问题：提供一种高度可靠并且具有稳定的电气特性的半导体器件。解决方案：在氧化物半导体层与构成晶体管的源电极和漏极两者之间提供低电阻层。低电阻层用作源区或漏区。低电阻层使用具有导电性的氧化物材料或即使被氧化也具有导电性的材料形成。在低电阻层中，即使在供给氧时，其电阻值和用作源极区域或漏极区域的区域的尺寸也不太可能变化。因此，即使氧化物半导体层中的氧缺乏氧被供给到低电阻层，晶体管的沟道长度也不太可能变化。可以通过使用低电阻层来提供高度可靠并且具有稳定的电特性的半导体器件。

4. 发明专利

JP2014112683A Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：JP2014112683A
公开(公告)日：2014-06-19
申请号：JP2013254782
申请日：2013-12-10
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , AKIMOTO KENGO , KOMORI SHIGEKI , UOJI HIDEKI , FUTAMURA TOMOYA , KASAHARA TAKAHIRO
IPC分类号： H01L29/786 , G02F1/1345 , G02F1/1368 , G09F9/30 , H01L21/822 , H01L27/04
CPC分类号： H01L29/7869 , H01L27/0266 , H01L27/1225 , H01L27/124
摘要： PROBLEM TO BE SOLVED: To provide a method of upgrading a protection circuit and stabilizing an operation in a display device for many purposes manufactured by stacking an insulating film and a conductive film other than an oxide semiconductor.SOLUTION: A liquid crystal display device including a protection circuit which comprises: a gate insulation layer 102 which covers a gate electrode 101; a first oxide semiconductor layer 103 which overlaps the gate electrode 101 on the gate insulation layer 102; a channel protection layer which covers a region of the first oxide semiconductor layer 103, which overlaps a channel formation region; and a nonlinear element 170a which has an end overlapping the gate electrode on the channel protection layer and paired first wiring layer 38 and second wiring layer 39 in each of which a conductive layer 105a and a second oxide semiconductor layer 104a are stacked. By forming junction of oxide semiconductor layers having different physical properties on the gate insulation layer 102, a stable operation is enabled in comparison with Schottky junction and junction leakage is reduced thereby to improve characteristics of the nonlinear element 170a.
摘要翻译：要解决的问题：提供一种升级保护电路并稳定显示装置中的操作的方法，用于通过堆叠除了氧化物半导体之外的绝缘膜和导电膜制造的许多目的。解决方案：一种液晶显示装置，包括：保护电路，其包括：覆盖栅电极101的栅极绝缘层102; 与栅极绝缘层102上的栅电极101重叠的第一氧化物半导体层103; 沟道保护层，其覆盖与沟道形成区重叠的第一氧化物半导体层103的区域; 以及非线性元件170a，其与沟道保护层上的栅极电极重叠，并且层叠有导电层105a和第二氧化物半导体层104a的成对的第一布线层38和第二布线层39。通过在栅极绝缘层102上形成具有不同物理性质的氧化物半导体层的结，与肖特基结相比可以实现稳定的操作，从而降低结漏电，从而改善非线性元件170a的特性。

