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1. 发明专利

JP4835240B2 Semiconductor sensor device and a method of manufacturing the same 有权
公开(公告)号：JP4835240B2
公开(公告)日：2011-12-14
申请号：JP2006106185
申请日：2006-04-07
申请人：株式会社デンソー
发明人：ユミ丸山 , 祐嗣舩戸
IPC分类号： H01L23/02 , G01P15/08 , H01L29/84
CPC分类号： H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2924/16235 , H01L2924/00

2. 发明专利

JP4329275B2 Dynamic quantity sensor 有权
公开(公告)号：JP4329275B2
公开(公告)日：2009-09-09
申请号：JP2001105161
申请日：2001-04-03
申请人：株式会社デンソー
发明人：祐嗣舩戸 , 峰一酒井 , 正紀青山
IPC分类号： G01L1/14 , H01L29/84 , G01P15/125
CPC分类号： G01P2015/0814

3. 发明专利

JP5332211B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：空值
公开(公告)号：JP5332211B2
公开(公告)日：2013-11-06
申请号：JP2008010243
申请日：2008-01-21
申请人：株式会社デンソー
发明人：伸一広瀬 , 宰高橋 , 祐嗣舩戸 , 真嗣今田
IPC分类号： H01L21/60 , H01L25/065 , H01L25/07 , H01L25/18
CPC分类号： H01L24/97 , H01L24/73 , H01L2224/32245 , H01L2224/45 , H01L2224/45015 , H01L2224/45144 , H01L2224/48 , H01L2224/4809 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48465 , H01L2224/48511 , H01L2224/48599 , H01L2224/49171 , H01L2224/73265 , H01L2224/78 , H01L2224/78301 , H01L2224/85 , H01L2224/85045 , H01L2224/85099 , H01L2224/85181 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/20752 , H01L2924/30105 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device disposed on an island which is connected to a peripheral terminal part with a bonding wire and sealed by a mold resin so as to suppress wire sweeps and deflection to the downward direction of wires as much as possible, thus preventing short circuit between neighboring bonding wires, even if the wire length L is ≥6 mm. SOLUTION: A first bending point 41, a second bending point 42, a third bending point 43 and a fourth bending point 44 are provided between a connecting part on a side of semiconductor device 30 on a wire 40 and a connecting part on a side of a terminal part 20. When looked from above the semiconductor device 30, a distance L2 between the connecting part on the side of the semiconductor device 30 on the wire 40 and the second bending point 42, a distance L3 between the connecting point and the third bending point 43, and a distance L4 between the connecting point and the fourth bending point 44 are 0.25L≥L2≥0.35L, 0.5L≥L3≥0.6L, and 0.85L≥L4≥0.95L respectively to the entire length L of the wire. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种设置在岛上的半导体器件，其通过接合线连接到外围端子部分并被模制树脂密封，以便抑制电线扫掠和向线的向下方向的偏转即使电线长度L≥6mm，也能够防止相邻接合线之间的短路。解决方案：第一弯曲点41，第二弯曲点42，第三弯曲点43和第四弯曲点44设置在导线40上的半导体器件30的一侧上的连接部分和连接部分之间当从半导体器件30的上方观察时，线40上的半导体器件30侧的连接部与第二弯曲点42之间的距离L2，连接点第三弯曲点43和连接点与第四弯曲点44之间的距离L4分别为0.25L≥L2≥0.35L，0.5L≥L3≥0.6L，0.85L≥L4≥0.95L 电线长度L。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP4305354B2 Semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP4305354B2
公开(公告)日：2009-07-29
申请号：JP2004290133
申请日：2004-10-01
申请人：株式会社デンソー
发明人：安史樋口 , 祐嗣舩戸 , 和夫赤松
IPC分类号： H01L21/60 , H01L21/3205 , H01L23/52
CPC分类号： H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/04042 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/1305 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/48
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which adhesiveness life of a Cu electrode layer and an organic resin film can be improved much more than a conventional one and to provide a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device includes a power device, the Cu electrode layer 2 on the power device and the organic resin film 3 covering the Cu electrode layer 2. A Cu nitride film 8 is disposed to cover a whole region of surfaces (upper face 2a and sides 2b) of the Cu electrode layer 2. A main cause for deteriorating adhesiveness of the Cu electrode layer 2 and the organic resin film 3 is generation of an oxide film on the surface of the Cu electrode layer 2 since oxygen passing through the organic resin film 3 reacts to the Cu electrode layer 2. Thus, the Cu nitride film 8 suppressing transmission of oxygen is arranged in a region between the Cu electrode layer 2 and the organic resin film 3. Consequently, adhesiveness life of the Cu electrode layer and the organic resin film can be improved much more than the conventional one. COPYRIGHT: (C)2006,JPO&NCIPI

6. 发明专利

JP4924308B2 Vertical Hall element 有权
公开(公告)号：JP4924308B2
公开(公告)日：2012-04-25
申请号：JP2007232449
申请日：2007-09-07
申请人：株式会社デンソー
发明人：聡大平 , 祐嗣舩戸
IPC分类号： H01L43/06 , G01R33/07
CPC分类号： G01R33/077

7. 发明专利

JP4826773B2 Laser dicing method 有权
公开(公告)号：JP4826773B2
公开(公告)日：2011-11-30
申请号：JP2006225395
申请日：2006-08-22
申请人：株式会社デンソー
发明人：篤小邑 , 和彦杉浦 , 宗生田村 , 祐嗣舩戸
IPC分类号： B23K26/38 , B23K26/40 , B23K101/40 , B28D5/00 , H01L21/301
摘要： PROBLEM TO BE SOLVED: To provide a laser dicing method capable of performing a proper cut-off work while reducing a forming range of a reformed layer. SOLUTION: In a laser dicing method 20, a forming space Sb of a reformed layer kb positioned in a pressure side range hb is set more narrowly than a forming space Sa of the reformed layer ka positioned in an incident side range ha at an opposite side thereof. Thereby, since the reformed layer kb is formed concentrated in the pressure side range hb on the side near a rear surface Wb pressurized at the time of cut-off work, although the reformed layer ka is formed in the incident side range ha on the side far from the rear surface Wb pressurized in the cut-off work, the cut-off work becomes possible without increasing more crack density than what is necessary, owing to a succession of cracks starting from the pressure side range hb on the side near the rear surface Wb. Therefore, it becomes possible to perform the proper cut-off work while reducing the number of the reformed layers ka compared with the case of forming as much reformed layers ka, kb as possible in the direction of thickness of the cut-off portion Dev. COPYRIGHT: (C)2007,JPO&INPIT

8. 发明专利

JP4779726B2 Method of manufacturing a semiconductor chip 有权
公开(公告)号：JP4779726B2
公开(公告)日：2011-09-28
申请号：JP2006067580
申请日：2006-03-13
申请人：株式会社デンソー
发明人：ユミ丸山 , 篤小邑 , 祐嗣舩戸
IPC分类号： H01L23/02 , G01P15/08 , H01L29/84

9. 发明专利

JP5135978B2 High voltage ic 有权
公开(公告)号：JP5135978B2
公开(公告)日：2013-02-06
申请号：JP2007259145
申请日：2007-10-02
申请人：株式会社デンソー
发明人：祐嗣舩戸
IPC分类号： H01L21/822 , H01L27/04 , H02M7/5387

10. 发明专利

JP5115295B2 Semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP5115295B2
公开(公告)日：2013-01-09
申请号：JP2008103099
申请日：2008-04-11
申请人：株式会社デンソー
发明人：祐嗣舩戸
IPC分类号： H01L23/12

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