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1. 发明专利

JP2010199604A Heat treatment apparatus and heat treatment method 有权
标题翻译：热处理设备和热处理方法
公开(公告)号：JP2010199604A
公开(公告)日：2010-09-09
申请号：JP2010099816
申请日：2010-04-23
申请人： Kokusai Electric Semiconductor Service Inc , 株式会社国際電気セミコンダクターサービス
发明人： FUJII SATOSHI , ISHIZU HIDEO , ISHIHARA SHOJI
IPC分类号： H01L21/26 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To reduce contamination of a wafer to improve sealing performance of a heating container. SOLUTION: A heat treatment apparatus includes: a container of airtight structure; a substrate holding means which holds a substrate placed in the container; a lamp unit to heat the substrate through a top wall of the container; a cylindrical external rotor which is provided in outer circumference of the container and rotates around a vertical axis of the container; a cylindrical internal rotor which is fit in the container and rotates the substrate holding means in a coaxial manner with the external rotor; a magnetic coupling means which magnetically couples the external rotor with the internal rotor through the side wall of the container to rotate the internal rotor by the external rotor; and a gas bearing which feeds a gas to the internal rotor so as to float and support the internal rotor. The magnetic coupling means includes a magnet disposed in the external rotor and a magnetic body provided in the internal rotor, and the top side of the magnet disposed in the external rotor is held higher than the top side of the magnetic body provided in the internal rotor, when rotating the substrate holding means. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了减少晶片的污染以提高加热容器的密封性能。解决方案：热处理设备包括：气密结构的容器; 保持放置在容器内的基板的基板保持机构; 灯单元，用于通过所述容器的顶壁加热所述基板; 圆筒状外转子，其设置在容器的外周并围绕容器的纵轴旋转; 圆筒状的内部转子，其与所述外部转子同轴地嵌合在所述容器内，使所述基板保持机构旋转; 磁耦合装置，其通过容器的侧壁将外部转子与内部转子磁耦合，以通过外部转子旋转内部转子; 以及气体轴承，其将气体供给到内部转子，以便浮动并支撑内部转子。磁耦合装置包括设置在外转子中的磁体和设置在内转子中的磁体，并且设置在外转子中的磁体的上侧被保持为高于设置在内转子中的磁体的顶侧当旋转基板保持装置时。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2006147943A Substrate processor and semiconductor device manufacturing method 有权
标题翻译：基板处理器和半导体器件制造方法
公开(公告)号：JP2006147943A
公开(公告)日：2006-06-08
申请号：JP2004337837
申请日：2004-11-22
申请人： Kokusai Electric Semiconductor Service Inc , 株式会社国際電気セミコンダクターサービス
发明人： ISHIZU HIDEO , SUZUKI MASAYUKI
IPC分类号： H01L21/31 , C23C14/54 , C23C16/52 , H01L21/26
摘要： PROBLEM TO BE SOLVED: To obtain a stable temperature reproducibility even when the light entrance surface of a radiation thermometer dirties or deterioration etc. occurs due to secular change. SOLUTION: A control means 300 controls to heat the wafer 200 of a substrate under process in a chamber every lamp zone 101-104 corresponding to division-controlled lamp 111, based on the measured temperatures of substrate measuring optical fiber type radiation thermometers 401-404. A temperature monitoring wafer 51 is provided separately from the wafer 200 in the chamber. Its temperature is measured by both characteristic thermocouple thermometer 52 and a test substrate measuring optical fiber type radiation thermometer to obtain the temperature difference thereof by a difference correcting circuit 59. The temperature difference is applied to temperature control meters 601-604 constituting the control means 300 to correct the measured temperatures of the test substrate measuring optical fiber type radiation thermometers 401-404 deviated from the actual values. A corrected control signal is applied to a power feedback circuit 70 constituting the control means 300 to control the power of the lamp 111 in each lamp zone 101-104 according to a power set signal. