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1. 发明专利

JP2003202528A WAVEGUIDE OPTICAL SWITCH 审中-公开
公开(公告)号：JP2003202528A
公开(公告)日：2003-07-18
申请号：JP2002034654
申请日：2002-01-08
申请人： OPTOQUEST CO LTD , SAITO HIDETOSHI
发明人： SATO MAKOTO , WATABE AKIRA , OKUNO MASAFUMI , SAITO HIDETOSHI
IPC分类号： G02F1/01
摘要： PROBLEM TO BE SOLVED: To inexpensively provide a waveguide optical switch capable of controlling high-speed and large-capacity communications by low voltage drive. SOLUTION: A waveguide optical switch is created by using whisker electrodes utilizing ZnO whiskers, forming a flat buffer layer on the tip parts of whiskers, forming waveguides on the surface of the buffer layer by silk printing or the like, and arranging the other counter electrode. COPYRIGHT: (C)2003,JPO

2. 发明专利

JP2001114600A METAL OXIDE STRUCTURE AND METHOD FOR PRODUCING THE SAME 失效
公开(公告)号：JP2001114600A
公开(公告)日：2001-04-24
申请号：JP29250499
申请日：1999-10-14
申请人： ASAHI KASEI CORP , SAITO HIDETOSHI
发明人： SAITO HIDETOSHI , UEDA YOSHITOMO , KISHIMOTO YASUSHI
IPC分类号： C30B29/62 , C23C16/40
摘要： PROBLEM TO BE SOLVED: To provide a metal oxide structure comprising plural metal oxide fine crystals each having a specific size, especially the structure which can preferably be used as a light-releasing element, and to provide a method for producing the same. SOLUTION: This metal oxide structure comprises plural metal oxide fine crystals each having a cross section diameter (converted into a circle) of 0. 01 to 100 μm and epitaxially grown on a substrate. The method for producing the metal oxide structure comprises evaporating at least one metal compound which has an evaporating or subliming property and can react with at least one oxide-forming substance to form the metal oxide, and then reacting the obtained gas of the metal compound with the oxide-forming substance on a substrate placed in a reaction zone containing the oxide-forming substance.

3. 发明专利

JP2001064776A FORMATION OF INORGANIC THIN FILM AND DEVICE THEREFOR 失效
公开(公告)号：JP2001064776A
公开(公告)日：2001-03-13
申请号：JP23909699
申请日：1999-08-26
申请人： ASAHI CHEMICAL IND , SAITO HIDETOSHI
发明人： SAITO HIDETOSHI , IWABUCHI YOSHIMASA
IPC分类号： C23C16/40
摘要： PROBLEM TO BE SOLVED: To suppress the deposition of inorganic matters on the part other than the surface of a substrate and to improve the film forming efficiency by releasing the vaporized gas of a metallic compd. into an air atmosphere upwardly, spraying it on the surface of a heated substrate located in the upper direction of the releasing position and deposition at least the oxide of the metallic compd. thereon. SOLUTION: A film forming raw material 2 is a metallic compd. capable of forming a metallic oxide when the vaporized gas thereof the released into an air atmosphere. The vaporized gas of the film forming raw material 2 is released into the air atmosphere outside a vaporizer 1 upwardly from a nozzle 5 directly connected to the upper part of the vaporizer 1 and is sprayed on the surface of a heated substrate 7. At this time, the released vaporized gas comes into contact with the air atmosphere to produce reaction particles, which come into contact with the heated substrate 7, so that inorganic matters such as the oxides or the like of the metals contained in the film forming raw material 2 are deposited on the surface of the substrate 7 to form an inorganic thin film. The flow of the vaporized gas or the like is head to be disturbed by high temp. ascending currents generated around the nozzle 5 and the substrate 7.

