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1. 发明专利

JP2011208168A Method for manufacturing sputtering target 有权
标题翻译：制造喷射目标的方法
公开(公告)号：JP2011208168A
公开(公告)日：2011-10-20
申请号：JP2010073958
申请日：2010-03-28
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： ISHIYAMA KOICHI , NONAKA SOHEI
IPC分类号： C23C14/34 , B22F1/00 , B22F3/14 , B22F9/08 , C22C1/04 , C22C19/07 , G11B5/851
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a sputtering target for forming a film containing Co, Ta and a rare-earth metal, which can enhance the density of the target to such a level that the target is hardly cracked and can be machined.SOLUTION: This manufacturing method includes the steps of: preparing a mixture powder of an R-Co alloy powder which is an alloy powder of Co and R that is a rare-earth metal and a Ta powder so that the composition of the target comprises 5-10 atom% R, 5-10 atom% Ta and the balance Co with unavoidable impurities by a ratio; and hot-pressing the mixture powder in a vacuum or an inert-gas atmosphere.
摘要翻译：要解决的问题：提供一种制造用于形成含有Co，Ta和稀土金属的膜的溅射靶的方法，其可以将靶的密度提高到难以破裂的水平，并且可以是该制造方法包括以下步骤：制备作为稀土金属和Ta粉末的Co和R的合金粉末的R-Co合金粉末的混合粉末，使得靶材的组成包含5-10原子％R，5-10原子％的Ta和余量为Co的不可避免的杂质比例; 并在真空或惰性气体气氛中热压混合物粉末。

2. 发明专利

JP2008106335A Flat metal powdery mixture having low coercive force and high permeability and electromagnetic interference suppressor containing the flat metal powdery mixture 审中-公开
标题翻译：平面金属粉末混合物，具有低压力和高渗透性和电磁干扰抑制剂，包含平面金属粉末混合物
公开(公告)号：JP2008106335A
公开(公告)日：2008-05-08
申请号：JP2006292417
申请日：2006-10-27
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： UOZUMI SATOSHI , ISHIYAMA KOICHI , NAYUKI YASUSHI
IPC分类号： B22F1/00 , C22C19/03 , C22C45/02 , H01F1/147 , H01F1/20 , H01F1/44
摘要： PROBLEM TO BE SOLVED: To provide a flat metal powdery mixture having low coercive force and high permeability, and to provide an electromagnetic interference suppressor produced using the flat metal powdery mixture. SOLUTION: The flat metal powdery mixture having low coercive force and high permeability is obtained by mixing: flat metal soft magnetic powder A having a componential composition comprising, by atom, 60 to 90% Ni and 0.03 to 1.2% Mo, and the balance Fe with inevitable impurities, and having an average particle diameter of 30 to 150 μm and a flatness satisfying an aspect ratio of 5 to 500; and amorphous flat metal soft magnetic powder B having a componential composition comprising 4 to 21% Si, 4 to 21% B, ≤5% (excluding 0%) Cr, ≤5% (excluding 0%) C, ≤1% (excluding 0%) Mn and ≤0.1% (excluding 0%) S, and the balance Fe with inevitable impurities, and having an average particle diameter of 20 to 100 μm and a flatness satisfying an aspect ratio of 5 to 100. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有低矫顽磁力和高磁导率的扁平金属粉末混合物，并提供使用平金属粉末混合物制备的电磁干扰抑制剂。解决方案：通过混合具有低矫顽力和高渗透性的扁平金属粉末混合物，其具有包含60-90％Ni和0.03-1.2％Mo的组成组成的扁平金属软磁性粉末A，以及余量为Fe与不可避免的杂质，平均粒径为30〜150μm，平坦度为5〜500的纵横比。和含有4-21％Si，4-21％B，≤5％（不包括0％）Cr，≤5％（不包括0％）C，≤1％（不包括0％）的组成成分的非晶态平面金属软磁性粉末B 0％）Mn和≤0.1％（不含0％）S，余量为Fe与不可避免的杂质，平均粒径为20〜100μm，平坦度为5〜100倍。（C）2008，JPO＆INPIT

