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1. 发明专利

JPH11275645A Adjustment method for size of base station searching window 有权
标题翻译：基站搜索窗口大小的调整方法
公开(公告)号：JPH11275645A
公开(公告)日：1999-10-08
申请号：JP37002398
申请日：1998-12-25
申请人： Hyundai Electronics Ind Co Ltd , 現代電子産業株式会社
发明人： KO TECCHU , RI SOMIN
IPC分类号： H04B7/155 , H04B7/26 , H04W74/08 , H04W88/08 , H04Q7/36
CPC分类号： H04W74/0866 , H04W88/08
摘要： PROBLEM TO BE SOLVED: To provide an adjustment method for size of a base station searching window to change the position of the searching window and to control a service area by changing the parameter of a base station system and changing the searching window, according to the search range of the read preamble and the size of the searching window. SOLUTION: The service radius of a base station is decided for setting the size of a search window (ST1). The search range of the preamble corresponding to the service radius and the size of the searching window are read on a reference table, showing the size of a preamble searching window with respect to the service radius (ST2). The system parameter is changed, and the size of the searching window is adjusted so as to set the end point of the searching window in consideration of the transmission delay that changes in the air according to the service radius of the base station (ST3). With such a constitution, the unnecessary searching time is shortened at a place where the connection signal of a mobile station cannot reach. Thus, the acquisition efficiency is enhanced for the connection signal of the mobile station, and a service area can be controlled.
摘要翻译：要解决的问题：为了提供用于改变搜索窗口的位置的基站搜索窗口的大小的调整方法，并且通过改变基站系统的参数并改变搜索窗口来控制服务区域，根据读取前导码的搜索范围和搜索窗口的大小。解决方案：确定基站的服务半径设置搜索窗口的大小（ST1）。在参考表上读取与服务半径相对应的前导码的搜索范围和表示相对于服务半径的前导搜索窗口的大小（ST2）的参考表。改变系统参数，并且调整搜索窗口的大小，以便根据基站的服务半径考虑空中变化的传输延迟来设置搜索窗口的终点（ST3）。通过这样的结构，在移动台的连接信号不能到达的地方，不必要的搜索时间缩短。因此，移动台的连接信号的采集效率得到提高，并且可以控制服务区域。

2. 发明专利

JPH11275116A Traffic control method for providing predictive/ guaranteed service 有权
标题翻译：提供预测/保证服务的交通控制方法
公开(公告)号：JPH11275116A
公开(公告)日：1999-10-08
申请号：JP37158598
申请日：1998-12-25
申请人： Hyundai Electronics Ind Co Ltd , 現代電子産業株式会社
发明人： PARK JAE-HONG , RYO SHINGEN , GO SESO , KO UNKI , KAKU SHINKEI
IPC分类号： H04Q3/00 , H04L12/24 , H04L12/28 , H04L12/813 , H04L12/861 , H04Q11/04 , H04L12/56
CPC分类号： H04L47/22 , H04L47/10 , H04L47/20 , H04L47/2425 , H04L2012/5636 , H04L2012/5679 , H04Q11/0478
摘要： PROBLEM TO BE SOLVED: To provide a predictive/guaranteed service with a slight margin in QOS(quality of service) guarantee by controlling the transmission route of the respective kinds of traffic data through a policing function utilizing an MC (moving ceiling) technique and a packet scheduling function utilizing a FIFO (first-in first-out)/WFQ(weighted fair queueing).
SOLUTION: The average transmission rate of packet data inputted through respective routes is monitored 10 by utilizing the MC technique, whether or not the monitored result packet data satisfy the passing condition of the MC technique is judged and they are stored in the output buffer of a policing part in the case of satisfying the passing condition. In the case of not satisfying the passing condition, they are stored in the part when a free space is present in an optional storage place and abandoned when no free space is present. Thereafter, the output buffer of the respective routes is retrieved by the scheduler 20 of the FIFO/WFQ system, and the packet data are passed through one by one from the one inputted quickest, multiplied and then transmitted to a reception side.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：通过使用MC（移动天花板）技术的管理功能来控制各种业务数据的传输路由，提供QOS（服务质量）保证的略微保证的预测/保证服务使用FIFO（先进先出）/ WFQ（加权公平排队）的分组调度功能。解决方案：通过利用MC技术监视通过各路径输入的分组数据的平均传输速率，判断监视结果分组数据是否满足MC技术的通过条件，并将它们存储在在满足通过条件的情况下进行警务。在不满足通过条件的情况下，当空闲空间存在于可选存储位置时，它们被存储在部件中，并且当没有可用空间存在时被放弃。此后，各路由的输出缓冲器由FIFO / WFQ系统的调度器20检索，分组数据从最快输入的一个中逐个通过，然后被发送到接收端。