5. 发明专利

JP2013058758A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013058758A
公开(公告)日：2013-03-28
申请号：JP2012203749
申请日：2012-09-17
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , KOYAMA JUN , TAKAHASHI MASAHIRO , KISHIDA HIDEYUKI , MIYANAGA SHOJI , SUGAO ATSUHEI , UOJI HIDEKI , NAKAMURA YASUO
IPC分类号： H01L29/786 , G02F1/1343 , G02F1/1345 , G02F1/1368 , G09F9/30 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/532 , H01L51/50 , H05B33/14
CPC分类号： H01L29/7869 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/324 , H01L21/76801 , H01L21/76828 , H01L21/76838 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device typified by a display device using an oxide semiconductor layer, which accepts a large-sized display screen and a highly-defined display screen and achieves an excellent display quality, a stable operation, and high reliability.SOLUTION: Increase in wiring resistance is suppressed by using a conductive layer containing Cu for wiring wired for a long distance. Cu diffusion can be prevented and a semiconductor device having excellent reliability can be manufactured by arranging the conductive layer containing Cu so as not to overlap an oxide semiconductor layer on which a channel region of TFT is formed and by enfolding the conductive layer with insulation layers each containing a silicon nitride. Particularly, even when a display device that is one embodiment of the semiconductor device grows in size or is highly defined, the display device can stably operate with an excellent display quality.
摘要翻译：解决的问题：为了提供一种以显示装置为代表的半导体器件，该显示装置采用氧化物半导体层，其接受大尺寸显示屏和高度定义的显示屏，并实现了优异的显示质量，稳定的操作，高可靠性。解决方案：通过使用包含Cu的导电层用于长距离布线的布线来抑制布线电阻的增加。可以防止Cu扩散，并且可以通过布置含有Cu的导电层以不与其上形成有TFT的沟道区域的氧化物半导体层重叠并且通过将导电层各自的绝缘层包围来制造具有优异的可靠性的半导体器件含有氮化硅。特别地，即使当半导体器件的一个实施例的显示装置尺寸增长或高度限定时，显示装置可以以优异的显示质量稳定地操作。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2013051423A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013051423A
公开(公告)日：2013-03-14
申请号：JP2012221050
申请日：2012-10-03
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , SAKATA JUNICHIRO , MIYAKE HIROYUKI , KUWABARA HIDEAKI , UOJI HIDEKI
IPC分类号： H01L29/786 , G02F1/1345 , G02F1/1368 , G02F1/167 , G02F1/17 , G09F9/30 , H01L21/8234 , H01L27/08 , H01L27/088 , H01L51/50
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/45
摘要： PROBLEM TO BE SOLVED: To improve the aperture ratio of a semiconductor device.SOLUTION: The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for a driver circuit, and driver circuit wiring formed of a metal. In the thin film transistor for the driver circuit, source and drain electrodes are formed of a metal, and a channel layer is formed of an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and display portion wiring formed of an oxide conductor. In the thin film transistor for the pixel, source and drain electrode layers are formed of an oxide conductor, and a semiconductor layer is formed of an oxide semiconductor. A photolithography process using a multi-tone mask can simplify a manufacturing process.
摘要翻译：要解决的问题：提高半导体器件的开口率。解决方案：半导体器件包括在同一衬底上的驱动电路部分和显示部分（也称为像素部分）。驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和由金属形成的驱动电路布线。在用于驱动电路的薄膜晶体管中，源极和漏极由金属形成，沟道层由氧化物半导体形成。显示部分包括用于像素的底接触薄膜晶体管和由氧化物导体形成的显示部分布线。在用于像素的薄膜晶体管中，源极和漏极电极层由氧化物导体形成，半导体层由氧化物半导体形成。使用多色调掩模的光刻工艺可以简化制造过程。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012199534A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2012199534A
公开(公告)日：2012-10-18
申请号：JP2012047988
申请日：2012-03-05
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： UOJI HIDEKI
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336 , H01L21/8242 , H01L21/8244 , H01L21/8247 , H01L27/108 , H01L27/11 , H01L27/115 , H01L29/423 , H01L29/47 , H01L29/49 , H01L29/788 , H01L29/792 , H01L29/872 , H01L31/10
CPC分类号： H01L29/42384 , G11C5/063 , G11C11/403 , G11C11/412 , G11C16/0433 , H01L21/84 , H01L27/10873 , H01L27/1108 , H01L27/1156 , H01L27/12 , H01L29/4908 , H01L29/78606 , H01L29/78618 , H01L29/78642 , H01L29/7869 , H01L29/78696
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which facilitates miniaturization and is less susceptible of short-channel effects.SOLUTION: A channel length less susceptible to short-channel effects can be ensured even when a transistor is miniaturized by forming a semiconductor layer having a large aspect ratio on a gate electrode in a cross-sectional shape in a channel length direction of the transistor. A lower electrode is disposed overlapping with the semiconductor layer, and underlies the gate electrode with an insulating layer interposed therebetween. A conductivity type is applied to the semiconductor layer overlapped with the lower electrode by an electric potential (electric field) of the lower electrode, and a source region and a drain region are formed in the semiconductor layer. In a region of the semiconductor layer opposed to the gate electrode with a gate insulating layer interposed therebetween, the gate electrode functions as a shield, and the region is free from the influence of the electric field of the lower electrode. That is, a channel formation region, a source region and a drain region can be formed in a self-alignment manner without using an impurity introduction step. This achieves a semiconductor device which facilitates miniaturization and is less susceptible to the short-channel effects.
摘要翻译：要解决的问题：提供一种便于小型化并且不易受短路效应的半导体器件。解决方案：即使当晶体管通过在栅极电极上形成具有大纵横比的半导体层而形成沟槽长度方向的横截面形状时，也可以确保不易受短沟道影响的沟道长度晶体管。下电极与半导体层重叠设置，并且在栅极之下设置绝缘层。通过下电极的电位（电场）将导电类型施加到与下电极重叠的半导体层，并且在半导体层中形成源区和漏区。在与栅极绝缘层相对的与栅电极相对的半导体层的区域中，栅极用作屏蔽，并且该区域不受下电极的电场的影响。也就是说，可以在不使用杂质引入步骤的情况下以自对准方式形成沟道形成区域，源极区域和漏极区域。这实现了便于小型化并且不太容易受到短沟道效应的半导体器件。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012169609A Semiconductor device and semiconductor device driving method 有权
标题翻译：半导体器件和半导体器件驱动方法
公开(公告)号：JP2012169609A
公开(公告)日：2012-09-06
申请号：JP2012012683
申请日：2012-01-25
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： UOJI HIDEKI
IPC分类号： H01L21/8242 , G11C11/401 , H01L21/28 , H01L21/336 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L27/1156 , G11C16/0425 , G11C16/26 , H01L21/28273 , H01L27/1225
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device of less occupied area thereby enabling high integration and high storage capacity.SOLUTION: A transistor having a first control gate, a second control gate and a storage gate is used. The storage gate is made to be a conductor, and after a specific potential is supplied to the storage gate, at least a part of the storage gate is made to be an insulator and to hold the potential. Information writing is performed such that each potential of the first and second control gates is made to be a potential that the storage gate is made to be the conductor, a potential of information to be stored is supplied to the storage gate and a potential of at least one of the first and the second control gates is made to be a potential that the storage gate is made to be the insulator. Information reading is performed such that a potential of the second control gate is made to be a potential that the storage gate is made to be the insulator, a potential is supplied to wiring connected to one of the source and the drain of the transistor, subsequently a potential for reading is supplied to the first control gate, and a potential of a bit line connected to the other of the source and the drain is detected.
摘要翻译：要解决的问题：提供一种占用面积较小的半导体器件，从而实现高集成度和高存储容量。解决方案：使用具有第一控制栅极，第二控制栅极和存储栅极的晶体管。存储栅极被制成导体，并且在将特定电位提供给存储栅极之后，存储栅极的至少一部分被制成绝缘体并保持电位。执行信息写入，使得第一和第二控制栅极的每个电位被制成使存储栅极成为导体的电位，将要存储的信息的电位提供给存储门，并且电位为使第一和第二控制栅极中的至少一个成为使存储栅极成为绝缘体的电位。进行信息读取，使得第二控制栅极的电位成为使存储栅极成为绝缘体的电位，然后将电位提供给连接到晶体管的源极和漏极之一的布线，随后读取的电位被提供给第一控制栅极，并且检测到连接到源极和漏极中的另一个的位线的电位。版权所有（C）2012，JPO＆INPIT