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使当由于长期变化而发生辐射温度计的光入射表面出现污垢或劣化等时，也能获得稳定的温度再现性。解决方案：控制装置300基于测量的基板测量光纤型辐射温度计的温度，控制每个灯分区对应于分光控制灯111的每个灯区域101-104在室内加热正在处理的基板的晶片200 401-404。温度监视晶片51与腔室中的晶片200分开设置。其温度由特征热电偶温度计52和测试光纤型辐射温度计的测试基板测量，以通过差分校正电路59获得其温度差。将温差应用于构成控制装置300的温度控制仪601-604 校正测试基板的测量温度，测量光纤型辐射温度计401-404偏离实际值。校正的控制信号被施加到构成控制装置300的功率反馈电路70，以根据功率设定信号控制每个灯区域101-104中的灯111的功率。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2014060403A Substrate holder and wafer support method 审中-公开
标题翻译：基板支架和波形支撑方法
公开(公告)号：JP2014060403A
公开(公告)日：2014-04-03
申请号：JP2013197248
申请日：2013-09-24
申请人： Kokusai Electric Semiconductor Service Inc , 株式会社国際電気セミコンダクターサービス
发明人： ISHIZU HIDEO
IPC分类号： H01L21/31 , C23C16/458 , H01L21/205 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which uniformly processes all substrate surfaces when surface treatment is simultaneously performed on the multiple substrates, and to provide a substrate processing method.SOLUTION: A substrate holder 120 includes a top plate 124, a bottom plate 128, and multiple support pillars 125 and holds multiple substrates 112 in a lamination manner with spaces formed therebetween. The substrates are placed on the substrate holder where inclined grooves 129 are formed in the support pillars. A gas is supplied to the substrates placed on inclined surfaces from multiple gas introduction ports installed at an interval narrower than an interval between the inclined surfaces to perform treatment on surfaces of the substrates.
摘要翻译：要解决的问题：提供一种在多个基板上同时执行表面处理时均匀地处理所有基板表面的基板处理装置，并提供基板处理方法。基板保持件120包括顶板124，底板板128和多个支撑柱125并且以层压方式保持多个基板112，其间形成有间隙。基板被放置在基板保持器上，在支撑柱中形成有倾斜槽129。从设置在比倾斜面之间的间隔窄的间隔的多个气体导入口向被配置在倾斜面上的基板供给气体，对基板的表面进行处理。

4. 发明专利

JP2013118385A Supply power regulator, semiconductor manufacturing apparatus, and method for manufacturing semiconductor device 有权
标题翻译：供电电源调节器，半导体制造装置及制造半导体器件的方法
公开(公告)号：JP2013118385A
公开(公告)日：2013-06-13
申请号：JP2012265134
申请日：2012-12-04
申请人： Kokusai Electric Semiconductor Service Inc , 株式会社国際電気セミコンダクターサービス , Sanko:Kk , 株式会社三幸
发明人： ISHIZU HIDEO , SUZUKI MASAYUKI
IPC分类号： H01L21/22 , G05F1/45 , H01L21/324 , H02M5/293 , H05B3/00
CPC分类号： H02M5/293
摘要： PROBLEM TO BE SOLVED: To provide a supply power regulator and a semiconductor manufacturing apparatus which are compact, excellent in temperature response, excellent in stability with respect to power source variation and load variation, and excellent in usability.SOLUTION: The semiconductor manufacturing apparatus in which a substrate holder loaded with a plurality of substrates is carried into a reactor and the substrates are subjected to a heat treatment includes a heater 7 provided in the periphery of the reactor, and a supply power regulator 21 for regulating power to be supplied to the heater. The supply power regulator includes an IGBT converter 11 for power for converting an AC voltage of an AC power source 1 into an AC power corresponding to a frequency of a control signal, and supplying the converted AC power to the heater, and an IGBT converter for power regeneration for regenerating a counter electromotive force generated by a switching operation of the IGBT converter, and returning the regenerated power to the AC power source 1.
