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1. 发明专利

JP2012209470A Semiconductor device, semiconductor device module, and manufacturing method of the semiconductor device 审中-公开
标题翻译：半导体器件，半导体器件模块和半导体器件的制造方法
公开(公告)号：JP2012209470A
公开(公告)日：2012-10-25
申请号：JP2011074909
申请日：2011-03-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TADA KAZUHIRO , YAMAMOTO KEI
IPC分类号： H01L23/29 , H01L23/28 , H01L23/31 , H01L23/34
CPC分类号： H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/49111 , H01L2224/73265 , H01L2224/92247 , H01L2924/01047 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To secure adhesiveness between a semiconductor element and a sealing resin sealing the semiconductor element and a heat sink and reduce the reverse warpage of the semiconductor device sealed by the sealing resin in the semiconductor device where the semiconductor element is mounted on the heat sink.SOLUTION: A semiconductor element 1 is mounted on one surface of a heat sink 3 made of copper or a metal composed mainly of copper. The semiconductor element 1 is resin-sealed by a sealing resin 8, and the sealing resin 8 includes a first sealing resin 8a and a second sealing resin 8b having a larger heat expansion coefficient than the first sealing resin 8a. The first sealing resin 8a is formed so as to cover the semiconductor element 1, and the second sealing resin 8b is formed at the outer side of the first sealing resin 8a.
摘要翻译：要解决的问题：为了确保半导体元件与密封半导体元件和散热器的密封树脂之间的粘合性，并且减小半导体元件为半导体元件的半导体器件中的密封树脂密封的半导体器件的反向翘曲安装在散热器上。解决方案：半导体元件1安装在由铜或主要由铜组成的金属制成的散热器3的一个表面上。半导体元件1由密封树脂8树脂密封，密封树脂8包括第一密封树脂8a和具有比第一密封树脂8a更大的热膨胀系数的第二密封树脂8b。第一密封树脂8a形成为覆盖半导体元件1，第二密封树脂8b形成在第一密封树脂8a的外侧。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2010123711A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2010123711A
公开(公告)日：2010-06-03
申请号：JP2008295243
申请日：2008-11-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TADA KAZUHIRO , HIRAMATSU SEIKI , NISHIMURA TAKASHI
IPC分类号： H01L23/34
CPC分类号： H01L21/565 , H01L24/73 , H01L2224/32245 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can have characteristics improved, and to provide a method of manufacturing the same. SOLUTION: A power module 10 includes power semiconductor chips 1 and 2 having top surfaces 1a and 2a, a sealing resin 4 which covers at least the top surfaces 1a and 2a of the power semiconductor chips 1 and 2, and a metal layer 3 which is formed on sides of the top surfaces 1a and 2a and on an external surface of the sealing resin 4. The metal layer 3 is formed preferably of copper or aluminum. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种能够提高特性的半导体器件，并提供其制造方法。解决方案：功率模块10包括具有顶表面1a和2a的功率半导体芯片1和2，至少覆盖功率半导体芯片1和2的顶表面1a和2a的密封树脂4和金属层 3形成在顶表面1a和2a的侧面以及密封树脂4的外表面上。金属层3优选由铜或铝形成。版权所有（C）2010，JPO＆INPIT

3. 发明专利

JP2015041716A 電力用半導体装置および電力用半導体装置の製造方法有权
标题翻译：功率半导体器件的功率半导体器件的制造方法和功率半导体器件的制造方法
公开(公告)号：JP2015041716A
公开(公告)日：2015-03-02
申请号：JP2013172873
申请日：2013-08-23
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： BETSUSHIBA NORIYUKI , NAKAJIMA YASUSHI , ISHII RYUICHI , TADA KAZUHIRO
IPC分类号： H01L25/07 , H01L23/36 , H01L25/18 , H02M7/48
CPC分类号： H01L24/33 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/13055 , H01L2924/15787 , H01L2924/351 , H01L2924/00014 , H01L2924/00
摘要：【課題】高温に対応する信頼性の高い電力用半導体装置を得ることを目的とする。【解決手段】一方の面にセラミックの基材2iの所定領域を覆う導体層2aが形成され、他方の面に冷却部材4が接合された回路基板2と、前記所定領域に内包されるように、裏面が導体層2aに接合された電力用半導体素子3と、一端部が電力用半導体素子3の表面に接合された電極端子6aと、電力用半導体素子3および電極端子6aの少なくとも前記一端部を覆う封止樹脂12と、を備え、封止樹脂12は、熱硬化性樹脂を主体とするとともに、基材2iよりも導体層2aまたは電極端子6aに近い線膨張係数を有し、かつ前記所定領域の範囲内に形成されている。【選択図】図1
摘要翻译：要解决的问题：提供可靠地处理高温的功率半导体器件。解决方案：功率半导体器件包括电路基板2，其中形成用于覆盖陶瓷基材2i的规定区域的导体层2a 电路基板的一个面，并且冷却部件接合到另一个面; 功率半导体元件3，其后面接合到导体层2a; 一端与功率半导体元件3的表面接合的电极端子6a; 以及用于覆盖功率半导体元件3和至少电极端子6a的一端的密封树脂12。密封树脂12主要由热塑性树脂构成，具有比基体材料2i更接近于导体层2a或电极端子6a的线膨胀系数，并且形成在规定区域的范围内。