4. 发明专利

JP2001019410A METAL OXIDE STRUCTURE HAVING PROJECTION IN SPECIFIED POSITION AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JP2001019410A
公开(公告)日：2001-01-23
申请号：JP18529999
申请日：1999-06-30
申请人： ASAHI CHEMICAL IND , SAITO HIDETOSHI
发明人： SAITO HIDETOSHI , UEDA YOSHITOMO , KISHIMOTO YASUSHI
IPC分类号： C01B13/14 , C01B33/12 , C01F7/02 , C01G9/02 , C01G19/02 , C01G21/02 , C01G23/047 , C01G25/02 , C23C16/40 , C30B29/62
摘要： PROBLEM TO BE SOLVED: To obtain a metal oxide structure having a large surface area per volume and an advantage, for example, of reduced stages in a secondary working, or the like, because the metal oxide structure has a projection in a specified position by utilizing a specified substrate and to provide a method for manufacturing the metal oxide structure. SOLUTION: This is a metal oxide structure having projections formed on a substrate having recessed and projection parts and a cross-sectional diameter of the projection expressed in terms of a diameter of a circle is 0.01-10,000 μm and the ratio of the length of the projection to the cross-sectional diameter expressed in terms of a diameter of a circle is 0.1 to greater. The density of the projections is preferably 0.01-10,000 projections per 10 μm×10 μm area on the metal oxide surface. One kind of, or many kinds of metal compounds having a volatility or sublimation property and reacting with compounds in the atmosphere to form oxides are evaporated, discharged and sprayed onto the substrate having the recessed and projection part set to a temperature higher than that of the metal compounds to manufacture the metal oxide structure.

5. 发明专利

JP2000277704A STRUCTURAL BODY HAVING FERROELECTRICTY 失效
公开(公告)号：JP2000277704A
公开(公告)日：2000-10-06
申请号：JP7675299
申请日：1999-03-19
申请人： ASAHI CHEMICAL IND , SAITO HIDETOSHI
发明人： SAITO HIDETOSHI , UEDA YOSHITOMO , KINOSHITA HIDEO
IPC分类号： H01G4/12 , C30B29/62 , H01G4/33 , H01L21/31 , H01L21/316 , H01L21/822 , H01L21/8247 , H01L27/04 , H01L27/10 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To obtain a feroelectric storage device in which storage capacity per unit area is large. SOLUTION: An insulating member 1, having special structure, is installed as an aggregate of insulating layer parts of a plurality of ferroelectric capacitors. The insulating member 1 consists of many pin-shaped bodies 42, composed of ferroelectric metal oxide and insulating material 6. Many pin- shaped bodies 42 are arranged in parallel, and the insulating material 6 is buried in the parts between the pin-shaped bodies. Each of the pin-shaped bodies 42 or a plurality of the pin-shaped bodies are made the insulating layer part of one ferroelectric capacitor.

6. 发明专利

JP2000247800A METAL OXIDE STRUCTURE HAVING PROJECTION 失效
公开(公告)号：JP2000247800A
公开(公告)日：2000-09-12
申请号：JP37305698
申请日：1998-12-28
申请人： ASAHI CHEMICAL IND , SAITO HIDETOSHI
发明人： SAITO HIDETOSHI , UEDA YOSHITOMO , KINOSHITA HIDEO
IPC分类号： C30B29/62 , C23C16/40 , H01B3/10 , H01B5/00
摘要： PROBLEM TO BE SOLVED: To provide a metal oxide structure that has a specific structure, for example, of a large surface area, by forming a plurality of projections of a specific shape on its surface. SOLUTION: This metal oxide structure has a plurality of projection parts that have a cross section of 0.01-10,000 μm in terms of diameter of a circle and the aspect ratio of the length to the diameter converted of the cross section of >=1 and individual projection parts have each two or more projection points. In a preferred embodiment, the projection parts distribute on the substrate at a density of 0.01-10,000 per the area of 10 μm×10 μm of the substrate. The structure can widen the area of a dielectric layer with a small capacity, and is particularly useful in electronic materials, for example, an insulator, a conductor, a solid electrolyte, a fluorescent display tube, an EL element, a ceramic condenser, an actuator, a laser oscillation element, a cold cathode element, ferroelectric memory, a piezoelectric material, a thermistor, a barrister, a superconductor, or the like, an electromagnetic wave-shielding material, a photodielectric material, an optical switch, an optical sensor, a solar cell, a light wavelength conversion element, or the like.

7. 发明专利

JP2000103700A STRUCTURE MADE OF METAL OXIDE 失效
公开(公告)号：JP2000103700A
公开(公告)日：2000-04-11
申请号：JP29007998
申请日：1998-09-29
申请人： ASAHI CHEMICAL IND , SAITO HIDETOSHI
发明人： SAITO HIDETOSHI , UEDA YOSHITOMO , NAKAZAWA KEIICHI , KINOSHITA HIDEO
IPC分类号： H01S3/06 , C30B29/62 , H01S3/16
摘要： PROBLEM TO BE SOLVED: To provide a structure usable as a light-emitting element, especially a laser oscillation element. SOLUTION: The objective structure is composed of a substrate made of a metal oxide having metal oxide protrusions having an equivalent circle diameter of the cross-section of 0.01-10,000 μm and a ratio of the length to the equivalent circle diameter of the cross-section of >=1 and an excitation source. Preferably, the number of protrusions on 10 μm×10 μm of the substrate is 0.01-10,000.

