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JP2013098534A Multi-junction photodiode in application of molecular detection and discrimination and method for manufacturing the same 有权
标题翻译：应用分子检测和鉴定的多结点光电子体及其制造方法
公开(公告)号：JP2013098534A
公开(公告)日：2013-05-20
申请号：JP2012170866
申请日：2012-08-01
申请人： Ti-Shiue Biotech Inc , 體學生物科技股▲ふん▼有限公司Ti−Shiue Biotech, Inc.
发明人： TSAI CHIUN-LUNG , HUANG JUI-FENG , XU MIEN-FANG , CHEN ZHI YANG
IPC分类号： H01L27/146
CPC分类号： H01L31/111 , H01L27/14607 , H01L27/1461 , H01L27/1463 , H01L27/14647 , H01L27/14689 , H01L31/035281
摘要： PROBLEM TO BE SOLVED: To provide a multi-junction photodiode in application of molecular detection and discrimination, and a method for manufacturing the same.SOLUTION: A multi-junction photodiode provides a semiconductor device including a substrate having first conductive type dopants, an epitaxy layer having the first conductive type dopants, a deep well region having second conductive type dopants, a first well region having the first conductive type dopants, a second well region having the second conductive type dopants, a third well region having the first conductive type dopants, and a first dope region having the second conductive type dopants. The epitaxy layer is disposed on the substrate, and the deep well region is disposed in the epitaxy layer. The first well region having three sides connected to the epitaxy layer is disposed in the deep well region. The second well region is disposed in the first well region. The third well region having three sides connected to the epitaxy layer is disposed in the second well region. The first dope region is disposed in the third well region.
摘要翻译：要解决的问题：提供应用分子检测和鉴别的多结光电二极管及其制造方法。解决方案：多结光电二极管提供半导体器件，其包括具有第一导电类型掺杂剂的衬底，具有第一导电类型掺杂剂的外延层，具有第二导电类型掺杂剂的深阱区，具有第一导电类型掺杂剂的第一阱区，具有第二导电型掺杂剂的第二阱区，具有第一导电型掺杂剂的第三阱区，以及具有第二导电型掺杂剂的第一掺杂区。外延层设置在基板上，深孔区域设置在外延层中。具有连接到外延层的三边的第一阱区域设置在深阱区域中。第二阱区设置在第一阱区中。具有连接到外延层的三边的第三阱区域设置在第二阱区域中。第一涂料区域设置在第三阱区域中。版权所有（C）2013，JPO＆INPIT

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