摘要翻译：解决的问题：提供一种紧凑型，温度响应性优异的电源调节器和半导体制造装置，在电源变化和负载变动方面的稳定性优异，可用性优异。解决方案：将其中装载有多个基板的基板保持器承载到反应器中并且对基板进行热处理的半导体制造装置包括设置在反应器的周边的加热器7和电源用于调节供应给加热器的电力的调节器21。电源调节器包括用于将AC电源1的AC电压转换为与控制信号的频率相对应的AC电力并将转换的AC电力提供给加热器的IGBT转换器11和用于用于再生由IGBT转换器的开关操作产生的反电动势并将再生电力返回到AC电源1的电力再生。（C）2013，JPO和INPIT

5. 发明专利

JP2010186904A Wafer processing apparatus 有权
标题翻译： WAFER加工设备
公开(公告)号：JP2010186904A
公开(公告)日：2010-08-26
申请号：JP2009030705
申请日：2009-02-13
申请人： Kokusai Electric Semiconductor Service Inc , 株式会社国際電気セミコンダクターサービス
发明人： ISHIZU HIDEO , SUZUKI MASAYUKI
IPC分类号： H01L21/205 , H01L21/22 , H01L21/31 , H01L21/324
CPC分类号： H01L21/67313 , C23C16/4409 , H01J37/32779 , H01L21/67126 , H01L21/67754
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of uniformly processing even a substrate having a relatively large diameter when the substrate is processed. SOLUTION: The substrate processing apparatus 101 includes: a substrate holder 217, configured to hold a plurality of substrates (wafers) 200, in a substantially vertical attitude in an array in a lateral direction (in a substantially horizontal direction); a processing tube (process tube) 205 for housing the substrate holder 217, a throat-side sealing section (throat-side mechanical flange section) 2190 for sealing an opening of the processing tube 205; and a rotating section 255, provided to the throat-side sealing section 2190 and rotating the substrate holder 217 in a peripheral direction of the substrates, based on the array direction of the plurality of the plurality of substrates 200 (a direction in which the substrates 200 are held). The substrate holder 217 has a fixing section (movable holding section 217c) and a fixed holding section 217a for fixing the substrates 200 in a substantially vertical attitude. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在基板被加工时甚至能够均匀地加工具有相对较大直径的基板的基板处理装置。基板处理装置101包括：基板保持部217，被配置为沿大致垂直的方向（大致水平方向）排列地保持多个基板（晶片）200; 用于容纳衬底保持器217的处理管（处理管）205，用于密封处理管205的开口的喉侧密封部（喉侧机械凸缘部）2190; 以及旋转部255，其设置在咽喉侧密封部2190上，并且基于多个基板200的排列方向（基板的方向）使基板保持部217沿基板的周向旋转 200人）。基板保持器217具有固定部（活动保持部217c）和固定保持部217a，用于将基板200以基本垂直的姿势固定。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2006339188A Heat treatment apparatus and heat treatment method 有权
标题翻译：热处理设备和热处理方法
公开(公告)号：JP2006339188A
公开(公告)日：2006-12-14
申请号：JP2005158471
申请日：2005-05-31
申请人： Kokusai Electric Semiconductor Service Inc , 株式会社国際電気セミコンダクターサービス
发明人： FUJII SATOSHI , ISHIZU HIDEO , ISHIHARA SHOJI
IPC分类号： H01L21/683 , H01L21/26
摘要： PROBLEM TO BE SOLVED: To improve sealing performance of a heating container with less contamination of a wafer. SOLUTION: A heat treatment apparatus is provided with a heating container 100 of a hermetically sealed structure consisting of a cylindrical side wall 110, an upper wall 120 and a bottom wall 130; a substrate holding means 500 for holding a wafer W to be housed in the heating container 100; and a lamp unit 200 for heating the wafer W while transmitting the upper wall 120 of the heating container 100. The apparatus is provided with a cylindrical external rotor 300 provided on the external periphery of the heating container 100 and rotating around a vertical axis of the heating container 100; a cylindrical internal rotor 400 provided on the internal periphery of the heating container 100 and allowing the substrate holding means 500 to rotate concentrically with the external rotor 300; a magnetic coupling means 600 for magnetically coupling the external and internal rotors 300 and 400 via the side wall 110 of the heating container 100, and transmitting the rotary movement of the external rotor 300 to the internal rotor 400 to rotate the substrate holding means 500; and a gas bearing 1000 for supplying a gas to the internal rotor 400, and utilizing the pressure of the gas to allow the internal rotor 400 to flow and be supported. