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    • 3. 发明专利
    • Signal transmission circuit and power conversion equipment
    • JP5353395B2
    • 2013-11-27
    • JP2009096192
    • 2009-04-10
    • 富士電機株式会社
    • 弘幸 吉村
    • H02M1/08
    • PROBLEM TO BE SOLVED: To improve the accuracy of transmission of a transmitting signal by eliminating the influence of noise accompanying a change in a magnetic field. SOLUTION: A signal transmitting circuit includes a set pulse gate circuit 12a, which is closed for a predetermined time from the point of time when the pulses of a set signal S102 pass. It prevents the pulses of the set signal S102 from being transmitted to an N-channel field effect transistor Tr1, at an interval which is shorter than the predetermined time, thereby limiting the excitation interval of the exciting coil of the insulating transformer TL1 for setting. It includes a reset pulse gate circuit 12c, which is open until the pulses of the reset signal S103 pass immediately after the pulses of the set signal S102 pass. It prevents noise from being transmitted to an N-channel field effect transistor Tr2 as pulses of the reset signals S103 by mistake after the pulses of the reset signal S103 pass, while surely passing the pulses of the reset signal S103 corresponding to the set signal S102. COPYRIGHT: (C)2011,JPO&INPIT
    • 5. 发明专利
    • Temperature measuring device of power semiconductor device
    • JP5360019B2
    • 2013-12-04
    • JP2010186545
    • 2010-08-23
    • 富士電機株式会社
    • 弘幸 吉村
    • G01K7/00G01K7/01
    • PROBLEM TO BE SOLVED: To provide temperature measurement equipment of a power semiconductor device capable of simultaneously detecting the disconnection abnormality and short-circuit abnormality of a temperature detection part in a power semiconductor device. SOLUTION: A pulse width modulation circuit 76 installed in chip temperature detection circuits 13 and 14 for detecting the chip temperature of a power semiconductor device configured such that power switching elements 5 and 6 and diodes DU2 and DD2 for temperature detection are installed in a silicon chip includes a triangular wave generation circuit 78 and a comparator IC5 for comparing a triangular wave signal output from the triangular wave generation circuit with an input signal to output a pulse width modulation signal. The upper limit value and lower limit value of the triangular wave signal to be output from the triangular wave generation circuit 78 are set beyond the range of the forward voltage of the diodes for temperature detection when constant currents within the temperature measurement range of the power switching elements are supplied. COPYRIGHT: (C)2012,JPO&INPIT