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    • 2. 发明专利
    • Molded article of chemical heat storage material and method for producing the same
    • 化学热存储材料的成型品及其制造方法
    • JP2011162746A
    • 2011-08-25
    • JP2010030358
    • 2010-02-15
    • Air Water IncNagoya Electrical Educational Foundationエア・ウォーター株式会社学校法人 名古屋電気学園
    • WATANABE FUJIOKATANI MASANOBUSHIOMI NIROIZUMIDA NAOHIDE
    • C09K5/16F28D20/00
    • Y02E60/142
    • PROBLEM TO BE SOLVED: To provide a molded article of a chemical heat storage material with hardly reducing reactivity even when repeatedly used. SOLUTION: The molded article 17 of a chemical heat storage material in which particles 15 of the chemical heat storage material are carried in a porous body 14 formed by heating a resin is provided. The particles 15 of the chemical heat storage material preferably have a 0.1-1,000 μm average particle size and the content of the same is 30-85 wt.%. The porous body 14 is the resin and/or a carbide. The particles 15 of the chemical heat storage material are a compound of calcium or magnesium. The molded article 17 of the chemical heat storage material is produced by a method for producing the molded article 17 of the chemical heat storage material comprising a preparation step for preparing a mixed material by mixing the particles 15 of the chemical heat storage material with the resin and a heat processing step for forming the porous material 14 of the resin by heating the mixed material. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供即使在重复使用时几乎不降低反应性的化学蓄热材料的模制品。 解决方案:提供化学蓄热材料的成型体17,其中化学蓄热材料的颗粒15载于通过加热树脂形成的多孔体14中。 化学蓄热材料的颗粒15优选具有0.1-1,000μm的平均粒度,并且其含量为30-85重量%。 多孔体14是树脂和/或碳化物。 化学蓄热材料的颗粒15是钙或镁的化合物。 化学蓄热材料的成型品17由化学蓄热材料的成型体17的制造方法制造,该制造方法包括通过将化学蓄热材料的粒子15与树脂混合而制备混合材料的准备工序 以及通过加热混合材料来形成树脂的多孔材料14的热处理步骤。 版权所有(C)2011,JPO&INPIT
    • 3. 发明专利
    • Laser microphone
    • 激光麦克风
    • JP2009253241A
    • 2009-10-29
    • JP2008103147
    • 2008-04-11
    • Nagoya Electrical Educational Foundation学校法人 名古屋電気学園
    • YAMADA JUN
    • H01S5/14
    • PROBLEM TO BE SOLVED: To provide a laser microphone which uses a semiconductor laser, capable of detecting sound waves with high sensitivity, in a simple configuration.
      SOLUTION: The laser microphone 1 includes a semiconductor laser element 10 which emits laser beam, a reflecting plate 50 which is arranged from a semiconductor laser element 1 through an air which is a medium for sound waves to be propagated, to reflect laser beam emitted from the semiconductor laser element 10, and introduces a part of it into the semiconductor laser element 10, and a photodiode 30 which, as a light receiving means, receives the output light generated by self coupling effect between the laser beam in the semiconductor laser element 10 and the reflection light from the reflecting plate 50, and converts it to electric signals.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 解决的问题:以简单的结构提供能够以高灵敏度检测声波的半导体激光器的激光麦克风。 解决方案:激光麦克风1包括发射激光束的半导体激光元件10,反射板50,其通过作为要传播的声波的介质的空气从半导体激光元件1布置以反射激光 从半导体激光元件10发射的光束,并将其一部分引入到半导体激光元件10中,以及光电二极管30,其作为光接收装置接收由半导体激光元件10中的激光束之间的自耦合效应产生的输出光 激光元件10和来自反射板50的反射光,并将其转换为电信号。 版权所有(C)2010,JPO&INPIT
    • 5. 发明专利
    • Ultrasonic three-dimensional distance measuring device, and ultrasonic three-dimensional distance measuring method
    • 超声三维距离测量装置和超声三维距离测量方法
    • JP2009075086A
    • 2009-04-09
    • JP2008203012
    • 2008-08-06
    • Kansai Electric Power Co Inc:TheNagoya Electrical Educational Foundation学校法人 名古屋電気学園関西電力株式会社
    • FURUHASHI HIDEOSHIMIZU MASATOSHI
    • G01S15/32G01S7/521G01S7/524
    • PROBLEM TO BE SOLVED: To provide an ultrasonic three-dimensional distance measuring device capable of measuring a three-dimensional position and a three-dimensional shape of an object having reflected a transmitted ultrasonic wave even if the distance between centers of ultrasonic receiving elements is longer than the half wavelength of the transmitted ultrasonic wave, and an ultrasonic three-dimensional distance measuring method.