8. 发明专利

JP2000096236A METAL OXIDE STRUCTURE HAVING NETWORK STRUCTURE 失效
公开(公告)号：JP2000096236A
公开(公告)日：2000-04-04
申请号：JP28586498
申请日：1998-09-24
申请人： ASAHI CHEMICAL IND , SAITO HIDETOSHI
发明人： SAITO HIDETOSHI , UEDA YOSHITOMO , NAKAZAWA KEIICHI , KINOSHITA HIDEO
IPC分类号： C01G23/04 , B01J35/02 , C23C16/40
摘要： PROBLEM TO BE SOLVED: To obtain a latticed structure comprising plural combinations of flat platy bodies of a metal oxide having central faces parallel to each other and specified dimensions at a specified density and having a large surface area per unit volume by blowing a metal compound on a substrate of a metal oxide or the like to torm a metal oxide. SOLUTION: Two or more combinations of flat platy bodies having central faces parallel to each other are allowed to exist to obtain the objective metal oxide structure having a latticed structure. The flat platy bodies preferably have 0.005-10,000 μm width, 0.05-10,000 μm length, a height to width ratio of >=1 and >=0.1 μm weighted average height and preferably comprise metal oxide single crystals formed on a metal oxide substrate. The flat platy bodies are optionally fixed by filling the gaps with an organic or inorganic material, metal or the like. The metal oxide structure is formed by blowing a metal compound as gas or fine particles on a substrate kept at a prescribed temperature and allowing the compound to react with oxygen, water, ammonia or the like.

9. 发明专利

JPH11200069A PRODUCTION OF INORGANIC/POLYMER MATERIAL LAMINATE 失效
公开(公告)号：JPH11200069A
公开(公告)日：1999-07-27
申请号：JP1831298
申请日：1998-01-16
申请人： ASAHI CHEMICAL IND , SAITO HIDETOSHI
发明人： SAITO HIDETOSHI , KINOSHITA HIDEO , YOSHIMURA ISAO
IPC分类号： B32B9/00 , C23C26/00
摘要： PROBLEM TO BE SOLVED: To obtain a laminate essentially consisting of metallic oxide of speci fied thickness or below, high in productivity and excellent in practical perfor mance such as adhesion by volatilizing one or more kinds of metallic compds. having volatility and forming oxide after the release into an atmospheric ambi ence, release it into an atmospheric ambience by a gaseous medium and next spraying it on the surface of a high polymer material. SOLUTION: A metallic compd. having volatility and is instantaneously dissolved by oxygen, moisture or the like after the release into an atmospheric ambience to form oxide is used as the main raw material. One or more kinds of the metallic compds. are volatilized, are released into an atmospheric ambience under the ordinary pressure by a gaseous medium while being heated according to necessary and is next sprayed on the surface of a high polymer material. In this way, on the surface of the high polymer material, an inorganic thin film of one or more layers essentially consisting of metallic oxide of

10. 发明专利

JPH11110729A MAGNETIC HEAD AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JPH11110729A
公开(公告)日：1999-04-23
申请号：JP26833997
申请日：1997-10-01
申请人： ALPS ELECTRIC CO LTD , SAITO HIDETOSHI
发明人： OTSUKA TOMOO , IIZUKA MASAHIRO , SAITO HIDETOSHI
IPC分类号： G11B5/31 , G11B5/255 , G11B5/48 , G11B5/60 , G11B21/21
摘要： PROBLEM TO BE SOLVED: To adequately adjust film thickness of the α layer at the NiFe based alloy layer surface to form a carbon film in direct on the NiFe based alloy layer surface by cutting the thin film element surface through the polishing or etching or the like so that the thickness of the α layer of crystal structure at the surface of NiFe based alloy layer (core layer) forming a thin film element is limited only to the particular range. SOLUTION: An end surface 2 in the trailing side of a slider 1 is provided with a thin film element 3 covered with a protection layer 8. Surface of the thin film element 3 is cut by mechanical polishing or chemical polishing using a chemical or by plasma cleaning process such as ion etching or the like and thickness of the α layer forming a crystal structure at the core layer surface of the thin film element is limited to the range of 0.5 to 40 nm. When a carbon film 10 is formed in direct to the core layer surface, adequate dispersion occurs between the carbon film 10 and core layer, the carbon film 10 becomes difficult to peel, resulting in uniform film pressure and high surface smoothness. Thereby, spacing loss can be reduced.

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