3. 发明专利

JP2015030870A Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法有权
标题翻译： Cu-Ga合金溅射靶及其生产方法
公开(公告)号：JP2015030870A
公开(公告)日：2015-02-16
申请号：JP2013160134
申请日：2013-08-01
申请人：三菱マテリアル株式会社 , Mitsubishi Materials Corp
发明人： YOSHIDA YUUKI , ISHIYAMA KOICHI , MORI AKIRA
IPC分类号： C23C14/34 , C22C1/04 , C22C1/05 , C22C9/00
CPC分类号： C23C14/3414 , B22F3/16 , B22F5/00 , B22F2201/01 , B22F2301/10 , B22F2302/45 , B22F2303/01 , B22F2303/15 , B22F2304/10 , C22C1/0425 , C22C9/00 , C22C32/00 , C23C14/14 , H01J37/3429
摘要：【課題】酸素含有量をさらに低減可能であると共に異常放電を抑制可能なCu−Ga焼成体のスパッタリングターゲット及びその製造方法を提供すること。【解決手段】本発明のスパッタリングターゲットは、Cu−Ga合金のγ相及びζ相を有する素地中に、Na化合物相が分散した組織を有し、20原子%以上30原子%未満のGaを含有し、Na:0.05〜10原子%を含有し、NaがNaF、Na2S、Na2Se、Na3AlF6のうち少なくとも1種の状態で含有され、残部がCu及び不可避不純物(Na化合物におけるNa以外の元素を含む)からなる成分組成を有し、X線回折によりCuGaのγ相に帰属する回折ピークとζ相に帰属する回折ピークとが観察される焼成体からなり、前記γ相の平均粒径が100μm以下であり、前記Na化合物相の平均粒径が、8.5μm以下である。【選択図】図1
摘要翻译：要解决的问题：提供一种能够进一步降低氧含量并能够抑制异常放电的Cu-Ga烧结体的溅射靶及其制造方法。本发明的溅射靶是包括具有：其中Na化合物相分散在具有Cu-Ga合金的γ相和ζ相的基体中的结构的烧制体; 含有20原子％以上且小于30原子％的Ga，0.05〜10原子％的Na，余量的Cu与不可避免的杂质（含有Na化合物中的Na以外的元素）组成的组成成分，含有Na化合物以NaF，NaS，NaSe或NaAlF中的至少一种的形式存在。在烧成体中，利用X射线衍射观察归因于CuGa的γ相的衍射峰和归属于ζ相的衍射峰。 γ相的平均粒径为100μm以下，Na化合物相的平均粒径为8.5μm以下。