3. 发明专利

JP2958909B2 Sram cell and method of manufacturing the same 失效
公开(公告)号：JP2958909B2
公开(公告)日：1999-10-06
申请号：JP9462297
申请日：1997-03-28
申请人：現代電子産業株式会社
发明人： KIN SAIKO
IPC分类号： H01L21/336 , H01L21/8244 , H01L27/11 , H01L29/78 , H01L29/786
CPC分类号： H01L27/1104 , Y10S257/904
摘要： An SRAM cell and a method of manufacturing the same are disclosed. An SRAM cell including pull down devices, access devices and pull up devices each having source and drain regions with LDD structure, the source and drain regions of the access devices having: N+ source and drain regions; N- source and drain regions formed under the N+ source and drain regions; and P- impurity regions whose predetermined portion is overlapped with the N- source and drain region.

4. 发明专利

JPH11274290A Manufacture of semiconductor element 有权
标题翻译：半导体元件的制造
公开(公告)号：JPH11274290A
公开(公告)日：1999-10-08
申请号：JP37097298
申请日：1998-12-25
申请人： Hyundai Electronics Ind Co Ltd , 現代電子産業株式会社
发明人： RI SEION
IPC分类号： H01L21/76 , H01L21/306 , H01L21/762
CPC分类号： H01L21/30604 , H01L21/76256 , Y10S438/928 , Y10S438/967 , Y10S438/977
摘要： PROBLEM TO BE SOLVED: To prevent cup-shaped transformation which arises when polishing a silicon substrate, by etching the first silicon substrate polished primarily until the region doped with impurities is removed, and further, secondarily polishing the first silicon substrate to manufacture an SOI wafer.
SOLUTION: When joining the second silicon substrate 210 to the first silicon substrate 201, the top surface of the second silicon substrate 210 is joined to abut on the second insulating film 209 made on the first silicon substrate 201, and then it is heat-treated, and the rear of the first silicon substrate 201 is primarily polished by chemomechanical polishing process. This primary polishing is executed nearly to the section where impurities 203 are distributed. Furthermore, the rear of the first silicon substrate 201 is wetly etched until the region where impurities are distributed is removed by etchant, and then the secondary polishing process using an element isolating film 208a as polishing stop layer is performed, thus an SDI wafer possessing an element isolating film is manufactured.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：为了防止在研磨硅衬底时产生的杯形变形，通过蚀刻主要抛光的第一硅衬底去除掺杂有杂质的区域，并且另外抛光第一硅衬底以制造SOI晶片。解决方案：当将第二硅衬底210接合到第一硅衬底201时，第二硅衬底210的顶表面被接合以邻接在第一硅衬底201上制成的第二绝缘膜209上，然后被热处理并且通过化学机械抛光工艺主要抛光第一硅衬底201的后部。这种一次抛光几乎与杂质203分布的部分进行。此外，第一硅衬底201的后部被湿蚀刻，直到通过蚀刻剂去除杂质分布的区域，然后执行使用元件隔离膜208a作为抛光停止层的二次抛光工艺，因此具有制造元件隔离膜。

5. 发明专利

JP3020199B2 Sram cell and method of manufacturing the same 失效
公开(公告)号：JP3020199B2
公开(公告)日：2000-03-15
申请号：JP18736197
申请日：1997-06-26
申请人：現代電子産業株式会社
发明人：載甲金
IPC分类号： G11C11/412 , H01L21/8244 , H01L27/11
CPC分类号： H01L27/11 , G11C11/412 , H01L27/1104 , Y10S257/903