4. 发明专利

JP2013145820A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013145820A
公开(公告)日：2013-07-25
申请号：JP2012005906
申请日：2012-01-16
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： OKA SEIJI , TADA KAZUHIRO , YOSHIDA HIROSHI
IPC分类号： H01L23/28 , H01L23/12
CPC分类号： H01L21/3043 , H01L21/561 , H01L21/78 , H01L23/142 , H01L23/3121 , H01L23/49811 , H01L24/48 , H01L24/49 , H01L24/97 , H01L25/072 , H01L25/50 , H01L29/02 , H01L2224/48227 , H01L2224/49111 , H01L2224/49113 , H01L2224/97 , H01L2924/00014 , H01L2924/181 , H01L2224/45099 , H01L2224/85 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To improve the reliability of a semiconductor device which is manufactured in a collective transfer mold method.SOLUTION: A semiconductor device 100 includes: a metal substrate 10 including a metal base plate 1, an insulation sheet 2 disposed on the metal base plate 1, and a wiring pattern 3 disposed on the insulation sheet 2; and a semiconductor element 4 disposed on the metal substrate 10. The semiconductor element 4 is sealed by a mold resin 8. The mold resin 8 extends to a side surface of the metal substrate 10. On the side surface of the metal substrate 10, the insulation sheet 2 and the wiring pattern 3 are not exposed from the mold resin 8. On the other hand, the metal base plate 1 has an extending part 1a exposed from the mold resin 8.
摘要翻译：要解决的问题：提高以集体转印模制法制造的半导体器件的可靠性。解决方案：半导体器件100包括：金属基板10，其包括金属基板1，绝缘片2设置在金属基板1和布置在绝缘片2上的布线图案3; 以及设置在金属基板10上的半导体元件4.半导体元件4由模制树脂8密封。模制树脂8延伸到金属基板10的侧表面。在金属基板10的侧表面上，绝缘片2和布线图案3不会从模制树脂8露出。另一方面，金属底板1具有从模制树脂8露出的延伸部分1a。

5. 发明专利

JP2011006586A Thermosetting resin composition, thermal conductive resin sheet, manufacturing method thereof and power module 有权
标题翻译：热固性树脂组合物，导热树脂片，其制造方法和功率模块
公开(公告)号：JP2011006586A
公开(公告)日：2011-01-13
申请号：JP2009151905
申请日：2009-06-26
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKIGAWA HIDEKI , MIMURA KENJI , HAMANO KOJI , NISHIMURA TAKASHI , TADA KAZUHIRO , HIRAMATSU SEIKI , FUJINO ATSUKO , YAMAMOTO KEI , MASAKI MOTOKI
IPC分类号： C08L101/00 , C08J5/18 , C08K3/38 , H01L23/36
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48464 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a thermosetting resin composition which is advantageous from the viewpoint of productivity and cost and gives a thermal conductive resin sheet excellent in thermal conductivity and electrical insulation properties.SOLUTION: The thermosetting resin composition contains an inorganic filler in a thermosetting resin and the inorganic filler includes a secondary aggregate (A) composed of primary particles of boron nitride having an average major axis of not greater than 8 μm and a secondary aggregate (B) composed of primary particles of boron nitride having an average major axis of greater than 8 μm to not greater than 20 μm at a volume ratio of 40:60 to 98:2, and the content of the inorganic filler is 40 to 80 vol.%.
摘要翻译：要解决的问题：提供从生产率和成本的观点来看是有利的热固性树脂组合物，并且提供导热性和电绝缘性优异的导热树脂片。溶解性：热固性树脂组合物含有热固性树脂组合物中的无机填料树脂和无机填料包括由平均长轴不大于8μm的氮化硼的一次粒子构成的二次聚集体（A）和由平均主轴为以40:60〜98:2的体积比大于8μm〜20μm，无机填料的含量为40〜80体积％。