4. 发明专利

JP2013033581A Sputtering target for magnetic recording medium film formation and method of manufacturing the same 有权
标题翻译：用于磁记录介质膜形成的溅射目标及其制造方法
公开(公告)号：JP2013033581A
公开(公告)日：2013-02-14
申请号：JP2012142833
申请日：2012-06-26
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： ISHIYAMA KOICHI
IPC分类号： G11B5/851 , C23C14/34 , G11B5/64 , G11B5/65
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target for magnetic recording medium film formation capable of suppressing generation of particles as well as forming a film with a low ordering temperature, and also provide a method of manufacturing the same.SOLUTION: A sputtering target for magnetic recording medium film formation comprises a sintered body having a composition represented by the general formula:{(FePt)In}C, where 30≤x≤80, 1≤y≤20 and 3≤z≤65 with atom ratios. A method of manufacturing the sputtering target includes a step of hot pressing of a mixed powder of an InPt alloy powder, a FePt alloy powder, a Pt powder, and a graphite powder or carbon black powder, in a vacuum or inert gas atmosphere.
摘要翻译：要解决的问题：提供能够抑制颗粒的产生以及形成具有低排序温度的膜的磁记录介质膜形成用溅射靶，并且还提供其制造方法。解决方案：用于磁记录介质膜形成的溅射靶包括具有由以下通式表示的组成的烧结体：ä（Fe x Pt 100-x ）（100-y）在 y } （100-z）C z ，其中原子比为30≤x≤80,1≤y≤20且3≤z≤65。制造溅射靶的方法包括在真空或惰性气体气氛中热压InPt合金粉末，FePt合金粉末，Pt粉末和石墨粉末或炭黑粉末的混合粉末的步骤。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012178210A Sputtering target for forming film of magnetic recording medium and method for manufacturing the same 有权
标题翻译：用于形成磁记录介质膜的溅射目标及其制造方法
公开(公告)号：JP2012178210A
公开(公告)日：2012-09-13
申请号：JP2012012628
申请日：2012-01-25
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： ISHIYAMA KOICHI , NONAKA SOHEI , JOHO MASANORI , MATSUZAKI HIDEHARU
IPC分类号： G11B5/851 , B22F3/00 , B22F3/14 , C04B35/00 , C22C1/04 , C22C5/04 , C22C33/02 , C22C38/00 , C23C14/34
CPC分类号： G11B5/851 , B22F2003/145 , C22C1/02 , C22C1/0466 , C22C5/04 , C22C32/0084 , C22C38/002 , C22C38/16 , C23C14/3414 , H01F41/183
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target for forming a film of a magnetic recording medium that allows deposition of a film with low ordering temperature while suppressing generation of particles, and a method for manufacturing the same.SOLUTION: A sputtering target for forming a film of a magnetic recording medium is composed of a sintered body having a composition expressed with a general formula: {(FePt)A}C, in which A represents a metal made of at least one of Au and Cu, and 30≤x≤80, 1≤y≤30 and 3≤z≤63 in atomic ratio are satisfied. Further, a method for manufacturing this sputtering target includes a step of hot-pressing, in vacuum or an inert gas atmosphere, mixed powder of: at least one of AuPt alloy powder and CuPt alloy powder; AgPt alloy powder; FePt alloy powder; Pt powder; and graphite powder or carbon black powder.
摘要翻译：要解决的问题：提供一种用于形成能够在抑制颗粒的产生的同时沉积低有序温度的膜的磁记录介质的膜的溅射靶及其制造方法。解决方案：用于形成磁记录介质的膜的溅射靶由具有以下通式表示的组成的烧结体组成：ä（Fe x Pt < SB POS =“POST”> 100-x ）（100-y） A y } C z 其中A表示由Au和Cu中的至少一种制成的金属，30≤x≤ 80，1≤y≤30，原子比3≤z≤63。此外，制造该溅射靶的方法包括在真空或惰性气体气氛中热压下列至少一种AuPt合金粉末和CuPt合金粉末的混合粉末的步骤; AgPt合金粉末; FePt合金粉末; 铂粉; 石墨粉或炭黑粉。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2012102387A Sputtering target for forming film of magnetic recording medium, and method for manufacturing the same 有权
标题翻译：用于形成磁记录介质膜的溅射目标及其制造方法
公开(公告)号：JP2012102387A
公开(公告)日：2012-05-31
申请号：JP2010254164
申请日：2010-11-12
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： ISHIYAMA KOICHI , NONAKA SOHEI , JOHO MASANORI
IPC分类号： C23C14/34 , B22F3/14 , C22C1/05 , C22C1/10 , C22C5/04 , C22C38/00 , G11B5/64 , G11B5/851
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target for forming a film of a magnetic recording medium capable of inhibiting abnormal discharge and stably obtaining a FePt-C film, by suppressing generation of particles during sputtering, and to provide a method for manufacturing the same.SOLUTION: The sputtering target for forming the film of the magnetic recording medium consists of a sintered compact having a structure in which C phases are dispersed in FePt alloy phase. The method for manufacturing the sputtering target includes a step of hot-pressing, in vacuum or an inert gas atmosphere, mixed powder of the FePt alloy powder, Pt powder, and carbon black powder formed by thermal decomposition of acetylene gas.