6. 发明专利

JP2000077678A Semiconductor element and its manufacture 有权
标题翻译：半导体元件及其制造
公开(公告)号：JP2000077678A
公开(公告)日：2000-03-14
申请号：JP24042899
申请日：1999-08-26
申请人： Hyundai Electronics Ind Co Ltd , 現代電子産業株式会社
发明人： KIN KYOKI , RI SHOUKU
IPC分类号： H01L21/31 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L27/1203 , H01L21/84
摘要： PROBLEM TO BE SOLVED: To reduce the threshold voltage of a semiconductor element and to improve the leak current characteristic and the degree of integration of the element, by forming first and second transistors on one active area in a laminated structure so that the transistors can share the use of one gate electrode.
SOLUTION: First and second transistors 100 and 200 are formed on one active area 11 in a laminated structure. The transistors 100 and 200 share the use of one gate electrode 14a. First metallic wiring 40 is formed in such a way that the gate electrode 14a shared by the transistors 100 and 200 is electrically connected to the drain area 28 of the second transistor 200. Second metallic wiring 42 is formed in such a way that the active area 11 is electrically connected to the source area 26 of the second transistor 200. Since the transistor 100 and 200 are formed on one active area 11 in such a way in a semiconductor element, the degree of integration of the element is improved remarkably. In addition, since the semiconductor element has a low threshold voltage and causes less leak currents, the element can be suitably used for portable electronic products.
COPYRIGHT: (C)2000,JPO
摘要翻译：要解决的问题：为了降低半导体元件的阈值电压并且通过在层压结构中的一个有源区上形成第一和第二晶体管，从而提高漏电流特性和元件的集成度，使得晶体管可以共享使用一个栅电极。解决方案：第一和第二晶体管100和200以叠层结构形成在一个有源区域11上。晶体管100和200共享一个栅电极14a的用途。第一金属布线40形成为使得由晶体管100和200共享的栅电极14a与第二晶体管200的漏区28电连接。第二金属布线42形成为使得有源区 11电连接到第二晶体管200的源极区26.由于晶体管100和200以这种方式形成在半导体元件中的一个有源区11上，所以元件的集成度显着提高。此外，由于半导体元件具有低阈值电压并且导致较小的漏电流，所以元件可以适用于便携式电子产品。

7. 发明专利

JPH11279122A Compound and its production, copolymer and its production, copolymer resin for photoresist and its production, photoresist composition and its production, and photoresist pattern formation and semiconductor element 有权
标题翻译：化合物及其生产，共聚物及其生产，用于光催化剂及其制备的共聚物树脂，光电组合物及其制备和光电子图案形成和半导体元件
公开(公告)号：JPH11279122A
公开(公告)日：1999-10-12
申请号：JP37466198
申请日：1998-12-28
申请人： Hyundai Electronics Ind Co Ltd , 現代電子産業株式会社
发明人： JUNG MIN HO , KOH CHA WON , KIM HYUNG GI
IPC分类号： H01L21/027 , C07C69/753 , C08F222/06 , C08F222/14 , C08F232/04 , C08L35/02 , G03F7/039
CPC分类号： C08F232/04 , C07C69/753 , C08F222/06
摘要： PROBLEM TO BE SOLVED: To obtain a new compound useful as a monomer for a copolymer resin, for photoresist, which is used for ultra-short wavelength light sources such as ArF, has high transparency at a specific wavelength, high etching resistance, a high protection coefficient in the copolymer resin, high adhesiveness with suppressing the top-loss phenomenon, and excellent resolution.
SOLUTION: This compound, shown by the formula (i.e., 2,3-di-tert-butyl-5- norbornene-2,3-dicarboxylate), is obtained by reacting cyclopentadiene with 1,4-di-tert-butyl furnate in a usual organic solvent (e.g. tetrahydrofuran), for example, at 20-80°C for 10 h or so, followed by removing the organic solvent, for example, by a rotary evaporator. A copolymer resin for photoresist having high transparency at 193 nm and an excellent resolution of 0.13 μm in a practical patterning experiment, can be obtained by copolymerizing the compound with maleic acid anhydride or the like.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题为了获得用作共聚树脂单体的新化合物，用于诸如ArF的超短波长光源的光致抗蚀剂，在特定波长下具有高透明度，高抗蚀刻性，高共聚树脂中的保护系数，抑制顶部损失现象的高粘合性和优异的分辨率。解决方案：该化合物由式（即2,3-二叔丁基-5-降冰片烯-2,3-二羧酸酯）表示，是通过环戊二烯与1,4-二叔丁基异丁酯的反应得到的通常的有机溶剂（例如四氢呋喃），例如在20-80℃下搅拌10小时左右，然后通过旋转蒸发器除去有机溶剂。通过使化合物与马来酸酐等共聚，可以获得在实际图案化实验中在193nm下具有高透明度和0.13μm优异分辨率的光致抗蚀剂共聚物树脂。