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提高具有较少的晶片污染的加热容器的密封性能。解决方案：热处理设备设置有由圆柱形侧壁110，上壁120和底壁130组成的密封结构的加热容器100; 用于保持容纳在加热容器100中的晶片W的基板保持装置500; 以及用于在传送加热容器100的上壁120的同时加热晶片W的灯单元200.该设备设置有设置在加热容器100的外周上的圆筒形外转子300，加热容器100; 设置在加热容器100的内周上并允许基板保持装置500与外转子300同心旋转的圆柱形内转子400; 用于经由加热容器100的侧壁110磁耦合外部和内部转子300和400并将外部转子300的旋转运动传递到内部转子400以旋转基板保持装置500的磁耦合装置600; 以及用于向内转子400供给气体的气体轴承1000，利用气体的压力使内转子400流动并被支撑。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006237084A Thermal treatment apparatus and thermal treatment method 有权
标题翻译：热处理设备和热处理方法
公开(公告)号：JP2006237084A
公开(公告)日：2006-09-07
申请号：JP2005046160
申请日：2005-02-22
申请人： Kokusai Electric Semiconductor Service Inc , 株式会社国際電気セミコンダクターサービス
发明人： ISHIHARA SHOJI
IPC分类号： H01L21/26 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To improve sealing performance of a heating container without causing less contamination on a wafer. SOLUTION: This apparatus is provided with: a heating container 100 of a hermetical structure consisting of a cylindrical side wall 110, an upper wall 120 and a bottom wall 130; a susceptor 500 for holding a wafer W to be housed in the heating container 100; and a lamp unit 200 for heating the wafer W to be housed in the heating container 100 while allowing the heat to be transmitted through the upper wall 120 of the heating container 100. The apparatus is also provided with: a cylindrical external rotor 300 provided on the external periphery of the heating container 100 and rotating around the perpendicular shaft of the heating container 100; a cylindrical internal rotor 400 provided on the internal periphery of the heating container 100 and allowing the susceptor 500 to rotate concentrically with the external rotor 300; and a magnetically coupling means 600 magnetically coupling the external rotor 300 with the internal rotor 400 via the side wall 110 of the heating container 100 to transmit the rotation movement of the external rotor 300 to the internal rotor 400, thereby allowing the susceptor 500 to rotate. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提高加热容器的密封性能而不会对晶片造成较少的污染。解决方案：该装置设置有由圆柱形侧壁110，上壁120和底壁130组成的密封结构的加热容器100; 用于保持晶片W容纳在加热容器100中的基座500; 以及灯单元200，用于加热容纳在加热容器100中的晶片W，同时允许热量通过加热容器100的上壁120传输。该设备还设置有：圆柱形外部转子300，设置在加热容器100的外周并围绕加热容器100的垂直轴旋转; 设置在加热容器100的内周上并允许基座500与外转子300同心旋转的圆柱形内转子400; 以及磁耦合装置600，经由加热容器100的侧壁110将外部转子300与内部转子400磁耦合，以将外部转子300的旋转运动传递到内部转子400，从而允许基座500旋转。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2006165200A Resistance value detecting device of resistance heating heater in semiconductor manufacturing device and deterioration diagnosis device of resistance heating heater and network system in semiconductor manufacturing device 审中-公开
标题翻译：半导体制造装置中电阻加热器的电阻值检测装置和电阻加热器和网络系统在半导体制造装置中的检测诊断装置
公开(公告)号：JP2006165200A
公开(公告)日：2006-06-22
申请号：JP2004353295
申请日：2004-12-06
申请人： Kokusai Electric Semiconductor Service Inc , 株式会社国際電気セミコンダクターサービス
发明人： SUZUKI MASAYUKI , ISHIZU HIDEO
IPC分类号： H01L21/02 , C23C16/46 , H01L21/205 , H01L21/22
摘要： PROBLEM TO BE SOLVED: To detect a deterioration degree and time of disconnection of a resistance heating heater installed in a semiconductor manufacture device.