摘要翻译：要解决的问题：提供一种用于形成能够抑制异常放电并稳定地获得FePt-C膜的磁记录介质的膜的溅射靶，通过抑制溅射期间的颗粒的产生，并提供一种方法制造相同。解决方案：用于形成磁记录介质膜的溅射靶由具有C相分散在FePt合金相中的结构的烧结体构成。制造溅射靶的方法包括在真空或惰性气体气氛中热压由FePt合金粉末，Pt粉末和通过乙炔气体热分解形成的炭黑粉末的混合粉末的步骤。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2008088537A METHOD FOR PRODUCING SOFT MAGNETIC METAL POWDER COATED WITH Mg-CONTAINING OXIDE FILM HAVING LOW RETENTION FORCE AND METHOD FOR PRODUCING COMPOSITE SOFT MAGNETIC MATERIAL HAVING LOW RETENTION FORCE FROM THE POWDER 审中-公开
标题翻译：用于生产具有低保持力的含Mg氧化物膜的软磁性金属粉末的制造方法和用于生产具有来自粉末的低保持力的复合软磁材料的方法
公开(公告)号：JP2008088537A
公开(公告)日：2008-04-17
申请号：JP2006273665
申请日：2006-10-05
申请人： Mitsubishi Materials Corp , Mitsubishi Materials Pmg Corp , 三菱マテリアルPmg株式会社 , 三菱マテリアル株式会社
发明人： UOZUMI SATOSHI , WATANABE MUNEAKI , ISHIYAMA KOICHI
IPC分类号： B22F1/02 , B22F1/00 , B22F3/00 , H01F1/24 , H01F1/33 , H01F41/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for producing a soft magnetic metal powder coated with an Mg-containing oxide film having low coercive force.
SOLUTION: A strain imparted soft magnetic metal powder obtained by inserting and rotating the soft magnetic metal powder in a rotary mill is heated at temperatures of 400-1,200°C in an inert gas, reductive gas or vacuum atmosphere. Moreover, the soft magnetic metal powder is applied with a surface oxidation treatment in an oxidative atmosphere at temperatures of 50-500°C to produce a raw material powder. A mixed powder obtained by adding a Mg powder to the raw material powder is rolled while being heated in an inert gas or vacuum atmosphere of 1×10
-12 -1×10
-1 MPa and at temperatures of 150-1,100°C.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供涂覆有低矫顽力的含Mg氧化物膜的软磁性金属粉末的制造方法。解决方案：通过将软磁性金属粉末在旋转磨中插入和旋转获得的赋予软磁性金属粉末的应变在惰性气体，还原性气体或真空气氛中在400-1200℃的温度下加热。此外，软磁金属粉末在氧化性气氛中在50-500℃的温度下进行表面氧化处理，以生产原料粉末。将通过向原料粉末中添加Mg粉末而获得的混合粉末在惰性气体或1×10 -6 SP 10的真空气氛中加热的同时， SP> MPa，温度为150-1100℃。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2003331220A Measuring device and measuring method of rfid tag and manufacturing method of rfid tag by using device 有权
标题翻译： RFID标签的测量装置和测量方法及使用设备的RFID标签的制造方法
公开(公告)号：JP2003331220A
公开(公告)日：2003-11-21
申请号：JP2002136428
申请日：2002-05-13
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： UOZUMI SATOSHI , ISHIYAMA KOICHI , IIDA TERUYUKI
IPC分类号： G01R27/26 , G01S7/03 , G01S13/75 , G01S13/76 , G01S13/79 , G06K17/00 , G06K19/07 , G06K19/077 , H01Q1/38
摘要： PROBLEM TO BE SOLVED: To provide a measuring device and a measuring method of an RFID tag capable of measuring a resonance frequency or a Q value of the RFID tag even in a form wherein inlays are arranged in an array shape, and a manufacturing method of the RFID tag by using the device. SOLUTION: In this device 13 for measuring the resonance frequency or the Q value of the roll-shaped inlay wherein sheet coils 11 are arranged in an array shape on a roll-formed insulating film 10a, a non-magnetic metal plate 12 is installed so as to cover the periphery of the inlay which is a measuring object, and hereby mutual induction between each coil of the measuring object inlay and peripheral inlays is suppressed and the resonance frequency can be measured accurately. Since a trimming work can be performed without separating the inlay into sheets by using the device, productivity can be improved and the cost of the RFID tag can be lowered. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供一种能够测量RFID标签的共振频率或Q值的测量装置和测量方法，即使是嵌入式排列成阵列形状的形式，也可以是通过使用该装置制造RFID标签的方法。解决方案：在用于测量卷状嵌体的共振频率或Q值的装置13中，片状线圈11以阵列形状布置在辊状绝缘膜10a上，非磁性金属板12 安装成覆盖作为测量对象的嵌体的周边，因此抑制了测量对象嵌体的每个线圈和外围嵌入之间的互感，并且可以精确地测量谐振频率。由于可以通过使用该装置不进行将嵌入物分割成片材而进行修整工作，所以可以提高生产率，并降低RFID标签的成本。版权所有（C）2004，JPO