8. 发明专利

JP2959978B2 Field-effect transistor and a method of manufacturing the same 失效
公开(公告)号：JP2959978B2
公开(公告)日：1999-10-06
申请号：JP29015894
申请日：1994-11-24
申请人：現代電子産業株式会社
发明人： BAKU SANFUN
IPC分类号： H01L23/522 , H01L21/265 , H01L21/336 , H01L21/768 , H01L29/08 , H01L29/417 , H01L29/78
CPC分类号： H01L29/66606 , H01L29/0847 , H01L29/41775 , H01L2924/0002 , H01L2924/00
摘要： A transistor including an insulating film, a gate, and a source/drain all formed on a semiconductor substrate, wherein the gate overlaps at an edge thereof with the source/drain disposed below the gate, whereby the transistor has a structure capable of avoiding a direct contact between the metal wiring and the source/drain. The gate is formed after a formation of the source/drain.

9. 发明专利

JP3020198B2 Method of manufacturing a super-high-frequency semiconductor device 失效
公开(公告)号：JP3020198B2
公开(公告)日：2000-03-15
申请号：JP17894397
申请日：1997-06-19
申请人：現代電子産業株式会社
发明人：承務任 , 徳炯李 , 顯龍趙 , 松康金
IPC分类号： H01L29/812 , H01L21/285 , H01L21/338 , H01L29/423 , H01L29/772 , H01L29/778
CPC分类号： H01L29/66863 , H01L21/28581 , H01L21/28587 , H01L29/42316

10. 发明专利

JPH11274940A Reed-solomon decoding method using modified berlekamp-massey algorithm, and decoder thereof 审中-公开
标题翻译：使用改进的BERLEKAMP-MASSEY算法的REED-SOLOMON解码方法及其解码器
公开(公告)号：JPH11274940A
公开(公告)日：1999-10-08
申请号：JP453599
申请日：1999-01-11
申请人： Hyundai Electronics Ind Co Ltd , 現代電子産業株式会社
发明人： RI GENCHIN , GO DAIICHI
IPC分类号： H03M13/00
摘要： PROBLEM TO BE SOLVED: To provide a Reed-Solomon decoding method using a modified Berlekamp- Massey algorithm that is a compromise between the Berlekamp-Massey algorithm and a Euclidian algorithm and to provide its decoder.
SOLUTION: This Reed-Solomon decoder provided with a timing and control signal generating section 71, an error location polynomial calibration term register section 72, and error location register section 75, a syndrome register section 76, and a disagreement degree generating section 85 is provided with a divider that receives a disagreement degree output Δ
r of the error location polynomial calibration term register section 72, an estimate register section 74, and the disagreement degree generating section 85 and an error estimate term of the estimate register section 74 to calculate a new error estimate calibration term and to give it to the error location polynomial calibration term register section 72, a multiplier that receives the input of the disagreement degree output Δ
r from the disagreement degree generating section 85 and an input of a quotient from the error location polynomial calibration term register section 72 and multiplies them, and an adder that adds the output of the estimate register section 74 to the output of the multiplier and gives the sum to the estimated register section 74.
COPYRIGHT: (C)1999,JPO
摘要翻译：要解决的问题：提供使用Berlekamp-Massey算法的Reed-Solomon解码方法，该算法是Berlekamp-Massey算法和欧几里德算法之间的折中，并提供其解码器。解决方案：提供了具有定时和控制信号产生部分71，误差位置多项式校准项寄存器部分72和错误位置寄存器部分75，校正子寄存器部分76和不一致度生成部分85的Reed-Solomon解码器具有接收误差位置多项式校准项寄存器部分72的不一致度输出Δr的分频器，估计寄存器部分74和不一致度生成部分85以及估计寄存器部分74的误差估计项，以计算新的误差估计校准项并将其赋予误差位置多项式校准项寄存器部分72，乘法器接收来自不一致程度生成部分85的不一致度输出Δr的输入以及来自误差位置多项式校准项的商的输入寄存器部分72并将它们相乘，并且加法器将t的输出相加他将寄存器部分74估计为乘法器的输出，并将总和给予估计寄存器部分74。

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