9. 发明专利

JP2011097103A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2011097103A
公开(公告)日：2011-05-12
申请号：JP2011019467
申请日：2011-02-01
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , AKIMOTO KENGO , KOMORI SHIGEKI , UOJI HIDEKI , WADA MICHIHITO , CHIBA YOKO
IPC分类号： H01L29/786 , G09F9/30
CPC分类号： H01L27/1225 , G02F1/13458 , G09G2300/0804 , H01L27/124 , H01L27/3262 , H01L27/3276 , H01L29/04 , H01L29/24 , H01L29/41733 , H01L29/66969 , H01L29/7869 , H01L51/5221
摘要： PROBLEM TO BE SOLVED: To provide a structure suitable for a pad provided on a display panel, and to prevent poor quality caused by separation of a thin film in a display device for various use, which is manufactured by stacking an oxide semiconductor, an insulation film, and a conductive film. SOLUTION: The display device includes: a pixel electrode layer, where a scanning line and a signal line cross and are disposed in a matrix; a pixel provided in accordance with the pixel electrode layer; and an inverted stagger type thin-film transistor composed by combining the pixel with at least two kinds of oxide semiconductor layers having different content of oxygen. In the display device, the pad is provided, where the pad is electrically connected to a common electrode layer opposing the pixel electrode layer by a conductive layer of the same material as a material composing the scanning line and the signal line in the outside region of the pixel. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供适合于设置在显示面板上的焊盘的结构，并且为了防止由于通过层叠氧化物半导体制造的各种用途的显示装置中的薄膜分离而导致的劣质，绝缘膜和导电膜。解决方案：显示装置包括：像素电极层，其中扫描线和信号线交叉并且被布置在矩阵中; 根据像素电极层提供的像素; 以及通过将像素与具有不同含氧量的至少两种氧化物半导体层组合而构成的倒置交错型薄膜晶体管。在显示装置中，设置焊盘，其中焊盘通过与构成扫描线的材料相同的材料的导电层和与像素电极层的外部区域中的信号线电连接到与像素电极层相对的公共电极层像素。版权所有（C）2011，JPO＆INPIT

10. 发明专利

JP2010251721A Semiconductor device, display, and electronic appliance 有权
标题翻译：半导体器件，显示器和电子设备
公开(公告)号：JP2010251721A
公开(公告)日：2010-11-04
申请号：JP2010058733
申请日：2010-03-16
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： UOJI HIDEKI , KAWAE DAISUKE
IPC分类号： H01L29/786 , G02F1/1345 , G02F1/1368
CPC分类号： H01L27/127 , G02F1/13454 , G02F1/13458 , G02F2001/13629 , H01L27/1225 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To reduce adverse effects on actual operation and to reduce adverse effects of noise. SOLUTION: A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is input from the electrode through the wiring and in which operation is controlled in accordance with the input signal. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode. COPYRIGHT: (C)2011,JPO&INPIT

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