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2. 发明专利

JP4648061B2 Electric field modulation type single-electron transistor 有权
公开(公告)号：JP4648061B2
公开(公告)日：2011-03-09
申请号：JP2005119782
申请日：2005-04-18
申请人：日本電信電話株式会社
发明人：行徳小野 , 洋猪川 , 聡藤原 , 克彦西口
IPC分类号： H01L29/786 , H01L29/66

3. 发明专利

JP5545735B2 Magneto-electric effect element 有权
公开(公告)号：JP5545735B2
公开(公告)日：2014-07-09
申请号：JP2010162612
申请日：2010-07-20
申请人：日本電信電話株式会社
发明人：博之影島 , 浩樹日比野 , 雅夫永瀬 , 佳明関根 , 浩司山口 , 聡藤原
IPC分类号： H01L29/66 , B82B1/00 , C01B31/02 , H01L29/06 , H01L29/82
摘要： PROBLEM TO BE SOLVED: To enable formation of an element having a magnetoelectric effect under more stable state with a simple method.SOLUTION: A magnetoelectric effect element has a base portion 101 formed of atoms which can bond carbon atoms, and a first carbon area having a zig-zag type end portion which is formed on a part of the surface of the base portion 101 and in which carbon atoms bond the surface of the base portion 101 in only the plane direction. The end portion of the first carbon area extending from the front side of the back side on the paper surface of Fig. 1 is designed in a zig-zag shape. There is provided a bonding area 103 which is formed on a part of the surface of the base portion 101 and constructed by bonding of atoms bondable to carbon atoms in the plane direction of the surface of the base portion 101 and in the depth direction of the base portion 101, and bond the end portion of the first carbon area 102, thereby connecting the first carbon area 102 to the base portion 101.

4. 发明专利

JP5345985B2 Sensor 有权
公开(公告)号：JP5345985B2
公开(公告)日：2013-11-20
申请号：JP2010180798
申请日：2010-08-12
申请人：日本電信電話株式会社
发明人：克彦西口 , 聡藤原
IPC分类号： G01D3/028 , G01R19/00
摘要： PROBLEM TO BE SOLVED: To detect a fine signal at a high speed without making the whole system complex. SOLUTION: The sensor includes a first field effect transistor 101 composed of a first thin wire channel 101a, a second field effect transistor 102 composed of a second thin wire channel 102a, a charge storage part 103 connected to one end of the first thin wire channel 101a and connected to the second thin wire channel 102a through capacitance, an electron sink part 104 connected to the other end of the first thin wire channel 101a, a stored charge control part 105 which controls injection of electric charge into the charge storage part 103 from the electron sink part 104 by controlling a charge injection control voltage to a gate electrode of the first field effect transistor 101 and the electron sink part 104, and a current detection part 106 which detects change in value of a current flowing to the second field effect transistor 102 which is made as a result of the control by the stored charge control part 105. COPYRIGHT: (C)2012,JPO&INPIT

8. 发明专利

JP3706220B2 Information processing method and information processing apparatus 失效
公开(公告)号：JP3706220B2
公开(公告)日：2005-10-12
申请号：JP6616297
申请日：1997-03-19
申请人：日本電信電話株式会社
发明人：克実村瀬 , 雅夫永瀬 , 聡藤原 , 庸夫高橋
IPC分类号： G11C11/42 , H01L27/10 , H01L29/66
CPC分类号： G11C2216/08

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