      SOLUTION: This ultrasonic three-dimensional distance measuring device measures the three-dimensional position and the three-dimensional shape of the object (target T) having reflected the ultrasonic wave W1 by performing electronic scanning in at least two directions. The measuring device comprises a modulating means 3 for AM-modulating an oscillation signal S1 by a pulse signal S2, an envelope detecting means 6 for envelope-detecting a received signal S4, and a delay multiplying means 8. Assuming that the pulse width of the pulse signal S2 is denoted as τ (s), the maximum value of the distances between centers of all ultrasonic wave receiving elements 5 along all directions for performing electronic scanning is L (m), and the speed of the ultrasonic wave W1 is v (m/s), a relation of τ
    • 要解决的问题:提供一种超声波三维距离测量装置,其能够测量反射发射超声波的物体的三维位置和三维形状,即使超声波接收中心之间的距离 元件长于发射超声波的半波长,超声波三维测距方法。 解决方案:该超声波三维距离测量装置通过在至少两个方向上执行电子扫描来测量反射超声波W1的物体(目标T)的三维位置和三维形状。 测量装置包括用于通过脉冲信号S2对振荡信号S1进行AM调制的调制装置3,用于包络检测接收信号S4的包络检测装置6和延迟倍增装置8.假定 脉冲信号S2表示为τ(s),所有超声波接收元件5的中心之间的距离沿着用于进行电子扫描的所有方向的最大值为L(m),超声波W1的速度为v( m / s),建立τ
    • 7. 发明专利
    • Semiconductor evaluation method
    • 半导体评估方法
    • JP2014116510A
    • 2014-06-26
    • JP2012270531
    • 2012-12-11
    • Nagoya Electrical Educational Foundation学校法人 名古屋電気学園
    • TOKUDA YUTAKAHONDA EUN-HEE
    • H01L21/66H01L21/329H01L29/47H01L29/872
    • PROBLEM TO BE SOLVED: To allow for continuous process evaluation at the same place on a wafer, in the semiconductor evaluation method using a Schottky diode.SOLUTION: A Schottky probe 1 includes a semiconductor layer 2, a Schottky electrode 3 formed on the upper surface of the semiconductor layer 2, and an ohmic electrode 4 formed on the lower surface of the semiconductor layer 2. The Schottky electrode 3 is formed in the shape of a square plate, and one or a plurality of Schottky electrodes 3 are arranged on the upper surface of the semiconductor layer 2. The Schottky electrode 3 is formed by coating the upper surface of the semiconductor layer 2 with a nano silver/silver mixed paste. The nano silver/silver mixed paste is produced by admixing nano silver to a silver paste. The ohmic electrode 4 is formed by coating the lower surface of the semiconductor layer 2 entirely with silver paste.
    • 要解决的问题:使用肖特基二极管的半导体评估方法允许在晶片上的相同位置进行连续工艺评估。解决方案:肖特基探测器1包括半导体层2,形成在上表面上的肖特基电极3 ,以及形成在半导体层2的下表面上的欧姆电极4.肖特基电极3形成为正方形板状,并且一个或多个肖特基电极3布置在上部 半导体层2的表面。肖特基电极3通过用纳米银/银混合糊涂覆半导体层2的上表面而形成。 纳米银/银混合浆料通过将纳米银与银浆料混合而制成。 欧姆电极4通过用银膏全部涂覆半导体层2的下表面而形成。
    • 10. 发明专利
    • Member joint structure, joint structure of wooden column and wooden beam, and connector
    • 木结构结构,木柱和木梁连接结构
    • JP2010185190A
    • 2010-08-26
    • JP2009028897
    • 2009-02-10
    • Horiuchi Kenchiku Kenkyusho:KkNagoya Electrical Educational Foundation学校法人 名古屋電気学園有限会社堀内建築研究所
    • OGATA MOTOOMI
    • E04B1/26E04B1/58
    • PROBLEM TO BE SOLVED: To effectively prevent the occurrence of loosening in a joint part of both of members to be joined due to shrinkage and deformation of the member to be joined on one side made of wood and accompanied with elapse of time. SOLUTION: In this member joint structure, a member 5 for joint having a screw part 5a on an outer peripheral face on at least a front end side is screw-fitted into the member 1 to be joined on one side made of wood, and the member 2 to be joined on the other side is fixed on a section on a rear end side more than a section to be screw-fitted in the member 1 to be joined on one side in the member 5 for joint by a fixing means 6 at such arrangement that the member 2 to be joined on the other side comes into face-contact with the member 1 to be joined on one side directly or indirectly. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了有效地防止由于由木材制成的一面上的接合构件的收缩和变形以及随着时间的流逝而在两个接合构件的接合部分中松动的发生。 解决方案:在该构件接合结构中,在至少前端侧的外周面上具有螺纹部分5a的接头构件5螺纹配合到待木材一侧接合的构件1中 并且另一侧的接合部件2通过固定而被固定在后端侧的部分上,而不是被紧固在待接合的部件5中的待连接部件1中的要被接合的部件的部分 装置6以这样的布置方式使得要在另一侧接合的构件2直接或间接地与要连接的构件1面接触。 版权所有(C)2010,JPO&INPIT