9. 发明专利

JP2014019934A Sputtering target and method for producing the same 有权
标题翻译：溅射目的及其制造方法
公开(公告)号：JP2014019934A
公开(公告)日：2014-02-03
申请号：JP2012162291
申请日：2012-07-23
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： IGARASHI KAZUNORI , WATANABE MUNEAKI , YOSHIDA YUUKI , ISHIYAMA KOICHI , MORI AKIRA
IPC分类号： C23C14/34 , C22C1/04 , C22C9/00
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target of Cu-Ga sintered body capable of further reducing an oxygen content and suppressing an abnormal discharge, and a method for producing the same.SOLUTION: The sputtering target comprises a sintered body, which has a component composition containing 20 at% to less than 30 at% of Ga, and a remainder of Cu and inevitable impurities, in which a diffraction peak attributed to a γ phase and a diffraction peak attributed to a ζ phase of CuGa are observed via an X-ray diffraction. A main peak intensity of the diffraction peak attributed to the ζ phase is more than 10% of a main peak intensity of the diffraction peak attributed to the γ phase, an oxygen content is 100 ppm or less, and a mean particle diameter is 100 μm or less.
摘要翻译：要解决的问题：提供能够进一步降低氧含量并抑制异常放电的Cu-Ga烧结体的溅射靶及其制造方法。解决方案：溅射靶包括烧结体，其具有含有20at％至小于30at％的Ga的组分组合物，剩余的Cu和不可避免的杂质，其中归因于γ相的衍射峰和归因于CuGa的ζ相的衍射峰通过X 射线衍射。归因于ζ相的衍射峰的主峰强度大于归因于γ相的衍射峰的主峰强度的10％以上，氧含量为100ppm以下，平均粒径为100μm 或更少。

10. 发明专利

JP2012252768A Sputtering target for magnetic recording medium film formation and manufacturing method thereof 有权
标题翻译：用于磁记录介质膜的溅射目标及其制造方法
公开(公告)号：JP2012252768A
公开(公告)日：2012-12-20
申请号：JP2012098541
申请日：2012-04-24
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： ISHIYAMA KOICHI
IPC分类号： G11B5/851 , B22F3/00 , B22F3/14 , C22C5/04 , C22C38/00 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a sputtering target for magnetic recording medium film formation allowing deposition of a film with a low ordering temperature and also suppression of particle-generation; and a manufacturing method thereof.SOLUTION: A sputtering target for magnetic recording medium film formation comprises a sintered body having a composition represented by the general formula: {(FePt)A}C, where A is a metal consisting of at least one of Sb and Sn, and 30≤x≤80, 1≤y≤20 and 3≤z≤65 as an atomic ratio. In addition, a manufacturing method of this sputtering target has a step in which a mixed powder of at least one of SbPt alloy powder and SnPt alloy powder, FePt alloy powder, Pt powder, and graphite powder or carbon black powder is hot-pressed in a vacuum or inert gas atmosphere.
摘要翻译：要解决的问题：提供用于磁记录介质膜形成的溅射靶，其允许沉积具有低有序温度的膜并抑制颗粒发生; 及其制造方法。解决方案：用于磁记录介质膜形成的溅射靶包括具有由以下通式表示的组成的烧结体：ä（Fe x Pt 100-x ）（100-y） y } （100-z）C z ，其中A是由Sb和Sn中的至少一种组成的金属，并且30≤x≤80,1≤y≤ 20和3≤z≤65作为原子比。此外，该溅射靶的制造方法具有以下步骤：将SbPt合金粉末和SnPt合金粉末，FePt合金粉末，Pt粉末和石墨粉末或炭黑粉末中的至少一种的混合粉末热压在真空或惰性气体气氛。版权所有（C）2013，JPO＆INPIT

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