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1. 发明专利

JP4574211B2 A light source apparatus, an exposure apparatus having the light source device 有权
公开(公告)号：JP4574211B2
公开(公告)日：2010-11-04
申请号：JP2004123502
申请日：2004-04-19
申请人：キヤノン株式会社
发明人：隆行長谷川
IPC分类号： G01N23/20 , H05G2/00 , G03F7/20 , G21K5/00 , G21K5/02 , G21K5/08 , H01L21/027 , H05H1/24
CPC分类号： H05G2/003 , H05G2/008
摘要： A light source apparatus for irradiating a laser light onto a target, for generating plasma, and for producing light from the plasma, said light source apparatus includes a first detection part for detecting a position of the target, an adjusting part for adjusting a position of a condenser point of the laser light, and a first controller for controlling the adjusting part so that the position of the target detected by the first detection part is corresponding to the condenser point of the laser light.

2. 发明专利

JP4418665B2 Measuring device, as well as, exposure apparatus using the same 有权
公开(公告)号：JP4418665B2
公开(公告)日：2010-02-17
申请号：JP2003399487
申请日：2003-11-28
申请人：キヤノン株式会社
发明人：隆行長谷川
IPC分类号： G01M11/02 , H01L21/027 , G03F7/20
CPC分类号： G03F7/706

3. 发明专利

JP4522137B2 Adjustment method of the optical system 有权
公开(公告)号：JP4522137B2
公开(公告)日：2010-08-11
申请号：JP2004139062
申请日：2004-05-07
申请人：キヤノン株式会社
发明人：明三宅 , 隆行長谷川
IPC分类号： G01M11/02 , G02B7/00 , G02B7/198 , G03F7/20 , H01L21/027
CPC分类号： G03F7/706 , G03F7/70258

4. 发明专利

JP4262031B2 Manufacturing method for an exposure apparatus and a device 有权
公开(公告)号：JP4262031B2
公开(公告)日：2009-05-13
申请号：JP2003295566
申请日：2003-08-19
申请人：キヤノン株式会社
发明人：明三宅 , 隆行長谷川
IPC分类号： H01L21/027

5. 发明专利

JP3450624B2 X-ray exposure apparatus and an exposure system 失效
公开(公告)号：JP3450624B2
公开(公告)日：2003-09-29
申请号：JP2587597
申请日：1997-01-24
申请人：キヤノン株式会社
发明人：和之春見 , 隆行長谷川
IPC分类号： G21K5/02 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To reduce the consumption of an expensive He gas. SOLUTION: A hermetic chamber 1 contg. a wafer positioning stage S1, etc., is controlled to hold a low-pressure atmosphere of high-purity He gas. Exhaust from the chamber 1 is fed to a He liquefier 6 to liquefy and recover it, the obtd. liq. He is used in a cooler 7 for an optical source P1. The gasified He in the cooler 7 is stored in an He gas tank of an He gas feed system 5 and repeatedly used, thereby suppressing the consumption of the expensive He gas.

6. 发明专利

JP4235480B2 Differential pumping system and an exposure apparatus 有权
公开(公告)号：JP4235480B2
公开(公告)日：2009-03-11
申请号：JP2003107771
申请日：2003-04-11
申请人：キヤノン株式会社
发明人：明三宅 , 潤伊藤 , 信明大串 , 隆行長谷川
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70041 , G03F7/7055 , G03F7/70841 , G03F7/70916 , G21K1/043

7. 发明专利

JP3703447B2 Differential pumping system and an exposure apparatus 有权
公开(公告)号：JP3703447B2
公开(公告)日：2005-10-05
申请号：JP2002261796
申请日：2002-09-06
申请人：キヤノン株式会社
发明人：明三宅 , 信明大串 , 隆行長谷川
IPC分类号： G21K5/00 , F04D19/04 , F04D29/053 , G03F7/20 , G03F7/22 , G21K5/02 , H01L21/027 , F04D29/04
CPC分类号： G03F7/70841 , G03F7/70916

8. 发明专利

JP3526174B2 Semiconductor exposure apparatus and device manufacturing method 失效
公开(公告)号：JP3526174B2
公开(公告)日：2004-05-10
申请号：JP11187097
申请日：1997-04-14
申请人：キヤノン株式会社
发明人：裕田中 , 隆行長谷川
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To improve the precision of gap control and the precision of registration and transfer between a mask and a substrate, such as a wafer, by measuring in high precision the levels of the mask and the substrate in a device. SOLUTION: There is provided a semiconductor exposure device wherein light is exposed to while a mask membrane 2 of a mask 1 and a wafer 6 is brought close to each other at a very small distance. The device comprises a first processing unit 14 for calculating an approximate surface level of the mask membrane 2 from the results of the measurements obtained by means of an alignment scope 13 for measuring the level of the mask membrane 2, and a second processing unit 15 for calculating an approximate surface level of an exposure surface of the wafer 6 from the results of measurements obtained by a noncontact displacement meter 12 for measuring the level of the wafer 6. In accordance with the results of the operations of the processing units 14 and 15, a control unit 16 drives at least one of the stages of the mask 1 and the wafer 6 to control the distance between the mask 1 and the wafer 6 in high precision, while preventing the mask membrane 2 from being deformed, thus improving the transfer precision.

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