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1. 发明专利

JP5222804B2 The resist composition and pattern forming method using the same 有权
公开(公告)号：JP5222804B2
公开(公告)日：2013-06-26
申请号：JP2009159317
申请日：2009-07-03
申请人：富士フイルム株式会社
发明人：陽樹稲部 , 慎一漢那 , 表高橋 , 博美神田
IPC分类号： G03F7/004 , C08F216/14 , C08F220/06 , C08F220/28 , C08F222/06 , C08F232/04 , C08F234/02 , G03F7/039 , G03F7/38 , H01L21/027

2. 发明专利

JP5114021B2 Pattern forming method 有权
标题翻译：空值
公开(公告)号：JP5114021B2
公开(公告)日：2013-01-09
申请号：JP2006157227
申请日：2006-06-06
申请人：富士フイルム株式会社
发明人：慎一漢那 , 陽樹稲部 , 博美神田
IPC分类号： G03F7/039 , G03F7/38 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; and (v) a step of developing the resist coating.
摘要翻译：使用正性抗蚀剂组合物的图案形成方法包括：（A）能够在酸的作用下增加其在碱性显影剂中的溶解度的无氟树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）具有选自（X）碱溶性基团（XI）中的至少一种基团的含氟树脂，（XI）能够在碱性显影剂的作用下分解的基团和增加树脂的溶解度（C ）和（XII）能够在酸的作用下分解并增加树脂（C）在碱性显影剂中的溶解度的基团; 和（D）溶剂，所述方法包括：（i）将正性抗蚀剂组合物施加到基材以形成抗蚀剂涂层的步骤; （ii）通过浸没液体使抗蚀剂涂层曝光的步骤; （iii）去除残留在抗蚀剂涂层上的浸渍液体的步骤; （iv）加热抗蚀剂涂层的步骤; 和（v）开发抗蚀剂涂层的步骤。

3. 发明专利

JP4551706B2 Protective film-forming composition for immersion exposure and a pattern forming method using the same 有权
公开(公告)号：JP4551706B2
公开(公告)日：2010-09-29
申请号：JP2004209569
申请日：2004-07-16
申请人：富士フイルム株式会社
发明人：慎一漢那 , 博美神田 , 陽樹稲部
IPC分类号： G03F7/11 , G03F7/039 , G03F7/38 , H01L21/027

4. 发明专利

JP4551704B2 Protective film-forming composition for immersion exposure and a pattern forming method using the same 有权
公开(公告)号：JP4551704B2
公开(公告)日：2010-09-29
申请号：JP2004201457
申请日：2004-07-08
申请人：富士フイルム株式会社
发明人：慎一漢那 , 博美神田 , 陽樹稲部
IPC分类号： G03F7/11 , G03F7/039 , G03F7/38 , H01L21/027
CPC分类号： G03F7/11 , G03F7/2041

5. 发明专利

JP5300651B2 Colored curable composition, color filter and a method for producing the same, a solid-state imaging device 有权
公开(公告)号：JP5300651B2
公开(公告)日：2013-09-25
申请号：JP2009187193
申请日：2009-08-12
申请人：富士フイルム株式会社
发明人：陽樹稲部 , 慎一漢那
IPC分类号： G03F7/004 , G02B5/20
摘要： PROBLEM TO BE SOLVED: To provide a colored curable composition in which decolorization liable to occur when a dye is used as a colorant is prevented from occurring. SOLUTION: The colored curable composition comprises: at least (A-1) a complex in which a compound represented by general formula (I) coordinates with a metal atom or a metal compound; (A-2) a phthalocyanine pigment; (B) a dispersant; (C) a crosslinking agent which initiates crosslinking by the action of an acid; (D) a photoacid generator; and (E) an organic solvent, wherein R 1 to R 6 are a hydrogen atom or a substituent, and R 7 is a hydrogen atom, a halogen atom, alkyl, aryl or a heterocyclic group. COPYRIGHT: (C)2011,JPO&INPIT

6. 发明专利

JP5216893B2 The positive resist composition and pattern forming method using the same 有权
公开(公告)号：JP5216893B2
公开(公告)日：2013-06-19
申请号：JP2011103879
申请日：2011-05-06
申请人：富士フイルム株式会社
发明人：博美小林 , 慎一漢那 , 陽樹稲部
IPC分类号： G03F7/004 , C08F220/16 , C08F220/22 , C08F220/28 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition and a method of pattern formation using the composition, the positive resist composition improved in performances relating to a pattern profile, pattern falling and scum and excellent in a receding contact angle with an immersion liquid and water following-up property. SOLUTION: The positive resist composition comprises: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or radiation; (C) a fluorine-containing compound containing at least one group selected from the following groups (x) to (z); and (F) a solvent. The method of pattern formation is carried out by using the above composition. The groups are: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance the solubility in the alkaline developing solution; and (z) a group which decomposes by an action of an acid. COPYRIGHT: (C)2011,JPO&INPIT