SOLUTION: A resistance value detecting device 1 is provided with a resistance value detecting means for detecting a resistance value when the temperature of the resistance heating heater 5 rises, and a transmission means 1f for transmitting the change of the resistance value detected by the resistance value detecting means through an outer data communication line as diagnosis reference data of the resistance heating heater 5 or medical examination data for medical examination. The deterioration diagnosis device 2 of the resistance heating heater 5 is installed in the semiconductor manufacturing device. The device 2 is provided with a reception means 2a for receiving data through the outer data communication line, and a storage means for storing diagnosis reference data of the resistance heating heater 5 received from a semiconductor manufacture device-side through the reception means 2a. Medical examination data of the resistance heating heater 5 received from the semiconductor production device-side through the reception means 2a are compared with diagnosis reference data of the storage means, and a deterioration state is judged by a size.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：检测安装在半导体制造装置中的电阻加热加热器的断开的劣化程度和断开时间。解决方案：电阻值检测装置1设有电阻值检测装置，用于在电阻加热器5的温度升高时检测电阻值;以及传输装置1f，用于传输由电阻加热器5检测的电阻值的变化，电阻值检测装置通过外部数据通信线路作为电阻加热器5的诊断参考数据或用于体检的医疗检查数据。电阻加热加热器5的劣化诊断装置2安装在半导体制造装置中。装置2设置有用于通过外部数据通信线路接收数据的接收装置2a和用于存储从半导体制造装置侧通过接收装置2a接收的电阻加热加热器5的诊断参考数据的存储装置。将从半导体制造装置侧通过接收装置2a接收的电阻加热加热器5的检查数据与存储装置的诊断参考数据进行比较，并且通过尺寸判断劣化状态。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2005268266A Heating lamp and semiconductor manufacturing equipment provided therewith 有权
标题翻译：加热灯和半导体制造设备
公开(公告)号：JP2005268266A
公开(公告)日：2005-09-29
申请号：JP2004074202
申请日：2004-03-16
申请人： Kokusai Electric Semiconductor Service Inc , 株式会社国際電気セミコンダクターサービス
发明人： ISHIZU HIDEO , SUZUKI MASAYUKI
IPC分类号： H05B3/00 , H01L21/26 , H05B3/44
摘要： PROBLEM TO BE SOLVED: To provide semiconductor manufacturing equipment which includes a heating lamp which is originally a line source of light but works as a surface light source by being so formed as to have a flat cross-sectional shape by forming a filament into an elliptical helical pattern or meandering pattern.
SOLUTION: The semiconductor manufacturing equipment has such a structure that a plurality of the heating lamps 1 as line sources of light, each having the filament 4 extended through a tube 8, are arranged in parallel with each other to form a lamp bank, a reflector 2 is located behind the lamp bank, and light is irradiated on a processed object 5 such as a substrate from the lamp bank to heat the processed object 5. Each of the heating lamps 1 consists of a linear light emitting object made by winding the filament 4 into an elliptical helical pattern or meandering pattern, and the tube 8 having a flat cross-sectional shape which seals the light emitting object by a sealing portion 11 which surrounds the light emitting object and is formed with electrodes on both sides.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体制造设备，其包括原本是线源光的加热灯，但是通过形成具有平坦的横截面形状的表面光源，通过形成长丝成为椭圆形螺旋图案或曲折图案。解决方案：半导体制造设备具有这样一种结构，即，将具有通过管8延伸的细丝4的作为线源的多个加热灯1彼此平行地布置以形成灯组反射器2位于灯组后面，并且光从灯组照射在诸如基板的被处理物体5上，以加热被处理物体5.每个加热灯1由线性发光物体构成，由将丝4缠绕成椭圆形螺旋图案或曲折图案，并且管8具有平坦的横截面形状，其通过围绕发光物体的密封部分11密封发光物体，并且在两侧形成有电极。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2006339187A Heat treatment apparatus and heat treatment method 有权
标题翻译：热处理设备和热处理方法
公开(公告)号：JP2006339187A
公开(公告)日：2006-12-14
申请号：JP2005158467
申请日：2005-05-31
申请人： Kokusai Electric Semiconductor Service Inc , 株式会社国際電気セミコンダクターサービス
发明人： FUJII SATOSHI , ISHIZU HIDEO , ISHIHARA SHOJI
IPC分类号： H01L21/26 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To enable maintain soaking property of a substrate by maintaining soaking property of a guard ring. SOLUTION: A heat treatment apparatus is provided with a heating container 10 for housing a wafer W; a lamp unit 30 provided outside the heating container 10 and heating the wafer W to be housed in the heating container 10; and a susceptor 22 provided in the heating container 10 and holding the wafer W to be housed in the heating container 10. The heat treatment apparatus is further provided with a ring-like guard ring 25 held in the susceptor 22 and supporting the peripheral edge of the wafer W; and a guard ring 26 held in the susceptor 22, configured of the same material as that of the guard ring 25 on the external periphery of the guard ring 25, and arranged like a ring closely to the guard ring 25. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过保持保护环的均热性能来保持基板的均热性能。解决方案：热处理设备设置有用于容纳晶片W的加热容器10; 设置在加热容器10的外侧并加热要容纳在加热容器10中的晶片W的灯单元30; 以及设置在加热容器10中并将晶片W保持在加热容器10中的基座22.热处理装置还设置有保持在基座22中的环状保护环25，晶片W; 保护环26保持在基座22上，由与保护环25的外周上的保护环25相同的材料构成，并且与防护环25紧密地配置成环状。版权所有：（C）2007，JPO＆INPIT

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