6. 发明专利

JP2007027261A Power module 审中-公开
标题翻译：电源模块
公开(公告)号：JP2007027261A
公开(公告)日：2007-02-01
申请号：JP2005204463
申请日：2005-07-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TADA KAZUHIRO , TANDA TETSUSHI , YAMAMOTO KEI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/32245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/49111 , H01L2224/49175 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To obtain a transfer molded power module exhibiting excellent heat dissipation properties in which cracking and detachment are prevented. SOLUTION: In the transfer molded power module where one power semiconductor element 2 is mounted on each of a plurality of wiring ceramic substrates 1, the wiring ceramic substrate 1 is obtained by forming a wiring layer 1b on a ceramic substrate 1a. A bonding member 3a is bonded to the ceramic substrate 1a of the wiring ceramic substrate 1, a bonding member 3b is bonded to the wiring layer 1b, and a bonding member 3c is bonded to the wiring layer 1b and other wiring ceramic substrate 1. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：获得具有优异的散热性能的传递模塑功率模块，其中防止开裂和脱离。解决方案：在多个布线陶瓷基板1的每一个上安装有一个功率半导体元件2的传输模制功率模块中，通过在陶瓷基板1a上形成布线层1b来获得布线陶瓷基板1。接合部件3a接合到布线陶瓷基板1的陶瓷基板1a上，接合部件3b接合到布线层1b，接合部件3c接合到布线层1b和其它布线陶瓷基板1上。 P>版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2005109100A Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2005109100A
公开(公告)日：2005-04-21
申请号：JP2003339730
申请日：2003-09-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： HAYASHI KENICHI , KAWATO HISASHI , TAKESHITA TATSUYUKI , FUNAKOSHI NOBUHITO , OZAKI HIROYUKI , TADA KAZUHIRO
IPC分类号： H01L23/29 , H01L21/56 , H01L23/28 , H01L23/36 , H01L23/433 , H01L23/495 , H01L23/50
CPC分类号： H01L21/565 , H01L23/4334 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49113 , H01L2924/00014 , H01L2924/01079 , H01L2924/13055 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power in which the heat radiation characteristic is superior, insulating properties are high, and further a miniaturization is possible.
SOLUTION: The semiconductor device composed of a resin-molded chip, contains a frame which comprises a front and rear surface and includes a die pad; a power chip mounted on the surface of the die pad; an insulating resin sheet which comprises a first surface and a second surface which face each other, and in which the rear surface of the die pad is disposed so as to come into contact with its first surface; and a molded resin formed on the first surface of the resin sheet so as to encapsulate the power chip. The heat conductivity of the resin sheet is greater than that of the molded resin.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：为了提供散热特性优良的绝缘性能高的电力半导体装置，进一步小型化是可能的。解决方案：由树脂模制芯片组成的半导体器件包括一个包括前表面和后表面并且包括管芯焊盘的框架; 功率芯片安装在芯片焊盘的表面上; 绝缘树脂片，其包括彼此面对的第一表面和第二表面，并且其中芯片垫的后表面设置成与其第一表面接触; 以及形成在树脂片的第一表面上以封装功率芯片的模制树脂。树脂片的导热率大于模塑树脂的导热率。版权所有（C）2005，JPO＆NCIPI