7. 发明专利

JP5216892B2 Pattern forming method using the positive resist composition 有权
公开(公告)号：JP5216892B2
公开(公告)日：2013-06-19
申请号：JP2011103878
申请日：2011-05-06
申请人：富士フイルム株式会社
发明人：博美小林 , 慎一漢那 , 陽樹稲部
IPC分类号： G03F7/004 , C08F20/24 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition and a method of pattern formation using the composition, the positive resist composition improved in performances relating to a pattern profile, pattern falling and scum and excellent in a receding contact angle with an immersion liquid and water following-up property. SOLUTION: The positive resist composition comprises: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or radiation; (C) a fluorine-containing compound containing at least one group selected from the following groups (x) to (z); and (F) a solvent. The method of pattern formation is carried out by using the above composition. The groups are: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance the solubility in the alkaline developing solution; and (z) a group which decomposes by an action of an acid. COPYRIGHT: (C)2011,JPO&INPIT

8. 发明专利

JP5114022B2 Pattern forming method 有权
标题翻译：空值
公开(公告)号：JP5114022B2
公开(公告)日：2013-01-09
申请号：JP2006157228
申请日：2006-06-06
申请人：富士フイルム株式会社
发明人：慎一漢那 , 陽樹稲部 , 博美神田
IPC分类号： G03F7/039 , G03F7/075 , G03F7/38 , H01L21/027
CPC分类号： G03F7/0758 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/111
摘要： A pattern forming method which uses a positive resist composition comprises: (A) a silicon-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a silicon-containing resin having at least one group selected from the group of consisting (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkaline developer and increasing solubility of the resin (C) in an alkaline developer, and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer, and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating, (ii) a step of exposing the resist coating to light via an immersion liquid, (iii) a step of removing the immersion liquid remaining on the resist coating, (iv) a step of heating the resist coating, and (v) a step of developing the resist coating.
摘要翻译：使用正性抗蚀剂组合物的图案形成方法包括：（A）能够在酸作用下增加其在碱性显影剂中的溶解度的无硅树脂; （B）能够在用光化射线或辐射照射时能产生酸的化合物; （C）具有选自（X）碱溶性基团中的至少一种的基团的含硅树脂（XI）能够在碱性显影剂的作用下分解的基团和增加树脂的溶解度（C ）和（XII）能够在酸的作用下分解并增加树脂（C）在碱性显影剂中的溶解度的基团，和（D）溶剂，该方法包括：（i）步骤将正性抗蚀剂组合物施加到基材上以形成抗蚀剂涂层，（ii）通过浸渍液体将抗蚀剂涂层曝光于光的步骤，（iii）去除残留在抗蚀剂涂层上的浸渍液体的步骤，（iv ）加热抗蚀剂涂层的步骤，和（v）显影抗蚀涂层的步骤。

9. 发明专利

JP4861781B2 The positive resist composition and pattern forming method using the same 有权
公开(公告)号：JP4861781B2
公开(公告)日：2012-01-25
申请号：JP2006247832
申请日：2006-09-13
申请人：富士フイルム株式会社
发明人：慎一漢那 , 博美神田 , 陽樹稲部
IPC分类号： G03F7/039 , G03F7/004 , G03F7/075 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition that is not only excellent in line edge roughness but also excellent in water following performance, and to provide a pattern-forming method using the same. SOLUTION: A positive resist composition comprises (A) a resin in which its solubility in an alkali developer is increased by action of an acid and which does not contain a silicon atom, (B) a compound that generates an acid upon irradiation with actinic ray or radiation, (C) a silicon atom-containing resin having at least one group selected from groups (X) to (Z), and (D) a solvent, wherein: (X) is an alkali-soluble group; (Y) is a group capable of decomposing by action of an alkali developer to increase the solubility of resin (C) in an alkali developer; and (Z) is a group capable of decomposing by action of an acid to increase the solubility of resin (C) in an alkali developer. The pattern forming method using the same is also provided. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP4317772B2 The resist composition and pattern forming method using the same 有权
公开(公告)号：JP4317772B2
公开(公告)日：2009-08-19
申请号：JP2004044763
申请日：2004-02-20
申请人：富士フイルム株式会社
发明人：慎一漢那 , 博美神田 , 陽樹稲部 , 文之西山 , 表高橋
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20 , H01L21/027

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