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JP2011023720A Light detection element 有权
标题翻译：光检测元件
公开(公告)号：JP2011023720A
公开(公告)日：2011-02-03
申请号：JP2010158017
申请日：2010-07-12
申请人： Commissariat A L'energie Atomique Et Aux Energies Alternatives , コミサリアアエナジーアトミックエオックスエナジーズオルタネティヴ
发明人： BOUTAMI SALIM , ESPIAU DE LAMAESTRE ROCH , LE PERCHEC JEROME
IPC分类号： H01L31/10
CPC分类号： H01L31/1032 , H01L31/101
摘要： PROBLEM TO BE SOLVED: To provide a light detection element having an extremely thin semiconductor layer.
SOLUTION: The light detection element to detect light of which wavelength is close to λ
0 in vacuum includes a semiconductor layer (1) of which refractive index is ns and thickness is in an range from λ
0 /4ns to λ
0 /20ns, a first medium (3) which is positioned on one side of the semiconductor layer (1), has a first refractive index smaller than the refractive index ns, and transmits the light, a second medium (6) which is positioned on another side of the semiconductor layer (1), has a second refractive index ns smaller than ns, and has an area (5) of which width is approximately equal to λ
0 /ns, and a third medium (7) which is positioned on another side of the semiconductor layer (1) and on both sides of the area (5), has a third refractive index larger than the second refractive index, and forms a reflective interface with the second medium (6).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有极薄半导体层的光检测元件。解决方案：在真空中检测波长接近λ 0 的光的光检测元件包括折射率为ns的半导体层（1），并且厚度在λ的范围内位于半导体层（1）一侧的第一介质（3）的第一折射率小于折射率ns，并透射光，位于半导体层（1）的另一侧的第二介质（6）具有小于ns的第二折射率ns，并且具有宽度（5）的宽度大约等于λ 0 / ns，并且位于半导体层（1）的另一侧上并位于区域（5）两侧的第三介质（7）具有第三折射率大于第二折射率，并且与第二介质（6）形成反射界面。版权所有（C）2011，JPO＆INPIT

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