8. 发明专利

JP2004335816A Electric power semiconductor device 审中-公开
公开(公告)号：JP2004335816A
公开(公告)日：2004-11-25
申请号：JP2003131072
申请日：2003-05-09
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MIMURA KENJI , IN GIYOUKO , TADA KAZUHIRO , SHIODA HIRONORI
IPC分类号： H01L23/29 , H01L23/31
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To obtain an electric semiconductor device improved in a dielectric strength and electric characteristics. SOLUTION: The electric power semiconductor device is obtained by sealing an electric power semiconductor chip 3 mounted on a substrate 1, by a sealing resin 4 through a coating material film 6. In this case, the sealing resin 4 is a phenol curing type epoxy resin composition, and the coating material film 6 is formed of polyimide having phenol group, while the phenol group of the coating material reacts chemically and simultaneously with the phenol curing type epoxy resin, during forming the sealing, and is connected chemically with the epoxy resin whereby adhesiveness with the epoxy resin becomes firm. COPYRIGHT: (C)2005,JPO&NCIPI

9. 发明专利

JP2014116366A Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014116366A
公开(公告)日：2014-06-26
申请号：JP2012267505
申请日：2012-12-06
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAMOTO KEI , TADA KAZUHIRO , KITAI KIYOFUMI , YOSHIHARA HIROYUKI
IPC分类号： H01L21/56 , H01L25/00 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48137 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which enables uniform formation of an encapsulation resin by inhibiting a jetting phenomenon occurring due to an increase in injection rate of the resin with an increase in size of the semiconductor device thereby to improve insulation reliability.SOLUTION: A semiconductor device comprises: a metallic member 2 on which a semiconductor element 20 is mounted on one surface; a printed wiring board 3 which is arranged opposite to the metallic member 2 and has convex parts 13 at least on one side, and on which an electric component 4 is mounted; and an encapsulation resin 10 for encapsulating the metallic member 2 and the printed wiring board 3. The encapsulation resin 10 is encapsulated by use of a mold 21 and injected from injection ports 16 of the mold 21, which are opposite to the convex parts 13.
摘要翻译：要解决的问题：提供一种能够通过抑制由于半导体器件的尺寸增大而导致的树脂注入速率增加而产生的喷射现象而能够均匀地形成封装树脂的半导体器件，从而提高绝缘可靠性。：半导体器件包括：金属部件2，半导体元件20安装在其上的一个表面上; 印刷电路板3，其与金属构件2相对地布置，并且至少在一侧具有凸部13，并且安装有电气部件4; 以及用于封装金属构件2和印刷线路板3的封装树脂10.密封树脂10通过使用模具21进行封装，并从模具21的与凸部13相对的注入口16注入。

10. 发明专利

JP2011199110A Power semiconductor device and manufacturing method thereof 有权
标题翻译：功率半导体器件及其制造方法
公开(公告)号：JP2011199110A
公开(公告)日：2011-10-06
申请号：JP2010065906
申请日：2010-03-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YAMAMOTO KEI , TADA KAZUHIRO
IPC分类号： H01L23/29 , H01L21/56 , H01L23/31 , H01L23/50
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor to which a Si semiconductor device is mounted, and which is made compact and has a large capacity, and a power semiconductor device suppressed in the generation of thermal stress in a hard heat cycle environment of a power semiconductor device in which a high-temperature operation adapted semiconductor device such as a power semiconductor in which a SiC semiconductor device capable of operating at a high temperature is mounted is employed.SOLUTION: The power semiconductor device comprises a semiconductor device 2, a lead frame 3 to which the semiconductor device 2 is mounted, and metal materials 6, 9 arranged on the lead frame 3 via an insulating sheet 5 which are sealed by a sealing resin 7. Metal materials 6, 9 are exposed, and a resin composition layer 8 is formed on the surface of the insulating resin 7 opposite to the metal materials 6, 9 across the semiconductor device 2. A filling rate for an inorganic filler of the resin composition layer 8 is smaller than or equal to that of the sealing resin 7.
摘要翻译：要解决的问题：为了提供安装有Si半导体器件的功率半导体，并且其制造紧凑并且具有大容量，并且功率半导体器件抑制了在热循环的硬热循环环境中产生热应力采用其中安装诸如功率半导体的高温操作适配半导体器件的功率半导体器件，其中安装了能够在高温下操作的SiC半导体器件。解决方案：功率半导体器件包括半导体器件2，引线安装半导体器件2的框架3以及通过由密封树脂7密封的绝缘片5布置在引线框架3上的金属材料6,9。暴露金属材料6,9，并且树脂组合物层在绝缘树脂7的与半导体器件2的金属材料6,9相对的表面上形成有图8所示的树脂组合物的填充率贴合层8小于或等于密封树脂7的厚度。

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